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    MARKING B12 DIODE Search Results

    MARKING B12 DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    MARKING B12 DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    marking B12 diode SCHOTTKY

    Abstract: DIODE B12 smd diode code B12 B12 DIODE smd marking b12 marking B12 diode smd diode b12 diode marking code B12 TSC Date Code marking smd diode marking code g
    Text: RB520G-30 Low VF SMD Schottky Barrier Diode Small Signal Diode SOD-723F B Features A C —Ultra smail mold type,high reliability,low IR low VF —Surface device type mounting D —Moisture sensitivity level 1 —Matte Tin Sn lead finish with Nickel(Ni) underplate


    Original     		PDF RB520G-30 OD-723F OD-723F MIL-STD-202, C/10s marking B12 diode SCHOTTKY DIODE B12 smd diode code B12 B12 DIODE smd marking b12 marking B12 diode smd diode b12 diode marking code B12 TSC Date Code marking smd diode marking code g

    Untitled

    Abstract: No abstract text available
    Text: RB520G-30 Low VF SMD Schottky Barrier Diode Small Signal Diode SOD-723F B Features A C ­Ultra smail mold type,high reliability,low IR low VF ­Surface device type mounting D ­Moisture sensitivity level 1 ­Matte Tin Sn lead finish with Nickel(Ni) underplate


    Original     		PDF RB520G-30 OD-723F OD-723F MIL-STD-202,

    marking B12 diode SCHOTTKY

    Abstract: MBRS120T3 marking b12 rectifier diode B12
    Text: MBRS120T3 Preferred Device Surface Mount Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay


    Original     		PDF MBRS120T3 Re120T3 marking B12 diode SCHOTTKY MBRS120T3 marking b12 rectifier diode B12

    marking B12 diode SCHOTTKY

    Abstract: MBRS120T3 diode marking code B12
    Text: MBRS120T3 Preferred Device Surface Mount Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay


    Original     		PDF MBRS120T3 marking B12 diode SCHOTTKY MBRS120T3 diode marking code B12

    Untitled

    Abstract: No abstract text available
    Text: TESDC24V Bi-directional ESD Protection Diode Small Signal Diode SOD-323 Features —Meet IEC61000-4-2 ESD ±15kV (air), ±8kV (contact) —Meet IEC61000-4-4 (EFT) rating. 40A (5/50ήs) —Protects one birectional I/O line —Working Voltage : 24V —Pb free version, RoHS compliant, and Halogen free


    Original     		PDF TESDC24V OD-323 IEC61000-4-2 IEC61000-4-4 OD-323 MIL-STD-202, C/10s

    marking B12 diode SCHOTTKY

    Abstract: b12 marking MBRS120T3 B12 DIODE marking B12
    Text: MBRS120T3 Preferred Device Surface Mount Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay


    Original     		PDF MBRS120T3 marking B12 diode SCHOTTKY b12 marking MBRS120T3 B12 DIODE marking B12

    DIODE B12

    Abstract: B12 diode ERB12-02 Diode Mark B12 DIODE 1.0A 1000V ERB12-10 rectifier diode B12 b12 marking erb12 general purpose diode marking code -06
    Text: ERB12 1.0A (100V to 1000V / 1.0A ) Outline drawings, mm GENERAL USE RECTIFIER DIODE ø3.0 ø0.8 5.0 28 MIN. 28 MIN. Features Marking Compact size, light weight High reliability Cathode mark Abridged type name General purpose rectifier applications N1 N1


    Original     		PDF ERB12 ERB12-01 ERB12-02 ERB12-04 ERB12-06 ERB12-10 ERB12 DIODE B12 B12 diode ERB12-02 Diode Mark B12 DIODE 1.0A 1000V ERB12-10 rectifier diode B12 b12 marking general purpose diode marking code -06

    marking B12 diode SCHOTTKY

    Abstract: b12 marking MBRS120T3 DIODE B12 51 DIODE B12 B12 diode b12 diodes on semiconductor marking B12 diode
    Text: MBRS120T3 Preferred Device Surface Mount Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay


    Original     		PDF MBRS120T3 r14525 MBRS120T3/D marking B12 diode SCHOTTKY b12 marking MBRS120T3 DIODE B12 51 DIODE B12 B12 diode b12 diodes on semiconductor marking B12 diode

    Diode Mark B12

    Abstract: B12 diode DIODE B12 marking B12 diode ERB12-02 ERB12-06 ERB12 B12 mark diode marking code B12 DIODE ERB12
    Text: ERB12 1.0A (100V to 1000V / 1.0A ) Outline drawings, mm GENERAL USE RECTIFIER DIODE ø3.0 ø0.8 5.0 28 MIN. 28 MIN. Features Marking Compact size, light weight High reliability Cathode mark Abridged type name General purpose rectifier applications N1 N1


    Original     		PDF ERB12 ERB12-01 ERB12-02 ERB12-04 ERB12-06 ERB12-10 ERB12 Diode Mark B12 B12 diode DIODE B12 marking B12 diode ERB12-02 ERB12-06 B12 mark diode marking code B12 DIODE ERB12

    ERB12-02

    Abstract: Diode Mark B12 h2 marking general purpose diode marking code -06 ERB12-10
    Text: ERB12 1.0A (100V to 1000V / 1.0A ) Outline drawings, mm GENERAL USE RECTIFIER DIODE ø3.0 ø0.8 5.0 28 MIN. 28 MIN. Features Marking Compact size, light weight High reliability Cathode mark Abridged type name General purpose rectifier applications N1 N1


    Original     		PDF ERB12 ERB12-01 ERB12-02 ERB12-04 ERB12-06 ERB12-10 ERB12 Diode Mark B12 h2 marking general purpose diode marking code -06 ERB12-10

    DIODE B12

    Abstract: B12 DIODE marking B12 diode N-channel 500V mosfet B12 68 diode MARKING CODE mosfet high power diode 500v TSM8N50 DIODE B12 48 n-channel 250V power mosfet dpak
    Text: TSM8N50 500V N-Channel MOSFET TO-251 IPAK TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS (V) RDS(on)(Ω) ID (A) 500 0.85 @ VGS =10V 7.2 Features Block Diagram ● Low On-Resistance. ● High power and current handing capability.


    Original     		PDF TSM8N50 O-251 O-252 TSM8N50CH 75pcs TSM8N50CP O-252 DIODE B12 B12 DIODE marking B12 diode N-channel 500V mosfet B12 68 diode MARKING CODE mosfet high power diode 500v TSM8N50 DIODE B12 48 n-channel 250V power mosfet dpak

    Untitled

    Abstract: No abstract text available
    Text: TSZU52C2V0 – TSZU52C39 Pb RoHS 150mW SMD Zener Diode COMPLIANCE 0603 Features ­ ­ ­ ­ ­ 150mW Power dissipation. High voltages from 2 ~ 39V Designed for mounting on small surface Extremely thin/leadless package Pb free product Mechanical Data ­ ­


    Original     		PDF TSZU52C2V0 TSZU52C39 150mW MIL-STD-750, TSZU52C18 TSZU52C20 TSZU52C22 TSZU52C24 TSZU52C27

    VB11

    Abstract: VA1C monitor EHT transformer 0722 456 00014 UL3239 VB11 MARKING 5 PIN Diode Mark B12 3239 TAISHO
    Text: BCcomponents DATA SHEET FMP-MLT-17 Focus Metal-glaze Preset for Monitor Line Transformer 17"/19", 28 kV Objective specification Supersedes data of 21st October 1999 File under BCcomponents, BC03 2000 Jul 20 BCcomponents Objective specification Focus Metal-glaze Preset for Monitor Line


    Original     		PDF FMP-MLT-17 FMP-MLT-17 HQV-14/001" 10-6/V 10-6/K HQV-22/002" PRV-53-8-52/48" VB11 VA1C monitor EHT transformer 0722 456 00014 UL3239 VB11 MARKING 5 PIN Diode Mark B12 3239 TAISHO

    SMD MARKING CODE b24

    Abstract: SMD MARKING CODE B15 bzv55c3v3 BZV55-C5V1 SOD80C BZV55A5V1 BZV55C16 PHILIPS smd code dn BZV55 ordering SMD MARKING CODE B36 SOD80c
    Text: Philips Semiconductors - PIP - BZV55 series; Voltage regulator diodes Submit Que Philips Semiconductors Home ProductBuy MySemiconductors ContactProduct Information catalogonline BZV55 series; Voltage regulator diodes Information as of 2003-01-21 My.Semiconductors.COM.


    Original     		PDF BZV55 SMD MARKING CODE b24 SMD MARKING CODE B15 bzv55c3v3 BZV55-C5V1 SOD80C BZV55A5V1 BZV55C16 PHILIPS smd code dn BZV55 ordering SMD MARKING CODE B36 SOD80c

    DIODE B12 51

    Abstract: DIODE B12 B12 DIODE ultra low igss pA mosfet DIODE B12 60 p-CHANNEL MOSFET P-Channel MOSFET code 1A P-Channel mosfet 25v sop8 mosfet marking B12 diode marking code B12
    Text: TSM9434 20V P-Channel MOSFET SOP-8 PRODUCT SUMMARY Pin Definition: 1. Source 8. Drain 2. Source 7. Drain 3. Source 6. Drain 4. Gate 5. Drain VDS V RDS(on)(mΩ) ID (A) 40 @ VGS = -4.5V -6.4 60 @ VGS = -2.5V -5.1 -20 Features Block Diagram ● Advance Trench Process Technology


    Original     		PDF TSM9434 TSM9434CS DIODE B12 51 DIODE B12 B12 DIODE ultra low igss pA mosfet DIODE B12 60 p-CHANNEL MOSFET P-Channel MOSFET code 1A P-Channel mosfet 25v sop8 mosfet marking B12 diode marking code B12

    DIODE B12

    Abstract: No abstract text available
    Text: TSM4416D 30V Dual N-Channel MOSFET SOP-8 Pin Definition: 1. Source 1 8. Drain 1 2. Gate 1 7. Drain 1 3. Source 2 6. Drain 2 4. Gate 2 5. Drain 2 PRODUCT SUMMARY VDS V 30 Features RDS(on)(mΩ) ID (A) 15 @ VGS = 10V 11 24 @ VGS = 4.5V 10 Block Diagram ●


    Original     		PDF TSM4416D TSM4416DCS DIODE B12

    TSM4513D

    Abstract: P-Channel mosfet 25v sop8 mosfet marking B12
    Text: TSM4513D Complementary Enhancement MOSFET SOP-8 MOSFET PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Source 1 8. Drain 1 2. Gate 1 7. Drain 1 3. Source 2 6. Drain 2 4. Gate 2 5. Drain 2 N-Channel 20 P-Channel -20 ID (A) 14 @ VGS = 4.5V 6 16 @ VGS = 2.5V


    Original     		PDF TSM4513D TSM4513DCS TSM4513D P-Channel mosfet 25v sop8 mosfet marking B12

    zener diode b27

    Abstract: 5B1 zener diode B20 zener diode smd 5b1 zener Diode B22 diode zener B16 zener smd marking EA smd diode code B12 6b2 zener diode smd transistor marking ey
    Text: MM3Z2B4~MM3ZB39 ±2% SILICON PLANAR ZENER DIODES FEATURES ● Total power dissipation: max. 200 mW ● Small plastic package suitable for surface mounted design DESCRIPTION Silicon planar zener diode in a small plastic SMD SOD-323 package Absolute Maximum Ratings (Ta = 25oC)


    Original     		PDF MM3ZB39 OD-323 OD-323 zener diode b27 5B1 zener diode B20 zener diode smd 5b1 zener Diode B22 diode zener B16 zener smd marking EA smd diode code B12 6b2 zener diode smd transistor marking ey

    smd 5b1

    Abstract: smd transistor 5B1 5B1 zener diode smd transistor marking ey B20 zener diode planar transistor 5B1 ez 724 zener diode 4B3 B15 diode smd b36 smd diode
    Text: MM3Z2B4~MM3ZB39 ±2% SILICON PLANAR ZENER DIODES FEATURES ● Total power dissipation: max. 200 mW ● Small plastic package suitable for surface mounted design DESCRIPTION Silicon planar zener diode in a small plastic SMD SOD-323 package Absolute Maximum Ratings (Ta = 25oC)


    Original     		PDF MM3ZB39 OD-323 OD-323 smd 5b1 smd transistor 5B1 5B1 zener diode smd transistor marking ey B20 zener diode planar transistor 5B1 ez 724 zener diode 4B3 B15 diode smd b36 smd diode

    5B1 zener diode

    Abstract: 6b2 zener diode zener diode 4B3 B20 zener diode smd diode b13 zener diode b27 b16 zener b36 smd diode zener b27 smd diode code B12
    Text: MM3Z2B4~MM3ZB39 ±2% SILICON PLANAR ZENER DIODES FEATURES ● Total power dissipation: max. 200 mW ● Small plastic package suitable for surface mounted design DESCRIPTION Silicon planar zener diode in a small plastic SMD SOD-323 package Absolute Maximum Ratings (Ta = 25oC)


    Original     		PDF MM3ZB39 OD-323 OD-323 5B1 zener diode 6b2 zener diode zener diode 4B3 B20 zener diode smd diode b13 zener diode b27 b16 zener b36 smd diode zener b27 smd diode code B12

    Untitled

    Abstract: No abstract text available
    Text: BZX84B2V4 . BZX84B47 300 mW BZX84B2V4 . BZX84B47 (300 mW) Surface mount Silicon Planar Zener Diodes Silizium-Planar-Zener-Dioden für die Oberflächenmontage Version 2014-01-03 1.1 2.9 ±0.1 0.4 2.5 ±0.1 1.3 max 3 Type Code 2 1 Power dissipation – Verlustleistung


    Original     		PDF BZX84B2V4 BZX84B47 OT-23 O-236) UL94V-0

    Zener B12

    Abstract: diode zener zx 3.9v diode zener smd 5v1 marking code z0 5V1 SMD ZENER SMD MARKING CODE Z2 TSZU52C13 3.9V ZENER DIODE smd marking b12 TSZU52C24
    Text: TSZU52C2V0 – TSZU52C39 Pb RoHS 150mW SMD Zener Diode COMPLIANCE 0603 Features — — — — — 150mW Power dissipation. High voltages from 2 ~ 39V Designed for mounting on small surface Extremely thin/leadless package Pb free product Mechanical Data — —


    Original     		PDF TSZU52C2V0 TSZU52C39 150mW MIL-STD-750, Zener B12 diode zener zx 3.9v diode zener smd 5v1 marking code z0 5V1 SMD ZENER SMD MARKING CODE Z2 TSZU52C13 3.9V ZENER DIODE smd marking b12 TSZU52C24

    US1M spice

    Abstract: No abstract text available
    Text: US1A - US1M 1.0A SURFACE MOUNT ULTRA-FAST RECTIFIER SPICE MODELS: US1A US1B US1D US1G US1J US1K US1M Features • · · · · · · Glass Passivated Die Construction Diffused Junction Ultra-Fast Recovery Time for High Efficiency Low Forward Voltage Drop, High Current


    Original     		PDF MIL-STD-202, DS16008 US1M spice

    B12 diodeS

    Abstract: No abstract text available
    Text: PR1501/S - PR1505/S 1.5A FAST RECOVERY RECTIFIER Features • · · · · · Diffused Junction Fast Switching for High Efficiency High Current Capability and Low Forward Voltage Drop Surge Overload Rating to 50A Peak Low Reverse Leakage Current Plastic Material: UL Flammability


    Original     		PDF PR1501/S PR1505/S DO-41 MIL-STD-202, DO-15 DO-15 PR1501 PR1504 PR1505 B12 diodeS