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    MARKING 5D NPN Search Results

    MARKING 5D NPN Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    MX0912B251Y Rochester Electronics LLC MX0912B251Y - NPN Silicon RF Power Transistor (Ampleon Die) Visit Rochester Electronics LLC Buy
    CA3083Z-G Rochester Electronics LLC CA3083 - GENERAL PURPOSE HIGH CURRENT NPN TRANSISTOR ARRAY Visit Rochester Electronics LLC Buy
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy

    MARKING 5D NPN Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    DSC8102

    Abstract: No abstract text available
    Text: DSC8102 Tentative Total pages page DSC8102 Silicon NPN epitaxial planar type For Low-frequency amplifier Marking Symbol : 5D Package Code : MT-2-A1-B Absolute Maximum Ratings Ta = 25 °C Parameter Collector-base voltage Emitter open Collector-emitter voltage (Base open)


    Original     		PDF DSC8102 DSC8102

    Untitled

    Abstract: No abstract text available
    Text: BC847B Transistors NPN General Purpose Transistor BC847B Features 1 BVCEO < 45V IC=1mA) 2) Complements the BC857B. External dimensions (Unit : mm) 2.9±0.2 0.95 +0.2 −0.1 1.9±0.2 Packaging type SST3 Marking G1F Code T116 Basic ordering unit (pieces) 3000


    Original     		PDF BC847B BC857B.

    UMT222A

    Abstract: TRANSISTOR 1P transistors marking 1p BC847B BC857B MMST2222A PN2222A T116 B128D MARKING 5D NPN
    Text: BC847B Transistors NPN General Purpose Transistor BC847B zExternal dimensions Unit : mm zFeatures 1) BVCEO < 45V (IC=1mA) 2) Complements the BC857B. 2.9±0.2 0.95 +0.2 −0.1 1.9±0.2 zPackage, marking, and Packaging specifications Packaging type SST3 Marking


    Original     		PDF BC847B BC857B. UMT222A TRANSISTOR 1P transistors marking 1p BC847B BC857B MMST2222A PN2222A T116 B128D MARKING 5D NPN

    Untitled

    Abstract: No abstract text available
    Text: BC847B Transistors NPN General Purpose Transistor BC847B zExternal dimensions Unit : mm zFeatures 1) BVCEO < 45V (IC=1mA) 2) Complements the BC857B. 2.9±0.2 0.95 +0.2 −0.1 1.9±0.2 zPackage, marking, and Packaging specifications Packaging type SST3 Marking


    Original     		PDF BC847B BC857B. BC847B

    SST3904

    Abstract: 2N3904 Transistors UMT3904 2N3904 equivalent 2N3904 transistor data sheet free download marking CODE r1a transistor R1A 2N3906 MMST3904 MMST3906
    Text: UMT3904 / SST3904 / MMST3904 / 2N3904 Transistors NPN General Purpose Transistor UMT3904 / SST3904 / MMST3904 / 2N3904 !External dimensions Units : mm 2.0±0.2 UMT3904 0.9±0.1 1.3±0.1 0.65 0.65 ROHM : UMT3 EIAJ : SC-70 0.2 0.7±0.1 (3) 2.1±0.1 (2) 1.25±0.1


    Original     		PDF UMT3904 SST3904 MMST3904 2N3904 UMT3904 SC-70 2N3904 Transistors 2N3904 equivalent 2N3904 transistor data sheet free download marking CODE r1a transistor R1A 2N3906 MMST3906

    transistor 131 8D

    Abstract: g1k bc848b BC848C BC848B BC848BW BC858B BC858BW T106 T116 MARKING 5D NPN
    Text: BC848BW / BC848B / BC848C Transistors NPN General Purpose Transistor BC848BW / BC848B / BC848C !External dimensions Units : mm !Features 1) BVCEO minimum is 30V (IC=1mA) 2) Complements the BC858B / BC858BW. BC848BW 2.0±0.2 0.9±0.1 1.3±0.1 0.65 0.65 0.2


    Original     		PDF BC848BW BC848B BC848C BC858B BC858BW. BC848BW SC-70 transistor 131 8D g1k bc848b BC848C BC858BW T106 T116 MARKING 5D NPN

    sot-23 Marking 3D

    Abstract: KST5088 KST5089 5089 silicon npn transistor transistor 5d
    Text: KST5088/5089 KST5088/5089 Low Noise Transistor 2 1 SOT-23 NPN Epitaxial Silicon Transistor 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO Parameter Value Units : KST5088 : KST5089 35 30 V V : KST5088


    Original     		PDF KST5088/5089 OT-23 KST5088 KST5089 sot-23 Marking 3D KST5088 KST5089 5089 silicon npn transistor transistor 5d

    SST3904

    Abstract: UMT3904 2N3904 Transistors marking CODE r1a 2N3904 2N3906 MMST3904 MMST3906 SST3906 T106
    Text: UMT3904 / SST3904 / MMST3904 / 2N3904 Transistors NPN General Purpose Transistor UMT3904 / SST3904 / MMST3904 / 2N3904 zExternal dimensions Unit : mm 2.0±0.2 UMT3904 0.9±0.1 1.3±0.1 0.65 0.65 ROHM : UMT3 EIAJ : SC-70 0.7±0.1 0.2 (3) 2.1±0.1 (2) 1.25±0.1


    Original     		PDF UMT3904 SST3904 MMST3904 2N3904 UMT3904 SC-70 2N3904 Transistors marking CODE r1a 2N3904 2N3906 MMST3906 SST3906 T106

    Untitled

    Abstract: No abstract text available
    Text: BC848BW / BC848B Transistors NPN General Purpose Transistor BC848BW / BC848B External dimensions Unit : mm Features 1) BVCEO minimum is 30V (IC=1mA) 2) Complements the BC858B / BC858BW. BC848BW 2.0±0.2 0.9±0.1 1.3±0.1 0.65 0.65 0.2 0.7±0.1 0~0.1 0.1~0.4


    Original     		PDF BC848BW BC848B BC858B BC858BW. BC848BW SC-70 BC848B, BC848C

    BC848B

    Abstract: transistor 131 8D BC848BW BC848C BC858B BC858BW T106 T116 MARKING 5D NPN
    Text: BC848BW / BC848B Transistors NPN General Purpose Transistor BC848BW / BC848B zExternal dimensions Unit : mm zFeatures 1) BVCEO minimum is 30V (IC=1mA) 2) Complements the BC858B / BC858BW. BC848BW 2.0±0.2 0.9±0.1 1.3±0.1 0.65 0.65 0.2 0.7±0.1 0~0.1 0.1~0.4


    Original     		PDF BC848BW BC848B BC858B BC858BW. BC848BW SC-70 BC848B, BC848C BC848B transistor 131 8D BC848C BC858BW T106 T116 MARKING 5D NPN

    SST3904

    Abstract: UMT3904 2N3904 Transistors 2n3906 hie 2N3904 2N3906 MMST3904 MMST3906 SST3906 T106
    Text: UMT3904 / SST3904 / MMST3904 / 2N3904 Transistors NPN General Purpose Transistor UMT3904 / SST3904 / MMST3904 / 2N3904 !External dimensions Units : mm 2.0±0.2 UMT3904 0.9±0.1 1.3±0.1 0.65 0.65 ROHM : UMT3 EIAJ : SC-70 0.2 0.7±0.1 (3) 2.1±0.1 (2) 1.25±0.1


    Original     		PDF UMT3904 SST3904 MMST3904 2N3904 UMT3904 SC-70 2N3904 Transistors 2n3906 hie 2N3904 2N3906 MMST3906 SST3906 T106

    Untitled

    Abstract: No abstract text available
    Text: UMT3904 / SST3904 / MMST3904 Transistors NPN General Purpose Transistor UMT3904 / SST3904 / MMST3904 Features 1 BVCEO > 40V IC = 1mA) 2) Complements the UMT3906 / SST3906 / MMST3906. Dimensions (Unit : mm) UMT3904 (1) Emitter (2) Base (3) Collector ROHM : UMT3


    Original     		PDF UMT3904 SST3904 MMST3904 UMT3906 SST3906 MMST3906. UMT3904

    SST3904

    Abstract: UMT3904 marking CODE r1a transistor R1A marking "3D 0D" MMST3904 MMST3906 SST3906 T106 T116
    Text: UMT3904 / SST3904 / MMST3904 Transistors NPN General Purpose Transistor UMT3904 / SST3904 / MMST3904 zFeatures 1 BVCEO > 40V IC = 1mA) 2) Complements the UMT3906 / SST3906 / MMST3906. zDimensions (Unit : mm) UMT3904 (1) Emitter (2) Base (3) Collector ROHM : UMT3


    Original     		PDF UMT3904 SST3904 MMST3904 UMT3906 SST3906 MMST3906. UMT3904 marking CODE r1a transistor R1A marking "3D 0D" MMST3904 MMST3906 T106 T116

    KST5088

    Abstract: KST5089 MARK 5D SOT
    Text: KST5088/5089 KST5088/5089 Low Noise Transistor 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO Parameter Value Units : KST5088 : KST5089 35 30 V V : KST5088


    Original     		PDF KST5088/5089 OT-23 KST5088 KST5089 100ner KST5088 KST5089 MARK 5D SOT

    Untitled

    Abstract: No abstract text available
    Text: BC848BW / BC848B Transistors NPN General Purpose Transistor BC848BW / BC848B zExternal dimensions Unit : mm zFeatures 1) BVCEO minimum is 30V (IC=1mA) 2) Complements the BC858B / BC858BW. BC848BW 2.0±0.2 0.9±0.1 1.3±0.1 0.65 0.65 0.2 0.7±0.1 0~0.1 0.1~0.4


    Original     		PDF BC848BW BC848B BC858B BC858BW. BC848BW SC-70 BC848B, BC848C

    MARKING 5D NPN

    Abstract: MARK 5D SOT sot-23 Marking 3D Kst5089
    Text: KST5088/5089 KST5088/5089 Low Noise Transistor 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO Parameter Value Units : KST5088 : KST5089 35 30 V V : KST5088


    Original     		PDF KST5088/5089 OT-23 KST5088 KST5089 MARKING 5D NPN MARK 5D SOT sot-23 Marking 3D

    transistor c32725

    Abstract: c32725 c32740 BC327 C327 C32740 NPN transistor C32725 NPN transistor C32740 PNp transistor c32716 c32725 transistor transistor c32740
    Text: BC807; BC807W; BC327 45 V, 500 mA PNP general-purpose transistors Rev. 05 — 21 February 2005 Product data sheet 1. Product profile 1.1 General description PNP general-purpose transistors. Table 1: Product overview Type number Package NPN complement Philips


    Original     		PDF BC807; BC807W; BC327 BC807 BC817 BC807W OT323 SC-70 BC817W transistor c32725 c32725 c32740 BC327 C327 C32740 NPN transistor C32725 NPN transistor C32740 PNp transistor c32716 c32725 transistor transistor c32740

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . DSC7102 Silicon NPN epitaxial planar type For low frequency amplification DSC8102 in MiniP3 type package • Features  Package  Low collector-emitter saturation voltage VCE(sat)  Contributes to miniaturization of sets, reduction of component count.


    Original     		PDF 2002/95/EC) DSC7102 DSC8102 DSC7102

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A 2SC5090 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC509 0 V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • Low Noise Figure, High Gain. • N F = l.ld B , |S 2 1 el2= 13dB f=lG H z MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC


    OCR Scan     		PDF 2SC5090 2SC509

    Untitled

    Abstract: No abstract text available
    Text: 2SC3123 TO SHIBA 2 S C312 3 TOSHIBA TRANSISTOR TV VHF M IXER APPLICATIONS • • SILICON NPN EPITAXIAL PLANAR TYPE Unit in mm + 0.5 2.5-0.3 High Conversion Gain : Gce = 23dB Typ. Low Reverse Transfer Capacitance : Cre = 0.4pF (Typ.) + 0.25 .1 .5 -0 .1 5 .


    OCR Scan     		PDF 2SC3123

    2N3904S

    Abstract: 2N3906S 2N3904S SOT-23 2N3906S SOT-23 1n9161 1N916
    Text: KEC KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA 2N3904S EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES DIM A B C D E G H J K L M N P • Low Leakage Current ; IcEx=50nA M ax. , lBL=50nA(Max.) @Vce=30V, Veb=3V.


    OCR Scan     		PDF 2N3904S 2N3906S. C0MM01N 2N3904S 2N3906S 2N3904S SOT-23 2N3906S SOT-23 1n9161 1N916

    Untitled

    Abstract: No abstract text available
    Text: T O S H IB A 2SC3138 TOSHIBA TRANSISTOR 2 SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS S C 3 1 3 8 Unit in mm HIGH VOLTAGE SWITCHING APPLICATIONS TTicrVi Vnlfncrp 1-0.5 -0.3 2.5 • V n T in = -9.00V ( IVT!n V1 - ~ ' \- + 1 5 - 0 . 15 . VCEO = 200V (Min.)


    OCR Scan     		PDF 2SC3138 2SA1255

    Untitled

    Abstract: No abstract text available
    Text: T O S H IB A 2SC2982 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC2982 U nit in mm STOROBO FLASH APPLICATIONS M EDIUM PO W ER AM PLIFIER APPLICATIONS 1.6MAX —J— 1.7MAX. • High DC Current Gain and Excellent hjnE Linearity 0.4 ±0.05


    OCR Scan     		PDF 2SC2982

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SC2716 TOSHIBA TRANSISTOR i SILICON NPN EPITAXIAL TYPE PCT PROCESS <;r i 7 1 fi U nit in mm HIGH FREQUENCY AM PLIFIER APPLICATIONS. AM HIGH FREQUENCY AM PLIFIER APPLICATIONS. + 0.5 3 .5 - Q 3 AM FREQUENCY CONVERTER APPLICATIOS. + 0.25 i.5-ai 5 f—


    OCR Scan     		PDF 2SC2716