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    MBRB8H100T4G Search Results

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    MBRB8H100T4G Price and Stock

    onsemi MBRB8H100T4G

    DIODE SCHOTTKY 100V 8A D2PAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MBRB8H100T4G Cut Tape 211 1
    • 1 $2.46
    • 10 $1.583
    • 100 $2.46
    • 1000 $2.46
    • 10000 $2.46
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    MBRB8H100T4G Digi-Reel 211 1
    • 1 $2.46
    • 10 $1.583
    • 100 $2.46
    • 1000 $2.46
    • 10000 $2.46
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    MBRB8H100T4G Reel 800
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.81898
    • 10000 $0.6985
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    Avnet Americas MBRB8H100T4G Reel 10 Weeks 1,600
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.69238
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    MBRB8H100T4G Reel 10 Weeks 3,200
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.696
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    Mouser Electronics MBRB8H100T4G 913
    • 1 $2.08
    • 10 $1.42
    • 100 $0.999
    • 1000 $0.799
    • 10000 $0.799
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    Newark MBRB8H100T4G Cut Tape 1
    • 1 $1.87
    • 10 $1.58
    • 100 $1.28
    • 1000 $1.28
    • 10000 $1.28
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    MBRB8H100T4G Reel 800
    • 1 $0.962
    • 10 $0.962
    • 100 $0.962
    • 1000 $0.962
    • 10000 $0.839
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    RS MBRB8H100T4G Bulk 5
    • 1 -
    • 10 $0.9
    • 100 $0.85
    • 1000 $0.76
    • 10000 $0.76
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    Future Electronics MBRB8H100T4G Reel 10 Weeks 1,600
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.705
    • 10000 $0.665
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    MBRB8H100T4G Reel 10 Weeks 1,600
    • 1 -
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    • 1000 $0.725
    • 10000 $0.685
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    Onlinecomponents.com MBRB8H100T4G
    • 1 -
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    • 1000 $0.8
    • 10000 $0.68
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    Bristol Electronics MBRB8H100T4G 212
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    Quest Components MBRB8H100T4G 169
    • 1 $2.1672
    • 10 $2.1672
    • 100 $1.192
    • 1000 $1.0836
    • 10000 $1.0836
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    Rochester Electronics MBRB8H100T4G 38,640 1
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    Ameya Holding Limited MBRB8H100T4G 1,125
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    Richardson RFPD MBRB8H100T4G 1,600
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    • 10000 $0.7
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    Avnet Asia MBRB8H100T4G 10 Weeks 1,600
    • 1 -
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    • 1000 -
    • 10000 $0.68772
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    Avnet Silica MBRB8H100T4G 11 Weeks 800
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    Chip1Stop MBRB8H100T4G Cut Tape 99
    • 1 $1.76
    • 10 $1.24
    • 100 $1.16
    • 1000 $1.16
    • 10000 $1.16
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    EBV Elektronik MBRB8H100T4G 800 12 Weeks 800
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    New Advantage Corporation MBRB8H100T4G 800 1
    • 1 -
    • 10 -
    • 100 -
    • 1000 $1.26
    • 10000 $1.26
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    MBRB8H100T4G Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MBRB8H100T4G On Semiconductor SWITCHMODE Schottky Power Rectifier Original PDF

    MBRB8H100T4G Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: MBRB8H100T4G, NBRB8H100T4G SWITCHMODE Schottky Power Rectifier Surface Mount Power Package This series of Power Rectifiers employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and


    Original     		PDF MBRB8H100T4G, NBRB8H100T4G AEC-Q101 MBRB8H100/D

    b8h100g

    Abstract: No abstract text available
    Text: MBRB8H100T4G SWITCHMODEt Schottky Power Rectifier Surface Mount Power Package This series of Power Rectifiers employs the Schottky Barrier principle in a large metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and


    Original     		PDF MBRB8H100T4G MBRB8H100/D b8h100g

    Untitled

    Abstract: No abstract text available
    Text: MBRB8H100T4G, NBRB8H100T4G SWITCHMODE Schottky Power Rectifier Surface Mount Power Package http://onsemi.com This series of Power Rectifiers employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and


    Original     		PDF MBRB8H100T4G, NBRB8H100T4G MBRB8H100/D

    b8h100g

    Abstract: MBRB8H100T4G
    Text: MBRB8H100T4G SWITCHMODEt Schottky Power Rectifier Surface Mount Power Package This series of Power Rectifiers employs the Schottky Barrier principle in a large metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and


    Original     		PDF MBRB8H100T4G MBRB8H100/D b8h100g MBRB8H100T4G

    schottky

    Abstract: MBR230LSFT1G MBR30100CT MBRF20H100CTG STPS30 MBR30H100CTG mbrs1645 MBRS2H100T3G T0-220 MBR20H100CTG
    Text: ONSEMI Part # MBR230LSFT1G MBRS2H100T3G MBRB8H100T4G MBR10H100CTG MBRB1645T4G MBR20H100CTG MBRB20H100CTT4G MBRF20H100CTG MBRB30H30CT-1G MBR30H30CTG MBR30L45CTG MBRB3045CT-1G MBRF30H60CTG MBR30H60CTG MBRB30H60CT-1G MBR30H100CTG MBR40L45CTG MBR41H100CTG MBRB41H100CT-1G


    Original     		PDF MBR230LSFT1G MBRS2H100T3G MBRB8H100T4G MBR10H100CTG MBRB1645T4G MBR20H100CTG MBRB20H100CTT4G MBRF20H100CTG MBRB30H30CT-1G MBR30H30CTG schottky MBR230LSFT1G MBR30100CT MBRF20H100CTG STPS30 MBR30H100CTG mbrs1645 MBRS2H100T3G T0-220 MBR20H100CTG

    B8H100G

    Abstract: B8H100 MBRB8H100T4G B8H1 C146C marking 146C
    Text: MBRB8H100T4G SWITCHMODEt Schottky Power Rectifier Surface Mount Power Package This series of Power Rectifiers employs the Schottky Barrier principle in a large metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and


    Original     		PDF MBRB8H100T4G MBRB8H100/D B8H100G B8H100 MBRB8H100T4G B8H1 C146C marking 146C

    b8h100g

    Abstract: MBRB8H100T4G
    Text: MBRB8H100T4G SWITCHMODEt Schottky Power Rectifier Surface Mount Power Package This series of Power Rectifiers employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and


    Original     		PDF MBRB8H100T4G MBRB8H100/D b8h100g MBRB8H100T4G

    b8h100g

    Abstract: B8H100
    Text: MBRB8H100T4G, NBRB8H100T4G SWITCHMODE Schottky Power Rectifier Surface Mount Power Package This series of Power Rectifiers employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and


    Original     		PDF MBRB8H100T4G, NBRB8H100T4G AEC-Q101 MBRB8H100/D b8h100g B8H100

    NTP2955G

    Abstract: m74vhc1gt50 MBRA340T3G NTR4003NT1G NCV78L00A ncv7420 MBRB20100CTT4G BAT54CL MBRS2H100T3G MBRS340T3G
    Text: 5V ±3% 80 mA 0.8 V — 6 mA 1 mA CS8101 5V ±2% 100 mA 0.6 V 50 mA 140 mA (100 mA) CS8151 5V ±2% 100 mA 0.6 V — 750 mA (200 mA) CS8221 5V ±2% 100 mA 0.6 V — NCV317L Adj ±4% 100 mA 1.9 V (Typ) — Overvoltage Current Limit Wakeup l Overtemperature


    Original     		PDF CS8101 CS8151 CS8221 NCV317L NCV553 SC-82 SOIC-20 SGD516/D NTP2955G m74vhc1gt50 MBRA340T3G NTR4003NT1G NCV78L00A ncv7420 MBRB20100CTT4G BAT54CL MBRS2H100T3G MBRS340T3G