U125D
Abstract: c5856 T1-6TCUP U12B SMA200UP C71B RC0603 U740 AD9861 CC0805
Text: 4 3 1 2 REVISIONS D DVIN1 TB3 L9 1 TP23 RED JP4 LC0805 DRVDD BCASE TB3 VAL C11 DNP 16V BCASE C12 10UF 10V CC0805 C20 B Revision of pluto64dual Rev A. 0306.04 DATE APPROVED JRM C alter component package JP50, C43. misc labeling. spread J11,J12 0308.18 JRM D
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LC0805
CC0805
pluto64dual
RC0805
U125D
c5856
T1-6TCUP
U12B
SMA200UP
C71B
RC0603
U740
AD9861
CC0805
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CA5420
Abstract: CA5420A CA5420AE CA5420AM CA5420AT CA5420E CA5420M CA5420T
Text: HARRIS SEMICOND SECTOR blE D • fii h a r r i s 43DS271 DD4b432 bflfl « H A S CA5420 Jrm % J S E M I C O N D U C T O R M mm Low Supply Voltage, Low Input Current BiMOS Operational Amplifier Features Description • CA5420A, CA5420 at 5V Supply Voltage with Full
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43DS271
DD4b432
CA5420
CA5420A,
CA5420
300nA
000Mi2)
CA5420A
CA5420AE
CA5420AM
CA5420AT
CA5420E
CA5420M
CA5420T
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jrm 45
Abstract: No abstract text available
Text: REV. B MATERIAL AND DESCRIPTION SEE ECO G M - 10790 DATE BY 1 1 /2 4 /9 9 JRM FINISH JACK HOUSING: CRES 3 0 3 PER ASTM A 4 8 4 AND ASTM A 5 8 2 OR ASTM A 5 5 5 AND ASTM A 581. GOLD PLATE PER MIL—G—4 5 2 0 4 SOCKET CONTACT: BERYLLIUM COPPER PER ASTM B 196 A N D /O R ASTM B 197.
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022 JRC
Abstract: JRC 022 74221 74423 ctct
Text: — 230 — 74423 Dual R e trig g e ra b le S ingle S h o t to td CCfe zB ía. i2j^nininininiriLf •A I 1 IQ 20 2 Jrm/ GMO ?a m OA, B í O X * * f t * I HS;3C LT v^ ¿ è CLR t mm H i z i x i v otw= 0.45RT.CT f 5 k S < R l < 2 6 0 k ^ \ lOOOpFäCr RCTRIQGER PULSE
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260kQ\
45Rt-Ct
022 JRC
JRC 022
74221
74423
ctct
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x-band magnetron
Abstract: magnetron ns
Text: 95-01-12 14:39 i-ooo r.ud. M ¡3 3 ' 2 H 3 | ^ H B I P i'0 d u c t bulletin y\ 133 '1 X -B a n d M a g n etro n GENERAL DESCRIPTION M133‘7 is a fixed frequency pulsed type X-band magnetron designed to operate in the frequency range of ^ 1 0 5 t^n y jrM H z with a peak output power o f SO kW. It is packaged and waveguide output
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/337J
x-band magnetron
magnetron ns
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2sk1603
Abstract: 2SK2236 2SK1723 2SK2222 2sk538 2SK180S 2SK584 2SK1882 2SK1513 2sk1915
Text: Power MOS FET Type No. index Main Characteristics Type No. Series Nam e, Package Type Voss V 2SJ115 2SJ123 2SJ126 2SJ147 2SJ183 2SJ200 2SJ201 2SJ224 2SJ238 2SJ239 2SJ240 2SJ241 2SJ304 2SJ315 2SJ312 2SJ313 2SJ334 2SJ338 2SJ349 2SJ359 2SJ360 2SJ377 2SJ378
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2SJ115
2SJ123
2SJ126
2SJ147
2SJ183
2SJ200
2SJ201
2SJ224
2SJ238
2SJ239
2sk1603
2SK2236
2SK1723
2SK2222
2sk538
2SK180S
2SK584
2SK1882
2SK1513
2sk1915
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI RF POWER MODULE M57752 430-450MHZ, 12.5V, 13W, FM MOBILE RADIO OUTLINE DRAWING BLOCK DIAGRAM Dim ensions in mm ©HK- —© P IN : © P in : RF INPUT © V C C 1 : 1st. DC SUPPLY V C C 2 : 2nd. DC SUPPLY © VC C 3 : 3nd. DC SUPPLY ®Po : RF O UTPUT
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M57752
430-450MHZ,
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FST6035
Abstract: FST6040 FST6045 FST6050
Text: Schottky Powermod FST 60 P Millimeter Dim. Inches Minimum Maximum minimum Maximum Notes A C E F G H J K L M N P Microsemi Catalog Number Working Peak Reverse Voltage FST6035* FST6040* FST6045» FST6050* 35V 40V 45V 50V 1.995 0.495 0.990 2.390 1.4-90 0.120
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FST6035*
FST6040*
FST6045*
FST6050Â
C-183
FST6035
FST6040
FST6045
FST6050
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k2038
Abstract: K1357 K 1357 k1363 K2077 K1349 K1356 K1574 K2039 K2222
Text: Power MOS FET Lineup Vdss = 60 ~ 200 V Voss (V) Id (A) S eriea lineup ir-M OS II ff-MOS L2-s*M OS III 0.8 1.0 2.0 T 2 S K 1 112(0.16) ▼ 2SJ183(0 35) 5 .0 •2S K 6 72(0.2) ♦ 2 S J 147 (0.20) O 2SJ224(0.2) ♦ 2 S K 5 3 2 (0.085) 10 12 O2SJ238(0.85) >2SK1717(0.35)
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2SJ183
2SK1078
O2SJ238
2SK1717
2SK1719
2SJ239I0
2SJ315
2SJ36O
2SK2231
2SJ377
k2038
K1357
K 1357
k1363
K2077
K1349
K1356
K1574
K2039
K2222
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Untitled
Abstract: No abstract text available
Text: FAST RECOVERY DIODE 30DF4 30DF6 3.3A /400— 6 0 0 V /trr : 400nsec FEATURES 5.8 .23 DIA • Super Fast Recovery -f °Low Forward Voltage Drop 1.5Í-059) DIA 1.3(.051) o Low Power Loss, High Efficiency 21(.83) ° High Surge Capability MIN ° 100 Volts through 600 Volts Types Available
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30DF4
30DF6
400nsec
30DF4
bblS123
0QG21SS
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jrm 45
Abstract: jrm A 45 DIODE 1B 1b005 diode 60 31 1B01S 1B02S 1B04S
Text: International I ö R Rectifier Bridges Fax on Case Demand Outline Number Key I fsm Part Number VRRM lo @ T C V (A) W Vfm (V) (A) 50 Hi (A) tOHz (AJ R »< ' l * {mW Notes Single Phase Diode D- 71 A vaila b le in E l 50 1 40 30 31 60 5 6 7 15 1B01S 100 1
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1B01S
1B02S
1B04S
1B005
1KAB05H
fKAB10E
1KAB10EL3
jrm 45
jrm A 45
DIODE 1B
diode 60 31
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jrm 45
Abstract: 30VQ04 30VQ03 30VQ03F 30VQ04F
Text: SCHOTTKY BARRIER DIODE 30VQ03 30VQ04 30 VQ 03F 30 VQ 04F 3 .3 A / 3 0 ~ 4 0 V FEATURES • TO-251AA Case • TO-252AA Case Surface Mount Device ° Low Forward Voltage Drop » Low Power Loss ° High Surge Capability • 30 Volts thru 100 Volts Types Available
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30VQ03
30VQ04
30VQ03F
30VQ04F
O-251AA
T0-252AA
O-252AA
38MAX
56MAXjl
30VQ03
jrm 45
30VQ04F
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Untitled
Abstract: No abstract text available
Text: SCHOTTKY BARRIER DIODE iia /3 o ~ 4 ov fio p o s q f Ìopm q FEATURES o Similar to T0-220AB Case « Fully Molded Isolation F-Type 0 Dual Diodes - Cathode Common 0low Forward Voltage Drop » Low Power Loss, High Efficiency o High Surge Capability » 20 Volts thru 100 Volts Types
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T0-220AB
C10P0
F10P03Q
LL1S123
D002D37
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Untitled
Abstract: No abstract text available
Text: SCHOTTKY BARRIER DIODE 30VQ03 30VQ04 30VQ03F 30VQ04F 3 .3 A /3 0 ~ 4 0 V TO-2 5 1 A A FEATURES 1.27 051 MAX • TO-251AA Case TO-2 5 2 A A 2.38M AX (.094 (.094) •TO-252AA Case Surface Mount Device n 0.91.035) NO M IN AL 5.981.235) i_ ° Low Forward Voltage Drop
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30VQ03
30VQ04
30VQ03F
30VQ04F
O-251AA
O-252AA
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Y2550
Abstract: 30KF50B 30KF50E
Text: 30KF50E 30KF50B 3 3 A /5 0 0 V / trr : 70nsec FAST RECOVERY DIODE FEATU R ES 5.3{.209 4-7 185) 15.91.626) 3.6(.142)m . 1 5 .3 (.6 0 2 )^ / 3.4(.T34l o Similar to TO-247AC Case ° Ultra - Fast Recovery ° Low Forward Voltage Drop o Low Power Loss, High Efficiency
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3A/500V/trr
70nsec
30KF50E
30KF50B
O-247AC
0D01S71
Y2550
30KF50B
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EC11FS1
Abstract: 21b4 200v 3A ultra fast recovery diode EC11FS2 185L
Text: FAST RECOVERY DIODE l . l A / 1 0 0 ~ 2 0 0 V / t r r : 30nsec EC 11FS 1 EC11FS2 FEATURES oMiniature Size, Surface Mount Device • 4.7 .185 ° Ultra - Fast Recovery * -^ _ 4 .7 (.1 6 8 )— « 4.3C .169) ] » Low Forward Voltage Drop 2.71.106) 2.3(.ft91)
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lA/100
00V/trr
30nsec
EC11FS1
EC11FS2
EC11FS1
bbl5123
21b4
200v 3A ultra fast recovery diode
EC11FS2
185L
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jrm 45
Abstract: 30VF60 30VF60F
Text: FAST RECOVERY DIODE 30VF60 30VF60F 3.3A/eoov/trr :35nsec 2.38M AX .094 FEATURES 2.38M A X (.094) o TO-251AA Case o TO-252AA Case, Surface Mount Device o Ultra-Fast Recovery N O M IN A L 0.8M AX (.03) — I ° Low For weird Voltage Drop o Low Power Loss TO-252AA
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A/600V/trr
35nsec
30VF60
30VF60F
O-251AA
O-252AA
38MAX
58MAXJ1
jrm 45
30VF60F
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10KQ30
Abstract: F10KQ40 fl37 10KQ30B 10KQ40 10KQ40B F10KQ30B F10KQ40B
Text: n . / , n .nw 10KQ30 F10KQ30 10KQ40 F10KQ40 11A/30~40V 10KQ30B F10KQ30B 10KQ40B F10KQ40B CriinTTIfV RARRIFR niflRF o L H U IlK T HAHnltn IllUUt FEATURES ° Similar to T0-220AC and TO-220AB Case • Fully Molded Isolation Case F - Type ° Low Forward Voltage Drop
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10KQ40
fiokq40
1A/30
10KQ30B
F10KQ30B
10KQ40B
F10KQ40I
T0-220AC
O-220AB
10KQ30
10KQ30
F10KQ40
fl37
F10KQ40B
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FST10125
Abstract: No abstract text available
Text: D im . Inches M illim e te r M inim um M ax im u m Detail 6 -r Detail B MicrosemI Catalog Number FST10125* FST10130* FST10135* FST10140* FST10145* I Baseplate; Nickel plated copper; A C E F G H J K L M N P 1.995 0.495 0.990 2.390 1.490 0.120 M inim um 2.005
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C-192
C-193
FST10125
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F103M
Abstract: No abstract text available
Text: YTF633 FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE jr-M O Sn HIGH SPEED,HIGH CURRENT SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS CHOPPER REGULATOR,DC-DC CONVERTER AND HOTOR Unit in urn DRIVE APPLICATIONS. 10.3MAK. f- ¿3.610.2 FEATURES: •Low Drain-Source ON Resistance :
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YTF633
10xts
-100A/ps
F103M
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f10p04q
Abstract: C10P04Q jrm 45 C10P03Q F10P F10P03Q
Text: SCHOTTKY BARRIER DIODE C10P03Q C10P04Q F10P03Q F10P04Q 11A/30~40V FEA TU R E S o Similar to T0-220AB Case « Fully Molded Isolation F-Type 0 Dual Diodes - Cathode Common 0 L o w Forward Voltage Drop » L o w Power L o s s , High Efficiency o High Surge Capability
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T0-220AB
C10P0
F10P03Q
C10P04Q
F10P04Q
CMPMMF10PMQ)
bblS123
f10p04q
jrm 45
C10P03Q
F10P
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YTFP453
Abstract: Field Effect Transistor Silicon N Channel MOS vdss 600
Text: FIELD EFFECT TRANSISTOR YTFP453 SILICON N CHANNEL MOS TYPE jr-M O S n HIGH SPEED,HIGH CURRENT SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS CHOPPER REGULATOR,DC-DC CONVERTER ANO HOTOR Unit in aa 1&9MAX. DRIVE APPLICATIONS. 0 3 .2 ± a s ¿ & Æ FEATURES:
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YTFP453
10jus
-100A/W
YTFP453
Field Effect Transistor Silicon N Channel MOS vdss 600
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60.0000 oscillator
Abstract: 318180
Text: REV «CMPTIBi D REVISED FREQ TABLE 1.0 MONITOR PART NUUER 2. 0 *- AgOTcrrATTny U Y H m t I K T B I ATTKS. HTUHS. T R I-S T A T E a 0 ELETTRI CAL CHARACTERISTICS NOIE 1 ADJUSDCNT RAM EJsZi _ 3 .1 .£ 1 ADJUSTMENT RESOJUnON 0&L a 1 .3 STABILITY a i . a i FREBUENCY v s AMBIENT
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419B-XX
275C6
063C1
SP419BD2
13goPg
60.0000 oscillator
318180
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YTF532
Abstract: No abstract text available
Text: FIELD EFFECT TRANSISTOR YTF532 SILICON N CHANNEL MOS TYPE jr-M O S n HI GH S P E E D , H I G H CURRENT SWI T C H I N G A P P L I C A T I O N S . INDUSTRIAL APPLICATIONS CHOPPER R E G U L A T O R , D C - D C CON V E R T E R AND HOTOR Unit DRIVE A PP L IC A TI O NS .
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YTF532
00A/tfs
YTF532
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