MA723PC
Abstract: ma723hm A723C IC 723 voltage regulator applications UA723DM MA723C uA723 A723 voltage regulator IC 723 MA723
Text: UÄ723 PRECISION VOLTAGE REGULATOR FAIRCHILD LINEAR INTEGRATED CIRCUITS G E N E R A L D ESCRIPTIO N — The jjA 723 is a monolithic Voltage Regulator constructed using the Fairchild Planar* epitaxial process. The device consists of a temperature compensated reference
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uA723
MA723PC
ma723hm
A723C
IC 723 voltage regulator applications
UA723DM
MA723C
A723
voltage regulator IC 723
MA723
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022d
Abstract: LT 723 ic AD 8723
Text: PRAVIMS HADE W THIRD AW6LE PROJECTION MIS DRAUIMJ IS UNPUBLISHED. ftEVtSICIWS B REF' REV PER AD-5D34 REV PER AD-5754 REV PER AD-5117 REV PER AD-6150 REV PER AD 6550 REV PER 0 0 1 0 -0 3 0 3 -9 5 REV PER 0 4 1 0 - 0 3 0 5 - 9 ? -2-01 A [ .1 1 1 ] ^ EIE] 76
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AD-5D34
AD-5754
AD-5117
AD-6150
00/07/SI
6/12/B1
ip270
p270l
022d
LT 723 ic
AD 8723
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Untitled
Abstract: No abstract text available
Text: J> m 4TE flfl35t.^5 OOGB?^ Ô27 TLIT FEATURES • 0 .4 IN C H 1 0 .1 6 m m D IG IT H E IG H T . • C O N T IN U O U S U N IF O R M S E G M E N T S . • C H O IC E O F S IX B R IG H T C O L O R S -R E D /B R IG H T R E D /G R E E N /Y E L L O W /O R A N G E /H IG H E F F I
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flfl35t.
OOQ3777
LTS-4900AHR
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9202c
Abstract: TA9202C RCA*9202A
Text: HA RR IS S E N I C O N D S E CT OR SbE D RCA9202A, RCA9ZUZB, HUAWU»; 4 3 D 2 S7 1 0 0 4 0 ^ 1 1 TIM « H A S File Number 1414 4-Ampere N-P-N Darlington Power Transistors TERMINAL DESIGNATIONS 300, 350 and 400 Volts, 65 Watts, Gain of 750 at 2A Features • Direct 1C input without predriver
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RCA9202A,
O-220AB
-220AB
TA9202A,
TA9202B
TA9202C,
92C9-35S2I
92C8-JSMO
92CS-99922
9202c
TA9202C
RCA*9202A
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A723PC
Abstract: IC 723 voltage regulator OF IC 723 voltage regulator voltage regulator IC 723 Volt regulator 723 10 Pin OF IC 723 linear regulator IC 723 voltage regulator applications OF IC 723 14 pin dip ua723pc MA723HC
Text: juA723 DffiÜ^lDIL Voltage Regulator FEATURES GENERAL DESCRIPTION e The 723 is a voltage regulator designed prim arily fo r series re gulato r applications. By itself, it w ill supply ou tput cur rents up to 120 mA, but external transistors can be added to
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10X10
Abstract: 10X38 22x40 13X2S 2U 34 7k 471
Text: CD11 H i Middle and high voltage for general purpose (CD11H Series) • $ 8 1 5 . Middle and high voltage, standard size. Used in energy-saving electronic ballasts, switching power aupply, etc. • Specifications IK g Ism 54 r; Charactorstcs R T I S H S E Sire and lb tolerance
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10X13
10X10
10X16
10X30
13X20
10X38
22x40
13X2S
2U 34
7k 471
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rm 6203
Abstract: CRE 6203 RK 6204 ST L 6203 LP-621
Text: TLP620 D4 series TLP62 1 (D4) s e r ie s TLP750(D4)series |T L P6 2 0 (0 4 J) A T T A C H M E N T : S P E C IF IC A T IO N S F O R V D E 0884 O P T IO N : (D4) T y p es : T L P 6 21, T L P 6 2 1 -2 , T L P 621-3, T L P 621-4 T L P 6 20, T L P 6 2 0 -2 , T L P 620-3, T L P 620-4
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TLP620
TLP62
TLP750
LP621
rm 6203
CRE 6203
RK 6204
ST L 6203
LP-621
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Untitled
Abstract: No abstract text available
Text: SN54F158A, SN74F158A QUADRUPLE 2-LINE TO 1-LINE DATA SELECTORS/MULTIPLEXERS SDFS054A- D2932, MARCH 1987 - REVISED OCTOBER 1993 Buffered Inputs and Outputs Package Options Include Plastic Small-Outline Packages, Ceramic Chip Carriers, and Standard Plastic and Ceramic
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SN54F158A,
SN74F158A
SDFS054A-
D2932,
300-mil
54F158A
F158A
SN54F158A
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voltage regulator IC 723
Abstract: MJE13006 6221 ic IC 723 voltage regulator applications
Text: MJE13006 NPN POWER TRANSISTORS 300 VOLTS 8 AMP, 80 WATTS Designed for switching regulator, DC-DC converter, AC-DC inverter, high voltage, high speed switching applications. COLLECTOR Features: • v CEO sus = 300V (Min). • VCEV = 600V blocking capability
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MJE13006
t0-220ab
voltage regulator IC 723
MJE13006
6221 ic
IC 723 voltage regulator applications
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Untitled
Abstract: No abstract text available
Text: SSiSS/Resistors m m & a :p p PP f t • m m m & • * * * A • # 5 fp n0 • 2j m i 2|Ibhp • jjx z a s MCR x — E"> X lino i a t t - p & W £ r f f l * L T 1 /'-5 8!nnn T ' t o p MCR10 ttz, IK linO x —E > * 5 — $<7 jM 88 If'iL'W t X V£ 4 lino r a x ic g L tir a ,
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MCR25
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LTC-3702
Abstract: LTC3702
Text: TAIWAN LITON LITEM i ELECTRONIC M^E D • SflHSbTS O O O a n b LTC-3000 SERIES bl? M T L I T 0.3" FOUR DIGIT LED CLOCK FREQUENCY DISPLAYS " " F m - iis FEATURES • 0.3 INCH 7.62 mm H E IG H T C H A R A C T E R R ED O R G R E E N CO LO R. • COMMON C ATH O D E, COMMON A N O D E ; D IR E C T ,
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LTC-3000
LTC-3702
LTC3702
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JRC 2100
Abstract: JRC 2100 8 pin 2100 jrc transistor 2S D 716 1136 jrc P 721 g f IC JRC 1226 pc 817 UA 758 pc zo 107
Text: NJG1509F GaAs SPDT SWITCH IC • GENERAL DESCRIPTION NJG1509F is a GaAs SPDT switch IC operating from 100MHz to 3GHz. This Switch features low loss, high isolation and low voltage operation from +2.5V. It is suited for the T/R switch of digital cordless phone.
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NJG1509F
NJG1509F
100MHz
22dBm.
27dBm
22dBm
22dBm
JRC 2100
JRC 2100 8 pin
2100 jrc
transistor 2S D 716
1136 jrc
P 721 g f
IC JRC 1226
pc 817
UA 758 pc
zo 107
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Untitled
Abstract: No abstract text available
Text: T N 06C Çf Supertex me- Low Threshold / p \ N-Channel Enhancement-Mode M à / Vertical DMOS FETs Ordering Information Standard Commercial Devices b v dss/ t Order Number / Package ' d ON) ^G SIth) BVDGs (max) (min) (max) TO-39 TO-92 200V 6n 1.0A 1.6V TN0620N2
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TN0620N2
TN0624N2
TN0620N3
TN0624N3
O-220
TN0620N5
TN0624N5
TN0620ND
TN0624ND
TN06C
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2n6337
Abstract: 2N6334 2N6332 2N6336
Text: TYPES 2N6332 THRU 2N6337 PLANAR SILICON REVERSE-BLOCKING TRIODE THYRISTORS • High Operating Temperatures • High Surge Current Capability • Fast Switching Speeds • Low Forward Voltage Drop TYPES 2N6332 THRU 2N6337 BULLETIN NO. DL-S 7211633, JANUARY
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2N6332
2N6337
0i370
2N6334
2N6336
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Untitled
Abstract: No abstract text available
Text: X T L i n e A LT1460-5 E T E C H N O LO G Y M ic r o p o w e r P re cisio n Series R e fe r e n c e f€ATUA€S DCSCRIPTIOH • ■ ■ ■ ■ ■ ■ ■ ■ The LT 1460-5 is a micropower bandgap reference that combines very high accuracy and low drift with low power
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LT1460-5
10ppm/Â
100mA
US0-STA03
47jiF
LT1460
LT1236
LT1019
LT1027
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Untitled
Abstract: No abstract text available
Text: Revised Mar. 1998 JS9P08-AS 1. RF PERFORMANCE SPECIFICATIONS Ta= 25°C CHARACTERISTICS Output Power at ldB Compression Point Power Gain at ldB Compression Point Drain Current Power Added Efficiency SYMBOL CONDITION MIN. TYP. MAX. UNIT 23.0 24.0 — dBm
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JS9P08-AS
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transistor GY 721
Abstract: transistor JSW LT 723 ic jSw Diode
Text: TOSHIBA MG240V1US41 TO SH IBA GTR M O D ULE SILICON N CHANNEL IGBT M G 2 4 0 V 1 US41 HIGH PO W E R SWITCHING APPLICATIONS M OTO R CONTROL APPLICATIONS • • • • The Electrodes are Isolated from Case. High Input Impedance Enhancement-Mode High Speed
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MG240V1US41
i00000,
transistor GY 721
transistor JSW
LT 723 ic
jSw Diode
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Untitled
Abstract: No abstract text available
Text: T O SH IB A TA8026P TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA8026P FLASHER CONTROLLER The TA8026P is designed as an automotive flasher controller. It can issue a rapied-flashing warning when a lamp failure occurs. It operates accurately in wide ranges of supply voltages
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TA8026P
TA8026P
300mA
706ms
DIP8-P-300-2
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LT 7247
Abstract: No abstract text available
Text: SILICON MONOLITHIC BIPOLAR LINEAR INTEGRATED CIRCUIT TA8008F < ADVANCED INFORMATION > VOLTAGE REGULATOR WITH W AKE UP TIMER The TA8008F is designed for microcomputer systems. It incorporates a highly accurate constant-voltage power supply 5±0.15V, wake up timer which can make low
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TA8008F
TA8008F
TA8083F
600mA
20xCR
T0R7247
LT 7247
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723da
Abstract: SNS512 SN7514L
Text: LINEAR INTEGRATED CIRCUITS TYPES SN5S12, SN5514. SN7512. SN7514 DIFFERENTIAL VIDEO AMPLIFIERS B U L L E T IN N O . D L -S 7 3 1 1496, A U G U S T 1 9 7 1 - R E V IS E D S E P T E M B E R 1973 • 80-MHz Bandwidth • Typical Differential Voltage Amplification of 300
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80-MHz
SN5S12,
SN5514.
SN7512.
SN7514
SN5512
SIM7512
SN7512,
723da
SNS512
SN7514L
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Untitled
Abstract: No abstract text available
Text: bEE J> m bMS7SSS DQBbDSñ E T E « N E C E N E C ELECTRONI CS INC H.PD17P104 4 - B IT S IN G L E - C H IP M IC R O C O N T R O L L E R The /¿PD17P104 is a tiny microcontroller consisting of a 1 K byte ROM, 16-word RAM , and 16 input/output ports. It is a one-time PROM version of the /¿PD17104, whose internal mask ROM is replaced with a one-time
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PD17P104
PD17P104
16-word
PD17104,
PD17P104CS
PD17P104GS,
PD17104
MD34-*
iPD27C256.
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Untitled
Abstract: No abstract text available
Text: S C IE N TIFIC / 4 *1E M IN I-C IR C U ITS ]> • 0001461 flO b fifill T 70 *S C C very low distortion Frequency Mixers " LEVEL 17S Model * +17 dBm LO, up to +14 dBm RF t~74-°9-01 TUF-5H computer-automated performance data typical production unit / for data of other models consult factory
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20dBm
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Untitled
Abstract: No abstract text available
Text: s C B LSSÊT EK CF007-01 Prelim inary Product Inform ation M ay 1988 1 of 2 Dual-Gate GaAs FET Chip Features □ Implanted Active Layer for Uniformity □ High Insertion Gain Useful to 20 GHz □ +16 dBm PldB at 12 GHz □ Ti/Pt/Au Recessed Gates □ Silicon Nitride Passivation
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CF007-01
CF007-01
Q00G70M
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BSX46
Abstract: BSX45 Transistor BSX45-10 Transistor BSX45 BSX47 BSX47-10 IEC134 Z8239 silicon planar epitaxial transistors
Text: B S X 4 5 to 47 _ P H IL IP S INTERNATIO N AL 5bE D 711002b T - * 7 - 2 3 _ OGMEHOb 3 4 e! « P H I N SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in TO-39 metal envelopes with the collector connected to the case. These transistors are intended for general industrial applications.
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BSX45to
711DflSb
BSX45
BSX46
BSX47
BSX45â
BSX45-
BSX46â
BSX46-
BSX47â
Transistor BSX45-10
Transistor BSX45
BSX47
BSX47-10
IEC134
Z8239
silicon planar epitaxial transistors
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