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    MARKING 24 DIODE Search Results

    MARKING 24 DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    MARKING 24 DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: DIODES INC PRODUCT CHANGE NOTICE Contact Date: Implementation Date: Alert Category: 6/24/02 6/24/02 Discrete Semiconductor DCS/PCN-1011 Alert Type: PCN #: Specification Change, Marking Change, Assembly Site & Test Site PCN #:2002-1011 TITLE Specification Change, Marking Change MMBT3904


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    PDF DCS/PCN-1011 MMBT3904 com/datasheets/ds30036 QP502-1 QP502-1

    Untitled

    Abstract: No abstract text available
    Text: PRODUCT CHANGE NOTICE Contact Date: Implementation Date: Alert Category: Alert Type: July 24, 2006 August 1, 2006 Discrete Semiconductor Marking Change DCS/PCN-1046 PCN #: PCN #: 1046 TITLE Improved Marking IMPACT NONE DESCRIPTION OF CHANGE Upgrade part marking to Laser marking from ink markings


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    PDF DCS/PCN-1046 SBL1640 SBL1640CT SBL1640CT-02 SBL1645 SBL1650 SBL1650CT SBL1660 SBL1660CT SBL2030CT

    AP1531

    Abstract: AH276K-PL-B AP13933WA AP131-18YA AH175WL-7 T77Z102.13 AP1117C AP1117CE33G-13 AP2191ASG-13 transistor+smd+zG+13
    Text: INFORMATIONAL PRODUCT CHANGE NOTICE Initial Final DCS/ICN-1140 Contact Date: Implementation Date: Alert Category: Alert Type: PCN #: July 24, 2009 Immediate Analog Semiconductors Marking Change ICN #: 1140 TITLE Date Code Marking Update IMPACT Change in device marking format. Improved product traceability.


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    PDF DCS/ICN-1140 40W6G-7 APX825A-44W6G-7 APX825A-46W6G-7 ATS137-PL-A ATS137-PL-A-A ATS137-PLA-B ATS137-PL-A-B ATS137-PL-B ATS137-PL-B-A AP1531 AH276K-PL-B AP13933WA AP131-18YA AH175WL-7 T77Z102.13 AP1117C AP1117CE33G-13 AP2191ASG-13 transistor+smd+zG+13

    ERD03

    Abstract: marking 30A GENERAL marking 30A general purpose diode marking code -08
    Text: ERD03 3.0A (200V to 400V / 3.0A ) Outline drawings, mm GENERAL USE RECTIFIER DIODE ø 7.5 ø 1.8 10 24 MIN. 24 MIN. Features Marking Compact size, light weight High reliability Color code : White Applications Voltage class ERD03 -02 Cathode mark General purpose rectifier applications


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    PDF ERD03 ERD03 marking 30A GENERAL marking 30A general purpose diode marking code -08

    Untitled

    Abstract: No abstract text available
    Text: ERD03 3.0A (200V to 400V / 3.0A ) Outline drawings, mm GENERAL USE RECTIFIER DIODE ø 7.5 ø 1.8 10 24 MIN. 24 MIN. Features Marking Compact size, light weight High reliability Color code : White Applications Voltage class ERD03 -02 Cathode mark General purpose rectifier applications


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    PDF ERD03 ERD03 ig-04

    ERD03

    Abstract: No abstract text available
    Text: ERD03 3.0A (200V to 400V / 3.0A ) Outline drawings, mm GENERAL USE RECTIFIER DIODE ø 7.5 ø 1.8 10 24 MIN. 24 MIN. Features Marking Compact size, light weight High reliability Color code : White Applications Voltage class ERD03 -02 Cathode mark General purpose rectifier applications


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    PDF ERD03 ERD03

    S1 DIODE

    Abstract: Marking B23 Q62702-B20-S1 Q62702-B21-S1 Q62702-B22-S1 Q62702-B23-S2 marking 27 diode top marking S1
    Text: Silicon Tuning Varactors ● Abrupt junction tuning diode ● Tuning range 120 V BBY 24 … BBY 27 Type Marking Ordering Code BBY 24-S1 Q62702-B20-S1 BBY 25-S1 Q62702-B21-S1 BBY 26-S1 Q62702-B22-S1 BBY 27-S2 Q62702-B23-S2 Pin Configuration Package1 P


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    PDF 24-S1 Q62702-B20-S1 25-S1 Q62702-B22-S1 27-S2 Q62702-B21-S1 26-S1 Q62702-B23-S2 CT120 S1 DIODE Marking B23 Q62702-B20-S1 Q62702-B21-S1 Q62702-B22-S1 Q62702-B23-S2 marking 27 diode top marking S1

    Untitled

    Abstract: No abstract text available
    Text: MMBD1201 / 1202 / 1203 / 1204 / 1205 Small Signal Diodes Connection Diagram 1201 3 1202 3 3 3 24 1 2 1 1203 3 SOT-23 1 Symbol 2 3 1204 1 2 2 1205 3 1 Absolute Maximum Ratings* 1NC 2 MARKING MMBD1201 24 MMBD1202 25 MMBD1203 26 MMBD1204 27 MMBD1205 28 1 2NC


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    PDF MMBD1201 OT-23 MMBD1202 MMBD1203 MMBD1204 MMBD1205

    Diode Marking 1p SOT-23

    Abstract: transistor 1201 1203 1205 MMBD1201 MMBD1203 MMBD1204A MMBD1205A diode e 1205
    Text: MMBD1201 / 1203 / 1204 / 1205 CONNECTION DIAGRAMS 3 3 3 1201 3 1203 24 2 NC 1 1 2 SOT-23 2 MARKING MMBD1201 24 MMBD1204A 27 MMBD1203 26 MMBD1205A 28 1 1 2 3 3 1204 1 1205 2 1 2 High Conductance Ultra Fast Diode Sourced from Process 1P. Absolute Maximum Ratings*


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    PDF MMBD1201 OT-23 MMBD1204A MMBD1203 MMBD1205A Diode Marking 1p SOT-23 transistor 1201 1203 1205 diode e 1205

    MMBD1201

    Abstract: MMBD1202 MMBD1203 MMBD1204 MMBD1205
    Text: MMBD1201 / 1202 / 1203 / 1204 / 1205 Small Signal Diodes Connection Diagram 1201 3 3 1202 3 3 24 1 2 1 1203 3 SOT-23 1 Symbol 2 3 1204 1 2 2 1205 3 1 Absolute Maximum Ratings* 1NC 2 MARKING MMBD1201 24 MMBD1202 25 MMBD1203 26 MMBD1204 27 MMBD1205 28 1 2NC


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    PDF MMBD1201 OT-23 MMBD1202 MMBD1203 MMBD1204 MMBD1205

    transistor 1201 1203 1205

    Abstract: MMBD1201 MMBD1203 MMBD1204 MMBD1205 mmbd1200
    Text: Connection Diagrams 1201 3 3 24 1 1204 3 2 1 2 3 3 1203 2NC 1 2 3 1205 1 2 1 MARKING MMBD1201 24 MMBD1203 26 MMBD1204 27 MMBD1205 28 SOT-23 1 2 Small Signal Diodes Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units VRRM


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    PDF MMBD1201 MMBD1203 MMBD1204 MMBD1205 OT-23 transistor 1201 1203 1205 mmbd1200

    Untitled

    Abstract: No abstract text available
    Text: 767-5401 2 16 Digital Input/Output Module, 24 VDC / 0.2 A, High Speed 4 inputs/outputs 4 x M12 4DIO HS Module marking System bus output (3) AUTOMATION System bus input (3) 3 LED indicators X 4 2 X 3 Digital inputs / outputs (2) 1 X 2 X 1 Channel marking


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    marking P2 sot-23

    Abstract: marking wa sot-23
    Text: CONNECTION DIAGRAMS 3 3 3 1201 3 1203 24 2 NC 1 1 2 SOT-23 2 MARKING MMBD1201 24 MMBD1204 27 MMBD1203 26 MMBD1205 28 1 1 2 3 3 1204 1 1205 2 1 2 High Conductance Ultra Fast Diode Sourced from Process 1P. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


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    PDF MMBD1201 OT-23 MMBD1204 MMBD1203 MMBD1205 marking P2 sot-23 marking wa sot-23

    transistor 1201 1203 1205

    Abstract: MMBD1201 MMBD1203 MMBD1204A MMBD1205A wA MARKING SOT-23 SERIES DIODE marking P2 sot-23 fairchild s sot-23 Device Marking
    Text: CONNECTION DIAGRAMS 3 3 1201 3 1203 24 3 2 NC 1 1 2 SOT-23 2 MARKING MMBD1201 24 MMBD1204A 27 MMBD1203 26 MMBD1205A 28 1 1 2 3 3 1204 1 2 1 1205 2 High Conductance Ultra Fast Diode Sourced from Process 1P. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


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    PDF OT-23 MMBD1201 MMBD1204A MMBD1203 MMBD1205A transistor 1201 1203 1205 wA MARKING SOT-23 SERIES DIODE marking P2 sot-23 fairchild s sot-23 Device Marking

    Untitled

    Abstract: No abstract text available
    Text: 767-4808 2 14 Digital Output Module, 24 VDC, 0.1 A, High Speed 8 outputs 4 x M12, two outputs per connector 8DO HS Module marking System bus output (3) AUTOMATION System bus input (3) 6 LED indicators X 4 4 X 3 7 X 2 X 1 3 1 24 V ULS UA Supply input (1)


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    KDZ10EV

    Abstract: KDZ10V KDZ11EV KDZ12EV KDZ13EV KDZ15EV KDZ16EV KDZ18EV KDZ20EV KDZ22EV
    Text: Surface Mount Zener Diodes 100mW 150mW 2A 2B 2C 2D 30 33 36 39 43 47 51 56 62 68 75 82 91 10 11 12 13 15 16 18 20 22 24 200mW 2A 2B 2C 2D 30 33 36 39 43 47 51 56 62 68 75 82 91 10 11 12 13 15 16 18 20 22 24 Marking Code Part No. BZX384-C2V4 BZX384-C2V7 BZX384-C3V0


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    PDF 100mW 150mW 200mW KDZ10EV KDZ10V KDZ11EV KDZ12EV KDZ13EV KDZ15EV KDZ16EV KDZ18EV KDZ20EV KDZ22EV

    Untitled

    Abstract: No abstract text available
    Text: SMD Zener Diodes - 6W 6.0 W Marking Code Part No. Z6W27M 20070515 - Norminal Zener Voltage @ IZT Nom. VZ V Min. VZ(V) Max. VZ(V) 27 24 30 Test Current Max. Zener Impedance (Ω) IZT(mA) ZZT @ lZT ZZK@ lZK lZK (mA) 10 30 - - Maximum Reverse Leakage Current Package


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    PDF Z6W27M

    DA36103E

    Abstract: da361
    Text: DA36103E Tentative Total pages page DA36103E Silicon epitaxial planar type For high speed switching Marking Symbol : 24 Package Code : ML3-N4-B Absolute Maximum Ratings Ta = 25 °C Parameter Reverse voltage Maximum peak reverse voltage Forward current Peak forward current


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    PDF DA36103E DA36103E da361

    JBW15-3R5

    Abstract: TDK noise FILTER 250v 10a A122 B3P5 DIODE 240v 3a EN55022-B JBW05-3R0 JBW12-0R9 JBW15-0R7 JBW24-1R3
    Text: A122_JBW 1/24 TDK Switching Power Supply Wide input, compact and device-embedded type J SERIES JBW UL/CSA, EN60950 approved and Electric Appliances And Material Control Law compliant, CE marking product (3-year warranty period) [FEATURES] • Compact and low price.


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    PDF EN60950 JBW15-3R5 TDK noise FILTER 250v 10a A122 B3P5 DIODE 240v 3a EN55022-B JBW05-3R0 JBW12-0R9 JBW15-0R7 JBW24-1R3

    Untitled

    Abstract: No abstract text available
    Text: SMD Zener Diodes - 5W 5.0 W Part No. Z5W27M Z5W37M 20070515 Norminal Zener Voltage @ IZT Marking Nom. Code VZ V - 27 37 Min. VZ(V) Max. VZ(V) 24 34 30 40 Test Current Max. Zener Impedance (Ω) IZT(mA) ZZT @ lZT ZZK@ lZK lZK (mA) 10 10 30 30 - - Maximum Reverse


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    PDF Z5W27M Z5W37M

    107 hall effect sensor

    Abstract: 115c hall 115E HAL115 HAL115UA-E IEC68-2-20 HALL Sensor TO92UA open drain in hall effect sensor
    Text: MICRONAS INTERMETALL HAL115 Hall Effect Sensor IC MICRONAS Edition May 7, 1997 6251-414-1DS HAL115 Hall Effect Sensor IC in CMOS technology Marking Code Type Temperature Range Features: E C – operates from 4.3 to 24 V supply voltage with reverse voltage protection


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    PDF HAL115 6251-414-1DS 115UA 107 hall effect sensor 115c hall 115E HAL115 HAL115UA-E IEC68-2-20 HALL Sensor TO92UA open drain in hall effect sensor

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR tm MMBD1201 /1203 /1204 /1205 □ 0 MARKING MMBD1201 24 M M B D 1204A M M BD 1203 26 M M B D 1205A High Conductance Ultra Fast Diode Sourced from Process 1P. Absolute Maximum RatitlQS TA = 25°C unless otherwise noted Parameter Symbol Value Units


    OCR Scan
    PDF MMBD1201

    siemens 27 s1 diode

    Abstract: Marking B23 BBY24 Q62702-B20-S1 Q62702-B22-S1 Q62702-B23-S2 T120 Q62702-B21 3SB05
    Text: SIEM EN S Silicon Tuning Varactors BBY24 . BBY 27 • Abrupt junction tuning diode • Tuning range 120 V Type Marking Ordering Code BBY 24-S1 - Q62702-B20-S1 BBY 25-S1 Q62702-B21 -S1 BBY 26-S1 Q62702-B22-S1 BBY 27-S2 Q62702-B23-S2 Pin Configuration Package1


    OCR Scan
    PDF 24-S1 Q62702-B20-S1 25-S1 Q62702-B21 EHA07001 26-S1 Q62702-B22-S1 27-S2 Q62702-B23-S2 B235bOS siemens 27 s1 diode Marking B23 BBY24 Q62702-B20-S1 Q62702-B22-S1 Q62702-B23-S2 T120 3SB05

    itt ol 170

    Abstract: No abstract text available
    Text: HAL114 ADVANCE INFORMATION Hall Effect Sensor 1C in CMOS technology Marking Code Type Tern perature Rimge Features: A - operates from 4.5 V to 24 V supply voltage HAL114S HAL114UA - overvoltage and reverse-voltage protection 114A 114E 114C - short-circuit protected open-drain output switch


    OCR Scan
    PDF HAL114 HAL114S HAL114UA 4bfiZ711 itt ol 170