C456A
Abstract: FDLL456 FDLL456A FDLL457 FDLL457A FDLL458 FDLL458A FAIRCHILD FDLL
Text: 1N/FDLL 456/A / 457/A / 458/A / 459/A 1N/FDLL 456/A - 1N/FDLL 459/A COLOR BAND MARKING DEVICE FDLL456 FDLL456A FDLL457 FDLL457A FDLL458 FDLL458A FDLL459 FDLL459A LL-34 DO-35 THE PLACEMENT OF THE EXPANSION GAP HAS NO RELATIONSHIP TO THE LOCATION OF THE CATHODE TERMINAL
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456/A
457/A
458/A
459/A
LL-34
DO-35
FDLL456
FDLL456A
C456A
FDLL456
FDLL456A
FDLL457
FDLL457A
FDLL458
FDLL458A
FAIRCHILD FDLL
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Darlington Amplifier Transistors z Pb-Free Package is Available. LMBTA13LT1G LMBTA14LT1G ORDERING INFORMATION Device Marking Shipping LMBTA13LT1G 1M LMBTA14LT1G LMBTA13LT3G 1N 3000/Tape & Reel 3000/Tape & Reel 1M LMBTA14LT3G 1N 10000/Tape & Reel
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LMBTA13LT1G
LMBTA14LT1G
LMBTA13LT3G
3000/Tape
LMBTA14LT3G
10000/Tape
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transistor c 458
Abstract: 1N 457 equivalent RED Color band DIODES 65 diode 1N FDLL456 FDLL456A FDLL457 FDLL457A FDLL458 FDLL458A
Text: 1N/FDLL 456/A / 457/A / 458/A / 459/A Discrete POWER & Signal Technologies N 1N/FDLL 456/A - 1N/FDLL 459/A COLOR BAND MARKING DEVICE LL-34 THE PLACEMENT OF THE EXPANSION GAP HAS NO RELATIONSHIP TO THE LOCATION OF THE CATHODE TERMINAL DO-35 1ST BAND 2ND BAND
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456/A
457/A
458/A
459/A
LL-34
DO-35
FDLL456
FDLL456A
transistor c 458
1N 457 equivalent
RED Color band DIODES
65 diode 1N
FDLL456
FDLL456A
FDLL457
FDLL457A
FDLL458
FDLL458A
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diode st 4148
Abstract: ST 4148 diode 4148 FDLL4148 FDLL4448 FDLL914 FDLL914A FDLL914B FDLL916 FDLL916A
Text: 1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 Discrete POWER & Signal Technologies N 1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 COLOR BAND MARKING DEVICE LL-34 THE PLACEMENT OF THE EXPANSION GAP HAS NO RELATIONSHIP TO THE LOCATION OF THE CATHODE TERMINAL DO-35 FDLL914
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914/A/B
916/A/B
LL-34
DO-35
FDLL914
FDLL914A
FDLL914B
FDLL916
diode st 4148
ST 4148
diode 4148
FDLL4148
FDLL4448
FDLL914
FDLL914A
FDLL914B
FDLL916
FDLL916A
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diode do35 C 4148
Abstract: diode 4448 FAIRCHILD DIODE diode f 4148 1n914b fairchild 914
Text: 1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 Small Signal Diode LL-34 DO-35 THE PLACEMENT OF THE EXPANSION GAP HAS NO RELATIONSHIP TO THE LOCATION OF THE CATHODE TERMINAL Cathode is denoted with a black band LL-34 COLOR BAND MARKING DEVICE 1ST BAND 2ND BAND FDLL914
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914/A/B
916/A/B
LL-34
FDLL914
FDLL914A
FDLL914B
FDLL916
FDLL916A
diode do35 C 4148
diode 4448
FAIRCHILD DIODE
diode f 4148
1n914b
fairchild 914
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LL-34
Abstract: diode 914a DC COMPONENTS 4148
Text: 1N/FDLL 914A/B / 916/A/B / 4148 / 4448 Small Signal Diode LL-34 COLOR BAND MARKING DEVICE FDLL914 FDLL914A FDLL914B FDLL4148 FDLL4448 LL-34 DO-35 THE PLACEMENT OF THE EXPANSION GAP HAS NO RELATIONSHIP TO THE LOCATION OF THE CATHODE TERMINAL Cathode is denoted with a black band
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14A/B
916/A/B
LL-34
FDLL914
FDLL914A
FDLL914B
FDLL4148
FDLL4448
diode 914a
DC COMPONENTS 4148
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diode 4148
Abstract: 4148 diode diode do35 C 4148 B916 FDLL4148 FDLL914 FDLL914A FDLL914B FDLL916 FDLL916A
Text: 1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 Small Signal Diode LL-34 DO-35 THE PLACEMENT OF THE EXPANSION GAP HAS NO RELATIONSHIP TO THE LOCATION OF THE CATHODE TERMINAL Cathode is denoted with a black band LL-34 COLOR BAND MARKING DEVICE 1ST BAND 2ND BAND FDLL914
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914/A/B
916/A/B
LL-34
DO-35
LL-34
FDLL914
FDLL914A
FDLL914B
FDLL916
FDLL916A
diode 4148
4148 diode
diode do35 C 4148
B916
FDLL4148
FDLL914
FDLL914A
FDLL914B
FDLL916
FDLL916A
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diode f 4148
Abstract: 914 or 4148 diode diode 4148 diode t 4148 diode 4448 4148 1n 4148 diode B9-16 Zener+Diode+ph+4148 FDLL914A
Text: 1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 Small Signal Diode LL-34 DO-35 THE PLACEMENT OF THE EXPANSION GAP HAS NO RELATIONSHIP TO THE LOCATION OF THE CATHODE TERMINAL Cathode is denoted with a black band LL-34 COLOR BAND MARKING DEVICE 1ST BAND 2ND BAND FDLL914
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914/A/B
916/A/B
LL-34
DO-35
LL-34
FDLL914
FDLL914A
FDLL914B
FDLL916
FDLL916A
diode f 4148
914 or 4148 diode
diode 4148
diode t 4148
diode 4448
4148
1n 4148 diode
B9-16
Zener+Diode+ph+4148
FDLL914A
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MINI-MELF DIODE green CATHODE
Abstract: DC COMPONENTS 4148
Text: 1N/FDLL 914A/B / 916/A/B / 4148 / 4448 Small Signal Diode Cathode Band LL-34 COLOR BAND MARKING DEVICE SOD80 LL-34 DO-35 THE PLACEMENT OF THE EXPANSION GAP HAS NO RELATIONSHIP TO THE LOCATION OF THE CATHODE TERMINAL Cathode is denoted with a black band 1ST BAND
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14A/B
916/A/B
LL-34
FDLL914
FDLL914A
FDLL914B
FDLL4148
FDLL4448
MINI-MELF DIODE green CATHODE
DC COMPONENTS 4148
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diode st 4148
Abstract: ST 4148 diode 4148 diode t 4148 4148 st working of 1N 4148 914 DIODE 914 or 4148 diode 914/A/B FDLL4148
Text: 1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 COLOR BAND MARKING DEVICE LL-34 DO-35 THE PLACEMENT OF THE EXPANSION GAP HAS NO RELATIONSHIP TO THE LOCATION OF THE CATHODE TERMINAL FDLL914 FDLL914A FDLL914B FDLL916 FDLL916A FDLL916B FDLL4148 FDLL4448 1ST BAND 2ND BAND
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914/A/B
916/A/B
LL-34
DO-35
FDLL914
FDLL914A
FDLL914B
FDLL916
FDLL916A
FDLL916B
diode st 4148
ST 4148
diode 4148
diode t 4148
4148 st
working of 1N 4148
914 DIODE
914 or 4148 diode
FDLL4148
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DIODE 1N4004G
Abstract: 1N4005G 1N4006G 1N4001G 1N4007G 4002G 4005G 4006G 1N4007G-TB diode 1N4007G
Text: 1N4001G – 1N4007G WTE POWER SEMICONDUCTORS Pb 1.0A GLASS PASSIVATED STANDARD DIODE Features ! Glass Passivated Die Construction ! ! ! ! Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability A B A Mechanical Data
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1N4001G
1N4007G
DO-41,
MIL-STD-202,
DO-41
DIODE 1N4004G
1N4005G
1N4006G
1N4001G
1N4007G
4002G
4005G
4006G
1N4007G-TB
diode 1N4007G
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diode t 4148
Abstract: TI 4148 FDLL916B 914/A/B FDLL4448 FDLL914 FDLL914A FDLL914B FDLL916 FDLL916A
Text: 1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 Discrete POWER & Signal Technologies National Semiconductor" 1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 COLOR BAND MARKING DEVICE F D L L 91 4 F D LL914A FD LL914B F D L L 91 6 F D LL916A FD LL916B FD LL4148 FD LL4448 1ST BAND
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914/A/B
916/A/B
FDLL914
FDLL914A
FDLL914B
FDLL916
FDLL916A
FDLL916B
FDLL4148
FDLL4448
diode t 4148
TI 4148
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Untitled
Abstract: No abstract text available
Text: 1N/FDLL 456/A / 457/A / 458/A / 459/A Discrete POWER & Signal Technologies N at ion al Semiconductor 1N/FDLL 456/A -1 N/FDLL 459/A COLOR BAND MARKING DEVICE FD LL456 FD LL456A FD LL457 FD LL457A FD LL458 FD LL458A FD LL459 FD LL459A LL-34 THE PLACEMENT OF THE EXPANSION GAP
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OCR Scan
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PDF
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456/A
457/A
458/A
459/A
LL-34
DO-35
LL456
LL456A
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1N4448R
Abstract: No abstract text available
Text: 1N4148 1N914 1N 916 1N4150 1N4153 1N4448 1N4606 These diodes are in a glass sealed envelope and are suitable for lead mounting on printed circuit boards. Features • Dimensions Units : mm CATHODE BAND ¿0.5±0.1 V available in DO-35 package c • part marking, see following table
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1N4148
1N914
1N4150
1N4153
1N4448
1N4606
DO-35
1N4148R
1N4448R
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diode t 4148
Abstract: diode LN 4148 t 4148 diode diode f 4148 914 or 4148 diode 1N91G T 4148 1n 4148 diode FDLL4148
Text: Semiconductor' 1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 CO LO R BAND MARKING DEVICE FOLL914 FDLL914A FDLL914B FDLL916 FDLL916A FDLL916B FDLL4148 FDLL4448 L L -3 4 THE PLACEMENT OF THE EXPANSION GAP HAS NO RELATIONSHIP TO THE LOCATION OF THE CATHODE TERMINAL
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914/A/B
916/A/B
FOLL914
FDLL914A
FDLL914B
FDLL916
FDLL916A
FDLL916B
FDLL4148
FDLL4448
diode t 4148
diode LN 4148
t 4148 diode
diode f 4148
914 or 4148 diode
1N91G
T 4148
1n 4148 diode
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR tm 1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 CO LO R BAND MARKING DEVICE FDLL914 FDLL914A FDLL914B FDLL916 FDLL916A FDLL916B FDLL4148 FDLL4448 1ST BA N D 2ND BAND BLACK BLACK BROWN BLACK BLACK BROWN BLACK BROWN BROWN G RAY BLACK RED WHITE BROWN
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OCR Scan
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PDF
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914/A/B
916/A/B
FDLL914
FDLL914A
FDLL914B
FDLL916
FDLL916A
FDLL916B
FDLL4148
FDLL4448
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diode pj 916
Abstract: IC la 4148
Text: A I R C H I L D is c re te PO W E R & S ig n a l Technologies D SEMICONDUCTOR tm 1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 CO LO R BAND MARKING DEVICE LL-34 DO-35 THE PLACEMENT OF THE EXPANSION GAP HAS NO RELATIONSHIP TO THE LOCATION OF THE CATHODE TERMINAL
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OCR Scan
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PDF
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914/A/B
916/A/B
FDLL914
FDLL914A
FDLL914B
FDLL916
FDLL916A
FDLL916B
diode pj 916
IC la 4148
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diode t 4148
Abstract: 914/A/B FDLL4148 FDLL914 FDLL914A FDLL914B FDLL916 FDLL916A FDLL916B 1n916b
Text: SEMICONDUCTOR tm 1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 COLOR BAND MARKING DEVICE F D LL914 F D LL914A FD LL914B F D L L 91 6 F D LL916A FD LL916B F D L L 4 1 48 F D L L 44 48 1ST BAND 2ND BAND B LACK B LACK BROWN B LACK BLACK BROW N BLACK BROW N BROW N GRAY
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OCR Scan
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PDF
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914/A/B
916/A/B
DO-35
LL-34
FDLL914
FDLL914A
FDLL914B
FDLL916
FDLL916A
FDLL916B
diode t 4148
FDLL4148
1n916b
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BD1501
Abstract: No abstract text available
Text: •r r m D e v ic e M in 2S0 m 1S0 n A M ax Vfm @ k ( V o lte ) M ax (m A ) Wr Vrrm (n s ) (Vatts) P ackage* ill V RHM ( V o lts ) Diodes Silicon Single Junction Diodes D e v ic e M in M ax 150 VW @ !f (V o lte ) Max Vr (IK ) (m A ) P ackage* M ax 1 IN 4 8 6 B
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1S922
BAS20
BAX16
H300A
O-236AB
r0-236
LL-34
O-236
DO-35
BD1501
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1N4148 SOD-80
Abstract: 1N SERIES DIODE SMD diode C5C smd diode A82 DIODE smd marking MO smd diode j SMD diode CA2 L21 SMD DIODE 914 SMD diode Ca6
Text: SMD Switching Diodes TYPE MO. CASE DESCRIPTION BAS28 BAS56 CLL914 CLL2003 CLL4150 CLL4448 CLL5001 C M PD 914 CMPD1001 CMPD1001A SOT-143 SOT-143 SOD-80 SOD-00 SOD-BO SOD- 80 SOD-BO SOT-23 SOT-23 SOT-23 CMPD1001S CMP02003 CMPD2004 CMPD2004S SOT-23 SOT-23 SOT-23
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BAS28
BAS56
CLL914
CLL2003
CLL4150
CLL4448
CLL5001
CMPD914
CMPD1001
CMPD1001A
1N4148 SOD-80
1N SERIES DIODE
SMD diode C5C
smd diode A82
DIODE smd marking MO
smd diode j
SMD diode CA2
L21 SMD
DIODE 914
SMD diode Ca6
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diode 4483
Abstract: RZ2h marking E 1n diode marking 1n diode zener 4474 1N4471
Text: 1N4460 thru 1N4496 and 1N6485 thru 1N6491 Microsemi Corp. The diode experts SCOTTSDALE, /1Z ☆JANS* 1.5 WATT GLASS ZENER DIODES FEATURES • • • • • • • • Microminiature package. High performance characteristics. Stable operation at temperatures to 200°C .
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OCR Scan
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1N4460
1N4496
1N6485
1N6491
1N6491
diode 4483
RZ2h
marking E 1n diode
marking 1n diode
zener 4474
1N4471
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1N4770
Abstract: No abstract text available
Text: SGS-THOMSON [*[M&egïï[FMD gS 1N 4765, A-> 1N 4774,A TEMPERATURE COMPENSATED ZENER DIODES N E W S E R IE • SEMICONDUCTOR M ATERIAL : SILICON ■ TECHNO LO G Y : LOCAL EPITAXY + GUARD RING / " DO 35 (Glass A B S O LU TE R A T IN G S (limiting values) Symbol
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OCR Scan
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diode 4483
Abstract: 1N4471
Text: 1 N 4 4 6 0 thru 1N4496 and N 6 4 8 5 thru ^ 1 Micmemi Corp. / J SANTA ANA, CA For more information call: 714 979-8220 The diode experts SCOTTSDALE, AZ ☆JANS* 1.5 WATT GLASS ZENER DIODES FE A T U R E S • • • • • • • • M ic ro m in iatu re p ack age.
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OCR Scan
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1N4496
N6491
diode 4483
1N4471
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IN3155
Abstract: IN3157 BL-5B IN3154 1n3156 1N3154 015G 12123 N3157 3155
Text: SbE ]> • 7 ^ 2 3 7 0041532 «S6TH s 6 S-TH4MS0N SCS-THOMSON !QJOT@«S 171 T- , h ° ^ 1N 3154,A-> 1N 3157,A TEMPERATURE COMPENSATED ZENER DIODES ■ SEMICONDUCTOR MATERIAL : SILICON . TECHNOLOGY : LOCAL EPITAXY + GUARD RING ABSOLUTE RATINGS limiting values
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