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    K 4145 TRANSISTOR Search Results

    K 4145 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    K 4145 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    sc 4145

    Abstract: ic sc 4145 k 4145 fzl 181 threshold switch Q67000-H8437 FZL4145D fzl 125
    Text: FZL 4145 D Quad Driver Incl. Short-Circuit Signaling Bipolar IC Features ● ● ● Short-circuit shutdown with clock generator Four driver circuits for controlling power transistors Overload and short-circuit signaling P-DIP-18-1 Type Ordering Code Package


    Original     		PDF P-DIP-18-1 Q67000-H8437 sc 4145 ic sc 4145 k 4145 fzl 181 threshold switch Q67000-H8437 FZL4145D fzl 125

    ic sc 4145

    Abstract: sc 4145 FZL 4146 FZL 4146 G IEC wiring schematic with overload SMD code V12 SMD transistor package code V12 FZL4145D automatic changeover current limiter FZL 4146 G datasheet
    Text: FZL 4145 D Quad Driver Incl. Short-Circuit Signaling Bipolar IC Features ● ● ● Short-circuit shutdown with clock generator Four driver circuits for controlling power transistors Overload and short-circuit signaling P-DIP-18-1 Type Ordering Code Package


    Original     		PDF P-DIP-18-1 Q67000-H8437 ic sc 4145 sc 4145 FZL 4146 FZL 4146 G IEC wiring schematic with overload SMD code V12 SMD transistor package code V12 FZL4145D automatic changeover current limiter FZL 4146 G datasheet

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG E L E C T R O N I C S MJD44H11 42E INC 7^4145 D 000=1013 T S S Î 1 G K NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE POWER AND SWITCHINGSUCH AS OUTPUT OR DRIVER STAGES IN APPLICATIONS. D-PACK FOR SURFACE MOUNT APPLICATIONS • L e a d F o rm e d fo r S u rfa c e M o u n t A p p lic a tio n s N o S u ffix


    OCR Scan     		PDF MJD44H11

    siemens fzl 125

    Abstract: sc 4145 siemens lsl ic sc 4145 FZL+111
    Text: SIEMENS Quad Driver Incl. Short-Circuit Signaling FZL 4145 D Bipolar IC Features • Short-circuit shutdown with clock generator • Four driver circuits for controlling power transistors • Overload and short-circuit signaling Type Ordering Code Package


    OCR Scan     		PDF Q67000-H8437 P-DIP-18-1 siemens fzl 125 sc 4145 siemens lsl ic sc 4145 FZL+111

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS Quad Driver Incl. Short-Circuit Signaling FZL 4145 D Bipolar IC Features • Short-circuit shutdown with clock generator • Four driver circuits for controlling power transistors • Overload and short-circuit signaling Type □ FZL 4145 D Ordering Code


    OCR Scan     		PDF Q67000-H8437 P-DIP-18-1

    k 4145

    Abstract: fzl4145 FZL4 siemens lsl
    Text: SIEMENS Quad Driver Incl. Short-C ircuit Signaling FZL 4145 D Features • Short-circuit shutdown with clock generator • Four driver circuits for controlling power transistors • Overload and short-circuit signaling Type □ FZL 4145 D Ordering Code Package


    OCR Scan     		PDF Q67000-H8437 P-DIP-18-1 FZL4145 k 4145 FZL4 siemens lsl

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG S EM I C ON D UC T OR IN C BCW33 14E D j 0007207 | NPN EPITAXIAL SILICON TRANSISTOR T liL N tK A L 2 rU n rU o C - ^ - l‘ 1 r l A I N o l d 1U H SOT-23 ABSOLUTE MAXIMUM RATINGS Ta= 25°C Sym bol C h a ra cte ristic ; Collector-Base Voltage ' Collector-Emitter Voltage


    OCR Scan     		PDF BCW33 OT-23

    Untitled

    Abstract: No abstract text available
    Text: [SAMSUNG SEM IC ON DU CT OR INC MPS3705 14E D 17^4145 0QQ731fc, 7 | NPN EPITAXIAL SILICON TRANSISTOR G E N E R A L P U R P O S E TRAN SISTO R • Collector-Emitter Voltage: Vceo=30V • C o lle cto r D issipation: Pc max =625mW A B S O L U T E MAXIMUM RATINGS (Ta=25°C)


    OCR Scan     		PDF 0QQ731fc, MPS3705 625mW 2N4400

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG S EMICONDUCTOR IN C ' BCW69 D Q 0D 75 1b 3 | PNP EPITAXIAL SILICON TRANSISTOR c r -g r i? GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic . Collector-Emitfer Voltage Emitter-Base Voltage : Collector Current I C ollector Dissipation


    OCR Scan     		PDF BCW69 OT-23

    Untitled

    Abstract: No abstract text available
    Text: S AM SU N G SEMICONDUCTOR INC BCW32 1ME D 7^4145 000?a0b | NPN EPITAXIAL SILICON TRANSISTOR .T-23- I e! GENERAL PURPOSE TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C ) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current


    OCR Scan     		PDF BCW32 T-23- MMBT5088

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG SEMICONDUCTOR I NC MPS3702 14E D | 7^4145 0007312 T | PNP EPITAXIAL SILICON TRANSISTOR T -2 9 -2 1 AMPLIFIER TRANSISTOR !- • Collector-Emitter Voltage: Veto =25V • Collector Dissipation: Pc max =625mW '- TO-92 ABSOLUTE MAXIMUM RATINGS (Ta=25°C)


    OCR Scan     		PDF MPS3702 625mW

    Untitled

    Abstract: No abstract text available
    Text: S A M S U N G SEMICONDUCTOR INC MPSA 06 IME D 7 ^ * 4 1 4 2 QDG73MS 3 | NPN EPITAXIAL SILICON TRANSISTOR ' ' T-29^21 AMPLIFIER TRANSISTOR • Collector-Hmltter Voltage: V c e o = 8 0 V • Collector Dissipation: Pc (max =625mW A B S O L U T E MAXIMUM RATINGS (Ta=25°C)


    OCR Scan     		PDF QDG73MS 625mW MPSA05

    Darlington transistor T7 27

    Abstract: Samsung s3 mpsa25 p 605 transistor equivalent R/Detector/"detect18 ic"/"CD"/TB 2929 Ho
    Text: SAMSUNG SEMICONDUCTOR INC MPSA25 14E O Jj TTbMlMt? 0007355 O | NPN EPITAXIAL - T ^ SILICON DARLINGTON TRANSISTOR DARLINGTON TRANSISTOR • Collector-Emltter Voltage: Vc*»=40V • Collector Dissipation: Pc max =625mW A B SO LU TE MAXIMUM RATINGS (T,=25°C)


    OCR Scan     		PDF MPSA25 625mW Darlington transistor T7 27 Samsung s3 mpsa25 p 605 transistor equivalent R/Detector/"detect18 ic"/"CD"/TB 2929 Ho

    KSC2333

    Abstract: NPN Transistor TO220 vcc 150V transistor 400v 3a 40w 180MH KSA940 KSC2073 KSC2233 KSC2335 samsung tv YS 150 003 b
    Text: SAMSUNG SEM ICONDUCTOR INC KSC2Ö73 l^ E D | GOOTSMb 2 NPN EPITAXIAL SILICON TRANSISTOR r - 3 3 - o q TV VERTICAL DEFLECTION OUTPUT TO-220 • Complement to KSA940 • Collector-Base Voltage Vcso=150V ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic ; I


    OCR Scan     		PDF KSC2073 KSA940 r-33-ctf O-220 KSC2333 NPN Transistor TO220 vcc 150V transistor 400v 3a 40w 180MH KSA940 KSC2233 KSC2335 samsung tv YS 150 003 b

    MMBT4123

    Abstract: transistor sot-23 marking L8
    Text: SAM S UN G SEM ICO NDUCTOR INC MMBT4123 1ME 0 | ^4145 00072t*S 5 | NPN EPITAXIAL SILICON TRANSISTOR T-aq-tì GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Symbol Rating Unit Co#ector-Base Voltage Collector-Emitter Voltage


    OCR Scan     		PDF MMBT4123 OT-23 100MHz 100MHz 10OKHz 100KHz transistor sot-23 marking L8

    Untitled

    Abstract: No abstract text available
    Text: BCX71J PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Symbol Rating Unit Collector-Base Voltage VcBO -4 5 V Collector-Emitter Voltage V ceo -4 5 V Emitter-Base Voltage V ebo Collector Current


    OCR Scan     		PDF BCX71J

    MARKING BL

    Abstract: fS 4142 transistor 513 MMBC1622D6
    Text: SAMSUNG S EMICONDUCTOR INC MMBC1622D6 14E D ^7Tt.4145 0007542 4 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Symbol Characteristic Collector-Base Voltage Cotector-Emitter Voltage Emitter-Base Voltage Collector Current


    OCR Scan     		PDF MMBC1622D6 100mA, 100MHz MARKING BL fS 4142 transistor 513

    2929 transistor

    Abstract: MPSA25 mpsa82 MPSA26 MPSA45 MPSA55 MPSA62 MPSA63 I0204 625MW
    Text: SAMSUNG SEMICONDUCTOR INC MPSA26 14E O 00073SM I NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR T -2 9 -2 9 DARLINGTON TRANSISTOR • Collector-Emitter Voltage: Vc*s=50V • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Ch aracte ristic


    OCR Scan     		PDF 00073SM MPSA26 T-29-29 625mW MPSA25 MPSA62 100/iA, 100mA, 2929 transistor mpsa82 MPSA45 MPSA55 MPSA63 I0204 625MW

    siemens fzl 4141

    Abstract: fzl 41450 fzl*4141 fzl4141d fzl4141 siemens lsl fzl4145 ts 4141 pin diagram of ic 4141 41450
    Text: FZL4141 D FZL 4145 D The switching threshold at inputs Dl and EN A can be adjusted between 1.5 V and 7 V via connection TS: yTS = 0 V; VTS = 0 to 5 V; Ws = vs- input threshold = 1.5 V for 5 V logic input threshold = yTS +1.5 V inP ut threshold = 7 V (for 12/15 V and 24/28 V logic)


    OCR Scan     		PDF FZL4141 siemens fzl 4141 fzl 41450 fzl*4141 fzl4141d siemens lsl fzl4145 ts 4141 pin diagram of ic 4141 41450

    KST2222

    Abstract: transistor marking 551
    Text: NPN EPITAXIAL SILICON TRANSISTOR KST2222 GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature


    OCR Scan     		PDF KST2222 QQ5S107 KST2222 transistor marking 551

    T1P126

    Abstract: transistor g35 B250H TIPI20 transistor darlington TIP-120 TIP120 TIP125 TB-127 tip120 pnp
    Text: 1 4E D SAMSUNG SEMICONDUCTOR INC I 7^4145 0007734 J 3 NPN CKII AXIAL SILICO I DARLINGTON TRANSISTOR TIP120 MEDIUM POWER LINEAR SWITCHING APPLICATIONS • Complement to TIP125 AB SO LU T E M A X IM U M RATINGS Ta=25°C Characteristic Collector-Base Voltage


    OCR Scan     		PDF TIP120 TIP125 O-220 T1P126 transistor g35 B250H TIPI20 transistor darlington TIP-120 TIP120 TIP125 TB-127 tip120 pnp

    KSR1010

    Abstract: KSR2010
    Text: ¡SAMSUNG SEMICONDUCTOR E O INC I 7Tfci414S 0 00 71 05 5 | KSR2010 PNP EPITAXIAL SILICON TRANSISTOR - :-— r - 3 * l - 13 SWITCHING APPLICATION Bias Resistor Built In • Switching Circuit, Inverter, Interface circuit Driver circuit


    OCR Scan     		PDF 00Q710S KSR2010 --T-31- KSR1010 KSR1010 KSR2010

    000L SOT23

    Abstract: KSA1182 marking 000L KSA2859
    Text: SAMSUNG SEMICONDUCTOR ^NC KSA1182 14E D | 7^4145 0001,033 0 | T-i?-/ 9 PN.P EPITAXIAL SILICO N TRANSISTOR LOW FREQUENCY POWER AMPLIFIER SO T-23 * Complement to KSA2859 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage


    OCR Scan     		PDF KSA1182 KSA2859 OT-23 T-29-15 000L SOT23 marking 000L KSA2859

    MMBC1623L3

    Abstract: No abstract text available
    Text: r 7 .SAMSUNG SEMICONDUCTOR INC MMBC1623L3 m e o §7^ 14 2 0007 am, i | NPN EPITAXIAL SILICON TRANSISTOR — :-T-aa- AMPLIFIER TRANSISTOR - SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Sym bol Collector-Base Voltage Collector-Emitter Voltage


    OCR Scan     		PDF 000724b MMBC1623L3 OT-23 100mA, 100MHz MMBC1623L3