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    MARKING WMM Search Results

    MARKING WMM Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy
    5405/BCA Rochester Electronics LLC 5405 - Gate - Dual marked (M38510/00108BCA) Visit Rochester Electronics LLC Buy
    54AC20/SDA-R Rochester Electronics LLC 54AC20/SDA-R - Dual marked (M38510R75003SDA) Visit Rochester Electronics LLC Buy
    UHD503R/883 Rochester Electronics LLC UHD503R/883 - Dual marked (5962-8855101CA) Visit Rochester Electronics LLC Buy

    MARKING WMM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MT47H128M8CF-25

    Abstract: 8 resistor array 10k smd 103
    Text: 1Gb: x8, x16 Automotive DDR2 SDRAM Features Automotive DDR2 SDRAM MT47H128M8 – 16 Meg x 8 x 8 banks MT47H64M16 – 8 Meg x 16 x 8 banks Options1 Features • • • • • • • • • • • • • • • • • • • Marking • Configuration


    Original     		PDF MT47H128M8 MT47H64M16 18-compatible) 8192-cycle 09005aef840eff89 MT47H128M8CF-25 8 resistor array 10k smd 103

    Untitled

    Abstract: No abstract text available
    Text: 2Gb: x8, x16 Automotive DDR2 SDRAM Features Automotive DDR2 SDRAM MT47H256M8 – 32 Meg x 8 x 8 banks MT47H128M16 – 16 Meg x 16 x 8 banks Options1 Features • • • • • • • • • • • • • • • • • • • • Marking • Configuration


    Original     		PDF MT47H256M8 MT47H128M16 60-ball 84-ball DDR2-800) DDR2-667) 09005aef8441c566

    Untitled

    Abstract: No abstract text available
    Text: 1Gb: x8, x16 Automotive DDR2 SDRAM Features Automotive DDR2 SDRAM MT47H128M8 – 16 Meg x 8 x 8 banks MT47H64M16 – 8 Meg x 16 x 8 banks Options1 Features • • • • • • • • • • • • • • • • • • • Marking • Configuration


    Original     		PDF MT47H128M8 MT47H64M16 84-ball 60-ball DDR2-800) DDR2-667) 09005aef85a711f4

    Untitled

    Abstract: No abstract text available
    Text: 1Gb: x8, x16 Automotive DDR2 SDRAM Features Automotive DDR2 SDRAM MT47H128M8 – 16 Meg x 8 x 8 banks MT47H64M16 – 8 Meg x 16 x 8 banks Options1 Features • • • • • • • • • • • • • • • • • • • Marking • Configuration


    Original     		PDF MT47H128M8 MT47H64M16 60-ball 84-ball DDR2-800) DDR2-667) 09005aef840eff89

    Theta JC of FBGA

    Abstract: 256MbDDR2
    Text: 256Mb: x4, x8, x16 DDR2 SDRAM Features DDR2 SDRAM MT47H64M4 – 16 Meg x 4 x 4 banks MT47H32M8 – 8 Meg x 8 x 4 banks MT47H16M16 – 4 Meg x 16 x 4 banks Options1 Features • • • • • • • • • • • • • • • • • • Marking • Configuration


    Original     		PDF 256Mb: MT47H64M4 MT47H32M8 MT47H16M16 18-compatible) 8192-cycle 09005aef8117c187 256MbDDR2 Theta JC of FBGA

    BT 742

    Abstract: DDR2 2gb x16 industrial DDR2 x16 vm 256MB DDR 400 MT47H DDR2 SDRAM Meg x 16 x 16 banks led MR11 MT47H16M16 DDR2-400 DDR2-533
    Text: 256Mb: x4, x8, x16 DDR2 SDRAM Features DDR2 SDRAM MT47H64M4 – 16 Meg x 4 x 4 banks MT47H32M8 – 8 Meg x 8 x 4 banks MT47H16M16 – 4 Meg x 16 x 4 banks Options1 Features • • • • • • • • • • • • • • • • • • Marking • Configuration


    Original     		PDF 256Mb: MT47H64M4 MT47H32M8 MT47H16M16 60-ball 84-ball DDR2-667) DDR2-533) BT 742 DDR2 2gb x16 industrial DDR2 x16 vm 256MB DDR 400 MT47H DDR2 SDRAM Meg x 16 x 16 banks led MR11 MT47H16M16 DDR2-400 DDR2-533

    Untitled

    Abstract: No abstract text available
    Text: 512Mb: x4, x8, x16 DDR2 SDRAM Features DDR2 SDRAM MT47H128M4 – 32 Meg x 4 x 4 banks MT47H64M8 – 16 Meg x 8 x 4 banks MT47H32M16 – 8 Meg x 16 x 4 banks Options1 Features • • • • • • • • • • • • • • • • • Marking • Configuration


    Original     		PDF 512Mb: MT47H128M4 MT47H64M8 MT47H32M16 84-ball 60-ball 09005aef85651470

    mt47h32m8bp-3

    Abstract: TN-001
    Text: 256Mb: x4, x8, x16 DDR2 SDRAM Features DDR2 SDRAM MT47H64M4 – 16 Meg x 4 x 4 banks MT47H32M8 – 8 Meg x 8 x 4 banks MT47H16M16 – 4 Meg x 16 x 4 banks Options1 Features • • • • • • • • • • • • • • • • • • Marking • Configuration


    Original     		PDF 256Mb: MT47H64M4 MT47H32M8 MT47H16M16 18-compatible) 192-cycle 09005aef8117c187 mt47h32m8bp-3 TN-001

    256Mb

    Abstract: DDR2-400 DDR2-533 DDR2-667 MT47H16M16 MT47H32M8 MT47H32M8BP-3
    Text: 256Mb: x4, x8, x16 DDR2 SDRAM Features DDR2 SDRAM MT47H64M4 – 16 Meg x 4 x 4 banks MT47H32M8 – 8 Meg x 8 x 4 banks MT47H16M16 – 4 Meg x 16 x 4 banks Options1 Features • • • • • • • • • • • • • • • • • • Marking • Configuration


    Original     		PDF 256Mb: MT47H64M4 MT47H32M8 MT47H16M16 60-ball 84-ball DDR2-667) DDR2-533) 256Mb DDR2-400 DDR2-533 DDR2-667 MT47H16M16 MT47H32M8 MT47H32M8BP-3

    Untitled

    Abstract: No abstract text available
    Text: 2Gb: x4, x8 TwinDie DDR2 SDRAM Features TwinDie DDR2 SDRAM MT47H512M4 – 32 Meg x 4 x 8 Banks x 2 Ranks MT47H256M8 – 16 Meg x 8 x 8 Banks x 2 Ranks Features Options Marking • Configuration – 32 Meg x 4 x 8 banks x 2 ranks – 16 Meg x 8 x 8 banks x 2 ranks


    Original     		PDF MT47H512M4 MT47H256M8 63-ball DDR2-800) DDR2-667) DDR2-533) 09005aef8266acfe MT47H512M4

    u68a equivalent

    Abstract: MT47H128M8HQ-3
    Text: 1Gb: x4, x8, x16 1.55V DDR2 SDRAM Features DDR2 SDRAM MT47R256M4 – 32 Meg x 4 x 8 banks MT47R128M8 – 16 Meg x 8 x 8 banks MT47R64M16 – 8 Meg x 16 x 8 banks Options1 • • • • • • • • • • • • • • • • • • • Marking • Configuration


    Original     		PDF MT47R256M4 MT47R128M8 MT47R64M16 18-compatible) 8192-cycle 09005aef82b91d01 u68a equivalent MT47H128M8HQ-3

    Untitled

    Abstract: No abstract text available
    Text: 4Gb: x4, x8 TwinDie DDR2 SDRAM Features TwinDie DDR2 SDRAM MT47H1G4 – 64 Meg x 4 x 8 Banks x 2 Ranks MT47H512M8 – 32 Meg x 8 x 8 Banks x 2 Ranks Features Options Marking • Configuration – 64 Meg x 4 x 8 banks x 2 ranks – 32 Meg x 8 x 8 banks x 2 ranks


    Original     		PDF MT47H1G4 MT47H512M8 63-ball DDR2-800) DDR2-667) DDR2-533) 09005aef8227ee4d mt47h1g

    Fuji Electric SM

    Abstract: No abstract text available
    Text: X 1. SCOPE This s p e c ific a tio n provides the ratings and the te s t requirement for FUJI SILICON DIODE YG801C09R 2. POT VIEW • MARKING- MOLDING RESIN 1 Out view is shown {2) Marking is shown I t is marked to type name or abbreviated type name, p o la rity and Lot No.


    OCR Scan     		PDF YG801C09R Fuji Electric SM

    Untitled

    Abstract: No abstract text available
    Text: wmmt BFS17/BFS17R/BFS17W Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For broadband amplifiers up to 1 GHz. Features • High power gain • SMD-package 1 BFS17 Marking: E1


    OCR Scan     		PDF BFS17/BFS17R/BFS17W BFS17 BFS17R BFS17W 20-Jan-99

    TRA1

    Abstract: No abstract text available
    Text: SCHOTTKY BARRIER DIODE EP05Q04 0.s a /40 v FEA TU RES OJEDEC SOD-123 Package oV ery Low profile 1.1mm Max o High Surge Capability o Low Thermal Resistance OUL 94, VO O Packaged in 8mm tape Device Marking ~ ~ _Month of Mfg. A=Jan. B = Feb.—L=Dec. Year of Mfg. 7=1997


    OCR Scan     		PDF EP05Q04 OD-123 bblS123 TRA1

    LAMBDA over Voltage

    Abstract: CSA950 75KVA
    Text: ZWD75-SERIES Dual output 51W ~ 63W DENSEI-LAMBDA Model name ZWD 75-0524 Output voltage: 0512:5V, 12V 0524' 5V 24V Name of series Output power: 75W at peak PC Board Type Power Supply • Features • ce marking (Low Voltage Directive) • • • • +5V output for logic, +12/24V output for mechanical driving


    OCR Scan     		PDF ZWD75-series 12/24V 100/200VAC, 132VAC 265VAC 440Hz) 330VDC LAMBDA over Voltage CSA950 75KVA

    marking WMM

    Abstract: WS-002
    Text: RoHS COMPLIANT RS CUSTOMER: P /N : 3 0 5 -5 9 8 REV. . APPROVED REVISIONS BY: REV. DESCRIPTION A 2010±50 DATE A BLUE NOTES: 1. 2. G R N /Y E L -c BROWN - 4 - 0 y 3. Z0680140 Ü R ^ 18X 15 II^EIg Pantone 185 Ä|/Jvg MARKING: R Hfifc ! 305598 10A 250V- Power Cord


    OCR Scan     		PDF Z0680140 300dpi) WS-002 H05VV-F ftffll28A marking WMM

    LTF3216L

    Abstract: FR90A LTF3216L-F2R4G LTF3216L-FR90G LTF3216L-F1R3G HP8719D LTF3216L-FR90gl FR90
    Text: TYPE 54 Multilayer Chip Low-Pass Fitter LTF3216L-F Series 7 8tl * y r*? i I:' TYPE LTF3216L-F Series L INPUT MARKING TOKO NUMBER 2R4 ¡D IM E N S IO N S / L mm W (mm) T (mm) a (mm) b (mm) 3.2±0.3 1.6 + 0.3 1. 4 + 0.2 0.5+ 0.3 0.8 ±0.3 Top View Side View


    OCR Scan     		PDF LTF3216L-F 800MHz 500MHz LTF3216L-F LTF3216L-FR90G LTF3216L-F1 LTF3216L-F2R4G LTF3216L FR90A LTF3216L-F1R3G HP8719D LTF3216L-FR90gl FR90

    Untitled

    Abstract: No abstract text available
    Text: M IC R O N MT8C8024 DRAM MODULE 1MEG x 8 DRAM FAST PAGE MODE PIN ASSIGNMENT (Top View OPTIONS Vcc CÄ5 DQ1 A0 A1 DQ2 A2 A3 Vss DQ3 A4 A5 DQ4 A6 A7 DQ5 A8 A9 NC DQ6 W Vss DQ7 NC DQ8 NC raS NC NC Vcc MARKING • Tim ing 80ns access 100ns access 120ns access


    OCR Scan     		PDF MT8C8024 100ns 120ns 30-pin MT8C8024

    MARKING CODE EA1

    Abstract: A-185 ERB93-02 T930 marking R810
    Text: ERB93-02 i ,5A * ± 'J : Outline Drawings LOW LOSS SUPER HIGH SPEED RECTIFIER • S H : : Features •te V F ■i^Tjv : Marking Low V F • X < •y ^ y ^ f c T - K d r '^ t t U j S v .' * 5 - 3 - K:H Super high speed sw itch in g . Color code : Silver High reliability by planer design.


    OCR Scan     		PDF ERB93-02 I95t/R89) MARKING CODE EA1 A-185 T930 marking R810

    jeida dram card 5v

    Abstract: jeida dram 88 pin 88 pins dram card
    Text: M I in P r iM M T16D 88C 232 2 MEG x 32, 4 MEG x 16 IC DRAM CARD ^ IC DRAM CARD 8 MEGABYTES 2 MEG x 32, 4 MEG x 16 FEATURES PIN ASSIGNMENT End View 88-Pin Card (DF-1) OPTIONS MARKING • Timing 60ns access 70ns access 80ns access -6 -7 Part Number Example: MT16D88C232-6


    OCR Scan     		PDF 88-pin 128ms jeida dram card 5v jeida dram 88 pin 88 pins dram card

    MARKing l4T

    Abstract: T460 t930 ERA91-02 mat03
    Text: E R A 9 1-02 0 .5A _ • * » - * » : O u tlin e D ra w in g s LOW LOSS SUPER HIGH SPEED RECTIFIER ■ t t * : Features m f r m , 5 m m t '^ m a «m ■ ^ T jv U ltra small package. Marking Possible fo r 5m m pitch a utom atic insertion. t> ? - □ - V : Ê


    OCR Scan     		PDF ERA91 I95t/R89) MARKing l4T T460 t930 ERA91-02 mat03

    CB903-4

    Abstract: ML marking rft t-200
    Text: CB903-4 1 OA ¡SbiS ^ I O utline D raw ings K LOW LOSS SUPER HIGH SPEED RECTIFIER -w03.0 ! L nr-MIN. 25 I 5.0 00.8 M 25m,n. • i $ f i : Features • ftV P Low V f ■ S / K ^ Marking S u p e r h ig h speed s w itc h in g . *7 - 3 - K : SH Color code : S ilver


    OCR Scan     		PDF CB903-4 17-3-K 1504C ML marking rft t-200

    Untitled

    Abstract: No abstract text available
    Text: wmmt BFP181T/BFP181TW/BFP181TRW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low noise and high gain broadband amplifiers at collector currents from 0.5 mA to 12 mA. Features


    OCR Scan     		PDF BFP181T/BFP181TW/BFP181TRW BFP181TW BFP181TRW BFP181T 20-Jan-99 BFP181T/BFP1hay