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    PD45128163

    Abstract: uPD45128163G5-A75-9JF-E
    Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD45128163-E 128M-bit Synchronous DRAM 4-bank, LVTTL Description The µPD45128163 is high-speed 134,217,728-bit synchronous dynamic random-access memory, organized as 2,097,152 x 16 × 4 word × bit × bank . The synchronous DRAM achieved high-speed data transfer using the pipeline architecture.


    Original     		PDF PD45128163-E 128M-bit PD45128163 728-bit 54-pin M01E0107 uPD45128163G5-A75-9JF-E

    DDR2-400

    Abstract: DDR2-533 DDR2-667 EBE20RE4ABFA EBE20RE4ABFA-4A-E EBE20RE4ABFA-5C-E EBE20RE4ABFA-6E-E CS 3820
    Text: PRELIMINARY DATA SHEET 2GB Registered DDR2 SDRAM DIMM EBE20RE4ABFA 256M words x 72 bits, 1 Rank Specifications Features • Density: 2GB • Organization  256M words × 72 bits, 1 rank • Mounting 18 pieces of 1G bits DDR2 SDRAM sealed in FBGA • Package: 240-pin socket type dual in line memory


    Original     		PDF EBE20RE4ABFA 240-pin 667Mbps/533Mbps/400Mbps cycles/64ms M01E0107 E0873E30 DDR2-400 DDR2-533 DDR2-667 EBE20RE4ABFA EBE20RE4ABFA-4A-E EBE20RE4ABFA-5C-E EBE20RE4ABFA-6E-E CS 3820

    EBD52UD6ADSA-6B

    Abstract: DDR266A DDR266B DDR333B EBD52UD6ADSA EBD52UD6ADSA-7A EBD52UD6ADSA-7B EDD5116ADTA-6B
    Text: DATA SHEET 512MB DDR SDRAM SO-DIMM EBD52UD6ADSA 64M words x 64 bits, 2 Ranks Description Features The EBD52UD6ADSA is 64M words × 64 bits, 2 ranks Double Data Rate (DDR) SDRAM Small Outline Dual In-line Memory Module, mounting 8 pieces of 512M bits DDR SDRAM sealed in TSOP package. Read and


    Original     		PDF 512MB EBD52UD6ADSA EBD52UD6ADSA M01E0107 E0425E30 EBD52UD6ADSA-6B DDR266A DDR266B DDR333B EBD52UD6ADSA-7A EBD52UD6ADSA-7B EDD5116ADTA-6B

    EBE10AD4AGFA-6E-E

    Abstract: DDR2-400 DDR2-533 DDR2-667 EBE10AD4AGFA EBE10AD4AGFA-4A-E EBE10AD4AGFA-5C-E E0865E11
    Text: PRELIMINARY DATA SHEET 1GB Registered DDR2 SDRAM DIMM EBE10AD4AGFA 128M words x 72 bits, 1 Rank Specifications Features • Density: 1GB • Organization  128M words × 72 bits, 1 rank • Mounting 18 pieces of 512M bits DDR2 SDRAM sealed in FBGA • Package: 240-pin socket type dual in line memory


    Original     		PDF EBE10AD4AGFA 240-pin 667Mbps/533Mbps/400Mbps cycles/64ms M01E0107 E0865E11 EBE10AD4AGFA-6E-E DDR2-400 DDR2-533 DDR2-667 EBE10AD4AGFA EBE10AD4AGFA-4A-E EBE10AD4AGFA-5C-E E0865E11

    DDR266A

    Abstract: DDR266B DDR333B EBD52UC8AKDA EBD52UC8AKDA-6B EBD52UC8AKDA-7A EBD52UC8AKDA-7B
    Text: PRELIMINARY DATA SHEET 512MB DDR SDRAM SO DIMM EBD52UC8AKDA 64M words x 64 bits, 2 Ranks Description Features The EBD52UC8AKDA is 64M words × 64 bits, 2 ranks Double Data Rate (DDR) SDRAM Small Outline Dual In-line Memory Module, mounting 16 pieces of 256M


    Original     		PDF 512MB EBD52UC8AKDA EBD52UC8AKDA M01E0107 E0367E20 DDR266A DDR266B DDR333B EBD52UC8AKDA-6B EBD52UC8AKDA-7A EBD52UC8AKDA-7B

    EDD2516AETA-5B-E

    Abstract: DDR333 DDR400 EDD2516AETA EDD2516AETA-5C-E EDD2516AETA-6B-E EDD2516AETA-7A-E
    Text: PRELIMINARY DATA SHEET 256M bits DDR SDRAM EDD2516AETA 16M words x 16 bits Specifications Features • Density: 256M bits • Organization  4M words × 16 bits × 4 banks • Package: 66-pin plastic TSOP (II)  Lead-free (RoHS compliant) • Power supply:


    Original     		PDF EDD2516AETA 66-pin DDR400: DDR333, 400Mbps/333Mbps/266Mbps cycles/64ms M01E0107 E0859E20 EDD2516AETA-5B-E DDR333 DDR400 EDD2516AETA EDD2516AETA-5C-E EDD2516AETA-6B-E EDD2516AETA-7A-E

    E014

    Abstract: upd4564163g5a10b
    Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD4564441, 4564841, 4564163 64M-bit Synchronous DRAM 4-bank, LVTTL Description The µPD4564441, 4564841, 4564163 are high-speed 67,108,864-bit synchronous dynamic random-access memories, organized as 4,194,304 x 4 × 4, 2,097,152 × 8 × 4, 1,048,576 ×16 × 4 word × bit × bank , respectively.


    Original     		PDF PD4564441, 64M-bit 864-bit 54-pin M01E0107 E014 upd4564163g5a10b

    MC-4R64FKE8S

    Abstract: PD488588 PD488588FF
    Text: DATA SHEET Direct Rambus DRAM SO-RIMMTM Module MC-4R64FKE8S 32M words x 18 bits Description Features The Direct Rambus SO-RIMM module is a generalpurpose high-performance memory module subsystem suitable for use in a broad range of applications including computer memory, mobile personal


    Original     		PDF MC-4R64FKE8S M01E0107 E0140N30 MC-4R64FKE8S PD488588 PD488588FF

    Direct-Rambus-RIMM

    Abstract: MC-4R128FKE6D PD488588 PD488588FF
    Text: DATA SHEET MOS INTEGRATED CIRCUIT MC-4R128FKE6D Direct Rambus DRAM RIMMTM Module 128M-BYTE 64M-WORD x 16-BIT Description The Direct Rambus RIMM module is a general-purpose high-performance memory module subsystem suitable for use in a broad range of applications including computer memory, personal computers, workstations, and other


    Original     		PDF MC-4R128FKE6D 128M-BYTE 64M-WORD 16-BIT) MC-4R128FKE6D PD488588) 600MHz, 711MHz 800MHz M01E0107 Direct-Rambus-RIMM PD488588 PD488588FF

    DDR2-400

    Abstract: DDR2-533 EBE25RC8AAFA-4C-E EBE25RC8AAFA-5C-E
    Text: PRELIMINARY DATA SHEET 256MB Registered DDR2 SDRAM DIMM EBE25RC8AAFA 32M words x 72 bits, 1 Rank Description Features The EBE25RC8AAFA is a 32M words × 72 bits, 1 rank DDR2 SDRAM Module, mounting 9 pieces of DDR2 SDRAM sealed in FBGA (µBGA) package. Read and


    Original     		PDF 256MB EBE25RC8AAFA EBE25RC8AAFA M01E0107 E0470E10 DDR2-400 DDR2-533 EBE25RC8AAFA-4C-E EBE25RC8AAFA-5C-E

    DDR2-533

    Abstract: EBE10RD4ABFA-4A-E EBE10RD4ABFA-4C-E EBE10RD4ABFA-5C-E DDR2-400
    Text: PRELIMINARY DATA SHEET 1GB Registered DDR2 SDRAM DIMM EBE10RD4ABFA 128M words x 72 bits, 1 Rank Description Features The EBE10RD4ABFA is a 128M words × 72 bits, 1 rank DDR2 SDRAM Module, mounting 18 pieces of DDR2 SDRAM sealed in FBGA (µBGA) package.


    Original     		PDF EBE10RD4ABFA EBE10RD4ABFA M01E0107 E0366E60 DDR2-533 EBE10RD4ABFA-4A-E EBE10RD4ABFA-4C-E EBE10RD4ABFA-5C-E DDR2-400

    DDR266A

    Abstract: DDR266B DDR333B EBD11UD8ADDA-6B EBD11UD8ADDA-7A EBD11UD8ADDA-7B E043-1
    Text: DATA SHEET 1GB DDR SDRAM SO-DIMM EBD11UD8ADDA 128M words x 64 bits, 2 Ranks Description Features The EBD11UD8ADDA is 128M words × 64 bits, 2 ranks Double Data Rate (DDR) SDRAM Small Outline Dual In-line Memory Module, mounting 16 pieces of 512M bits DDR SDRAM sealed in TCP package. Read


    Original     		PDF EBD11UD8ADDA EBD11UD8ADDA M01E0107 E0431E20 DDR266A DDR266B DDR333B EBD11UD8ADDA-6B EBD11UD8ADDA-7A EBD11UD8ADDA-7B E043-1

    EDS1616AGTA

    Abstract: EDS1616AGTA-6B-E EDS1616AGTA-75-E
    Text: DATA SHEET 16M bits SDRAM EDS1616AGTA 1M words x 16 bits Description Pin Configurations The EDS1616AGTA is 16M bits SDRAM organized as 524,288 words × 16 bits × 2 banks. All inputs and outputs are synchronized with the positive edge of the clock. It is packaged in 50-pin plastic TSOP (II).


    Original     		PDF EDS1616AGTA EDS1616AGTA 50-pin 166MHz/133MHz M01E0107 E0504E30 EDS1616AGTA-6B-E EDS1616AGTA-75-E

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET 256M bits DDR SDRAM WTR Wide Temperature Range EDD2516AKTA-TI (16M words x 16 bits) EDD2516AKTA-LI (16M words × 16 bits) Description Pin Configurations The EDD2516AK is a 256M bits Double Data Rate (DDR) SDRAM organized as 4,194,304 words × 16 bits


    Original     		PDF EDD2516AKTA-TI EDD2516AKTA-LI EDD2516AK 66-pin M01E0107 E0435E20

    DDR400B

    Abstract: EBD11UD8ADFB-5B EBD11UD8ADFB-5C elpida DLL circuit
    Text: DATA SHEET 1GB Unbuffered DDR SDRAM DIMM EBD11UD8ADFB-5 128M words x 64 bits, 2 Ranks Description Features The EBD11UD8ADFB is 128M words × 64 bits, 2 ranks Double Data Rate (DDR) SDRAM unbuffered module, mounting 16 pieces of 512M bits DDR SDRAM sealed


    Original     		PDF EBD11UD8ADFB-5 EBD11UD8ADFB M01E0107 E0403E30 DDR400B EBD11UD8ADFB-5B EBD11UD8ADFB-5C elpida DLL circuit

    DDR2-533

    Abstract: EBE20RE4AAFA-4A-E EBE20RE4AAFA-5C-E DDR2-400
    Text: PRELIMINARY DATA SHEET 2GB Registered DDR2 SDRAM DIMM EBE20RE4AAFA 256M words x 72 bits, 1 Rank Description Features The EBE20RE4AAFA is a 256M words × 72 bits, 1 rank DDR2 SDRAM Module, mounting 18 pieces of DDR2 SDRAM sealed in FBGA (µBGA) package.


    Original     		PDF EBE20RE4AAFA EBE20RE4AAFA M01E0107 E0440E20 DDR2-533 EBE20RE4AAFA-4A-E EBE20RE4AAFA-5C-E DDR2-400

    EDE1104AASE

    Abstract: EDE1104AASE-4A-E EDE1104AASE-5C-E EDE1104AASE-6C-E EDE1108AASE
    Text: PRELIMINARY DATA SHEET 1G bits DDR2 SDRAM EDE1104AASE 256M words x 4 bits EDE1108AASE (128M words × 8 bits) Description Features The EDE1104AA is a 1G bits DDR2 SDRAM organized as 33,554,432 words × 4 bits × 8 banks. The EDE1108AA is a 1G bits DDR2 SDRAM organized


    Original     		PDF EDE1104AASE EDE1108AASE EDE1104AA EDE1108AA 68-ball M01E0107 E0404E10 EDE1104AASE EDE1104AASE-4A-E EDE1104AASE-5C-E EDE1104AASE-6C-E EDE1108AASE

    DDR2-400

    Abstract: DDR2-533 EBE51UD8ABFA EBE51UD8ABFA-4A EDE5108ABSE
    Text: PRELIMINARY DATA SHEET 512MB Unbuffered DDR2 SDRAM DIMM EBE51UD8ABFA 64M words x 64 bits, 1 Rank Description Features The EBE51UD8ABFA is 64M words × 64 bits, 1 rank DDR2 SDRAM unbuffered module, mounting 8 pieces of 512M bits DDR2 SDRAM sealed in FBGA (µBGA)


    Original     		PDF 512MB EBE51UD8ABFA EBE51UD8ABFA M01E0107 E0357E10 DDR2-400 DDR2-533 EBE51UD8ABFA-4A EDE5108ABSE

    DDR2-400

    Abstract: DDR2-533 EBE11ED8AEFA-4A-E EBE11ED8AEFA-5C-E
    Text: PRELIMINARY DATA SHEET 1GB Unbuffered DDR2 SDRAM DIMM EBE11ED8AEFA 128M words x 72 bits, 2 Ranks Description Features The EBE11ED8AEFA is 128M words × 72 bits, 2 ranks DDR2 SDRAM unbuffered module, mounting 18 pieces of 512M bits DDR2 SDRAM sealed in FBGA (µBGA)


    Original     		PDF EBE11ED8AEFA EBE11ED8AEFA M01E0107 E0587E10 DDR2-400 DDR2-533 EBE11ED8AEFA-4A-E EBE11ED8AEFA-5C-E

    DDR400B

    Abstract: EBD52UC8AKFA-5B-E EBD52UC8AKFA-5C-E EBD52UC8AKFA-5-E EDD2508AKTA-5B-E
    Text: PRELIMINARY DATA SHEET 512MB Unbuffered DDR SDRAM DIMM EBD52UC8AKFA-5-E 64M words x 64 bits, 2 Ranks Description Features The EBD52UC8AKFA is 64M words × 64 bits, 2 ranks Double Data Rate (DDR) SDRAM unbuffered module, mounting 16 pieces of 256M bits DDR SDRAM sealed


    Original     		PDF 512MB EBD52UC8AKFA-5-E EBD52UC8AKFA M01E0107 E0601E10 DDR400B EBD52UC8AKFA-5B-E EBD52UC8AKFA-5C-E EBD52UC8AKFA-5-E EDD2508AKTA-5B-E

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT MC-4R128FKE8D Direct Rambus DRAM RIMMTM Module 128M-BYTE 64M-WORD x 18-BIT Description The Direct Rambus RIMM module is a general-purpose high-performance memory module subsystem suitable for use in a broad range of applications including computer memory, personal computers, workstations, and other


    Original     		PDF MC-4R128FKE8D 128M-BYTE 64M-WORD 18-BIT) MC-4R128FKE8D PD488588) 600MHz, 711MHz 800MHz M01E0107

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET 512M bits DDR SDRAM EDD5104AB 128M words x 4 bits EDD5108AB (64M words × 8 bits) Description Pin Configurations The EDD5104AB is a 512M bits Double Data Rate (DDR) SDRAM organized as 33,554,432 words × 4 bits × 4 banks. The EDD5108AB is a 512M bits DDR


    Original     		PDF EDD5104AB EDD5108AB EDD5104AB EDD5108AB M01E0107 E0237E10

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET 512MB 32-bit Direct Rambus DRAM RIMM  Module MC-4R512FKK8K 128M words x 18 bits × 2 channels Description Features The 32-bit Direct Rambus RIMM module is a generalpurpose high-performance lines of memory modules suitable for use in a broad range of applications


    Original     		PDF 512MB 32-bit MC-4R512FKK8K 800MHz 925mm M01E0107 E0254N10

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET Direct Rambus DRAM SO-RIMMTM Module MC-4R64FKE8S-840 32M words x 18 bits Description Features The Direct Rambus SO-RIMM module is a generalpurpose high-performance memory module subsystem suitable for use in a broad range of applications including computer memory, mobile personal


    Original     		PDF MC-4R64FKE8S-840 M01E0107 E0259N10