MMFT6661T3 Search Results

MMFT6661T3 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
MMFT6661T3		On Semiconductor	Medium Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS SOT-223 for Surfac		Original	PDF

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Catalog Datasheet	MFG & Type	PDF	Document Tags
BC517 spice model Abstract: bc547 spice model bc548 spice model h1 m6c MPS6595 bc557 Spice Model BF245 A spice spice model bf199 BC640 SPICE model transistor motorola Selector Guide Plastic-Encapsulated Transistors GreenLineTM Portfolio Devices S Text: Selector Guide 1 Plastic-Encapsulated Transistors 2 GreenLine Portfolio Devices 3 Small-Signal Field-Effect Transistors and MOSFETs 4 Small-Signal Tuning and Switching Diodes 5 Tape and Reel Specifications and Packaging Specifications 6 Surface Mount Information	Original	PDF	VN2410L BC517 spice model bc547 spice model bc548 spice model h1 m6c MPS6595 bc557 Spice Model BF245 A spice spice model bf199 BC640 SPICE model transistor motorola Selector Guide Plastic-Encapsulated Transistors GreenLineTM Portfolio Devices S
t6661 Abstract: MMFT6661T1 MMFT6661T3 SMD310 Text: MOTOROLA Order this document by MMFT6661T1/D SEMICONDUCTOR TECHNICAL DATA MMFT6661T1 Medium Power Field Effect Transistor Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS SOT–223 for Surface Mount This TMOS medium power field effect transistor is designed for	Original	PDF	MMFT6661T1/D MMFT6661T1 t6661 MMFT6661T1 MMFT6661T3 SMD310
MMFT6661T1 Abstract: 72v6 BC237 2N3819 fet BC309B DL 3 Y SOT-223 msc2295 ucl 82 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMFT6661T1 Medium Power Field Effect Transistor Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS SOT–223 for Surface Mount This TMOS medium power field effect transistor is designed for high speed, low loss power switching applications such as	Original	PDF	Tap218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 MV1644 MMFT6661T1 72v6 BC237 2N3819 fet BC309B DL 3 Y SOT-223 msc2295 ucl 82
MMFT6661T1 Abstract: sot-223 body marking D K Q F Text: MOTOROLA Order this document by MMFT6661T1/D SEMICONDUCTOR TECHNICAL DATA MMFT6661T1 Medium Power Field Effect Hransistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate TMOS SOT-223 for Surface Mount MEDIUM POWER TMOS FET 500 mA 90 VOLTS	OCR Scan	PDF	MMFT6661T1/D OT-223 MMFT6661T1 MMFT6661T1 sot-223 body marking D K Q F
t6661 Abstract: No abstract text available Text: Order this data sheet by MMFT6661T1/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA Medium Power Field Effect TVansistor N-Channel Enhancem ent-Mode Silicon G ate TMOS SOT-223 for Surface Mount This TMOS medium power field effect transistor is designed for high speed, low loss power switching applications such as	OCR Scan	PDF	MMFT6661T1/D OT-223 MK145BP 2PHX33453F-1 t6661
t6661 Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Medium Pow er Field Effect Transistor MMFT6661T1 Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate TMOS SOT-223 for Surface Mount This TMOS medium power field effect transistor is designed for high speed, low loss power sw itching a pplications such as	OCR Scan	PDF	OT-223 t6661
t6661 Abstract: FT6661T1 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M M FT6661T1 Medium Pow er Field E ffect Transistor Motorola Preferred D«vice N-Channel Enhancement-Mode Silicon Gate TMOS SOT-223 for Surface Mount This TMOS medium power field effect transistor is designed for high speed, low loss power sw itching ap plication s such as	OCR Scan	PDF	OT-223 FT6661T1 FT6661T1 t6661