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    MOS 3020 Search Results

    MOS 3020 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPHR7404PU Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    MOS 3020 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: V30202C, VF30202C, VB30202C, VI30202C www.vishay.com Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A FEATURES TMBS TO-220AB • Trench MOS Schottky technology generation 2 ITO-220AB


    Original     		PDF V30202C, VF30202C, VB30202C, VI30202C O-220AB ITO-220AB J-STD-020, O-263AB V30202C VF30202C

    DIODE IR 2248

    Abstract: No abstract text available
    Text: New Product V30200C, VB30200C & VI30200C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.526 V at IF = 5 A FEATURES TO-220AB • Trench MOS Schottky technology • Low forward voltage drop, low power losses


    Original     		PDF V30200C, VB30200C VI30200C O-220AB J-STD-020C, O-263AB O-220AB O-262AA 2002/95/EC 2002/96/EC DIODE IR 2248

    Untitled

    Abstract: No abstract text available
    Text: New Product V30200C, VF30200C, VB30200C & VI30200C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.526 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology • Low forward voltage drop, low power


    Original     		PDF V30200C, VF30200C, VB30200C VI30200C J-STD-020, O-263AB ITO-220AB O-220AB V30200C 22-B106

    VF30200C

    Abstract: VF30200 J-STD-002 VB30200C vb30200
    Text: New Product V30200C, VF30200C, VB30200C & VI30200C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.526 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology • Low forward voltage drop, low power


    Original     		PDF V30200C, VF30200C, VB30200C VI30200C J-STD-020, O-263AB ITO-220AB O-220AB V30200C 22-B106 VF30200C VF30200 J-STD-002 VB30200C vb30200

    Untitled

    Abstract: No abstract text available
    Text: New Product V30200C, VF30200C, VB30200C & VI30200C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.526 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology • Low forward voltage drop, low power


    Original     		PDF V30200C, VF30200C, VB30200C VI30200C O-220AB ITO-220AB J-STD-020, O-263AB 22-B106 O-220AB,

    VF30200

    Abstract: J-STD-002 VB30200C
    Text: New Product V30200C, VF30200C, VB30200C & VI30200C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.526 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology • Low forward voltage drop, low power


    Original     		PDF V30200C, VF30200C, VB30200C VI30200C J-STD-020, O-263AB ITO-220AB O-220AB V30200C 22-B106 VF30200 J-STD-002 VB30200C

    89014

    Abstract: V30200C DIODE IR 2248 JESD22-B102 J-STD-002 VB30200C v30200c-e3
    Text: New Product V30200C, VB30200C & VI30200C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.526 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology TO-220AB • Low forward voltage drop, low power


    Original     		PDF V30200C, VB30200C VI30200C O-220AB J-STD-020, O-263AB V30200C O-220AB O-262AA O-263AB 89014 V30200C DIODE IR 2248 JESD22-B102 J-STD-002 VB30200C v30200c-e3

    V30200C

    Abstract: DIODE IR 2248
    Text: New Product V30200C, VB30200C & VI30200C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.526 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology TO-220AB • Low forward voltage drop, low power


    Original     		PDF V30200C, VB30200C VI30200C O-220AB V30200C J-STD-020, O-263AB O-220AB O-262AA V30200C DIODE IR 2248

    DIODE IR 2248

    Abstract: No abstract text available
    Text: New Product V30200C, VB30200C & VI30200C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.526 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology TO-220AB • Low forward voltage drop, low power


    Original     		PDF V30200C, VB30200C VI30200C O-220AB V30200C J-STD-020, O-263AB O-220AB O-262AA DIODE IR 2248

    Untitled

    Abstract: No abstract text available
    Text: V30200C, VF30200C, VB30200C, VI30200C www.vishay.com Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.526 V at IF = 5A FEATURES TMBS TO-220AB • Trench MOS Schottky technology ITO-220AB • Low forward voltage drop, low power losses


    Original     		PDF V30200C, VF30200C, VB30200C, VI30200C O-220AB ITO-220AB J-STD-020, O-263AB V30200C 22-B106

    Untitled

    Abstract: No abstract text available
    Text: V30200C, VF30200C, VB30200C, VI30200C www.vishay.com Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.526 V at IF = 5A FEATURES TMBS TO-220AB • Trench MOS Schottky technology ITO-220AB • Low forward voltage drop, low power losses


    Original     		PDF V30200C, VF30200C, VB30200C, VI30200C O-220AB ITO-220AB J-STD-020, O-263AB V30200C VF30200C

    Untitled

    Abstract: No abstract text available
    Text: V30200C, VF30200C, VB30200C, VI30200C www.vishay.com Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.526 V at IF = 5A FEATURES TMBS TO-220AB • Trench MOS Schottky technology ITO-220AB • Low forward voltage drop, low power losses


    Original     		PDF V30200C, VF30200C, VB30200C, VI30200C O-220AB ITO-220AB J-STD-020, O-263AB V30200C 22-B106

    uPD30200 VR4300

    Abstract: VR4300 UPD30200GD-100 bc 107 common base h parameters capacitor CTC1 U10504E VR4300TM VR4305 VR4310 UPD30210GD-167-MBB
    Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD30200, 30210 VR4300TM, VR4305TM, VR4310TM 64-BIT MICROPROCESSOR The µPD30200 VR4300 , 30200-133 (VR4305), and 30210 (VR4310)Note are high-performance, 64-bit RISC (Reduced Instruction Set Computer) type microprocessors employing the RISC architecture developed by MIPS.


    Original     		PDF PD30200, VR4300TM, VR4305TM, VR4310TM 64-BIT PD30200 VR4300) VR4305) VR4310 uPD30200 VR4300 VR4300 UPD30200GD-100 bc 107 common base h parameters capacitor CTC1 U10504E VR4300TM VR4305 UPD30210GD-167-MBB

    SPECfp92

    Abstract: NEC VR4310 uPD30200 uPD30210 U10504E VR4300 VR4300TM VR4305 VR4310 pd30200gd
    Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD30200, 30210 VR4300TM, VR4305TM, VR4310TM 64-BIT MICROPROCESSOR DESCRIPTION The µPD30200-100, 30200-133 VR4300 , 30200-80 (VR4305), and 30210 (VR4310) are high-performance, 64bit RISC (Reduced Instruction Set Computer) type VR SeriesTM microprocessors employing the RISC architecture


    Original     		PDF PD30200, VR4300TM, VR4305TM, VR4310TM 64-BIT PD30200-100, VR4300) VR4305) VR4310) 64bit SPECfp92 NEC VR4310 uPD30200 uPD30210 U10504E VR4300 VR4300TM VR4305 VR4310 pd30200gd

    VR4300

    Abstract: VR4305 VR4310 U10504E PD30210 NEC VR4300 VR4300TM UPD30210GD-167-MBB uPD30200 NEC 4300
    Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD30200, 30210 VR4300TM, VR4305TM, VR4310TM 64-BIT MICROPROCESSOR The µPD30200-100, 30200-133 VR4300 , 30200-80 (VR4305), and 30210 (VR4310) are high-performance, 64bit RISC (Reduced Instruction Set Computer) type VR SeriesTM microprocessors employing the RISC architecture


    Original     		PDF PD30200, VR4300TM, VR4305TM, VR4310TM 64-BIT PD30200-100, VR4300) VR4305) VR4310) 64bit VR4300 VR4305 VR4310 U10504E PD30210 NEC VR4300 VR4300TM UPD30210GD-167-MBB uPD30200 NEC 4300

    AP 4100 AA V1.3

    Abstract: S357 S85 452 s276 S217 S186 S87 452 s363 S227 S368
    Text: データ・シート MOS 集積回路 MOS Integrated Circuit µ PD161602A/B 360/396 出力 TFT-LCD 用ソース・ドライバ（64 階調） µ PD161602A/B は，64 階調表示対応の TFT-LCD 用ソース・ドライバで，ロジック：2.5 Ｖ，ドライバ：5.0 V の電


    Original     		PDF PD161602A/B PD161602A/B PD161602AP PD161602BP S15381JJ1V0DS00 132-bit D00-D05 D10-D15 D20-D25 AP 4100 AA V1.3 S357 S85 452 s276 S217 S186 S87 452 s363 S227 S368

    58550

    Abstract: 2N244 4525 GE N180N10 5585 Z G2 70-500 4R55 413500 SRG4 sdtn
    Text: データ・シート MOS 集積回路 MOS Integrated Circuit µ PD161401 RAM 内蔵 256 色カラー101 R, G, B x 80 ピクセル LCD コントローラ／ドライバ µPD161401 は，フルドットの LCD 表示が可能な RAM 内蔵ドライバで，RGB-STN カラーLCD に 256 色を表示


    Original     		PDF PD161401 PD161401 PD161401P/W S15726JJ2V0DS00 58550 2N244 4525 GE N180N10 5585 Z G2 70-500 4R55 413500 SRG4 sdtn

    ay-5-1012

    Abstract: ali m 3329 PROCESSOR ALI 3329 ali 3329 b ali 3329 SN74188 sn74s188 str 52100 SN7452 replacement of bel 187 transistor
    Text: GENERAL INFORMATION lie of Contents • Alphanumeric Index • Selection Guides • Glossary INTERCHANGEABiliTY GUIDE MOS MEMORIES TTL MEMORIES ECl MEMORIES MICROPROCESSOR SUMMARY 38510/MACH IV PROCUREMENT SPECIFICATION JAN Mll-M-38510 INTEGRATED CIRCUITS


    Original     		PDF 38510/MACH Mll-M-38510 Z501300 Z501200 Z501201 Z012510 ZOl1510 ay-5-1012 ali m 3329 PROCESSOR ALI 3329 ali 3329 b ali 3329 SN74188 sn74s188 str 52100 SN7452 replacement of bel 187 transistor

    uPD784038Y

    Abstract: No abstract text available
    Text: PRELIMINARY PRODUCT INFORMATION MOS INTEGRATED CIRCUIT mPD784054 16-BIT SINGLE-CHIP MICROCONTROLLER The mPD784054 is based on the mPD784046 subseries with the real- time output function and two units of timers/ counters deleted and a standby function invalid mode provided.


    Original     		PDF mPD784054 16-BIT mPD784054 mPD784046 10-bit mPD78F4046, uPD784038Y

    07FFFH

    Abstract: UPD74HC hp scanner uPD784038Y uPD784046 uPD78F4046 nec 78k flash memory write
    Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD784054 16-BIT SINGLE-CHIP MICROCONTROLLER DESCRIPTION The µPD784054 is based on the µPD784046 subseries with the real- time output function and two units of timers/ counters deleted and a standby function invalid mode provided.


    Original     		PDF PD784054 16-BIT PD784054 PD784046 10-bit PD78F4046, 07FFFH UPD74HC hp scanner uPD784038Y uPD784046 uPD78F4046 nec 78k flash memory write

    ic 3525

    Abstract: UPD17008 IC-3525 X256500 3360-H 4C40H
    Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD17068 4-BIT SINGLE-CHIP MICROCONTROLLER CONTAINING IMAGE DISPLAY CONTROLLER AND PLL FREQUENCY SYNTHESIZER FOR DIGITAL TUNING SYSTEMS The µPD17068 is a 4-bit single-chip microcontroller for digital tuning systems. It contains an image display


    Original     		PDF PD17068 PD17068 ic 3525 UPD17008 IC-3525 X256500 3360-H 4C40H

    MFE3020

    Abstract: MFE3021
    Text: MFE3020 silicon MFE3021 DUAL P-CHANNEL MOS FIELD-EFFECT TRANSISTORS DUAL P-CHANNEL MOS FIELD-EFFECT TRANSISTORS (Type C) Enhancement Mode (Type C| MOS Field-Effect Transistors de­ signed primarily for low power, chopper or switching applications. Low Reverse Gate Current —


    OCR Scan     		PDF MFE3020 MFE3021 MFE3021) MFE3020 MFE3021

    120-pin

    Abstract: 120-pin, microprocessor r4305 NEC r4305
    Text: DATA SHEET MOS INTEGRATED CIRCUIT UPD30200, 30210 V r4300 , V r4305™, V r4310™ 64-BIT MICROPROCESSOR The /XPD30200 V r4300 , 30200-133 (V r4305), and 30210 (VR4310)Note are high-performance, 64-bit RISC (Reduced Instruction Set Computer) type microprocessors employing the RISC architecture developed by MIPS.


    OCR Scan     		PDF UPD30200, uPD30210 r4300TM, r4305TM, r4310TM 64-BIT /XPD30200 r4300) r4305) VR4310 120-pin 120-pin, microprocessor r4305 NEC r4305

    mips r4000 pin diagram

    Abstract: No abstract text available
    Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT V r4300 , V r4305™, V r4310™ 64-BIT MICROPROCESSOR The ¿¡PD30200-100, 30200-133 V r4300 , 30200-80 (V r4305), and 30210 (V r4310) are high-perform ance, 64bit RISC (Reduced Instruction Set Com puter) type m icroprocessors em ploying the RISC architecture developed by


    OCR Scan     		PDF r4300â r4305â r4310â 64-BIT PD30200-100, r4300) r4305) r4310) 64bit r4300, mips r4000 pin diagram