FDA79N15
Abstract: No abstract text available
Text: TM FDA79N15 150V N-Channel MOSFET Features Description • 79A, 150V, RDS on = 0.03Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 56 nC)
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FDA79N15
FDA79N15
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79a diode
Abstract: 150V n-channel MOSFET D 3410 A FDA79N15
Text: TM FDA79N15 150V N-Channel MOSFET Features Description • 79A, 150V, RDS on = 0.03Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 56 nC)
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FDA79N15
79a diode
150V n-channel MOSFET
D 3410 A
FDA79N15
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connectors
Abstract: smd marking code bk4 Diodo b4 diodo zener a3 1a60 4p diodo DIODO 55 SMD diodo 4514 smd
Text: version 110125 Index | Indice Description Descrizione Family Famiglia Page Pagina For electrovalves, EN175301-803 style A, ISO 4400, former DIN 43650-A , 18 mm spacing, 2p+2G, female, with cable Per elettrovalvole, EN175301-803 stile A, ISO 4400, (ex DIN 43650-B),
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EN175301-803
3650-A)
43650-B)
76A2T
connectors
smd marking code bk4
Diodo b4
diodo zener a3
1a60
4p diodo
DIODO 55 SMD
diodo 4514 smd
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Untitled
Abstract: No abstract text available
Text: Catalog 1307'91 Revised 1D-00 RF Coax Connectors TNC Connectors, 75 Ohm Plugs, Crimp Hex Crimp and 0 Crimp Those c o n n o c to rs have be e n d e s ig n e d for o p tim u m p e rfo rm a n c e a n d have a true 75 o hm im p e d a n c e the c o m o le te le n g th of the c o n
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1D-00
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CD4308A2
Abstract: No abstract text available
Text: O P i i — D 4 3 _ _ A 2 _ F owerex, Inc., 200 Hillls Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 D U 3¡ S C R P O W -R -B L O K M o d u le 25 Amperes/800 Volts Description:
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Amperes/800
CD4308A2
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IC 9141 ES
Abstract: No abstract text available
Text: Catalog 1 3 0 7 5 1 5 Issued 9 -9 9 RF Coax Connectors C ontinued BNC Connectors, 75 Ohm forT3/E3 Applications (Continued) R ig h t A n g le P lu g s , Crimp M 39012/ M ilitary N o . and/or Comm ents Part N o. ps r c— — 413588-8 Nickel rtS~ - Gold Nickel
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RD179
IC 9141 ES
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Untitled
Abstract: No abstract text available
Text: M itsubishi m icrocom puters M16C / 61 Group Description SING LE-CHIP 16-BIT CM OS M ICRO CO M PUTER Description The M16C/61 group of single-chip m icrocom puters are built using the high-perform ance silicon gate CMOS process using a M16C/60 Series CPU core and are packaged in a 100-pin plastic molded QFP.
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16-BIT
M16C/61
M16C/60
100-pin
OFFFF16
CFFFF16
DOOOO16
F7FFF16
F8OOO16
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M37733EHBFP
Abstract: ded 7516
Text: MITSUBISHI MICROCOMPUTERS M37733EHBXXXFP M37733EHBFS MO*0 a«»10 So«'eV P R O M V E R S IO N O F M 3 7 7 3 3 M H B X X X F P DESCRIPTION •S in g le power s u p p ly . 5 V - 10% The M 37733EHBXXXFP is a single-chip m icrocom puter using the
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M37733EHBXXXFP
M37733EHBFS
16-bit
10-bit
M37733EHBFP
ded 7516
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Untitled
Abstract: No abstract text available
Text: SIEMENS SITAC AC Switches B R T11 B R T12 BRT 13 AC switch w ith ou t zero-voltage d e te cto r con sistin g o f two e le ctrica lly insulated lateral pow er ICs w hich integrate a th y ris to r system, a photo d e tector and noise suppression at the o u tput and an IR GaAs diode at the input.
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0884-app
E52744)
BRT11
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1N4570A JANTX
Abstract: IN4569 IN4565 100-C 1N4565 1N4565A 1N4566 1N4566A 1N4574A 1N4584
Text: niCROSEilI CORP SIE D bllSflhS □ □ □ 1 ^ 3 2 S4M 1N4565&A thru 1N4584&A DO-7 SANTA A V.l. CA SC O T T SD 'U F. 17 For mare information ca 602 941-6300 FEA TU RES • 6.4 V ± 5 % Z E N E R V O LTA G E (N O T E 1) • JA N S EQU IVALENT AVA ILA B LE VIA SCO
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1N4565
1N4584&
500//A
1N4565A
1N4574A
MIL-S-19500/452
DO-35
1N4565
-1N4569A
1N4570
1N4570A JANTX
IN4569
IN4565
100-C
1N4566
1N4566A
1N4584
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SITAC AC Switches With Zero Voltage Switch BRT 22
Abstract: No abstract text available
Text: SIEMENS SITAC AC Switches BRT 21 BRT 22 BRT 23 AC switch with zero-voltage d e tector con sistin g o f tw o e le ctrica lly insulated lateral power ICs. These pow er ICs integrate a th yristo r system, a photo detector, noise sup pre ssion and a zero voltage switch at the ou tput and an IR GaAs diod e at the input. Turning on o c c u rs at
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0884-app
E52744)
SITAC AC Switches With Zero Voltage Switch BRT 22
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wg 99a
Abstract: No abstract text available
Text: DRAWING MADE IN THIRD ANGLE PROJECTION T H JS D RA W ING C O PY R IG H T R E SE R V E D . IS 13 AMP U N P U B L ISH E D . BY AMP R E LE A SE D FO R P U B L IC A T IO N IN C O R PO R A T ED , HARR1S S U R G , P A . PR O D U C TS MA Y BE COVERED S V J. 5 .
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AR-2553
AD-4171
0010-06P
114-2502E
-0CT-94
08jJ6i4Ö
amp37013
yiwrM/saC2SQ/degtX722/ai
370l3/u
jnc/uJj24_
wg 99a
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Untitled
Abstract: No abstract text available
Text: Catalog 1307191 Revised 10-00 RF Coax Connectors B N C C o n n e c to r s , 7 5 O h m Hex and 0 Crimp Plugs, Crimp T h e s e c o n n e c t o r s h a v e b e e n d e s ig n e d IT f o r o p t im u m p e r f o r m a n c e a n d h a v e a t r u e 7 5 o h m im p e d a n c e th e c o m p le t e
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET N-CHANNEL GaAs MES FET NE650R479A 0.4 W L, S-BAND POWER GaAs MES FET DESCRIPTION The N E 6 5 0 R 4 7 9 A is a 0.4 W G aA s M ES FET d e sig n e d fo r m iddle po w e r tra n sm itte r ap p lica tio n s for m obile co m m u n ica tio n ha nd set and base statio n system s. It is ca p a b le o f d e live rin g 0 .4 w a tt o f o u tp u t po w e r C W w ith high
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NE650R479A
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LE 79A
Abstract: diode MARKING CODE 917 a915 BAS79D
Text: Silicon Switching Diodes BAS 79A. BAS 79D • Switching applications • High breakdown voltage • Common cathode T yp e Marking BAS 79A BAS79B O rdering code 12 -m m tape Package* BAS79A Q62702 - A914 SOT-223 BAS79B Q62702 - A915 SOT-223 BAS79C BAS79C
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BAS79B
BAS79C
BAS79D
BAS79A
Q62702
LE 79A
diode MARKING CODE 917
a915
BAS79D
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET 3W, L/S-BAND MEDIUM POWER GaAs MESFET OUTLINE DIMENSIONS FEATURES NE6500379A Units in mm LOW COST PLASTIC SURFACE MOUNT PACKAGE PACKAGE OUTLINE 79A HIGH OUTPUT POWER: +35 dBm TYP HIGH LINEAR GAIN: 10 dB TYP HIGH POWER ADDED EFFICIENCY: 50% TYP @
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NE6500379A
NE6500379A
NE6500379A-T1
24-Hour
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET 3W, L/S-BAND MEDIUM POWER GaAs MESFET OUTLINE DIMENSIONS FEATURES NE6500379A Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE PACKAGE OUTLINE 79A • HIGH OUTPUT POWER: +35 dBm TYP • HIGH LINEAR GAIN: 10 dB TYP • HIGH POWER ADDED EFFICIENCY: 50% TYP @
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NE6500379A
NE6500379A
NE6500379A-T1
24-Hour
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NEC k 1760
Abstract: NE6510179A
Text: PRELIMINARY DATA SHEET 1W, L/S-BAND MEDIUM POWER GaAs HJ-FET OUTLINE DIMENSIONS FEATURES NE6510179A Units in mm LOW COST PLASTIC SURFACE MOUNT PACKAGE PACKAGE OUTLINE 79A HIGH OUTPUT POWER: +31.5 dBm TYP @ V d s = 3.5 V, Id s q = 150 mA, f = 850 MHz, Pin = +20 dBm
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NE6510179A
NE6510179A-T1
24-Hour
NEC k 1760
NE6510179A
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Untitled
Abstract: No abstract text available
Text: FUJITSU MICROELECTRONICS 23E D 37417b2 0007=143 b • T -M t-z v iz . F U JIT S U September 1988 Edition 1.0 72K-BIT 8192x9 HIGH SPEED CMOS STATIC RANDOM ACCESS MEMORY WITH AUTOMATIC POWER DOWN The Fujitsu M B 81C 79A -W Is 8 1 9 2 w ords x 9 b its static random access m em ory
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37417b2
72K-BIT
8192x9)
32011S
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54F652
Abstract: 54F652FMQB 5962-E1232 5962-89558013X
Text: REVISIONS LTR DESCRIPTION APPROVED DATE YR-MO-DA REV SHEET REV SHEET REV STATUS OF SHEETS REV SHEET PMICN/A STANDARDIZED MILITARY DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE AMSC N/A 10 PREPARED BY
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5962-E1232
5962-8955801KX
54F652FMQB
5962-8955801LX
54F652SDMQB
5962-89558013X
54F652LMQB
54F652
54F652FMQB
5962-E1232
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GRM40X7R104K025BL
Abstract: IC 14553 PT 1017 T5.5 murata NE6510179A NE6510179A-T1 ma 17393 atc 11
Text: 1W, L/S-BAND MEDIUM POWER GaAs HJ-FET OUTLINE DIMENSIONS FEATURES_ • LOW COST PLASTIC SURFACE MOUNT PACKAGE NE6510179A NCDO lu 1 Units in mm PACKAGE OUTLINE 79A • HIGH OUTPUT POWER: P o u t = + 31.5 dBm T Y P at V ds = 3.5 V, f = 900 MHz
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NE6510179A
24-Hour
GRM40X7R104K025BL
IC 14553
PT 1017
T5.5 murata
NE6510179A
NE6510179A-T1
ma 17393
atc 11
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BEE 7CA
Abstract: 2N1234 2N1234 JAN
Text: Ml L - S -1 9 5 0 0 /17?A E U ” '” r \ E LA e rU U S Z Z _ SUPERSEDING m i f tncr\r\ /i to / r I \ I 7 J U U / 1 / 7 V,t u / iI -» A_ / ANUgU&Ti lI oz TO 1I iV M L “ 0 - s e m i c o n d u c t o r d e v i c e *, t r a n s i s t o r . p n p .
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9500/179A
MiL-S-19500/179
2N1234
BEE 7CA
2N1234
2N1234 JAN
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wiring diagram audio amplifier ic 6283
Abstract: germanium Transistor Shortform Datasheet & Cross References halbleiter index transistor 2N5160 MOTOROLA transistor ITT 2907 1N5159 2N 5574 inverter welder 4 schematic diagrams de ic lg 8838
Text: THC SEMICONDUCTOR DATA LIBRARY SECOND EDITION VOLUME H prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the purchaser of semiconductor
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4L3052
4L3056
wiring diagram audio amplifier ic 6283
germanium
Transistor Shortform Datasheet & Cross References
halbleiter index transistor
2N5160 MOTOROLA
transistor ITT 2907
1N5159
2N 5574
inverter welder 4 schematic
diagrams de ic lg 8838
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Untitled
Abstract: No abstract text available
Text: IDT74LVC1G79A 3.3V CMOS ADVANCE INFORMATION SINGLE POSITIVE-EDGETRIGGERED D-TYPE FLIPFLOP, 5 VOLT TOLERANT I/O DESCRIPTION: FEATURES: - This single positive-edge-triggered D-type flip-flop is built using advanced dual metal CMOS technology. The LVC1G79A is designed for 2.3V to 3.6V V cc operation.
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IDT74LVC1G79A
MIL-STD-883,
200pF,
LVC1G79A
IDT74LVC1G79A.
IDT74ALVC1G04.
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