Untitled
Abstract: No abstract text available
Text: The State of RF/microwave Switch Devices Pat Hindle, Microwave Journal Editor RF and microwave switches are used extensively in wireless systems for signal routing finding wide use in switching signals from antennas to the transmit and receive chains. They are one of
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Abstract: No abstract text available
Text: SDA-6000 SDA-6000 GaAs Distributed Amplifier GaAs DISTRIBUTED AMPLIFIER Die: 2.21 mm x 1.21 mm x 0.102 mm Product Description Features RFMD’s SDA-6000 is a directly coupled DC GaAs microwave monolithic integrated circuit (MMIC) distributed driver amplifier die designed to support a wide array of high frequency commercial, military, and space applications. They are ideal for wideband amplifier gain blocks, modulators,
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SDA-6000
SDA-6000
SDA-6000SB
DS100223
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Untitled
Abstract: No abstract text available
Text: SDA-6000 SDA-6000 GaAs Distributed Amplifier GaAs DISTRIBUTED AMPLIFIER Die: 2.21 mm x 1.21 mm x 0.102 mm Product Description Features RFMD’s SDA-6000 is a directly coupled DC GaAs microwave monolithic integrated circuit (MMIC) distributed driver amplifier die designed to support a wide array of high frequency commercial, military, and space applications. They are ideal for wideband amplifier gain blocks, modulators,
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SDA-6000
SDA-6000
S6000
SDA-6000SB
DS100223
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Untitled
Abstract: No abstract text available
Text: SDA-2000 SDA-2000 GaAs Distributed Amplifier Package: Die, 3.1mm x 1.45mm x 0.102mm RFMD’s SDA-2000 is a directly coupled DC GaAs microwave monolithic integrated circuit (MMIC) distributed driver amplifier die designed to support a wide array of high frequency commercial, military, and space applications. They
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SDA-2000
102mm
SDA-2000
22GHz
410mA
DS140204
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Untitled
Abstract: No abstract text available
Text: SDA-6000 SDA-6000 GaAs Distributed Amplifier Package: Die, 2.21mm x 1.21mm x 0.102mm RFMD’s SDA-6000 is a directly coupled DC GaAs microwave monolithic integrated circuit (MMIC) distributed driver amplifier die designed to support a wide array of high
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SDA-6000
102mm
SDA-6000
50GHz
DS140210
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Untitled
Abstract: No abstract text available
Text: SDA-7000 SDA-7000 GaAs Distributed Amplifier Package: Die, 2.40mm x 1.21mm x 0.102mm RFMD’s SDA-7000 is a directly coupled DC GaAs microwave monolithic integrated circuit (MMIC) distributed driver amplifier die designed to support a wide array of high
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SDA-7000
102mm
SDA-7000
40GHz
200mA
DS140210
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siemens spc 2
Abstract: SIEMENS MICROWAVE RADIO SIEMENS MICROWAVE RADIO 8 GHz microwave transistor siemens MSC Microwave x-band mmic lna "Microwave Diodes" Microwave GaAs FET micro x MMIC Amplifier Micro-X marking D CFY67
Text: HiRel Discrete and HiRel Microwave Semiconductors 1. Preliminary Remarks This Paragraph gives an overview on the HiRel Small Signal Microwave Semiconductors available from Siemens. Full data sheets are also given in our HiRel Discrete and Microwave Semiconductors Data Book which is currently under generation August 1998 . They are
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de/semiconductor/products/35/35
de/semiconductor/products/35/353
MWP-25
MWP-35
siemens spc 2
SIEMENS MICROWAVE RADIO
SIEMENS MICROWAVE RADIO 8 GHz
microwave transistor siemens
MSC Microwave
x-band mmic lna
"Microwave Diodes"
Microwave GaAs FET micro x
MMIC Amplifier Micro-X marking D
CFY67
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Ferrite Circulators at 15 ghz
Abstract: medical ultra micro coaxial cable Aeroflex KDI Resistor military resistors catalog MIL-STD-1553 cable connector KDI attenuator SURFACE MOUNT DIODES MIL GRADE kdi mixer analog phase shifters chip gsm multicoupler
Text: ned by three tured above: mer-focused. hts reserved. me021r1_Aeroflex Micro. Bro.qxd 5/17/06 4:00 PM Page 1 RF & Microwave Devices Components RF Modules & Subsystems Capabilities Brochure Microelectronic Solutions – RFMW 2006 me021r1_Aeroflex Micro. Bro.qxd
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me021r1
Ferrite Circulators at 15 ghz
medical ultra micro coaxial cable
Aeroflex KDI Resistor
military resistors catalog
MIL-STD-1553 cable connector
KDI attenuator
SURFACE MOUNT DIODES MIL GRADE
kdi mixer
analog phase shifters chip
gsm multicoupler
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NE800296
Abstract: diode deg avalanche zo 150 63 NE72089 ne8002 SK3448 universal jfet biasing curve graph gunn diode ghz s-parameter NE800196 impatt diode NE800495-4
Text: California Eastern Laboratories AN82901-1 APPLICATION NOTE Application of Microwave GaAs FETs INTRODUCTION The history of converting microwave communications, as well as other communications technologies, to solid state electronics is a long one. Early advances were first made in
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AN82901-1
24-Hour
NE800296
diode deg avalanche zo 150 63
NE72089
ne8002
SK3448
universal jfet biasing curve graph
gunn diode ghz s-parameter
NE800196
impatt diode
NE800495-4
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NE800296
Abstract: NE800196 NE24406 diode deg avalanche zo 150 63 SK3448 ne8002 NE868199 shockley diode NE800495-4 shockley diode application
Text: California Eastern Laboratories AN82901-1 APPLICATION NOTE Application of Microwave GaAs FETs 9/82 INTRODUCTION The history of converting microwave communications, as well as other communications technologies, to solid state electronics is a long one. Early advances were first made in
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AN82901-1
NE800296
NE800196
NE24406
diode deg avalanche zo 150 63
SK3448
ne8002
NE868199
shockley diode
NE800495-4
shockley diode application
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HMC356LP3
Abstract: radar 77 ghz sige SC 2272 HMC373 HMC493LP3 2.5 ghz lna transistor HMC476MP86 HMC479MP86 HMC377QS16G HMC454ST89
Text: OFF-THE-SHELF AUTUMN 2003 NEW RF TO MILLIMETERWAVE IC PRODUCTS FROM HITTITE SiGe GAIN BLOCKS NOW OFFERED! INSIDE. High Linearity Low Cost “Micro-X” MMIC Amplifiers to 6 GHz * 20 NEW PRODUCTS RELEASED! Product Showcase Ultra Wideband Driver Amp HMC464
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HMC464
OC-48
OC-192
ISO9001-2000
HMC356LP3
radar 77 ghz sige
SC 2272
HMC373
HMC493LP3
2.5 ghz lna transistor
HMC476MP86
HMC479MP86
HMC377QS16G
HMC454ST89
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HMC440
Abstract: HMC440QS16G choke marking nb 03 HMC364G8 metal detector plans MMIC marking 81 HMC392 HMC395 body contact soi FET 2003 HMC397
Text: OFF-THE-SHELF SUMMER 2003 NEW RF TO MILLIMETERWAVE IC PRODUCTS FROM HITTITE INSIDE. MMIC VCO PRODUCT LINE EXPANDS ! * 24 NEW PRODUCTS RELEASED! Product Showcase Wideband Low Noise Amp HMC463 • 2 - 20 GHz • 14 dB Gain • 2.5 dB Noise Figure • Single +5V Supply
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HMC463
OC-48
OC-192
ISO9001-2000
HMC440
HMC440QS16G
choke marking nb 03
HMC364G8
metal detector plans
MMIC marking 81
HMC392
HMC395
body contact soi FET 2003
HMC397
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Untitled
Abstract: No abstract text available
Text: RFHA1101D Proposed 4.3W GaN ON SiC POWER AMPLIFIER DIE Package: Die Features Broadband Operation DC to 10GHz 1 Advanced GaN HEMT Technology Small Signal Gain=21.4dB at 2.14GHz 28V Typical Performance RF OUT VD RF IN VG • Output Power 4.3W at P3dB
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RFHA1101D
10GHz
14GHz
DS110630
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Untitled
Abstract: No abstract text available
Text: RFHA1101 4.3W GaN ON SiC POWER AMPLIFIER DIE-ON-CARRIER Package: Die Features Broadband Operation DC to 10GHz 1 Advanced GaN HEMT Technology Small Signal Gain=21.4dB at 2.14GHz 28V Typical Performance RF OUT VD RF IN VG • Output Power 4.3W at P3dB
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RFHA1101
10GHz
14GHz
DS110719
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Untitled
Abstract: No abstract text available
Text: RFHA1101D 4.3W GaN ON SiC POWER AMPLIFIER DIE Features Broadband Operation DC to 10GHz 1 Advanced GaN HEMT Technology Small Signal Gain=21.4dB at 2.14GHz 28V Typical Performance RF OUT VD RF IN VG • Output Power 4.3W at P3dB • Drain Efficiency 60% at P3dB
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RFHA1101D
10GHz
14GHz
DS110630
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Untitled
Abstract: No abstract text available
Text: RFHA1101 Proposed 4.3W GaN ON SiC POWER AMPLIFIER DIE-ON-CARRIER Package: Die Features Broadband Operation DC to 10GHz 1 Advanced GaN HEMT Technology Small Signal Gain=21.4dB at 2.14GHz 28V Typical Performance RF OUT VD RF IN VG • Output Power 4.3W at P3dB
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RFHA1101
10GHz
14GHz
DS110630
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RFHA
Abstract: RFHA1101
Text: RFHA1101 4.3W GaN ON SiC POWER AMPLIFIER DIE-ON-CARRIER Package: Die Features Broadband Operation DC to 10GHz 1 Advanced GaN HEMT Technology Small Signal Gain=21.4dB at 2.14GHz 28V Typical Performance RF OUT VD RF IN VG • Output Power 4.3W at P3dB
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RFHA1101
10GHz
14GHz
RFHA1101
DS110719
RFHA
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Untitled
Abstract: No abstract text available
Text: RFSA2113 rfmd.com Wide Bandwidth Voltage Controlled Attenuator Package Style: MCM, 16-Pin, 1.175mm x 3.2mm x3.2mm RFIN 3 GND VC VDD SLOPE 13 2 14 GND CONTROL BLOCK 12 GND 11 GND 10 RFOUT 9 GND ATTEN 7 8 GND GND GND 4 GND GND 6 Point to Point Radio Test Instrumentation
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RFSA2113
16-Pin,
175mm
50MHz
000MHz
45dBm
75dBm
29dBm
DS130502
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Untitled
Abstract: No abstract text available
Text: bbE d MICROÜIAVE TECHNOLOGY • biE m ao ooooebü a m hm riiiv MwT - 6 18 GHz High Power GaAs FET MicroWave Technology n p 4268 Solar Way Fremont, CA 94538 510-651-6700 F A X 510-651-2208 FEATURES n I— I r ■ n 100 IsoJ Is o i I— 130—1 is o l Is J
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Untitled
Abstract: No abstract text available
Text: FLR016XP, FLR016XV m ïm :il GaAs F E T and H E M T Chips fU J Ilb U FEATURES • High Output Power: P-|<jB = 20.0dBm Typ. • High Gain: G ^ b = 8.0dB(Typ.)(FLR016XP) G 1dB = 9.0dB(Typ.)(FLR016XV) • High PAE: = 25%(Typ.)(FLR016XP) il add = 26%(Typ.)(FLR016XV)
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FLR016XP,
FLR016XV
FLR016XP)
FLR016XV)
FLR016XV
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anzac switches
Abstract: anzac hybrid devices Adams-Russell
Text: THE SW-200 GaAs SPDT MMIC SWITCH, MIC APPLICATIONS AND PRODUCTS INTRODUCTION Adams-Russell Semiconductor Center has devel oped a GaAs monolithic microwave integrated cir cuit MMIC SPDT switch, the SW-200 and, in a joint effort with the Anzac Division, has implemented it
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SW-200
anzac switches
anzac hybrid devices
Adams-Russell
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101dg
Abstract: No abstract text available
Text: MwT -0208-101 DG MHZ 2-8 GHz MMIC AMPLIFIER MODULE MICRO WA VE TECHNOLOG Y 4268 Solar W ay Fremont, CA 94538 510-651-6700 FAX 510-651-2208 28 dB TYPICALSMALL SIG NALGAIN 1.5:1 TYPICAL INPUT AND OUTPUT VSWR 45 dB TYPICAL REVERSE ISOLATION i0.6 dB TYPICAL OUTPUT POWER FLATNESS
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MwT-0208-101DG-GFP
101dg
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m1305 transistor
Abstract: w431 MRF1421C Diode LT 4104 NJT1946A 7082a NJT1949 magnetron 2j42 MSF1422B magnetron 5kw
Text: INTEGRATED CIRCUITS BIPOLAR OPERATIONAL AMPLIFIER TY PE s I N G ¥ D U A L Q u A D H E X D E S C R IP T IO N NJMOP-07 NJM318 NJM741 NJM2107F NJM2130 NJM425# NJM5534 NJM 022 N JM 022B NJM 062 N JM 072B N JM 082B NJM353 NJM1458 NJM2041 NJM2043 NJM2068 NJM2082
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NJMOP-07
NJM318
NJM741
NJM2107F
NJM2130
NJM425#
NJM5534
NJM353
NJM1458
NJM2041
m1305 transistor
w431
MRF1421C
Diode LT 4104
NJT1946A
7082a
NJT1949
magnetron 2j42
MSF1422B
magnetron 5kw
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gaas fet micro-X Package marking
Abstract: INFINEON DIODE BAS 70 infineon radar BFY420 GaAs Amplifier Micro-X Marking N
Text: GaAs Components Infineon ?0í^nü!og¡«» HiRel Discretes and Microwave Semiconductors 11.1 Preliminary Remarks This Paragraph gives an overview on the HiRel Small Signal Microwave Semiconductors available from Infineon. Full data sheets are also given in our HiRel Discrete and
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