L8821P Search Results

L8821P Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
L8821P		Polyfet RF Devices	SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR		Original	PDF

L8821P Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
L8821P Abstract: No abstract text available Text: polyfet rf devices L8821P General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.	Original	PDF	L8821P L8821P
TB197 Abstract: L8821P Text: TB197 L8821P Pout vs Pin, Freq=512MHz, Vds=12.5Vdc, Idq=0.2A 4.0 12.25 Linear @ 160mw 12.00 P1dB = 1.9W 3.5 11.75 11.50 3.0 11.25 2.5 Pout 11.00 10.75 2.0 Gain 10.50 10.25 1.5 10.00 1.0 9.75 Efficiency @ 2W=44% 9.50 0.5 9.25 0.0 0.05 0.1 0.15 0.2 0.25 Pin in Watts	Original	PDF	TB197 L8821P 512MHz, 160mw
L8821P Abstract: LK421 Text: Polyfet RF Devices TB-170 L8821P->LK421 Pout vs Pin Freq=30MHz Vds=12.5Vdc Idq=1.2A 24 27.0 Linear @5W 18 26.0 Pout 12 25.0 Gain Efficiency @15W= 35% 6 24.0 23.0 0.02 0.04 Pin in Watts Page 1 0.06 0.08 0.1 Gain in dB Pout in Watts P1dB=14W Polyfet RF Devices	Original	PDF	TB-170 L8821P-- LK421 30MHz 250MHz L8821P
tic 136 Abstract: 10NF 470PF 47UF L8821P 136-174MHz Text: R F in C1 15PF W =1" pcb L = .4 " W =1" pcb L = .4 " C2 470PF C3 10NF R1 15 3 tu rn s L1 22AW G 10K pot L8821P C8 68PF R 3 2 .2 K 7 .5 V z e n e r W =1" L = .4 " pcb 1 2 tu rn s 22awg to ro id 850m u pcb W =1" 2/7/03 C6 10PF 2 tu rn s 22awg C9 10NF L = .4 "	Original	PDF	470PF L8821P 22awg 200PF L8821P 12Vdc 400ma 136-174Mhz tic 136 10NF 470PF 47UF
L8821P Abstract: No abstract text available Text: polyfet rf devices L8821P General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.	Original	PDF	L8821P L8821P
Untitled Abstract: No abstract text available Text: polyfet rf devices L8821P General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.	Original	PDF	L8821P Temperatur8821P
Untitled Abstract: No abstract text available Text: polyfet rf devices L8821P General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.	Original	PDF	L8821P
MGCF21 Abstract: LY942 MOSFET 50 amp 1000 volt Gx4002 5 watt hf mosfet Text: polyfet rf devices LDMOS Flanged Mount Pout Freq Gain theta 28 Volt LDMOS gm Idsat Ciss Crss Coss mho A polyfet rf devices Broad Band RF Power MOSFET LDMOS Transistors Surface Mount Pout Freq Gain theta 12.5 Volt VDMOS S Series gm Idsat Ciss Crss Coss Flanged Mount	Original	PDF	L8821P LB421 L8821P LP721 SM341 LQ821 SQ701 SR401 MGCF21 LY942 MOSFET 50 amp 1000 volt Gx4002 5 watt hf mosfet
rf push pull mosfet power amplifier Abstract: 100 watt hf mosfet 12 volt 150w amplifier RF VHF 139 144 mhz uhf 150w mosfet 150w amplifier RF VHF 139 - 144 mhz LDMOS 15w ldmos l2711 vhf LP801 LK602 LR941 Text: polyfet rf devices Broad Band RF Power MOSFET Transistors TB# 178 179 180 181 182 183D 184 185 186 187 188 189 191 192 193A 194 195 196 197 199 200NUM1 201 202 203 204 205 206 207 208 210 211 212 Freq Range 136-174 30-88 50-88 118-165 100-500 1.5-30 1.5-30	Original	PDF	200NUM1 SQ221 LK822 LK722 LX521 rf push pull mosfet power amplifier 100 watt hf mosfet 12 volt 150w amplifier RF VHF 139 144 mhz uhf 150w mosfet 150w amplifier RF VHF 139 - 144 mhz LDMOS 15w ldmos l2711 vhf LP801 LK602 LR941