H11G2
Abstract: H11G1 E91231 H11G1X H11G3 Diode smd code sm
Text: H11G1, H11G2, H11G3 H11G1X HIGH VOLTAGE DARLINGTON OUTPUT OPTICALLY COUPLED ISOLATOR APPROVALS UL recognised, File No. E91231 Package Code " JJ " 'X' SPECIFICATIONAPPROVALS H11G1X VDE 0884 in 3 available lead form : - STD - G form - SMD approved to CECC 00802
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H11G1,
H11G2,
H11G3
H11G1X
E91231
H11G1X
DB92008
H11G2
H11G1
E91231
H11G3
Diode smd code sm
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Untitled
Abstract: No abstract text available
Text: H11G1, H11G2, H11G3 H11G1X HIGH VOLTAGE DARLINGTON OUTPUT OPTICALLY COUPLED ISOLATOR APPROVALS z UL recognised, File No. E91231 Package Code " JJ " 'X' SPECIFICATIONAPPROVALS z H11G1X VDE 0884 in 3 available lead form:- STD - G form - SMD approved to CECC 00802
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H11G1,
H11G2,
H11G3
H11G1X
E91231
H11G1X
DB92008m-AAS/A5
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IS4N46
Abstract: 4N45 E91231 IS4N45 4N46 db9102 5v 10mA reed relay
Text: IS4N46 IS4N45 LOW INPUT CURRENT DARLINGTON OUTPUT OPTICALLY COUPLED ISOLATOR APPROVALS z UL recognised, File No. E91231 "JJ " 'X' SPECIFICATIONAPPROVALS z VDE 0884 in 3 available lead form : - STD - G form - SMD approved to CECC 00802 DESCRIPTION The IS4N45, IS4N46 are optically coupled
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IS4N46
IS4N45
E91231
DB91024
IS4N46
4N45
E91231
IS4N45
4N46
db9102
5v 10mA reed relay
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SMD npn TRANSISTOR 1a Darlington 200v
Abstract: smd transistor 2.FC IS725X E91231 IS725 smd diode code A4
Text: IS725 IS725X HIGH VOLTAGE DARLINGTON OUTPUT OPTICALLY COUPLED ISOLATOR APPROVALS UL recognised, File No. E91231 Package Code " JJ " 'X' SPECIFICATIONAPPROVALS z VDE 0884 in 3 available lead form : - STD - G form - SMD approved to CECC 00802 DESCRIPTION The IS725 is an optically coupled isolator
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IS725
IS725X
E91231
IS725
100mA
DB91065m-AAS/A4
SMD npn TRANSISTOR 1a Darlington 200v
smd transistor 2.FC
IS725X
E91231
smd diode code A4
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smd diode sod-323 marking code a2
Abstract: smd diode A2 smd diode a6 JJ SMD diode smd diode marking JJ smd diode code a6 diode SMD MARKING CODE A6 DIODE SMD A6 A2 diode smd smd diode marking a6
Text: Two Terminals SMD Switching Diodes 1N4148WS/1N4448WS/BAV16WS Two Terminals SMD Switching Diodes Features • • • • Fast Switching Speed High Conductance Electrically Identical to Standard JEDEC RoHS compliant SOD-323 Mechanical Data SOD-323, Plastic Case
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1N4148WS/1N4448WS/BAV16WS
OD-323
OD-323,
MIL-STD-202G,
1N4148WS
BAV16WS
1N4448WS
smd diode sod-323 marking code a2
smd diode A2
smd diode a6
JJ SMD diode
smd diode marking JJ
smd diode code a6
diode SMD MARKING CODE A6
DIODE SMD A6
A2 diode smd
smd diode marking a6
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1N4148WS
Abstract: JJ SMD diode
Text: TWO TERMINALS SMD SWITCHING DIODES 1N4148WS/1N4448WS/BAV16WS Two Terminals Surface Mount Switching Diodes Features • • • • Fast Switching Speed High Conductance Electrically Identical to Standard JEDEC RoHS compliant SOD-323 Mechanical Data SOD-323, Plastic Case
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1N4148WS/1N4448WS/BAV16WS
OD-323
OD-323,
MIL-STD-202G,
1N4148WS
BAV16WS
1N4448WS
1N4148WS
JJ SMD diode
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smd marking JD
Abstract: JJ SMD diode smd diode JD smd diode je smd transistor JE smd diode bas16t smd diode marking JJ smd marking JE smd diode A2 BAV70T
Text: Diodes SMD Type Switching Diode BAS16T;BAW56T BAV70T;BAV99T SOT-523 Unit: mm +0.1 1.6-0.1 +0.1 1.0-0.1 +0.05 0.2-0.05 +0.01 0.1-0.01 +0.05 0.8-0.05 1 +0.15 1.6-0.15 2 0.55 Features 0.35 3 +0.25 0.3-0.05 0.5 +0.1 -0.1 +0.1 0.8-0.1 +0.05 0.75-0.05 1. Base 2. Emitter
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BAS16T
BAW56T
BAV70T
BAV99T
OT-523
BAS16T
BAV70T
smd marking JD
JJ SMD diode
smd diode JD
smd diode je
smd transistor JE
smd diode bas16t
smd diode marking JJ
smd marking JE
smd diode A2
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SMD M1B diode
Abstract: SMD M1B sr smd diode smd marking KM m1b marking smd diode A4 J532 M3FL20U smd diode sr SMD marking "SR"
Text: Super Fast Recovery Diode mtm OUTLINE Single Diode M3FL20U U nit-m m W eight 0.072g Typ Package : M2F Jj V—Y-?—? 200V 3A Feature • /J v P S M D • Small SMD • ß y -rx • trr= 3 5 n s • Low Noise G> \4 • trr=35ns • Low V f=0.95V • <SV f=0.95V
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M3FL20U
i50Hz
SMD M1B diode
SMD M1B
sr smd diode
smd marking KM
m1b marking
smd diode A4
J532
M3FL20U
smd diode sr
SMD marking "SR"
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Untitled
Abstract: No abstract text available
Text: • lililí! Preliminary data IXGH22N50BU1 IXGH22N50BU1S HiPerFAST IGBT with Diode v0E, u, CE sat typ Combi Pack ^fi(typ) 500 V 44 A 2.1 V 55 ns TO-247SMD* Symbol Test Conditions VCES VCOR Jj 25°C to 150°C T,J = 25°C to 150°C; Rb t VGES VQEM Continuous
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IXGH22N50BU1
IXGH22N50BU1S
O-247SMD*
O-247
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diode smd ED 84
Abstract: DSAIH00025343 SMD 437 diode
Text: Silicon Switching Diode 1N4153 DO-35 Glass Package Applications Used in general purpose applications,where a low current controlled forward characteristic and fast switching speed are important. Features DO-35 Glass Package nominal dimensions Six sigma quality
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1N4153
DO-35
LL-34/35
Mil-S-19500/437
4031-B
1N4153
DO-213AA
LL4153)
1N4153UR-1HR,
diode smd ED 84
DSAIH00025343
SMD 437 diode
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s4c diode
Abstract: DIODE SMD MARKING 5C smd ic marking SH
Text: Super Fast Recovery Diode Single Diode mfm OUTLINE Package : STO-220 DF20L60 PyhfLig- ffl Unit-mm Weight 1.5g (Typ) 10.2 600V 20A Feature • SMD 1ralîEE • SMD •trr=70ns • trr=70ns • High Voltage 4.7 Main Use - PFC • PFC(Power Factor Correction)
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STO-220
DF20L60
s4c diode
DIODE SMD MARKING 5C
smd ic marking SH
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10LC20U
Abstract: 10LC20 spacification DIODE smd marking MO 10LC2 smd diode marking JC DF10LC20U
Text: Super Fast Recovery Diode Twin Diode m tm m o u tlin e DF1 0 LC 2 0 U 20 0V 10A Feature • SMD • Low Noise • trr-35ns • SMD • e y -rx • trr-3 5 n s Main Use • D C /D C D y / K - Ï • m m , OA.RBE • a e .F A • • • • Switching Regulator
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DF10LC20U
trr-35ns
STO-220
10LC20U
J532-1)
10LC20
spacification
DIODE smd marking MO
10LC2
smd diode marking JC
DF10LC20U
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Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diode Single Diode D3FP3 U nit I mm Package : 2F Weight 0.16tf Typ ay— K v -y 30V 3A ' Cathode mark Feature • î • £«» • Small SMD • Ultra-Low Vf=0.4V S V f = 0 .4 V Main Use • n y x u - im s it • D C t U ^ lO R f f l
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Untitled
Abstract: No abstract text available
Text: SIEMENS low pow er S T L 8 1 0 0 7 G/N 1500 nm Laser in Receptacle Package Dimensions in inches mm STL81007G Fiber Optics Components Laser Diodes STL81007N FEATURES • Designed for fiber optic networks • Laser diode with multi-quantum well structure • Suitable for bit rates up to 1 Gbit/s
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STL81007G
STL81007N
toTO-18
8B-23
18-pln
fl535t
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Untitled
Abstract: No abstract text available
Text: SIEMENS low pow er m e d iu m p o w e r STL81004/ 81005G/N/Z STM81004/81005G/N/Z Fiber Optics Components User Diodes 1550 nm Laser in Coaxial Package with SM-Pigtail and Optional Connector FEATURES • Designed for fiber optic networks • Laser diode with multi-quantum well structure
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STL81004/
81005G/N/Z
STM81004/81005G/N/Z
Range62)
18-pln
fl535t
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Untitled
Abstract: No abstract text available
Text: Single Diode M1FH3 Schottky Barrier Diode mtmm o u t l in e 30V 1.5A io V - P v - ? C ath o d e m ark CD Feature I Small SMD Super-Low V f= 0 .3 6 V •g e < g V F = 0 .3 6 V Unit-mm Weight 0.027g Typ Package : M1F H92 1 , T y p e No. Main Use • D C /D C
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Untitled
Abstract: No abstract text available
Text: SIEMENS low p o w e r STL51007G/N STM51007G/N MEDIUM POWER 1300 nm Laser in FC or SC Receptacle Package Dimensions in inches mm STL/STM51007G Fiber Optics Components Laser diodes STUSTM51007N FEATURES • Designed for fiber optic networks • Laser diode with Multi-quantum well structure
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STL51007G/N
STM51007G/N
STL/STM51007G
STUSTM51007N
18-pln
fl535t
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Untitled
Abstract: No abstract text available
Text: SI EM ENS STL51004/51005G/N/Z m e d iu m p o w e r STM51004/51005G/N/Z HIGH POWER STH51004/51005G/N/Z LOW p o w e r Fiber Optics Com ponents La ser D iode s 1300 nm Laser in Coaxial Package with SM-Pigtail FEATURES • Designed for fiber optic networks • Laser diode with Multi-quantum well structure
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STL51004/51005G/N/Z
STM51004/51005G/N/Z
STH51004/51005G/N/Z
SB-17
0235b05
Mo022
18-pln
fl535t
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l30 diode smd
Abstract: JJ SMD diode smd diode E1
Text: SIEMENS STH61008G/N/Z 1300 nm DFB Laser in Coaxial Package with SM-Pigtail, with Optical Isolator for 2.5 Gbit/s Application Dimensions in inches mm .676(17.2) .597(15.2) max 0 .236 (6.0) Pinning MD CD LD 1.77 max. (45.0) Fiber Optics Components Laser Diodes
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STH61008G/N/Z
STM-16)
18-pln
fl535t
l30 diode smd
JJ SMD diode
smd diode E1
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SFH 263
Abstract: No abstract text available
Text: SIEMENS STH61004G/N/Z STH61005G/N/Z Fiber Optics Components Laser Diodes 1300 nm DFB Laser in Coaxial Package with SM-Pigtail, 622 MBit/s Long Reach FEATURES Maximum Ratings • Designed for use in high-speed and long-haul fiber optic neworks Output power ratings refer to SM fiber outport. The operating tem
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STH61004G/N/Z
STH61005G/N/Z
61004G/N/Z
61005G/N/Z
76K130
18-pln
023SbQS
SFH 263
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1NS711
Abstract: ll5711 BAS70 MELF BKC Semiconductors
Text: SOT-23 Plastic SMD Schottky Diodes * for duals add Applications 04,05 & 06 suffix Excellent MOS protection. Efficient portable system battery isolator. Used in small fast motor applications such as CD ROMs and hard disk drives. Features • • • • •
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OT-23
DO-35
BAS70
BAS70-06
300pS
300pSecs
LL5711)
1NS711)
1NS711
ll5711
BAS70 MELF
BKC Semiconductors
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Untitled
Abstract: No abstract text available
Text: SCHOTTKY BARRIER DIODE C20T03QL C20T03QL-11A 20A/30V FEATURES o | SQUARE-PAK | TO-263AB SMD P ackaged in 24mm T ape and Reel : C 2 0 T -Q L O Tabless TO-220 : C 20T-Q L-11A ODual Diodes—Cathode Common OLow Forw ard V oltage Drop o High Surge Capability
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C20T03QL
C20T03QL-11A
0A/30V
O-263AB
O-220
20T-Q
L-11A
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JJ SMD diode
Abstract: diode smd marking WP smd diode marking JJ 6 pin smd diode 140KW 6402W
Text: SIEMENS BAR 64-02W Silicon PIN Diode • High voltage current controlled RF resistor for RF attenuator and switches • Frequency range above 1 MHz • Low resistance and short carrier lifetime • Very low inductance • For frequencies up to 3 GHz • Extremely small plastic SMD package
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4-02W
Q62702-A1215
SCD-80
100MHz
JJ SMD diode
diode smd marking WP
smd diode marking JJ
6 pin smd diode
140KW
6402W
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Untitled
Abstract: No abstract text available
Text: SIEMENS K 0 M 2 1 08 5 x 5 Silicon PIN Photodiode Array FEATURES • Suitable for use in the visible light and near infrared range • Low noise • Short switching time typ. 10 ns • Every single diode can be activated D im ensions in inch e s (m m ) Chip position Epoxy resin transparent
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41IAI
18-pln
fl535t
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