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SiTime Corporation SIT8208AIMGF-18E-25.000000E MEMS Crystal Oscillator 25MHz 1.8V 15pF 4-Pin SMD T/R - Tape and Reel (Alt: SIT8208AIMGF-18E-2)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SIT8208AIMGF-18E-25.000000E	Reel		12 Weeks	1,000	1 - 10 - 100 - 1000 $3.44861 10000 $3.44861	Buy Now
SiTime Corporation SIT8208AIMGF-18E-25.000000X MEMS Crystal Oscillator 25MHz 1.8V 15pF 4-Pin SMD T/R - Tape and Reel (Alt: SIT8208AIMGF-18E-2)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SIT8208AIMGF-18E-25.000000X	Reel		12 Weeks	250	1 - 10 - 100 - 1000 $3.44861 10000 $3.44861	Buy Now
SiTime Corporation SIT8208AIMGF-18E-25.000000D MEMS Crystal Oscillator 25MHz 1.8V 15pF 4-Pin SMD T/R - Tape and Reel (Alt: SIT8208AIMGF-18E-2)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SIT8208AIMGF-18E-25.000000D	Reel		12 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 $3.44861	Buy Now
SiTime Corporation SIT8208AIMGF-18E-25.000000S MEMS Crystal Oscillator 25MHz 1.8V 15pF 4-Pin SMD T/R - Tape and Reel (Alt: SIT8208AIMGF-18E-2)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SIT8208AIMGF-18E-25.000000S	Reel		12 Weeks	10,000	1 - 10 - 100 - 1000 - 10000 $3.44861	Buy Now
SiTime Corporation SIT8208AIMGF-18E-25.000000Y MEMS Crystal Oscillator 25MHz 1.8V 15pF 4-Pin SMD T/R - Tape and Reel (Alt: SIT8208AIMGF-18E-2)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SIT8208AIMGF-18E-25.000000Y	Reel		12 Weeks	1,000	1 - 10 - 100 - 1000 $3.44861 10000 $3.44861	Buy Now

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MGF1 Datasheets (82)

Part	Manufacturer	Description	Datasheet Type	PDF
MGF1001BT	Mitsubishi	Tape carrier microwave power GaAs fet	Scan	PDF
MGF1001 P	Mitsubishi	Dua Oscilltor MMIC	Scan	PDF
MGF1001P	Mitsubishi	Dua Oscilltor MMIC	Scan	PDF
MGF1100	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
MGF1100	Unknown	FET Data Book	Scan	PDF
MGF1102	Unknown	High Frequency Device Data Book (Japanese)	Scan	PDF
MGF1102	Unknown	FET Data Book	Scan	PDF
MGF1202	Unknown	High Frequency Device Data Book (Japanese)	Scan	PDF
MGF1202	Unknown	FET Data Book	Scan	PDF
MGF1302	Mitsubishi	LOW NOISE GaAs FET	Original	PDF
MGF1302	Mitsubishi	Low Noise GaAs FET	Scan	PDF
MGF1302	Unknown	High Frequency Device Data Book (Japanese)	Scan	PDF
MGF1302	Unknown	FET Data Book	Scan	PDF
MGF1303	Mitsubishi	LOW NOISE GaAs FET	Scan	PDF

MGF1303	Unknown	High Frequency Device Data Book (Japanese)	Scan	PDF
MGF1303	Unknown	FET Data Book	Scan	PDF
MGF1303B	Mitsubishi	LOW NOISE GaAs FET	Original	PDF
MGF1303B	Mitsubishi	Low Noise GaAs FET	Scan	PDF
MGF1303B	Mitsubishi	LOW NOISE GaAs FET	Scan	PDF
MGF1304A	Mitsubishi	for Microwave Low-Noise Amplifiers N-Channel Schottky Barrier Gate Type	Scan	PDF

MGF1 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
MGF1402B Abstract: MGF1402 Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1402B LOW NOISE GaAs FET MITSUBISHI ELECTRIC	Original	PDF	MGF1402B MGF1402B MGF1402
MGF1953A Abstract: No abstract text available Text: October /2003 MITSUBISHI SEMICONDUTOR <GaAs FET> MGF1953A Microwave Power MES FET Leadless Ceramic Package DESCRIPTION Outline Drawing The MGF1953A is designed for use in S to Ku band power amplifiers. The lead-less ceramic package assures minimum parasitic losses.	Original	PDF	MGF1953A MGF1953A 20dBm 12GHz 3000pcs
MGF1951A Abstract: No abstract text available Text: October/2003 MITSUBISHI SEMICONDUTOR <GaAs FET> MGF1951A Microwave Power MES FET Leadless Ceramic Package DESCRIPTION The MGF1951A is designed for use in S to Ku band power amplifiers. The lead-less ceramic package assures minimum parasitic losses. Outline Drawing	Original	PDF	October/2003 MGF1951A MGF1951A 13dBm 12GHz 3000pcs
MGF1951A Abstract: MGF1951A-01 MGF1951 Text: MITSUBISHI SEMICONDUTOR <GaAs FET> MGF1951 MGF1951A PRELIMINARY Medium Power Microwave MESFET DESCRIPTION The MGF1951A is a 20mW MESFET for S- to Ku-band driver amplifiers and oscillators. Its lead-less ceramic package assures minimum parasitics. FEATURES	Original	PDF	MGF1951 MGF1951A MGF1951A 13dBm 12GHz MGF1951A-01 MGF1951A-01 MGF1951
ID600A Abstract: No abstract text available Text: < Power GaAs FET > MGF1952A Leadless ceramic package DESCRIPTION The MGF1952A power MES FET is designed for use in S to Ku band power amplifiers. The lead-less ceramic package assures minimum parasitic losses. Outline Drawing FEATURES High gain and High P1dB	Original	PDF	MGF1952A MGF1952A 17dBm 12GHz 000pcs/reel ID600A
gaas fet marking J Abstract: No abstract text available Text: < Power GaAs FET > MGF1941AL Micro-X type plastic package DESCRIPTION The MGF1941AL power MES FET is designed for use in S to Ku band power amplifiers. Outline Drawing FEATURES High gain and High P1dB P1dB=15dBm, Glp=10 dB Typ. @ f=12GHz APPLICATION Fig.1	Original	PDF	MGF1941AL MGF1941AL 15dBm, 12GHz 000pcs/reel gaas fet marking J
Untitled Abstract: No abstract text available Text: MGF1102 Transistors N-Channel Dual-Gate UHF/Microwave MESFET V BR DSS (V) V(BR)GSS (V)-6.0 I(D) Max. (A)80m P(D) Max. (W)300m Maximum Operating Temp (øC)150 I(DSS) Min. (A)15m I(DSS) Max. (A)80m @V(DS) (V) (Test Condition)3.0 @Temp (øC) (Test Condition)25	Original	PDF	MGF1102
MGF1404 Abstract: No abstract text available Text: MGF1404-61-16 Transistors P-Channel UHF/Microwave MOSFET V BR DSS (V) V(BR)GSS (V)-6 I(D) Max. (A)80m P(D) Max. (W)200m Maximum Operating Temp (øC)150õ I(DSS) Min. (A)15m I(DSS) Max. (A)80m @V(DS) (V) (Test Condition)3 @Temp (øC) (Test Condition)25 g(fs) Min. (S) Trans. conduct.20m	Original	PDF	MGF1404-61-16 MGF1404
Untitled Abstract: No abstract text available Text: MGF1323 Transistors N-Channel UHF/Microwave MESFET V BR DSS (V) V(BR)GSS (V)-6.0 I(D) Max. (A)80m P(D) Max. (W)240m Maximum Operating Temp (øC)175 I(DSS) Min. (A)40m I(DSS) Max. (A)80m @V(DS) (V) (Test Condition)3.0 @Temp (øC) (Test Condition)25 g(fs) Min. (S) Trans. conduct.20	Original	PDF	MGF1323
Untitled Abstract: No abstract text available Text: 0017072 MITSUBISHI SEMICONDUCTOR <GaAs FET> 1S7 MGF1923 TAPE CARRIER SMALL SIGNAL GaAs FET DESCRIPTION OUTLINE DRAWING Unit: millimeters linches The M G F 1 9 2 3 , low noise GaAs FET with an N-channel 4 .0 ± 0 .2 Schottky gate, is designed for use in S to Ku band ampli	OCR Scan	PDF	MGF1923 13dBm 12GHz
MGF1801B Abstract: MGF1801 Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1801B f i MICROWAVE POWER GaAs FET DESCRIPTION OUTLINE DRAWING The M G F 1 8 0 1 B , m ed iu m -p o w e r GaAs FET w ith an Nchannel S ch o ttky gate, is designed fo r use in S to X band U n it 4M IN . m illi m e t e r s liu c h e s i	OCR Scan	PDF	MGF1801B MGF1801B MGF1801
mitsubishi microwave Abstract: MGF1601 Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1601B MICROWAVE POWER GaAs FET DESCRIPTION The M G F 1 6 0 1 B , m ed iu m -p o w er GaAs FET w ith an N channel S cho ttky g a te, is designed fo r use in S to X band am plifiers and oscillators. The herm etically sealed m etalceram ic package assures m inim um parasitic losses, and	OCR Scan	PDF	MGF1601B mitsubishi microwave MGF1601
MGF1302 Abstract: 251C Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1302 LOW NOISE GaAs FET DESCRIPTION O UTLINE DRAWING T h e M G F 1 3 0 2 is a low-noise GaAs F E T w ith an N-channel S c h o ttky gate, which is designed fo r use in S to X band 4 M IN . U n i t : m i l l i m e t e r s inches	OCR Scan	PDF	MGF1302 MGF1302 12GHz 251C
small signal GaAs FET Abstract: MGF1923 IL86 Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1923 TAPE CARRIER SM ALL SIGNAL GaAs FET DESCRIPTION The M G F 1 9 2 3 , low noise GaAs FET w ith an N-channel Schottky gate, is designed for use in S to Ku band ampli fiers. The M G F 1 9 2 3 is mounted in the super 12 tape.	OCR Scan	PDF	MGF1923 12GHz GF1923 small signal GaAs FET MGF1923 IL86

MGF1102 Abstract: mgf11 dual-gate N-Channel, Dual-Gate FET Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1102 ¡ FOR LOW-NOISE AMPLIFIERS DUAL-GATE N-CHANNEL SCHOTTKY BARRIER GATE TYPE DESCRIPTION OUTLINE DRAWING The M G F 1 1 0 2 is a low noise and high gain GaAs dual gate FET for L to C band applications. Unit: millimeters inches	OCR Scan	PDF	MGF1102 MGF1102 mgf11 dual-gate N-Channel, Dual-Gate FET
Untitled Abstract: No abstract text available Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1403B LOW NOISE GaAs FET DESCRIPTION The M G F 1 4 0 3 B low -rtoise GaAs FET w ith an N-channel S ch o ttky gate is designed fo r use in S to Ku band am pli fiers. The herm etically sealed m etal-ceram ic package as	OCR Scan	PDF	MGF1403B MGF1403B Ta-251S 12GHz
MGF1801B Abstract: No abstract text available Text: HIGH POWER Ga As FET M G F 1601B /1801 B /09xxx/24xxx Series Typical Characteristics Type MGF1801B MQF0904A . MGF090SA . IWIQF0908B M8F0M78 MGFQ909A * * MGFOStOA * M F0911A * «IOF2407À MGF241BA MQF243QA ★ ★ : Under development a s> 21.8 23.0 28.0	OCR Scan	PDF	1601B /09xxx/24xxx MGF1801B MQF0904A MGF090SA IWIQF0908B M8F0M78 MGFQ909A F0911A IOF2407À
VSF 203 NF Abstract: MGF1302 Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1302 LOW NOISE GaAs FET DESCRIPTION OUTLINE DRAWING T h e M G F 1 3 0 2 is a lo w noise G aA s F E T w ith an N -ch an nel S c h o ttk y gate, w h ic h is designed fo r use in S to X band Unit: millimeters inches 4 M iN .	OCR Scan	PDF	MGF1302 VSF 203 NF MGF1302
0619 Abstract: g720 Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1423B SMALL SIGNAL GaAs FET DESCRIPTION OUTLINE DRAWING The M G F 1 4 2 3 B , low -noise GaAs FET w ith an N -ch an nel S cho ttky gate, is designed fo r use in S to Ku band am p li U n it m i l l i m e t e r s i .r ic h e s t	OCR Scan	PDF	MGF1423B 157MIN 12GHz 10rcA 0619 g720
E 212 fet Abstract: No abstract text available Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1801B MICROWAVE POWER GaAs FET DESCRIPTION The M G F 1 8 0 1 B , medium-power GaAs FET with an Nchannel Schottky gate, is designed for use in S to X band amplifiers and oscillators. The hermetically sealed metalceramic package assures minimum parasitic losses, and	OCR Scan	PDF	MGF1801B E 212 fet
MGF1302 Abstract: No abstract text available Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1302 LOW NOISE GaAs FET DESCRIPTION O UTLINE DRAWING The M G F 1302 is a low-noise GaAs FET w ith an N-channel Schottky gate, which is designed for use in S to X band U n it: m illim e te rs inches 4 M IN . 1 . 8 5 ± 0 .2	OCR Scan	PDF	MGF1302 MGF1302 12GHz
Untitled Abstract: No abstract text available Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1903B TARE CARRIER LOW NOISE GaAs FET D E S C R IP T IO N The MGF1 9 0 3 B is a low noise GaAs FET with an N-channel Schottky gate, which is designed for use in S to Ku band amplifiers. The hermetically sealed metal-ceramic package	OCR Scan	PDF	MGF1903B MGF1903B F1303B.
E 212 fet Abstract: MGF1801BT Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1801BT TAPE CARRIER MICROWAVE POWER GaAs FET DESCRIPTION The MGF1801BT , medium-power GaAs FET with an N-channel Schottky gate , is designed for use S-X band amplifiers and oscillators. The hermetically sealed metal-ceramic package	OCR Scan	PDF	MGF1801BT MGF1801BT 23dBm 100mA E 212 fet
MGF1323 Abstract: small signal GaAs FET L to Ku band amplifiers KU 745 KU 608 ku 202 Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> beMTñST DD17Û3S BAT MGF1323 SMALL SIGNAL GaAs FET DESCRIPTION OUTLINE DRAWING T h e M G F 1 3 2 3 , low -noise G aA s F E T w ith U n it, m illim eters inches an N -channel 4 M IN . 1.85 ± 0 . 2 4 M IN . (0 .1 5 7 M IN .) (0 .0 7 3 + 0 .0 0 8 ) (0 .1 5 7 M \N .)	OCR Scan	PDF	MGF1323 MGF1323, 13dBm 157MIN. h24cia2tÃ 12GHz MGF1323 small signal GaAs FET L to Ku band amplifiers KU 745 KU 608 ku 202

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SiTime Corporation SIT8208AIMGF-18E-25.000000E

SiTime Corporation SIT8208AIMGF-18E-25.000000X

SiTime Corporation SIT8208AIMGF-18E-25.000000D

SiTime Corporation SIT8208AIMGF-18E-25.000000S

SiTime Corporation SIT8208AIMGF-18E-25.000000Y

MGF1 Datasheets (82)

MGF1 Datasheets Context Search

MGF1402B

MGF1953A

MGF1951A

MGF1951A

ID600A

gaas fet marking J

Untitled

MGF1404

Untitled

Untitled

MGF1801B

mitsubishi microwave

MGF1302

small signal GaAs FET

MGF1102

Untitled

MGF1801B

VSF 203 NF

0619

E 212 fet

MGF1302

Untitled

E 212 fet

MGF1323