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    LB 122 NPN Search Results

    LB 122 NPN Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    MX0912B251Y Rochester Electronics LLC MX0912B251Y - NPN Silicon RF Power Transistor (Ampleon Die) Visit Rochester Electronics LLC Buy
    CA3083Z-G Rochester Electronics LLC CA3083 - GENERAL PURPOSE HIGH CURRENT NPN TRANSISTOR ARRAY Visit Rochester Electronics LLC Buy
    CA3046 Rochester Electronics LLC RF Small Signal Bipolar Transistor, 0.05A I(C), 5-Element, Very High Frequency Band, Silicon, NPN, MS-001AA, MS-001AA, 14 PIN Visit Rochester Electronics LLC Buy
    ISL73096EHVF Renesas Electronics Corporation Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays Visit Renesas Electronics Corporation

    LB 122 NPN Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    VK200 rfc

    Abstract: vk200 vk200* FERROXCUBE vk200 rfc with 6 turns NTE320 T72 5VDC NTE320F vk200-20
    Text: NTE320/NTE320F Silicon NPN RF Power Transistor 40W @ 175MHz Description: The NTE320 and NTE320F are silicon NPN power transistors designed for 12.5V VHF large–signal amplifier applications required in commercial and industrial equipment operating to 300MHz.


    Original     		PDF NTE320/NTE320F 175MHz NTE320 NTE320F 300MHz. 175MHz NTE320 NTE320F 1000pF 100pF VK200 rfc vk200 vk200* FERROXCUBE vk200 rfc with 6 turns T72 5VDC vk200-20

    BF 494 C

    Abstract: ic sc 6200 AT-38043-TR1 transistor 2222a data sheet 5-04P SOT c5 87 ZO 607 MA AT-38043-BLK AT-38043-TR2 AT-38043
    Text: NPN Silicon Bipolar Common Emitter Transistor Technical Data AT-38043 Features • Operates Over a Wide Range of Voltages and Frequencies Surface Mount Package SOT-343 SC-70 Outline 4T • +25.0 dBm P1dB and 60% Collector Efficiency @ 900 MHz, 4.8 Volts, Typ.


    Original     		PDF AT-38043 OT-343 SC-70) AT-38043 5966-1275E BF 494 C ic sc 6200 AT-38043-TR1 transistor 2222a data sheet 5-04P SOT c5 87 ZO 607 MA AT-38043-BLK AT-38043-TR2

    ic sc 6200

    Abstract: transistor 2222a data sheet AT-38043 AT-38043-BLK AT-38043-TR1 AT-38043-TR2 at38043blk 38043 sc 6200 ic diagram
    Text: NPN Silicon Bipolar Common Emitter Transistor Technical Data AT-38043 Features • Operates Over a Wide Range of Voltages and Frequencies Surface Mount Package SOT-343 SC-70 Outline 4T • +25.0 dBm P1dB and 60% Collector Efficiency @ 900 MHz, 4.8 Volts, Typ.


    Original     		PDF AT-38043 OT-343 SC-70) AT-38043 5966-1275E ic sc 6200 transistor 2222a data sheet AT-38043-BLK AT-38043-TR1 AT-38043-TR2 at38043blk 38043 sc 6200 ic diagram

    973-120

    Abstract: 2sc3357 marking K "micro x" Micro-X Marking 865 NE AND micro-X NEC C 324 C NEC NE85635 transistor marking 551 sot-89 2SC4226 2SC5006
    Text: NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR NE856 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 7 GHz E B • LOW NOISE FIGURE: 1.1 dB at 1 GHz • HIGH COLLECTOR CURRENT: 100 mA • HIGH RELIABILITY METALLIZATION 35 MICRO-X 00 (CHIP) • LOW COST


    Original     		PDF NE856 NE856 NE85632 NE85633-T1B NE85634-T1 NE85635 NE85639-T1 NE85639R-T1 973-120 2sc3357 marking K "micro x" Micro-X Marking 865 NE AND micro-X NEC C 324 C NEC NE85635 transistor marking 551 sot-89 2SC4226 2SC5006

    LB 122 transistor

    Abstract: LB 122 NPN TRANSISTOR LB 122 NPN LB 121 NPN TRANSISTOR LB 127 transistor tip122 tip120 TIP 122 transistor TIP 122 transistor tip 122
    Text: NPN EPITAXIAL DARLINGTON TRANSISTOR TIPI 20/121/122 MEDIUM POWER LINEAR SWITCHING APPLICATIONS • Complementary to TIP125/126/127 ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Collector-Base Voltage : TIP120 Rating : TIP121 : TIP122 Collector-Emitter Voltag»


    OCR Scan     		PDF TIP125/126/127 TIP120 TIP121 TIP122 TIP121 TIP120/121/122 120ft LB 122 transistor LB 122 NPN TRANSISTOR LB 122 NPN LB 121 NPN TRANSISTOR LB 127 transistor tip120 TIP 122 transistor TIP 122 transistor tip 122

    LB 122 transistor

    Abstract: LB 122 NPN TRANSISTOR
    Text: NPN EPITAXIAL DARLINGTON TRANSISTOR TIP120/121/122 MEDIUM POWER TRANSISTOR SWITCHING APPLICATIONS • C om plem entary to TIP 1 25/126/127 ABSOLUTE MAXIMUM RATINGS C h a ra c te rist: TIP 1 20 C ollector-B ase V oltage : TIP 1 21 : TIP122 C ollector-E m ltter V o lta g ' TIP120


    OCR Scan     		PDF TIP120/121/122 TIP122 TIP120 TIP121 LB 122 transistor LB 122 NPN TRANSISTOR

    LB 122 transistor

    Abstract: LB 122 NPN TRANSISTOR TIP 122 transistor TIP 122 100 V LB 121 NPN TRANSISTOR NPN Transistor VCEO 80V 100V tip120 to-220 npn darlington TRANSISTOR tip122 TIP120 TIP121
    Text: TIP I 20/121/122 NPN EPITAXIAL DARLINGTON TRANSISTOR MEDIUM POWER TRANSISTOR SWITCHING APPLICATIONS • C om plem entary to TIP 1 25/126/127 ABSOLUTE MAXIMUM RATINGS Characterist TIP120 TIP121 C ollector-Base Voltage Sym bol Rating V c bO TIP122 C ollector-E m ltter Voltag


    OCR Scan     		PDF TIP120/121 TIP125/126/127 TIP120 TIP121 TIP122 TIP121 O-220 LB 122 transistor LB 122 NPN TRANSISTOR TIP 122 transistor TIP 122 100 V LB 121 NPN TRANSISTOR NPN Transistor VCEO 80V 100V tip120 to-220 npn darlington TRANSISTOR tip122

    tip127 darlington

    Abstract: TIP127 TIP122 TIP120 TIP121 TIP125 TIP126 tip122 tip127
    Text: SAN YO NPN TIP120 TIP121 TIP122 SEMICONDUCTOR DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS PNP TIP125 TIP126 TIP127 60-80-100 VOLTS, 5 AMPERE HIGH CURRENT GAIN hFE = 2500 typ. @3V, 3A LOW SATURATION VOLTAGE V c e S A T = 1.0V typ. @2.5A MONOLITHIC CONSTRUCTION WITH BUILT-IN


    OCR Scan     		PDF TIP120 TIP125 TIP121 TIP126 TIP122 TIP127 TIP120, TIP125 TIP121, TIP126 tip127 darlington TIP127 tip122 tip127

    LB 122 transistor

    Abstract: LB 122 NPN TRANSISTOR
    Text: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR TIPI 20/121/122 MEDIUM POWER LINEAR SWITCHING APPLICATIONS TO -220 • Complement to TIPI25/126/127 ABSOLUTE MAXIMUM RATINGS Ta = 25°C Characteristic Rating Unit V CBO 60 80 100 V V V V cE O 60 80 100 5 5 8 120


    OCR Scan     		PDF TIPI25/126/127 TIP120 TIP121 TIP122 LB 122 transistor LB 122 NPN TRANSISTOR

    transistor 42t

    Abstract: 2C5339 2C6193 chip die npn transistor
    Text: 5-A PNP Power Transistor Chips 2C6193 FEATURES CHIP TYPE: AL • Epitaxial, Planar Design • Contact Metallization: Base, Emitter - Aluminum - 50,000 A Nominal Collector - Gold - 3,000 A Nominal • Die Thickness - 10 Mils Nominal • Complement to NPN 2C5339


    OCR Scan     		PDF 2C6193 2C5339 350fcS, transistor 42t 2C5339 2C6193 chip die npn transistor

    TIP 122 transistor

    Abstract: transistor tip 122 tip 120 tip 122 transistor darlington TIP-120 IP122 TIP 21 transistor
    Text: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR T IP I 20/121/122 MEDIUM POWER LINEAR SWITCHING APPLICATIONS • C o m p le m e n t lo T IP I 25/126/127 ABSOLUTE MAXIMUM RATINGS i C haracteristic S ym bol C o lle c to r-B a s e V o lta g e : TIP120 R ating 60


    OCR Scan     		PDF TIP120 TIP121 TIP120/121/122 TIP 122 transistor transistor tip 122 tip 120 tip 122 transistor darlington TIP-120 IP122 TIP 21 transistor

    IP122

    Abstract: transistor darlington TIP-120 tip122c TIP120
    Text: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR TIP120/121/122 MEDIUM POWER LINEAR SWITCHING APPLICATIONS • Complement to TIP125/126/127 ABSOLUTE MAXIMUM RATINGS Ta = 25°C Characteristic Symbol C o lle c to r-B a s e V o lta g e : TIP120 : TIP121 : TIP122


    OCR Scan     		PDF TIP120/121/122 TIP125/126/127 TIP120 TIP121 TIP122 IP122 transistor darlington TIP-120 tip122c TIP120

    CJD122

    Abstract: CJD127 transistor C4 016
    Text: Central" C JD 122 NPN C JD 127 PNP Semiconductor Corp. COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CJD122, CJD127 types are Complementary Silicon Power Darlington Transistors manufactured in a surface mount package designed for low


    OCR Scan     		PDF cjd122 cjd127 CJD122, CJD122) CJD127) IHG017M2 transistor C4 016

    Untitled

    Abstract: No abstract text available
    Text: Central" CJD200 NPN CJD210 PNP Sem iconductor Corp. COMPLEMENTARY SILICON POWER TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CJD200, CJD210 types are Complementary Silicon Power Transistors manufactured in a surface mount package designed for high current


    OCR Scan     		PDF CJD200 CJD210 CJD200, CJD210)

    LB 124 transistor

    Abstract: LB 122 transistor
    Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU1706AB GENERAL DESCRIPTION High-voltage, high-speed switching npn transistor in a plastic envelope suitable for surface mounting, intended for use in high frequency electronic lighting ballast applications.


    OCR Scan     		PDF BU1706AB LB 124 transistor LB 122 transistor

    ic Lb 598 d

    Abstract: GS121 ic Lb 598 sgs120
    Text: S G S-THONSON D7E D I 7 ^ ^ 2 3 7 67C 15347 D 001744_S '7"- T 1 g S Î2 Ô S G S 1 2 5 3 SGSIEI SGSÎ26 1 SGS122 S6S127 EPITAXIAL-BASE NPN/PNP T'33 ~3 l POW ER D A R LIN G T O N S The SGS120, SGS121 and SG S122 are silicon epitaxial-base NPN transistors in monolithic


    OCR Scan     		PDF SGS122 S6S127 SGS120, SGS121 OT-82 SGS125, 300fis, DD174M7 SGSt20 SGSI25 ic Lb 598 d GS121 ic Lb 598 sgs120

    LB 122 transistor To-92

    Abstract: LB 122 NPN TRANSISTOR LB 122 transistor KSC815 KSA539 L300 samsung l300 TRANSISTOR A52
    Text: SAMSUNG SEMICONDUCTOR INC KSC815 IME D | 7 cJ b 4 m 2 OODbASl 2 | NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER HIGH FREQUENCY OSCILLATOR TO-92 • Complement to KSA539 • Collector-Base Voltage Vcao=60V ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic


    OCR Scan     		PDF 71b4142 KSC815 KSA539 LB 122 transistor To-92 LB 122 NPN TRANSISTOR LB 122 transistor KSA539 L300 samsung l300 TRANSISTOR A52

    Untitled

    Abstract: No abstract text available
    Text: TIP29 SERIES' - TIP29/29A/29B/29C NPN EXITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR SWITCHING APPLICATIONS T O -2 2 0 • Complementary to TIP30/30A/30B/30C ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Collector-Base Voltage Collector-Emitter Voltage


    OCR Scan     		PDF TIP29 TIP29/29A/29B/29C) TIP30/30A/30B/30C TIP29 TIP29A TIP29B TIP29C

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU1706AX GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in high frequency electronic lighting ballast applications.


    OCR Scan     		PDF BU1706AX

    tip29

    Abstract: 29a transistor
    Text: TIP29 SERIES TIP29/29A/29B/29C NPN EXITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR SWITCHING APPLICATIONS I T O -220 • C omplementary to T IP 3 0/30 A /3 0B /30C ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Collector-Base Voltage Collector-Emitter Voltage


    OCR Scan     		PDF TIP29 TIP29/29A/29B/29C) TIP29A IP29B TIP29C TIP29B 29a transistor

    LB 122 transistor

    Abstract: LB 124 transistor BU1706AX ballast electronic hps ELECTRONIC BALLAST 150 W HPS
    Text: Product specification Philips Semiconductors Silicon diffused power transistor BU1706AX GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in high frequency electronic lighting ballast applications.


    OCR Scan     		PDF BU1706AX OT186A; OT186 LB 122 transistor LB 124 transistor BU1706AX ballast electronic hps ELECTRONIC BALLAST 150 W HPS

    Untitled

    Abstract: No abstract text available
    Text: 30E D • 7 ^ 2 3 7 0030^3^ f Z 7 S G S -T H O M S O N ^ IlL E O g ilià llO ïï^ M O O S S G S-TH0MS0N G ■ ' T ;3 3 " O f? BF457 B F 4 58 -B F 45 9 HIGH VOLTAGE VIDEO AMPLIFIERS DESCRIPTIO N The BF457, BF458 and BF459 are silicon planar epitaxial NPN transistors in Jedec TO-126 plastic


    OCR Scan     		PDF BF457 BF457, BF458 BF459 O-126 T-33-05 F457-B F458-BF459

    2C5339

    Abstract: 2C6193
    Text: P P C PRODUCTS CORP SSE D ta jb lll OOOOÖ'iD T • ! 5-A NPN Power Transistor Chips 2C5339 • T -lV O S t CHIP TYPE: AL FEATURES • Epitaxial, Planar Design • Contact Metallization: Base, Emitter - Aluminum - 50,000 A Nominal Collector ■ Gold - 3,000 A Nominal


    OCR Scan     		PDF 2C5339 2C6193 350ms, 2C6193

    Untitled

    Abstract: No abstract text available
    Text: NPN SILICON PLANAR M EDIUM POWER HIGH GAIN TRANSISTOR ZTX1049A I S S U E 1 - J U N E 1995_ _ _ FEATU RES * V cev = 8 0 V * V e ry lo w saturation v o lta g e s * H ig h G ain * 20 A m p s p u lse current


    OCR Scan     		PDF ZTX1049A D11G27