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    LFPAK56 Price and Stock

    NXP Semiconductors LFPAK5633-KIT

    MOSFET KIT
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    DigiKey LFPAK5633-KIT Bulk
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    Nexperia BUK7K6R8-40E,115

    MOSFETs SOT1205 N CHAN 40V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI BUK7K6R8-40E,115 Reel 57,000 1,500
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    Nexperia BUK6Y24-40PX

    MOSFETs BUK6Y24-40P/SOT669/LFPAK
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    TTI BUK6Y24-40PX Reel 45,000 1,500
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    Nexperia BUK6Y33-60PX

    MOSFETs BUK6Y33-60P/SOT669/LFPAK
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    TTI BUK6Y33-60PX Reel 24,000 1,500
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    Nexperia PHPT610030NKX

    Bipolar Transistors - BJT PHPT610030NK/SOT1205/LFPAK56D
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI PHPT610030NKX Reel 13,500 1,500
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    Find more LFPAK56 price and stock on Findchips.com

    LFPAK56 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: LF PA K 56 PSMN3R0-30YLD N-channel 30 V, 3.0 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology 18 February 2014 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising NXP’s unique “SchottkyPlus” technology delivers


    Original     		PDF PSMN3R0-30YLD LFPAK56 LFPAK56

    MIFARE DESFire

    Abstract: No abstract text available
    Text: BUK9K29-100E Dual N-channel TrenchMOS logic level FET 28 August 2012 Product data sheet 1. Product profile 1.1 General description Dual logic level N-channel MOSFET in a LFPAK56D package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use


    Original     		PDF BUK9K29-100E LFPAK56D MIFARE DESFire

    Untitled

    Abstract: No abstract text available
    Text: LF PA K 56 PSMN1R4-40YLD N-channel 40 V 1.4 mΩ logic level MOSFET in LFPAK56 using NextPower-S3 technology 11 July 2014 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been


    Original     		PDF PSMN1R4-40YLD LFPAK56 LFPAK56

    Untitled

    Abstract: No abstract text available
    Text: PSMN1R0-30YLD N-channel 30 V, 1.0 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology 19 September 2014 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising NXP’s unique “SchottkyPlus” technology delivers


    Original     		PDF PSMN1R0-30YLD LFPAK56 LFPAK56

    Untitled

    Abstract: No abstract text available
    Text: LF PA K 56 PSMN1R2-30YLD N-channel 30 V, 1.2 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology 5 May 2014 Preliminary data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising NXP’s unique “SchottkyPlus” technology delivers


    Original     		PDF PSMN1R2-30YLD LFPAK56 LFPAK56

    Untitled

    Abstract: No abstract text available
    Text: LF PA K 56 PSMN1R0-40YLD N-channel 40 V 1.1 mΩ logic level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology 11 July 2014 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in 150 °C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been


    Original     		PDF PSMN1R0-40YLD LFPAK56 LFPAK56

    Untitled

    Abstract: No abstract text available
    Text: LF PA K 56D BUK9K17-60E Dual N-channel 60 V, 17 mΩ logic level MOSFET 19 March 2014 Product data sheet 1. General description Dual logic level N-channel MOSFET in an LFPAK56D Dual Power-SO8 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101


    Original     		PDF BUK9K17-60E LFPAK56D

    Untitled

    Abstract: No abstract text available
    Text: LF PA K 56 PSMN1R4-40YLD N-channel 40 V 1.4 mΩ logic level MOSFET in LFPAK56 using NextPower-S3 technology 21 August 2014 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been


    Original     		PDF PSMN1R4-40YLD LFPAK56 LFPAK56

    Untitled

    Abstract: No abstract text available
    Text: LF PA K5 6D SOT1205 LFPAK56D; Reel pack, SMD, 7" Q1/T1 Standard product orientation Orderable part number ending, 115 or X Ordering code 12NC ending 115 Rev. 1 — 13 August 2013 Packing information 1. Packing method Printed plano box Barcode label Reel


    Original     		PDF OT1205 LFPAK56D; 001aak603 OT1205

    LFPAK56

    Abstract: No abstract text available
    Text: BUK7K5R1-30E Dual N-channel TrenchMOS standard level FET 23 July 2012 Product data sheet 1. Product profile 1.1 General description Dual standard level N-channel MOSFET in a LFPAK56D package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use


    Original     		PDF BUK7K5R1-30E LFPAK56D LFPAK56

    04180

    Abstract: No abstract text available
    Text: LF PA K 56 PSMN041-80YL N-channel 80 V 41 mΩ logic level MOSFET in LFPAK56 1 May 2013 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode Field-Effect Transistor FET in LFPAK56 package. This product has been designed and qualified for use in a wide range


    Original     		PDF PSMN041-80YL LFPAK56 LFPAK56 04180

    96E840

    Abstract: No abstract text available
    Text: LF PA K 56D BUK9K6R8-40E Dual N-channel 40 V, 7.2 mΩ logic level MOSFET 5 December 2013 Product data sheet 1. General description Dual logic level N-channel MOSFET in an LFPAK56D Dual Power-SO8 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101


    Original     		PDF BUK9K6R8-40E LFPAK56D 96E840

    Untitled

    Abstract: No abstract text available
    Text: LF PA K 56 PSMN3R0-30YLD N-channel 30 V, 3.0 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology 1 October 2013 Objective data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising NXP’s unique “SchottkyPlus” technology delivers


    Original     		PDF PSMN3R0-30YLD LFPAK56 LFPAK56

    Untitled

    Abstract: No abstract text available
    Text: LF PA K 56 PSMN6R0-30YLD N-channel 30 V, 6.0 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology 10 February 2014 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising NXP’s unique “SchottkyPlus” technology delivers


    Original     		PDF PSMN6R0-30YLD LFPAK56 LFPAK56

    Untitled

    Abstract: No abstract text available
    Text: LF PA K 56 PSMN1R0-30YLD N-channel 30 V, 1.0 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology 30 May 2014 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising NXP’s unique “SchottkyPlus” technology delivers


    Original     		PDF PSMN1R0-30YLD LFPAK56 LFPAK56

    Untitled

    Abstract: No abstract text available
    Text: LF PA K 56 BUK7Y12-40E N-channel 40 V, 12 mΩ standard level MOSFET in LFPAK56 9 May 2013 Product data sheet 1. General description Standard level N-channel MOSFET in an LFPAK56 Power SO8 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101


    Original     		PDF BUK7Y12-40E LFPAK56

    Untitled

    Abstract: No abstract text available
    Text: LF PA K 56 BUK7Y21-40E N-channel 40 V, 21 mΩ standard level MOSFET in LFPAK56 7 May 2013 Product data sheet 1. General description Standard level N-channel MOSFET in an LFPAK56 Power SO8 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101


    Original     		PDF BUK7Y21-40E LFPAK56

    91840E

    Abstract: S/91840E
    Text: LF PA K 56D BUK9K18-40E Dual N-channel TrenchMOS logic level FET 23 April 2013 Product data sheet 1. General description Dual logic level N-channel MOSFET in a LFPAK56D package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use


    Original     		PDF BUK9K18-40E LFPAK56D 91840E S/91840E

    MOSFET 4604

    Abstract: 4604 mosfet
    Text: LF PA K 56 BUK9Y15-100E N-channel 100 V, 15 mΩ logic level MOSFET in LFPAK56 9 May 2013 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 Power SO8 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use


    Original     		PDF BUK9Y15-100E LFPAK56 MOSFET 4604 4604 mosfet

    BUK9Y65-100E

    Abstract: No abstract text available
    Text: LF PA K 56 BUK9Y65-100E N-channel 100 V, 65 mΩ logic level MOSFET in LFPAK56 9 May 2013 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 Power SO8 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use


    Original     		PDF BUK9Y65-100E LFPAK56 BUK9Y65-100E

    Untitled

    Abstract: No abstract text available
    Text: LF PA K 56D BUK9K52-60E Dual N-channel TrenchMOS logic level FET 23 April 2013 Product data sheet 1. General description Dual logic level N-channel MOSFET in a LFPAK56D package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use


    Original     		PDF BUK9K52-60E LFPAK56D

    Untitled

    Abstract: No abstract text available
    Text: LF PA K 56 BUK9Y12-100E N-channel 100 V, 12 mΩ logic level MOSFET in LFPAK56 9 May 2013 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 Power SO8 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use


    Original     		PDF BUK9Y12-100E LFPAK56

    Untitled

    Abstract: No abstract text available
    Text: LF PA K 56 BUK7Y29-40E N-channel 40 V, 29 mΩ standard level MOSFET in LFPAK56 7 May 2013 Product data sheet 1. General description Standard level N-channel MOSFET in an LFPAK56 Power SO8 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101


    Original     		PDF BUK7Y29-40E LFPAK56

    BUK9Y25-60E

    Abstract: marking 92560E
    Text: LF PA K 56 BUK9Y25-60E N-channel 60 V, 25 mΩ logic level MOSFET in LFPAK56 7 May 2013 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 Power SO8 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use


    Original     		PDF BUK9Y25-60E LFPAK56 BUK9Y25-60E marking 92560E