Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors KTA1668 SOT-89-3L TRANSISTOR PNP 1. BASE FEATURES z High voltage: VCEO=-60V z High transistors frequency 2. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
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OT-89-3L
KTA1668
OT-89-3L
-50mA
-500mA
-50mA,
100MHz
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JY transistor
Abstract: JY marking transistor marking JY KTA1668
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors KTA1668 SOT-89 TRANSISTOR PNP 1. BASE FEATURES z High voltage: VCEO=-60V z High transistors frequency 2. COLLECTOR 1 2 3. EMITTER MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
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OT-89
KTA1668
OT-89
-50mA
-500mA
-50mA,
100MHz
JY transistor
JY marking transistor
marking JY
KTA1668
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JY marking transistor
Abstract: JY transistor PNP TRANSISTOR SOT89 marking 01, sot-89 sot-89 PF
Text: KTA1668 SOT-89 Transistor PNP 1. BASE SOT-89 2. COLLECTOR 1 2 3. EMITTER 3 4.6 4.4 1.8 1.4 1.6 1.4 Features 2.6 4.25 2.4 3.75 High voltage: VCEO=-60V High transistors frequency 0.8 MIN 0.44 0.37 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol
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KTA1668
OT-89
OT-89
-500mA
-50mA
-50mA,
100MHz
-50mA
JY marking transistor
JY transistor
PNP TRANSISTOR SOT89
marking 01, sot-89
sot-89 PF
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Dual Series Switching Diode This switching diode has the following features: . Low Leakage Current Applications . Medium Speed Switching Times LBAV199LT1G . Pb-Free Package is Available. 3 2 CATHODE 1 ANODE 1 3 CAHODE/ANODE 2 CASE 318–08, STYLE 11
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LBAV199LT1G
236AB)
3000/Tape
LBAV199LT3G
10000/Tape
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JY marking transistor
Abstract: 2SC3770 marking JY L-40mm 20954
Text: Ordering number:EN2095A NPN Epitaxial Planar Silicon Transistor 2SC3770 UHF, VHF Oscillator Mixer, HF Amplifier Applications Applications Package Dimensions • UHF/VHF frequency converters, local oscillators, HF amplifiers. unit:mm 2018A [2SC3770] Features
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EN2095A
2SC3770
2SC3770]
JY marking transistor
2SC3770
marking JY
L-40mm
20954
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27593
Abstract: 2SC4269 2SC4406 marking JY VEBO-15V JY marking transistor
Text: Ordering number:EN2759A NPN Epitaxial Planar Silicon Transistor 2SC4406 VHF Frequency Mixer, Local Oscillator Applications Applications Package Dimensions • VHF mixer, frequency converters, local oscillators. unit:mm 2059B Features [2SC4406] 0.425 0.15 0.2
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EN2759A
2SC4406
2059B
2SC4406]
2SC4406applied
27593
2SC4269
2SC4406
marking JY
VEBO-15V
JY marking transistor
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2SC3770
Abstract: ITR05889 ITR05890 ITR05891 ITR05892 ITR05893 marking JY
Text: Ordering number:ENN2095A NPN Epitaxial Planar Silicon Transistor 2SC3770 UHF, VHF Oscillator Mixer, HF Amplifier Applications Applications Package Dimensions • UHF/VHF frequency converters, local oscillators, HF amplifiers. unit:mm 2018B [2SC3770] · High power gain : PG=15dB typ f=0.4GHz .
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ENN2095A
2SC3770
2018B
2SC3770]
2SC3770
ITR05889
ITR05890
ITR05891
ITR05892
ITR05893
marking JY
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2SC4406
Abstract: 2SC4269 ITR06763 ITR06764 ITR06765 ITR06766 marking JY
Text: Ordering number:ENN2759A NPN Epitaxial Planar Silicon Transistor 2SC4406 VHF Frequency Mixer, Local Oscillator Applications Applications Package Dimensions • VHF mixer, frequency converters, local oscillators. unit:mm 2059B Features [2SC4406] 0.15 0.2 0.425
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ENN2759A
2SC4406
2059B
2SC4406]
2SC4406applied
2SC4406
2SC4269
ITR06763
ITR06764
ITR06765
ITR06766
marking JY
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BF441
Abstract: bf440 transistor BF 275 440 transistor JY marking transistor bf 440 transistor
Text: filC D TELEFUNKEN ELECTRONIC • fi^EGO^b QQ055Q7 T - J - BF 440 • BF 441 TTilLitFdDÄIiK] electronic Creative Technologies Silicon PNP Planar Epitaxial RF Transistors Applications: BF 440: Controlled AM and FM amplifier stages BF 441: AM and FM amplifier stages
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QQ055Q7
569-GS
BF441
bf440
transistor BF 275
440 transistor
JY marking transistor
bf 440 transistor
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S763T
Abstract: JY marking transistor TRANSISTOR SOT-23 marking JE
Text: TELEFUNKEN ELECTRONIC Ô1C D • flc 200eib 000543Q L ■lALââ S 763 T Melectronic -r- jy- 2./ Creative Technologies Silicon NPN Planar RF Transistor Applications: RF amplifier up to GHz range Features: >Low noise figures • High power gain Dimensions In mm
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000543Q
569-GS
S763T
JY marking transistor
TRANSISTOR SOT-23 marking JE
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uhf amp circuit diagrams
Abstract: marking JY 2095 FL 2SC3770 JY marking transistor 2095A marking u4j
Text: Ordering number :EN2095A ;_ 2SC3770 No.2095A NPN Epitaxial Planar Silicon Transistor UHF, VHF Oscillator, Mixer, HF Amp Applications Applications . UHF/VHF frequency converters, local oscillators, HF amplifiers Features . High power gain: PG=15dB typ f=0.4GHz .
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2SC3770
uhf amp circuit diagrams
marking JY
2095 FL
2SC3770
JY marking transistor
2095A
marking u4j
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relay KEC
Abstract: KTB1124 KTD1624 MARKING A1L PW-20 relay PW20
Text: KTD1624 SEMICONDUCTOR TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VOLTAGE REGULATORS, RELAY DRIVERS LAMP DRIVERS, ELECTRICAL EQUIPMENT FEATURES • • • • • Adoption of MBIT processes. Low collector-to-emitter saturation voltage. Fast switching speed.
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KTD1624
KTB1124.
250mm
25mm2
relay KEC
KTB1124
KTD1624
MARKING A1L
PW-20
relay PW20
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Untitled
Abstract: No abstract text available
Text: • bbS3^3i ooesa'ii a?3 * apx N AMER PHILIPS/DISCRETE b7E » PMBTA42 PMBTA43 yv SILICON EPITAXIAL TRANSISTORS N-P-N transistors in a microminiature SMD plastic envelope intended fo r surface mounted applica tions. They are primarily intended for use in telephony and professional communication equipment.
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PMBTA42
PMBTA43
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MT4S06U
Abstract: No abstract text available
Text: TO SH IBA MT4S06U TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT4S06U Unit in mm V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS 2.1 ± 0.1 Low Noise Figure TTicrh T-ain NF = 1.6 dB ( V C E = 3 V, In = 3 mA, f = 2 GHz 1.25 ± 0.1 ISoi J2 = 11 5 rITl
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MT4S06U
MT4S06U
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SK1062 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2 S K 1 062 Unit in mm HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCHING APPLICATIONS INTERFACE APPLICATIONS Excellent Switching Time : ton = 14ns Typ. High Forward Transfer Admittance
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2SK1062
2SJ168.
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K2744
Abstract: No abstract text available
Text: TO SHIBA 2SK2744 TOSHIBA FIELD EFFECT TRANSISTOR 1 <; K M T • m. SILICON N CHANNEL MOS TYPE tt-M OSV 1 7 A 4 « ■ HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS
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2SK2744
--45A
K2744-
XT11m
K2744
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BX-1457
Abstract: No abstract text available
Text: Ordering number: EN 4926 No.4926 SAiYO i FP304 TR : NPN Epitaxial Planar Silicon Transistor SBD : Schottky Barrier Diode DC-DC Converter F eatu res • Complex type w ith an NPN transistor and a Schottky barrier diode facilitating high-density mounting. • The FP304 is composed of 2 chips, one being equivalent to the 2SD1620 and the other the SB07-03C,
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FP304
FP304
2SD1620
SB07-03C,
250mm2X
BX-1457
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Q4005
Abstract: 2SC3268 EIAJ C-3
Text: TO SH IBA 2SC3268 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC3268 Unit in mm VH F-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS. . . 4.6 MAX. NF = 1.7dB, |S2lel2 = 15.0dB f = 500MHz NF = 2dB, |S2iel2 = 9.5dB (f = 1000MHz) 1.6 MAX. Q4±a05, 1.7 M AX.
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2SC3268
500MHz)
1000MHz)
250mm2
Q4005
2SC3268
EIAJ C-3
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TPC8002 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSVI TPC8002 INDUSTRIAL APPLICATIONS U nit in mm LITHIUM ION BATTERY PORTABLE MACHINES AND TOOLS NOTE BOOK PC • Low Drain-Source ON Resistance • High Forward Transfer A dm ittance: jYfs| = 15S (Typ.)
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TPC8002
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ke marking transistor
Abstract: 2SJ168 2SK1062 marking transistor KE marking jyw JYW marking marking ke toshiba
Text: TOSHIBA 2SK1062 TO SHIBA FIELD EFFECT TRANSISTOR SILICON N C HANN EL MOS TYPE 2 S K 1 062 HIGH SPEED SW ITCHING APPLICATIONS Unit in mm A N A L O G SW ITCHING APPLICATIONS + 0.5 2 .5 - 0 .3 INTERFACE APPLICATIONS + 0.25 1 .5 -0 .1 5 Excellent Switching Time : ton = 14ns Typ.
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2SK1062
2SJ168.
SC-59
ke marking transistor
2SJ168
2SK1062
marking transistor KE
marking jyw
JYW marking
marking ke toshiba
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3SK294
Abstract: No abstract text available
Text: TOSHIBA 3SK294 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N-CHANNEL DUAL GATE MOS TYPE 3SK294 Unit in mm TV TUNER, VHF RF AMPLIFIER APPLICATION • Superior Cross Modulation Performance • Low Reverse Transfer Capacitance : Crss = 20fF Typ. • Low Noise Figure
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3SK294
500MHz
101------------lo
3SK294
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SK2508 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSV 2SK2508 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm SWITCHING REGULATOR AND DC-DC CONVERTER AND MOTOR APPLICATIONS • Low Drain-Source ON Resistance
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2SK2508
20kil)
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DIODE JS.9 smd
Abstract: No abstract text available
Text: SIEMENS SPP03N60S5 SPB03N60S5 Preliminary data Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche proved • Extreme dv/dt rated • Optimized capacitances • Improved noise immunity
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SPP03N60S5
SPB03N60S5
SPPx4N60S5/SPBx4N60S5
P-T0220-3-1
03N60S5
Q67040-S4184
P-T0263-3-2
DIODE JS.9 smd
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marking lora
Abstract: No abstract text available
Text: TOSHIBA 2SK2598 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL M O S TYPE tt-M O S V 2SK2598 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER A N D MOTOR DRIVE INDUSTRIAL APPLICATIONS TO-220FL Unit in mm APPLICATIONS
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2SK2598
O-220FL
100//A
lAR--13A,
--25ft
marking lora
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