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    MB85R256F Price and Stock

    KAGA FEI America Inc MB85R256FPF-G-BNDE1

    IC FRAM 256KBIT PARALLEL 28SOP
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    DigiKey MB85R256FPF-G-BNDE1 Tray
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    KAGA FEI America Inc MB85R256FPNF-G-JNE2

    IC FRAM 256KBIT PARALLEL 28SOP
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    DigiKey MB85R256FPNF-G-JNE2 Tube
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    KAGA FEI America Inc MB85R256FPFCN-G-BNDE1

    IC FRAM 256KBIT PAR 28TSOP I
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    DigiKey MB85R256FPFCN-G-BNDE1 Tray 128
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    Mouser Electronics MB85R256FPFCN-G-BNDE1 47
    • 1 $7.8
    • 10 $7.18
    • 100 $6.29
    • 1000 $5.79
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    KAGA FEI America Inc MB85R256FPNF-G-JNERE2

    IC FRAM 256KBIT PARALLEL 28SOP
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    KAGA FEI America Inc MB85R256FPF-G-BND-ERE1

    IC FRAM 256KBIT PARALLEL 28SOP
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    Find more MB85R256F price and stock on Findchips.com

    MB85R256F Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MB85R256FPFCN-G-BNDE1 Fujitsu Memory, Integrated Circuits (ICs), IC FRAM 256KBIT 150NS 28TSOP Original PDF
    MB85R256FPF-G-BNDE1 Fujitsu Memory, Integrated Circuits (ICs), IC FRAM 256KBIT 150NS 28SOP Original PDF
    MB85R256FPF-G-BND-ERE1 Fujitsu Electronics America Integrated Circuits (ICs) - Memory - IC FRAM 256K PARALLEL 28SOP Original PDF
    MB85R256FPNF-G-JNE2 FUJITSU Semiconductor IC FRAM 256KBIT PARALLEL 28SOP Original PDF
    MB85R256FPNF-G-JNERE2 Fujitsu Memory, Integrated Circuits (ICs), IC FRAM 256KBIT 150NS 28SOP Original PDF

    MB85R256F Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MB85R256F

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00011-1v0-E Memory FRAM 256 K 32 K x 8 Bit MB85R256F • DESCRIPTIONS The MB85R256F is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the


    Original     		PDF DS501-00011-1v0-E MB85R256F MB85R256F

    MB85R256FPF-G-BND-ERE1

    Abstract: MB85R256F
    Text: FUJITSU SEMICONDUCTOR FACT SHEET NP501-00010-1v0-E FRAM MB85R256F MB85R256F is a 256K-bits FRAM LSI using the ferroelectric process and CMOS process technologies for forming the nonvolatile memory cells. Because FRAM is able to write high-speed even though a nonvolatile memory,


    Original     		PDF NP501-00010-1v0-E MB85R256F MB85R256F 256K-bits 28-pins, FPT-28P-M19 FPT-28P-M17 MB85R256FPF-G-BND-ERE1

    MB85R256FPF

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00011-2v0-E Memory FRAM 256 K 32 K x 8 Bit MB85R256F • DESCRIPTIONS The MB85R256F is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the


    Original     		PDF DS501-00011-2v0-E MB85R256F MB85R256F MB85R256FPF

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00011-6v0-E Memory FRAM 256 K 32 K x 8 Bit MB85R256F • DESCRIPTIONS The MB85R256F is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the


    Original     		PDF DS501-00011-6v0-E MB85R256F MB85R256F

    MB85R256FPF

    Abstract: 8A10 MB85R256F Marking code M19
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00011-3v0-E Memory FRAM 256 K 32 K x 8 Bit MB85R256F • DESCRIPTIONS The MB85R256F is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the


    Original     		PDF DS501-00011-3v0-E MB85R256F MB85R256F MB85R256FPF 8A10 Marking code M19

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00011-6v0-E Memory FRAM 256 K 32 K x 8 Bit MB85R256F • DESCRIPTIONS The MB85R256F is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the


    Original     		PDF DS501-00011-6v0-E MB85R256F MB85R256F

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00011-7v0-E Memory FRAM 256 K 32 K x 8 Bit MB85R256F • DESCRIPTIONS The MB85R256F is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the


    Original     		PDF DS501-00011-7v0-E MB85R256F MB85R256F

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR FACT SHEET NP501-00010-3v0-E FRAM MB85R256F MB85R256F is a 256K-bits FRAM LSI using the ferroelectric process and CMOS process technologies for forming the nonvolatile memory cells. Because FRAM is able to write high-speed even though a nonvolatile memory,


    Original     		PDF NP501-00010-3v0-E MB85R256F MB85R256F 256K-bits FPT-28P-M19) FPT-28P-M19 FPT-28P-M17 FPT-28P-M01

    MB85R256FPF

    Abstract: MB85R256FPF-G-BND-ERE1
    Text: FUJITSU SEMICONDUCTOR FACT SHEET NP501-00010-2v0-E FRAM MB85R256F MB85R256F is a 256K-bits FRAM LSI using the ferroelectric process and CMOS process technologies for forming the nonvolatile memory cells. Because FRAM is able to write high-speed even though a nonvolatile memory,


    Original     		PDF NP501-00010-2v0-E MB85R256F MB85R256F 256K-bits FPT-28P-M19 FPT-28P-M17 FPT-28P-M01 MB85R256FPF MB85R256FPF-G-BND-ERE1