lm 538 n ic
Abstract: No abstract text available
Text: IStanford Microdevices Product Description SHF-0189 Stanford M icrodevices’ SHF-0189 is a high perform ance AIG aAs/G aAs Heterostructure FET housed in a low-cost surface-m ount SO T-89 plastic package. HFET technology im proves breakdown voltage w hile m inim izing Schottky
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SHF-0189
27dBm
150mA.
lm 538 n ic
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fet K 793
Abstract: A/LM 793
Text: Stanford Microdevices SHF-0187 Product Description Stanford M icrodevices’ SHF-0187 is a AIG aAs/G aAs Heterostructure FET housed in a low cost drop-in package. HFET technology improves breakdown voltage for high drain voltage operation. Its low Schottky leakage current
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SHF-0187
SHF-0187
DC-12
SHF-0187-TR1
F-0187-TR2
fet K 793
A/LM 793
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Untitled
Abstract: No abstract text available
Text: Product Description SNA-300 Stanford M icrodevices’ SNA-300 is a GaAs m onolithic broad band am plifier MMIC in die form. This am plifier provides 22dB of gain when biased at 35m A and 4V. External DC decoupling capacitors determ ine low frequency response. The use of an external resistor allow s for bias
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SNA-300
SNA-300
SNA-376,
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Untitled
Abstract: No abstract text available
Text: f¡iS Siati ford M ¡.crudev ices Product Description SHF-0187 Stanford M icrodevices’ SHF-0187 is a AIG aAs/G aAs Heterostructure FET housed in a low cost drop-in package. HFET technology improves breakdown voltage for high drain voltage operation. Its low Schottky leakage current
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SHF-0187
DC-12
SHF-0187
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Untitled
Abstract: No abstract text available
Text: S Stanford Microdevices SHF-0187 Product Description Stanford M icrodevices’ SHF-0187 is a AIG aAs/G aAs Heterostructure FET housed in a low cost drop-in package. HFET technology improves breakdown voltage for high drain voltage operation. Its low Schottky leakage current
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SHF-0187
SHF-0187
DC-12
SHF-0187-TR1
F-0187-TR2
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Untitled
Abstract: No abstract text available
Text: IStanford Microdevices Product Description SHF-0189 Stanford M icrodevices’ SHF-0189 is a high perform ance AIG aAs/G aAs Heterostructure FET housed in a low-cost surface-m ount SO T-89 plastic package. HFET technology im proves breakdown voltage w hile m inim izing Schottky
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SHF-0189
SHF-0189
27dBm
150mA.
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Untitled
Abstract: No abstract text available
Text: RN4911 RN4911 SW IT CH ING , INVERTER CIRCUIT, INTERFACE CIRCUIT U nit in mm A N D DRIVER CIRCUIT APPL ICATIONS. • Including Two Devices in US6 (U ltra Super Mini Type with 6 leads) • With Built-in Bias Resistors • Simplify Circuit Design • Reduce a Quantity of Parts and Manufacturing Process
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RN4911
RN4911)
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lm 538 n ic
Abstract: No abstract text available
Text: [O rd e rin g numb€r: EN3965 _ FC150 P N P /N PN E pitaxial P la n a r Silicon Com posite T ra n sisto r Low-Frequency General-Purpose Amp, Driver Applications F e a tu r e s • Com posite type w ith 2 tra n sisto rs contained in the CP package c u rre n tly in use, im p ro v in g th e
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EN3965
FC150
FC150
1813/2SC4413,
12094TH
3965-l/4
lm 538 n ic
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Untitled
Abstract: No abstract text available
Text: S tati ford M i cru d ev ices Product Description SHF-0189 Stanford M icrodevices’ SH F-0189 is a high perform ance AIG aAs/G aAs H eterostructure FET housed in a low-cost surface-m ount SO T-89 plastic package. HFET technology im proves breakdow n voltage w hile m inim izing Schottky
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F-0189
SHF-0189
27dBm
150mA.
4MP-14
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LM240
Abstract: lm24013 INTEGRATED POWER SEMICONDUCTORS LTD LM1401 IP140A IP7800 IP7800A LM140 LM340 TC3220
Text: INTEGRATED POWER L7 4825898 IN TEG R A TED dT J MàSSa^fl QOdCaib 1 | 82D POWER 00316 D 1 Amp, 3-Terminal Positive Regulators , SEM ICO ND U C TO R S LTD Features Description The IP140A/ LM140/ IP240A/ LM240/ IP340A/ • 1% Tolerance LM340/ IP7800A/ IP7800/ IP7800AC/ IP7800C
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IP140A/
LM140/
IP240A/
LM240/
IP340A/
LM340/
IP7800A/
IP7800/
IP7800AC/
IP7800C
LM240
lm24013
INTEGRATED POWER SEMICONDUCTORS LTD
LM1401
IP140A
IP7800
IP7800A
LM140
LM340
TC3220
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CD4046 equivalent
Abstract: ca3130 replacement ma702 MC1554 CMP-01 CD4046 MCI 1458 LH0002 equivalent UA740 CD4016 equivalent
Text: MANUFACTURER Fairchild Semiconductor Intersil PART NUMBER H A R R IS EQ U IV A LE N T NOTES M A 7 02 HA-2620/2625 /XA709 HA-909/911 B2 ;uA715 HA-2520/2525 B2 juA725 HA-2700/2705 A3 M A727 HA-2900/2905 C2 M A734 HA-2111/2311 C2 M A 7 40 HA-2060/2065 B2 juA741
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MA702
JUA709
uA715
juA725
MA727
MA734
juA741
MA747
JUA748
JUA772
CD4046 equivalent
ca3130 replacement
MC1554
CMP-01
CD4046
MCI 1458
LH0002 equivalent
UA740
CD4016 equivalent
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HA-2650
Abstract: H12-200 MC1554 teledyne philbrick sl 1489a HA-2000 HA-2000A HA-2050A ram 2111 signetics HA-2060A
Text: HARRIS OPERATIONAL AMPLIFIERS Selection Guide for Military Applications -5 5 °C to +125°C PARAM ETER* F.E.T. PREAMP HA-2000 HA-2000A HA-205O HA-909 S/H ?r a m HA-2060A HA-2400 HA-2420 HA-2050A HA-2060 HA-2500 HA-2502 HA-2510 HA-2512 UNITS INPUT C H A R A C TE R IST IC S
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HA-909
HA-205O
HA-2050A
HA-2060
HA-2060A
HA-2500
HA-2502
HA-2510
HA-2512
HA-2000
HA-2650
H12-200
MC1554
teledyne philbrick
sl 1489a
HA-2000A
ram 2111 signetics
HA-2060A
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2SC3501
Abstract: 2SC2731
Text: 2SC3501 NPN SILICON NPN EPITA XIA L + VHF AMPLIFIER VHF TV TUNER MIXER, O SCILLATO R VHF M K'ÜM mm VHF t v * í — 1. •'"<— X •’ B a s e 2. NC 3 . X • 7 ÿ : E m itte r 4 . 3 is ? 9 '• C o lle c to r D im e n sio n s in mm (FPA K) A BSO LU TE MAXIMUM RATINGS ( T a =
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2SC3501
10juAv
2SC2731
2SC2731.
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HA2650
Abstract: K 2645 schematic ma702 MC1554 CD4046 LM 1436 HA-2000 HA-2000A HA-2050A HA-2060
Text: HARRIS OPERATIONAL AMPLIFIERS Selection Guide for Military Applications - 5 5 ° C to + 1 2 5 ° C PARAM ETER* F.E.T. PR EA M P HA-2000 HA-2000A HA-205O HA-909 ?r a m HA-2060A HA-2400 HA-2050A HA-2060 S/H HA-2420 HA-2500 HA-2502 HA-2510 HA-2512 UNITS INPUT C H A R A C T E R IST IC S
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HA-909
HA-205O
HA-2050A
HA-2060
HA-2060A
HA-2500
HA-2502
HA-2510
HA-2512
HA-2000
HA2650
K 2645 schematic
ma702
MC1554
CD4046
LM 1436
HA-2000A
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2SK94
Abstract: No abstract text available
Text: 2SK949-MR FUJI PO W ER M O S-FET N-OHANNEL SILICON POWER MOS-FET F-I SERIES • "eatures ■ Outline Drawings • h igh speed switching • L dw on-resistance • No secondary breakdown • Low driving power • h igh voltage ■Applications • Switching regulators
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2SK949-MR
2SK94
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LM310A
Abstract: LM302A LM110 LM310 LM102H LM310C LM102 LM102F LM110F LM102H/883B
Text: H S H iim LM 102/302 L M 1 10/310 High P erfo rm a n ce V o ltag e F o llo w e rs F EA T U R E S G E N E R A L D ESCRIPTIO N • Low Input Current — 7 to 30 nA Max • H igh Slew Rate — 10 to 30 V//is The L M 102/LM 302and LM 110/LM 310are m onolithic high
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LM102/302
LM110/310
LM110/LM310)
LM102/LM302and
LM110/LM310are
LM110/LM310
LM310A
LM302A
LM110
LM310
LM102H
LM310C
LM102
LM102F
LM110F
LM102H/883B
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LM310A
Abstract: lm1021 LM310 lm310n LM302A LM110 LM302 LM110W LM102 LM102F
Text: DIMmS^ÜL LM110/310 High Performance Voltage Followers G E N E R A L DESC R IPTIO N FEATURES • Low In p u t C u rren t — 7 to 3 0 nA M ax • H ig h Slew Rate — 10 to 3 0 V //is • Wide Bandw idth — 2 0 M H z L M 1 1 0 /L M 3 1 0 • Internal Frequency Compensation
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LM110/310
LM110/LM310)
LM102/LM302and
LM110/LM310are
LM110/LM310
LM310A
lm1021
LM310
lm310n
LM302A
LM110
LM302
LM110W
LM102
LM102F
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AIR FLOW DETECTOR
Abstract: temperature sensor lm 125 RETS135H 50 k thermo pot air flow detector sensor LM33S LM336 application note LM135H-MIL LM308 HEATER, to-92
Text: LM135/LM235/LM335, LM135A/LM235A/LM335A N a t i o n a l S e m i c o n d u c t o r LM 135/LM 235/LM335, LM 135A/LM235A/LM335A Precision Temperature Sensors G eneral Description The LM135 series are precision, easily-calibrated, integrat ed circuit temperature sensors. Operating as a 2-terminal
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LM135/LM235/LM335,
LM135A/LM235A/LM335A
LM135
TL/H/5698â
TL/H/5698-16
b501124
AIR FLOW DETECTOR
temperature sensor lm 125
RETS135H
50 k thermo pot
air flow detector sensor
LM33S
LM336 application note
LM135H-MIL
LM308
HEATER, to-92
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Untitled
Abstract: No abstract text available
Text: £Z7 SCS-THOMSON Ä 7# *MILiera !0 S M54HC194 M74HC194 4 BIT PIPO SHIFT REGISTER • HIGH SPEED tPD = 12 ns TYP.) AT Vcc = 5 V ■ LOW POWER DISSIPATION Ice = 4 nA (MAX.) AT Ta = 25 °C ■ OUTPUT DRIVE CAPABILITY 1 0 LSTTLLOADS ■ SYMMETRICAL OUTPUT IMPEDANCE
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M54HC194
M74HC194
54/74LS194
M54/74HC194is
005473b
M54/M74HC194
GDSH737
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a358
Abstract: No abstract text available
Text: 7 ^ 2 3 7 Q D 23130 3 • SGS-THOMSON lm i58,a-lm 258,a Eji KLUfgTTtHìODìOOOS LM358,A-LM2904-NE532 S 6 S-TH0M S0N 30E » LOW POWER DUAL OPERATIONAL AMPLIFIERS ■ INTERNALLY FREQUENCY COMPENSATED. ■ LARGE DC VOLTAGE GAIN : 100 dB ■ W ID E BANDW IDTH unity gain : 1.1 MHz (tem
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LM358
-LM2904-NE532
T-79-70
a358
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IC LM 258
Abstract: No abstract text available
Text: r = ± 7 Z S G S - T H O M S O N # M Q (M [iy i ïï[M O (D S l m i 5 8 , a - l m 2 5 8 , a L M 3 5 8 ,A -L M 2 9 0 4 -N E 5 3 2 LOW POWER DUAL OPERATIONAL AMPLIFIERS . INTERNALLY FREQUENCY COMPENSATED. • LARGE DC VOLTAGE GAIN : 100 dB ■ W IDE BANDWIDTH (unity gain : 1.1 MHz (tem
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UE532
-2904-N
IC LM 258
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SOLITRON
Abstract: CD4046 ci 1458 texas HA-2700 MC1554 Exar cross HARRIS / HA1 ma702 Signetics 2650 HA-2005A
Text: HARRIS OPERATIONAL AMPLIFIERS Selection Guide for Commercial/Industrial Applications ÜOC to +75°C PARAM ETER * HA-911 S/H HA-2425 HA-2505 F.E.T. PREAMP PRAM HA-2005 HA-2ÖÖ5A HA-2055 HA-2055A HA-2065 HA-2065A HA-2405 HA-2515 HA-2525 HA-2535 UNITS INPUT C H A R A C TE R IST IC S
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HA-911
HA-20Ã
HA-2005A
HA-2055
HA-2055A
HA-2065
HA-2065A
HA-2405
HA-2425
HA-2505
SOLITRON
CD4046
ci 1458 texas
HA-2700
MC1554
Exar cross
HARRIS / HA1
ma702
Signetics 2650
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LM324 pin configuration
Abstract: LM324J transistor v15 LM124D pin configuration of LM324 lm324 DUAL SUPPLY application LM324N IC LM 324 ic lm324 LM124
Text: LM124/324 Low Power Quad Operational Amplifiers GENERAL DESCRIPTION FEATURES • Internally frequency compensated for unity gain • Large DC voltage gain • Wide bandwidth unity gain (temperature compensated) The LM124 series consists of four independent, high
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LM124/324
100dB
LM124
LM324 pin configuration
LM324J
transistor v15
LM124D
pin configuration of LM324
lm324 DUAL SUPPLY application
LM324N
IC LM 324
ic lm324
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2904N
Abstract: IC LM 358 LM 358 st 2904 lm 358 ic IC LM 258 LM 358 opamp 358a lm 538 n ic lt 2904
Text: g ì SCS-THOMSON lm i 58,a-lm258,a IlLitm «! LM358,A-LM2904-NE532 LOW POWER DUAL OPERATIONAL AMPLIFIERS INTERNALLY FREQUENCY COMPENSATED. LARGE DC VOLTAGE GAIN : 100 dB WIDE BANDWIDTH unity gain : 1.1 MHz (tem perature compensated) VERY LOW SUPPLY CURRENT/AMPLI
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a-lm258
LM358
-LM2904-NE532
-2904-N
2904N
IC LM 358
LM 358
st 2904
lm 358 ic
IC LM 258
LM 358 opamp
358a
lm 538 n ic
lt 2904
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