D40NF10
Abstract: D40NF
Text: STD40NF10 N-channel 100V - 0.025Ω - 50A - DPAK STripFET II Power MOSFET PRELIMINARY DATA General features Type VDSS RDS on ID STD40NF10 100V < 0.028Ω 50A • 100% avalanche tested ■ Exceptional dv/dt capability 3 1 DPAK Description This Power MOSFET is the latest development of
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STD40NF10
STD40NF10
D40NF10
D40NF
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Mosfet
Abstract: SSF1016A
Text: SSF1016A 100V N-Channel MOSFET Main Product Characteristics VDSS 100V RDS on 13.8mohm(typ.) ID 75A ① D2PAK Marking and Pin Schematic Diagram Assignment Features and Benefits Advanced trench MOSFET process technology Special designed for PWM, load switching and
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SSF1016A
reliable00V
Mosfet
SSF1016A
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p40nf10
Abstract: STD40NF10 D40NF JESD97 STP40NF10 TF415
Text: STD40NF10 STP40NF10 N-channel 100V - 0.025Ω - 50A TO-220 / DPAK Low gate charge STripFET II Power MOSFET Features Type VDSS RDS on Max ID STD40NF10 100V <0.028Ω 50A STP40NF10 100V <0.028Ω 50A • Exceptional dv/dt capability ■ Low gate charge ■
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STD40NF10
STP40NF10
O-220
O-220
p40nf10
STD40NF10
D40NF
JESD97
STP40NF10
TF415
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irf150
Abstract: MOSFET IRF150 TA17421 TB334 circuits of IRF150 40A100V IRF-150
Text: IRF150 Data Sheet March 1999 40A, 100V, 0.055 Ohm, N-Channel Power MOSFET • 40A, 100V Formerly Developmental Type TA17421. Ordering Information PACKAGE 1824.3 Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed,
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IRF150
TA17421.
irf150
MOSFET IRF150
TA17421
TB334
circuits of IRF150
40A100V
IRF-150
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Untitled
Abstract: No abstract text available
Text: FRK160D, FRK160R, FRK160H 50A, 100V, 0.040 Ohm, Rad Hard, N-Channel Power MOSFETs December 2001 Features Package • 50A, 100V, RDS on = 0.040Ω TO-204AE • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current
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FRK160D,
FRK160R,
FRK160H
O-204AE
100KRAD
300KRAD
1000KRAD
3000KRAD
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70N10
Abstract: No abstract text available
Text: STD60N10 STP70N10 N-channel 100V - 0.016Ω - 60A TO-220 / DPAK Low RDS on Power MOSFET Preliminary Data Features • Type VDSS RDS(on)Max ID STD60N10 100V <0.0195Ω 60A STP70N10 100V <0.0195Ω 65A Exceptional dv/dt capability 3 3 1 ■ Extremely low on-resistance RDS(on)
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STD60N10
STP70N10
O-220
O-220
70N10
60N10
STP70N10
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2E12
Abstract: FRK160D FRK160H FRK160R Rad Hard in Fairchild for MOSFET
Text: FRK160D, FRK160R, FRK160H 50A, 100V, 0.040 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 50A, 100V, RDS on = 0.040Ω TO-204AE • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current
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FRK160D,
FRK160R,
FRK160H
O-204AE
100KRAD
300KRAD
1000KRAD
3000KRAD
2E12
FRK160D
FRK160H
FRK160R
Rad Hard in Fairchild for MOSFET
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2E12
Abstract: FRK160D FRK160H FRK160R
Text: FRK160D, FRK160R, FRK160H 50A, 100V, 0.040 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 50A, 100V, RDS on = 0.040Ω TO-204AE • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current
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FRK160D,
FRK160R,
FRK160H
O-204AE
100KRAD
300KRAD
1000KRAD
3000KRAD
2E12
FRK160D
FRK160H
FRK160R
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b50ne10
Abstract: B50NE1 STB50NE10T4 B50N JESD97 STB50NE10
Text: STB50NE10 N-channel 100V - 0.021Ω - 50A - D2PAK STripFET Power MOSFET General features Type VDSS RDS on ID STB50NE10 100V <0.027Ω 50A • Exceptional dv/dt capability ■ 100% avalanche tested ■ Low gate charge at 100 °C ■ Application oriented characterization
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STB50NE10
b50ne10
B50NE1
STB50NE10T4
B50N
JESD97
STB50NE10
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B50NE10
Abstract: STB50NE10T4 JESD97 STB50NE10 47S25
Text: STB50NE10 N-channel 100V - 0.021Ω - 50A - D2PAK STripFET Power MOSFET General features Type VDSS RDS on ID STB50NE10 100V <0.027Ω 50A • Exceptional dv/dt capability ■ 100% avalanche tested ■ Low gate charge at 100 °C ■ Application oriented characterization
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STB50NE10
B50NE10
STB50NE10T4
JESD97
STB50NE10
47S25
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p50ne1
Abstract: p50ne10 st mosfet st 50a st 393 JESD97 STP50NE10
Text: STP50NE10 N-channel 100V - 0.021Ω - 50A TO-220 STripFET Power MOSFET General features Type VDSS RDS on ID STP50NE10 100V <0.027Ω 50A • Exceptional high dv/dt capability ■ 100% avalanche tested ■ Low gate charge at 100 oC ■ Application oriented characterization
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STP50NE10
O-220
p50ne1
p50ne10
st mosfet
st 50a
st 393
JESD97
STP50NE10
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P40NF10
Abstract: JESD97 STP40NF10 p40nf
Text: STP40NF10 N-channel 100V - 0.025Ω - 50A TO-220 Low gate charge STripFET II Power MOSFET General features Type VDSS RDS on ID STP40NF10 100V <0.028Ω 50A • Exceptional dv/dt capability ■ Low gate charge at 100°C 3 ■ Application oriented characterization
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STP40NF10
O-220
P40NF10
JESD97
STP40NF10
p40nf
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p40nf10
Abstract: No abstract text available
Text: STP40NF10 N-channel 100V - 0.025Ω - 50A TO-220 Low gate charge STripFET II Power MOSFET General features Type VDSS RDS on ID STP40NF10 100V <0.028Ω 50A • Exceptional dv/dt capability ■ Low gate charge at 100°C 3 ■ Application oriented characterization
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STP40NF10
O-220
O-220
STP40NF10
p40nf10
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p50ne1
Abstract: P50NE10 p50ne STP50NE10
Text: STP50NE10 N-channel 100V - 0.021Ω - 50A TO-220 STripFET Power MOSFET General features Type VDSS RDS on ID STP50NE10 100V <0.027Ω 50A • Exceptional high dv/dt capability ■ 100% avalanche tested ■ Low gate charge at 100 oC ■ Application oriented characterization
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STP50NE10
O-220
O-220
STP50NE10
P50Nerein
p50ne1
P50NE10
p50ne
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B40NF10
Abstract: No abstract text available
Text: STB40NF10 N-channel 100V - 0.025Ω - 50A - D2PAK Low gate charge STripFET II Power MOSFET General features Type VDSS RDS on ID STB40NF10 100V <0.028Ω 50A • Exceptional dv/dt capability ■ Low gate charge at 100°C ■ 100% avalanche tested ■ Application oriented characterization
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STB40NF10
B40NF10
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B40NF10
Abstract: N-channel MOSFET to-247 50a B40nF JESD97 STB40NF10 STB40NF10T4 12NEW
Text: STB40NF10 N-channel 100V - 0.025Ω - 50A - D2PAK Low gate charge STripFET II Power MOSFET General features Type VDSS RDS on ID STB40NF10 100V <0.028Ω 50A • Exceptional dv/dt capability ■ Low gate charge at 100°C ■ 100% avalanche tested ■ Application oriented characterization
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STB40NF10
B40NF10
N-channel MOSFET to-247 50a
B40nF
JESD97
STB40NF10
STB40NF10T4
12NEW
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DIODE T25
Abstract: DIODE T25 4 E80276 FM200TU-2A
Text: MITSUBISHI <MOSFET MODULE> FM200TU-2A HIGH POWER SWITCHING USE INSULATED PACKAGE FM200TU-2A ● ID rms . 100A ● VDSS . 100V ● Insulated
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FM200TU-2A
E80276
E80271
30K/W
DIODE T25
DIODE T25 4
E80276
FM200TU-2A
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2N6896
Abstract: TB334
Text: 2N6896 Data Sheet December 2001 -6A, -100V, 0.600 Ohm, P-Channel Power MOSFET Features • -6A, -100V The 2N6896 is a P-Channel enhancement mode silicon gate power MOS field effect transistor designed for high-speed applications such as switching regulators, switching
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2N6896
-100V,
-100V
2N6896
O-204AA
TB334
TB334
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI <MOSFET MODULE> FM200TU-2A HIGH POWER SWITCHING USE INSULATED PACKAGE FM200TU-2A ● ID rms . 100A ● VDSS . 100V ● Insulated
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FM200TU-2A
E80276
E80271
30K/W
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"MOSFET Module"
Abstract: E80276 FM200TU-2A
Text: MITSUBISHI <MOSFET MODULE> FM200TU-2A HIGH POWER SWITCHING USE INSULATED PACKAGE FM200TU-2A ● ID rms . 100A ● VDSS . 100V ● Insulated
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FM200TU-2A
E80276
E80271
"MOSFET Module"
E80276
FM200TU-2A
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI <MOSFET MODULE> FM200TU-2A HIGH POWER SWITCHING USE INSULATED PACKAGE FM200TU-2A ● ID rms . 100A ● VDSS . 100V ● Insulated
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FM200TU-2A
E323585
March-2013
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F12n10
Abstract: No abstract text available
Text: RFP12N10L Data Sheet April 2005 Features 12A, 100V, 0.200 Ohm, Logic Level, N-Channel Power MOSFET • 12A, 100V These are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for use with logic level 5V driving sources in applications such as
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RFP12N10L
F12n10
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f12n10l
Abstract: f12n10 AN7254 AN7260 RFP12N10L TB334
Text: RFP12N10L Data Sheet April 2005 12A, 100V, 0.200 Ohm, Logic Level, N-Channel Power MOSFET Features • 12A, 100V These are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for use with logic level 5V driving sources in applications such as
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RFP12N10L
f12n10l
f12n10
AN7254
AN7260
RFP12N10L
TB334
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Untitled
Abstract: No abstract text available
Text: yw us FRK160D, FRK160R, FRK160H 50A, 100V, 0.040 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 50A, 100V, RDS on = 0.040£i TO-204AE • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)
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FRK160D,
FRK160R,
FRK160H
O-204AE
100KRAD
300KRAD
1000KRAD
3000KRAD
O-204AE
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