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    MOS CONTROLLED THYRISTOR SEMICONDUCTOR POWER Search Results

    MOS CONTROLLED THYRISTOR SEMICONDUCTOR POWER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    SSM6J808R Toshiba Electronic Devices & Storage Corporation MOSFET, P-ch, -40 V, -7 A, 0.035 Ohm@10V, TSOP6F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    SSM6K819R Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 100 V, 10 A, 0.0258 Ohm@10V, TSOP6F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    SSM6K809R Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 60 V, 6.0 A, 0.036 Ohm@10V, TSOP6F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    SSM6K504NU Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 30 V, 9.0 A, 0.0195 Ohm@10V, UDFN6B, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    SSM3K361R Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 100 V, 3.5 A, 0.069 Ohm@10V, SOT-23F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation

    MOS CONTROLLED THYRISTOR SEMICONDUCTOR POWER Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MCT thyristor

    Abstract: MOS-Controlled Thyristor half hour delay circuit 1400V MCT MOS-Controlled Thyristor N-type uf25c SMCT2TA65N14A10 100C 5A 200V SCR die s6 65a
    Text: 3 Northway Lane North SMCT2TA65N14A10 Latham, New York 12110 – 2204 SIZE 6 MCT SEMICONDUCTOR DISCHARGE SWITCH DESCRIPTION: This semiconductor discharge switch utilizes an n-type MOS-controlled thyristor, designed for the control of high power circuits with very small amounts of input energy. The MCT features high peak current capability


    Original     		PDF SMCT2TA65N14A10 15volts. MCT thyristor MOS-Controlled Thyristor half hour delay circuit 1400V MCT MOS-Controlled Thyristor N-type uf25c SMCT2TA65N14A10 100C 5A 200V SCR die s6 65a

    MCT thyristor

    Abstract: MOS-Controlled Thyristor mct thyristor datasheet MOS-Controlled Thyristor N-type SMCT2TA32N14A10 half hour delay circuit MOS Controlled Thyristor silicon controlled rectified 100C
    Text: 3 Northway Lane North Latham, New York 12110 – 2204 SMCT2TA32N14A10 SIZE 4 MCT SEMICONDUCTOR DISCHARGE SWITCH DESCRIPTION: This semiconductor discharge switch utilizes an n-type MOS-controlled thyristor, designed for the control of high power circuits with very small amounts of input energy. The MCT features high peak current capability


    Original     		PDF SMCT2TA32N14A10 150Deg MCT thyristor MOS-Controlled Thyristor mct thyristor datasheet MOS-Controlled Thyristor N-type SMCT2TA32N14A10 half hour delay circuit MOS Controlled Thyristor silicon controlled rectified 100C

    MCT thyristor

    Abstract: mct 600v MCT harris MOS Controlled Thyristor MCTV35P60F1D MCTV35P6
    Text: MCTV35P60F1D Semiconductor April 1999 AWN NS 35A, 600V ITHDR DESIG PART W E - NO NEW Thyristor MCT OLET S OBS S PROCE Features P-Type MOS Controlled with Anti-Parallel Diode Package • 35A, -600V JEDEC STYLE TO-247 • VTM = -1.35V (Max) at I = 35A and +150oC


    Original     		PDF MCTV35P60F1D -600V O-247 150oC factor/100) MCT thyristor mct 600v MCT harris MOS Controlled Thyristor MCTV35P60F1D MCTV35P6

    MCT thyristor

    Abstract: MCTV75P60E1 MOS Controlled Thyristor MCT harris "MOS Controlled Thyristors" mct thyristor datasheet MCTA75P60E1 MCTV75P6
    Text: Semiconductor IGNS WN DRA EW DES H T I TW ON PAR ETE - N L BSO SS O 75A, 600V P-Type MOS Controlled Thyristor MCT CE April 1999 PRO MCTV75P60E1, MCTA75P60E1 Features Package JEDEC STYLE TO-247 5-LEAD • 75A, -600V ANODE • VTM = -1.3V(Maximum) at I = 75A and +150oC


    Original     		PDF MCTV75P60E1, MCTA75P60E1 O-247 -600V 150oC MO-093AA O-218) MCT thyristor MCTV75P60E1 MOS Controlled Thyristor MCT harris "MOS Controlled Thyristors" mct thyristor datasheet MCTA75P60E1 MCTV75P6

    "MOS Controlled Thyristors"

    Abstract: MCT thyristor MOS Controlled Thyristor M65P100F1 MCTV65P100F1 MOS-Controlled Thyristor 1000V MCT MCTA65P100F1 2000A MOS MCTV65P1
    Text: Semiconductor S April 1999 CES PRO NS N RAW W DESIG D H T T WI O NE PAR ETE - N OL OBS MCTV65P100F1, MCTA65P100F1 65A, 1000V P-Type MOS Controlled Thyristor MCT Features Package JEDEC STYLE TO-247 • 65A, -1000V • VTM ≤ -1.4V at I = 65A and +150oC ANODE ANODE


    Original     		PDF MCTV65P100F1, MCTA65P100F1 O-247 -1000V 150oC MO-093AA O-218) "MOS Controlled Thyristors" MCT thyristor MOS Controlled Thyristor M65P100F1 MCTV65P100F1 MOS-Controlled Thyristor 1000V MCT MCTA65P100F1 2000A MOS MCTV65P1

    MOS Controlled Thyristor

    Abstract: MCT thyristor "MOS Controlled Thyristors" 100DV MCTG35P60F1 MCTG35P6
    Text: MCTG35P60F1 Semiconductor April 1999 WN IGNS ITHDRA W T R W DES A E P N O N EP-Type SOLET ESS OB PROC Features 35A, 600V MOS Controlled Thyristor MCT Package • 35A, -600V JEDEC STYLE TO-247 o • VTM = -1.3V(Maximum) at I = 35A and +150 C A • 800A Surge Current Capability


    Original     		PDF MCTG35P60F1 -600V O-247 150oC MOS Controlled Thyristor MCT thyristor "MOS Controlled Thyristors" 100DV MCTG35P60F1 MCTG35P6

    semikron thyristor

    Abstract: SCHEMATIC circuit scr H-Bridge "IGBT h-bridge" scr h-bridge IGBT ac switch circuit SK100KQ12 SK100KQ16 3 phase motor inverters circuit diagram igbt applications of mos controlled thyristor SKKT5616E
    Text: Semikron Thyristor, Diode and IGBT Modules SEMIKRON invented the SEMIPACK¨, the beginning of a new industry standard for isolated power semiconductor modules. The SEMIKRON power modules represent quality, continued innovation and engineering know-how that reduce


    Original     		PDF 25GB063 45GB063 30GB123 25GD063 45GD063 20GD123 15GH063 25GH063 45GH063 20GH123 semikron thyristor SCHEMATIC circuit scr H-Bridge "IGBT h-bridge" scr h-bridge IGBT ac switch circuit SK100KQ12 SK100KQ16 3 phase motor inverters circuit diagram igbt applications of mos controlled thyristor SKKT5616E

    MOS Controlled Thyristor

    Abstract: GTO thyristor 5A, 400V ED-26 diode Pelly AN75 AN-7504 MOS-Gated Transistors MOS-Gated Thyristor ED26 diode
    Text: The IGBTs - A New High Conductance MOS-Gated Device Application Note Abstract /Title AN75 4 Subect The GBTs A ew i h onucance OSated evice Autho ) Keyords Fairhild orpoation, emionuctor, Cretor () DOCI FO dfark Page- May 1992 AN-7504 ALUMINUM A new MOS gate-controlled power switch with a very low onresistance is described. The fabrication process is similar to


    Original     		PDF AN-7504 MOS Controlled Thyristor GTO thyristor 5A, 400V ED-26 diode Pelly AN75 AN-7504 MOS-Gated Transistors MOS-Gated Thyristor ED26 diode

    applications of mos controlled thyristor

    Abstract: MOS Controlled Thyristor Semiconductor Power AN-7504 mosfet controlled thyristor mos Turn-off Thyristor P channel 600v 20a IGBT ED26 diode Pelly 10A fast Gate Turn-off Thyristor transistor Ia 15 rca
    Text: The IGBTs - A New High Conductance MOS-Gated Device Application Note Abstract Title N86 bt he BTs w gh ncce OSted vice utho eyrds terrpoon, minctor, er OCI O frk geode May 1992 ALUMINUM A new MOS gate-controlled power switch with a very low onresistance is described. The fabrication process is similar to


    Original     		PDF

    ED26 diode

    Abstract: 8602 RECTIFIER AN8602 mos Turn-off Thyristor 8602 RECTIFIER 4 PIN P channel 600v 20a IGBT Pelly P channel 600v 30a IGBT applications of mos controlled thyristor INTERSIL 1981
    Text: The IGBTs - A New High Conductance MOS-Gated Device Application Note Abstract May 1992 ALUMINUM A new MOS gate-controlled power switch with a very low onresistance is described. The fabrication process is similar to that of an n-channel power MOSFET but employs an n-epitaxial layer grown on a p+ substrate. In operation, the


    Original     		PDF AN8602 ED26 diode 8602 RECTIFIER mos Turn-off Thyristor 8602 RECTIFIER 4 PIN P channel 600v 20a IGBT Pelly P channel 600v 30a IGBT applications of mos controlled thyristor INTERSIL 1981

    P-Channel IGBT

    Abstract: No abstract text available
    Text: Novel SiC MOS-Bipolar Switches for >10 kV Applications Ranbir Singh GeneSiC Semiconductor Inc. 25050 Riding Plaza, Suite 130-801, South Riding, VA 20152 571-265-7535 ph , 703-373-6918 (fax), [email protected] (email). MOS-based gate control is considered a necessity for the applicability of a switch to


    Original     		PDF

    ED26 diode

    Abstract: mos Turn-off Thyristor MOS Controlled Thyristor AN8602 ED-26 diode mosfet controlled thyristor MOS-Gated Thyristor ford igbt P channel 600v 20a IGBT MOTOROLA N CHANNEL POWER MOS FET TRANSISTORS
    Text: Harris Semiconductor No. AN8602.1 Harris Power MOSFETs May 1992 The IGBTs - A New High Conductance MOS-Gated Device Author: J.P. Russell, A.M. Goodman, L.A. Goodman and J.M. Neilson Abstract ALUMINUM A new MOS gate-controlled power switch with a very low onresistance is described. The fabrication process is similar to


    Original     		PDF AN8602 ED26 diode mos Turn-off Thyristor MOS Controlled Thyristor ED-26 diode mosfet controlled thyristor MOS-Gated Thyristor ford igbt P channel 600v 20a IGBT MOTOROLA N CHANNEL POWER MOS FET TRANSISTORS

    reverse-conducting thyristor

    Abstract: gto Gate Drive circuit IGCT thyristor IGCT mitsubishi Usha Rectifier Emitter Turn-Off thyristor eto thyristor GTO triac HEXFET Power MOSFET designer manual MOS-Controlled Thyristor
    Text: I Power Electronic Devices 1 Power Electronics Kaushik Rajashekara, Sohail Anwar, Vrej Barkhordarian, Alex Q. Huang Overview • Diodes • Schottky Diodes • Thyristors • Power Bipolar Junction Transistors • MOSFETs • General Power Semiconductor Switch Requirements • Gate


    Original     		PDF MCT00, reverse-conducting thyristor gto Gate Drive circuit IGCT thyristor IGCT mitsubishi Usha Rectifier Emitter Turn-Off thyristor eto thyristor GTO triac HEXFET Power MOSFET designer manual MOS-Controlled Thyristor

    static characteristics of mosfet and igbt

    Abstract: IGBT tail time 2A mosfet igbt driver stage mosfet, igbt, transistor Semiconductor Group igbt driver igbt SIEMENS SIEMENS thyristor main disadvantages of mosfet comparison of IGBT and MOSFET transistor igbt
    Text: Conductivity-Modulated FETs-IGBT Up to a reverse voltage of VDS ≤ 200 V, power MOSFETs are superior in all respects to any other switching devices components. With a supply voltage of VB > 200 V, the bipolar transistor has a lower saturation voltage VCE sat ≤ VDSon and is cheaper. In comparison with a


    Original     		PDF

    MOS Controlled Thyristor

    Abstract: germanium transistors NPN TL7726 Germanium Schottky diode germanium transistor pnp TLC1543 Application Note IN4001 IN4148 TL7726Q TLC1543
    Text: TL7726 Hex Clamping Circuit SLAA004 June 1994 IMPORTANT NOTICE Texas Instruments TI reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to obtain the latest version


    Original     		PDF TL7726 SLAA004 TL7726 MOS Controlled Thyristor germanium transistors NPN Germanium Schottky diode germanium transistor pnp TLC1543 Application Note IN4001 IN4148 TL7726Q TLC1543

    "CHAPTER 1 Introduction to Power Semiconductors"

    Abstract: schematic diagram on line UPS 10kva sith thyristor "static induction thyristor" "Power Semiconductor Applications" Philips Power Semiconductor Applications Philips Semiconductors ups schematic 10kva static induction Thyristor CHAPTER 1 Introduction to Power Semiconductors SIT Static Induction Transistor
    Text: Introduction Power Semiconductor Applications Philips Semiconductors CHAPTER 1 Introduction to Power Semiconductors 1.1 General 1.2 Power MOSFETS 1.3 High Voltage Bipolar Transistors 1 Introduction Power Semiconductor Applications Philips Semiconductors General


    Original     		PDF

    semikron semiconductor fuse

    Abstract: semikron semiconductor fuse data sheet 3 phase rectifier thyristor bridge Emitter Turn-Off thyristor Thyr
    Text: Letter Symbols and Terms using IEC (60 747-1 . 9 and IEV 50) a Maximum acceleration under vibration ICETRIP Max. ICE to trip ERROR (SKiiP) b Width of the module base ICM Peak collector current B2 Two-pulse bridge connection ICp Non-repetitive peak collector current


    Original     		PDF

    tl7726

    Abstract: tl7726q diode IN4001 diode IN4001 equivalent IN4001 diode IN4001 diode INFORMATION TLC1543 Application Note IN4001 IN4148 TLC1543
    Text: TL7726 Hex Clamping Circuit Application Report 1994 Printed in U.S.A. 0694–AL SLAA004 TL7726 Hex Clamping Circuit IMPORTANT NOTICE Texas Instruments TI reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to obtain the latest version


    Original     		PDF TL7726 SLAA004 tl7726 tl7726q diode IN4001 diode IN4001 equivalent IN4001 diode IN4001 diode INFORMATION TLC1543 Application Note IN4001 IN4148 TLC1543

    IN4001

    Abstract: IN4148 SLSS004 TL7726 TL7726Q TLC1543 tl7726c
    Text: TL7726 Hex Clamping Circuit SLSS004 June 1994 IMPORTANT NOTICE Texas Instruments TI reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to obtain the latest version


    Original     		PDF TL7726 SLSS004 IN4001 IN4148 SLSS004 TL7726 TL7726Q TLC1543 tl7726c

    thyristor control spot welding circuit

    Abstract: welding transformer SCR Electric Welding Machine thyristor 4-20ma thyristor controller IGBT ac switch in SSR dc 220v motor speed control circuit with scr star delta FORWARD REVERSE STARTER PWM AC 50HZ autotransformer starter 380V 120a motor
    Text: com.greegoo.www Greegoo Elextric Co.,Ltd. 2007 Intelligent Power Modules Introduction Intelligent Power Module Devices 1- AC switching device with phase-shift voltage regulating controller GETA series three phase AC switching device with phase-shift voltage regulating controller


    Original     		PDF 0-120A 000A/s, 125oC, 5x62x31 thyristor control spot welding circuit welding transformer SCR Electric Welding Machine thyristor 4-20ma thyristor controller IGBT ac switch in SSR dc 220v motor speed control circuit with scr star delta FORWARD REVERSE STARTER PWM AC 50HZ autotransformer starter 380V 120a motor

    stanag 3456

    Abstract: ac Inverter schematics 10 kw 30KW Inverter Diagram working principle of an inverter convertisseur dc ac 115v 400 hz 120 degree conduction mode of an inverter Pure sinewave inverter circuit diagram commutation techniques of scr principle block diagram 115v 400hz power single phase dual output inverter with three switch legs
    Text: APPLICATION NOTE APT9601 By: Serge Bontemps Phillipe Cussac Henry Foch Denis Grafham HIGH FREQUENCY RESONANT HALF BRIDGE MOS-Gated Power Semiconductors Configured in the ZVT Thyristor-Dual Mode Yield > 95% Converter Efficiency at 1-10 kW, When Resonantly Switched


    Original     		PDF APT9601 stanag 3456 ac Inverter schematics 10 kw 30KW Inverter Diagram working principle of an inverter convertisseur dc ac 115v 400 hz 120 degree conduction mode of an inverter Pure sinewave inverter circuit diagram commutation techniques of scr principle block diagram 115v 400hz power single phase dual output inverter with three switch legs

    MOS Controlled Thyristor

    Abstract: TA49226
    Text: HX A R R IS MCT3A65P100F2, MCT3D65P100F2 Semiconductor 'NnV' 0 lo<*6'N April 1999 65A, 1000V, P-Type MOS-Controlled Thyristor (MCT p *0 Description Features 65A, -1000V The MCT is an MOS Controlled Thyristor designed for switching currents on and off by negative and positive pulsed control of an


    OCR Scan     		PDF MCT3A65P100F2, MCT3D65P100F2 -1000V 000A/| MOS Controlled Thyristor TA49226

    Untitled

    Abstract: No abstract text available
    Text: MCTV65P100F1, MCTA65P100F1 H A R R IS X Semiconductor * # $ * » * * * * April 1999 65 A, 1000V P-Type MOS Controlled Thyristor MCT cess p *0 < Features Package JEDEC STYLE TO-247 • 65A,-1000V ANODE • VTM < -1.4V at I = 65A and +150°C CATHODE (FLANGE)


    OCR Scan     		PDF MCTV65P100F1, MCTA65P100F1 O-247 -1000V 000A/| MO-093AA O-218)

    Untitled

    Abstract: No abstract text available
    Text: MCTV75P60E1, i MCTA75P60E1 HARM S X Semiconductor 75A, 600V P-Type MOS Controlled Thyristor MCT p * 0 ' Cfcs S April 1999 Features Package JEDEC STYLE TO-247 5-LEAD • 75A ,-6 00V A NO DE • VTM = -1.3V(Maxim um ) at I = 75A and +150°C • 2000A Surge Current Capability


    OCR Scan     		PDF MCTV75P60E1, MCTA75P60E1 O-247 000A/| O-093AA O-218)