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    JE 3055 Search Results

    JE 3055 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    RJP3055DPP-00#T2 Renesas Electronics Corporation Insulated-Gate Bipolar Transistors (IGBT) Visit Renesas Electronics Corporation
    2SK3055-AZ Renesas Electronics Corporation Switching N Channel MOSFET, MP-45F, /Bag Visit Renesas Electronics Corporation
    5T30553DCG8 Renesas Electronics Corporation Low Skew 1 to 4 Clock Buffer Visit Renesas Electronics Corporation
    5T30553DCGI Renesas Electronics Corporation Low Skew 1 to 4 Clock Buffer Visit Renesas Electronics Corporation
    5T30553DCGI8 Renesas Electronics Corporation Low Skew 1 to 4 Clock Buffer Visit Renesas Electronics Corporation
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    JE 3055 Price and Stock

    STMicroelectronics MJE3055T

    TRANS NPN 60V 10A TO220
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    DigiKey MJE3055T Tube 450 1
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    Avnet Americas MJE3055T Tube 12,000 45 Weeks 1,000
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    Mouser Electronics MJE3055T 3,257
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    Newark MJE3055T Bulk 6,049 1
    • 1 $1.1
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    STMicroelectronics MJE3055T 3,257 1
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    Bristol Electronics MJE3055T 10
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    TME MJE3055T 276 1
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    ComSIT USA MJE3055T 775
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    Avnet Silica MJE3055T 5,450 15 Weeks 50
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    EBV Elektronik MJE3055T 3,050 15 Weeks 50
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    onsemi MJE3055T

    TRANS NPN 60V 10A TO220
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    Bristol Electronics MJE3055T 53
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    onsemi MJE3055TG

    TRANS NPN 60V 10A TO220
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    DigiKey MJE3055TG Tube 1
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    Avnet Americas MJE3055TG Bulk 15 Weeks, 4 Days 1
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    MJE3055TG Tube 11 Weeks 1,900
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    Mouser Electronics MJE3055TG 12,915
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    Newark MJE3055TG Bulk 184 1
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    Rochester Electronics MJE3055TG 363 1
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    Chip 1 Exchange MJE3055TG 50
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    Avnet Asia MJE3055TG 11 Weeks 1,900
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    Avnet Silica MJE3055TG 1,850 12 Weeks 50
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    Chip1Stop MJE3055TG Tube 208
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    EBV Elektronik MJE3055TG 13 Weeks 50
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    Master Electronics MJE3055TG 1,900
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    Wuhan P&S MJE3055TG 181 1
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    onsemi MJE3055TTU

    TRANS NPN 60V 10A TO220-3
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    Flip Electronics MJE3055TTU 300
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    Micro Commercial Components MJE3055-BP

    TRANS NPN 60V 10A TO220AB
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    JE 3055 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    fuse smd code ud

    Abstract: kc-1206 EB smd code marking tantalum capacitor cf750 2824 footprint dimension JK-110 CAP SMD 2.2uF 50V 10 CERAMIC X7R 0603 TANTALUM smd capacitor 685 35K 1808 footprint IPC Commercial "L", SnPb Termination, X7R Dielectric, 6.3 – 250 VDC (Commercial Grade)
    Text: Surface Mount Multilayer Ceramic Chip Capacitors Commercial Grade Surface Mount Multilayer Ceramic Chip Capacitors One world. One KEMET. Surface Mount Multilayer Ceramic Chip Capacitors Commercial Grade Table of Contents Page Why Choose KEMET. 4


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    PDF 15bis fuse smd code ud kc-1206 EB smd code marking tantalum capacitor cf750 2824 footprint dimension JK-110 CAP SMD 2.2uF 50V 10 CERAMIC X7R 0603 TANTALUM smd capacitor 685 35K 1808 footprint IPC Commercial "L", SnPb Termination, X7R Dielectric, 6.3 – 250 VDC (Commercial Grade)

    capacitor 226 35K 022 electrolytic

    Abstract: 3216 footprint IPC TANTALUM smd capacitor 685 35K KC-1206 BB GP 031 smd LD33 capacitor 476 35K 026 2824 footprint dimension MIL-STD-1285 Commercial "L", SnPb Termination, X7R Dielectric, 6.3 – 250 VDC (Commercial Grade)
    Text: Surface Mount Multilayer Ceramic Capacitors Commercial Grade Surface Mount Multilayer Ceramic Chip Capacitors One world. One KEMET. Surface Mount Multilayer Ceramic Capacitors Commercial Grade Table of Contents Page Why Choose KEMET. 4


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    PDF 15bis capacitor 226 35K 022 electrolytic 3216 footprint IPC TANTALUM smd capacitor 685 35K KC-1206 BB GP 031 smd LD33 capacitor 476 35K 026 2824 footprint dimension MIL-STD-1285 Commercial "L", SnPb Termination, X7R Dielectric, 6.3 – 250 VDC (Commercial Grade)

    2955T

    Abstract: JE3055T 3055t JE3055 je 3055t JE2955T AN415A
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP M JE 2955T* Complementary Silicon Plastic Power Transistors UPI! M JE 3055T* . . . designed for use in general-purpose amplifier and switching applications. • • *MotoroU Preferred Dtvlct DC Current Gain Specified to 10 Amperes


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    PDF 2955T* 3055T* MJE3055T, MJE2955T MJE2955T 2955T JE3055T 3055t JE3055 je 3055t JE2955T AN415A

    RTM 866 - 480

    Abstract: SAK 110 TAA775G ITT TCA 700 Y SAJ 220 SG 2368 ITT 90 38 TCA 700 Y SAJ110 TCA 430 taa790
    Text: Halbleiter­ bauelemente 1972/73 INTERMETALL H albleiterwerk der Deutsche ITT Industries GmbH ITT Alphabetisches Typenverzeichnis Typ S eite Typ S eite Typ Seite 1 N 914 42 2 N 3055 38 BB 121 1 N914A 1 N914B 1 N 3604 42 42 42 2 N 3962 33 BB 122 2 N 3963 2 N 3964


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    PDF N914A N914B RTM 866 - 480 SAK 110 TAA775G ITT TCA 700 Y SAJ 220 SG 2368 ITT 90 38 TCA 700 Y SAJ110 TCA 430 taa790

    diode D45C

    Abstract: JE 800 transistor L146 IC BD800
    Text: STYLE 1: PIN 1. BASE 2. COLLECTOR CASE 340B-03 R e s is tiv e S w itc h in g Ic C o n t Am ps V C E O s u s V o lts M ax M in 8 500 700 f*FE M in /M a x @ lc |XS tf ps Amp M ax M ax M JF16006A 5 min 8 2.5 0.25 5 B U 1008A F 3 min 3 min 4.5 4.5 8* 8* 0.5*


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    PDF 340B-03 JF16006A JF10012# 100/12k JF16212* JF16018* JF16206 D44VH10 D45VH diode D45C JE 800 transistor L146 IC BD800

    Katalog tesla tranzistor

    Abstract: KD502 KD3055 KD617 KU607 KU612 Tesla katalog KD602 kd 617 kd607
    Text: T E U f • - f l J P i A . f E L E K T R O N IC K É € K O N C E R N S O U C Á S T K Y R O Z N O V Kremikové vÿkonové tranzistory fill* KC31S VOO331 ft* » .* K03773 T30 32> U U * K0336 VQ0321 I I I IA If« » KOWt MÍO 32' K0338 VQ0 3SI ic c a f li


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    PDF KC31S K03773 K0336 K0338 VQ0321 C22fc KUY12 KUV12 Katalog tesla tranzistor KD502 KD3055 KD617 KU607 KU612 Tesla katalog KD602 kd 617 kd607

    JE2955

    Abstract: JE3055 mje3055 127 case data MJE295ST MJE2955 JE2955T JE3055T lm 3904 2955T TO-225AB
    Text: MOTOROLA SC 12E 0 | L3b7HS4 □Qâ53Mc1 1 | XSTRS/R F r-3 3 - 5 PN P MOTOROLA r - î î - a i MJE2955, MIE2955T SEMICONDUCTOR NPN TECHNICAL DATA MJE3055, MJE3055T 10 A M P E R E COM PLEM ENTARY SILICO N PLASTIC POWER TRAN SISTO RS . . . designed for use in general-purpose amplifier and switching


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    PDF MJE2955, MIE2955T MJE3055, MJE3055T JE3055, JE2955 O-225AB JE3055T 2955T O-22QAB JE3055 mje3055 127 case data MJE295ST MJE2955 JE2955T JE3055T lm 3904 TO-225AB

    2N5979

    Abstract: 2n5978 2N5985 2N5984 2SB585 2SB587 2SB588 2SB5 2SB568 st 2n3055
    Text: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English


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    PDF Te-25 2N5983fflS 2N5984 2N5985 2N6055 2SB585 2N6056tsa 25B586 2N6O57 2SB587 2N5979 2n5978 2N5985 2N5984 2SB587 2SB588 2SB5 2SB568 st 2n3055

    Untitled

    Abstract: No abstract text available
    Text: GEC P L E S S E Y S E M I C O N D U C T O R S _ _ 3055-1.0 SL486 INFRA RED REMOTE CONTROL PREAMPLIFIER T h e SL486 is a h ig h g ain p re a m p lifie r de sig n e d to fo rm an in te rfa c e betw een an in fra -re d re ce ivin g d io d e and the d ig ita l


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    PDF SL486 SL486

    bpx28

    Abstract: Germanium diode OA 182 TAA920 fy sot 143 BSV57B AC187K BPW14 BF194 AD 161 BPX34
    Text: Halbleiter TELE FUN KEN Übersicht Sem iconductor survey 1972/1973 B2/V.3.20/0872 D ie s e Liste soll die W ahl g ee ig n e te r H albleiter-Typen fü r die verschiedenen A n w en du ng szw ecke e rleich te rn . Z ur besseren Ü b e rs ic h t sind nur die w e se ntlich en D aten


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    MV601

    Abstract: stabiliser circuit diagram gyrator Plessey sl486 SL486 lowvoltageoperation
    Text: GEC PLESSEY ISE M IC O N D U C T O R S t 3055-1 0 SL486 INFRA RED REMOTE CONTROL PREAMPLIFIER T h e SL486 is a h ig h gain p re a m p lifie r de sig n e d to fo rm an inte rfa c e betw een an in fra -re d re ceiving d io d e and the d ig ita l in p u t o f re m o te c o n tro l re ceiving circu its. T h e d evice


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    PDF SL486 SL486 MV601 200kn stabiliser circuit diagram gyrator Plessey sl486 lowvoltageoperation

    4233A

    Abstract: 535x 184 324 DIODE 2N5383 2N3055C
    Text: Contran ÄTTM,© STAND ARD PART LIST [continued] Devices. Inc STANDARD DIODE CHIP SELECTIONS PART No. Vr MIN. VO LTS Vp@ M AX. VO LTS If A M PS. trr N SE C . PA G E No. 5 31X C 003 531X C 004 532X C 001 532X C 002 532X C 003 100 400 50 80 100 1.3 1.8


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    PDF 533XCD01 534XCD02 535XCQ01 2N1063 2N107Û 4233A 535x 184 324 DIODE 2N5383 2N3055C

    circuit diagram of 2N3055 series voltage regulator

    Abstract: 2N3055 diagram with power supply 2N3055 series voltage regulator 2n3055 circuit diagram 2N3055 TO-220 N2N3055 2N3055 TRANSISTOR 2n3055 voltage regulator L7912ACV 2N3055 power supply circuit
    Text: L7900AC Series LINEAR INTEGRATED CHRCUITS PRELIM IN A R Y DATA ± 2% NEGATIVE VOLTAGE REGULATORS • O UTPUT C U R R E N T UP TO 1.5A • O U T P U T V O L T A G E S O F -5 ; -5 .2 ; - 8 ; - 1 2 ; -1 5 ; -1 8 ; -2 0 ; -2 4 V • • • T H E R M A L O V E R LO A D PROTECTION


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    PDF L7900AC L7900 T0-220 L7800 1IM4001 2N3055 2N3055 L7952AC circuit diagram of 2N3055 series voltage regulator 2N3055 diagram with power supply 2N3055 series voltage regulator 2n3055 circuit diagram 2N3055 TO-220 N2N3055 2N3055 TRANSISTOR 2n3055 voltage regulator L7912ACV 2N3055 power supply circuit

    2T6551

    Abstract: information applikation information applikation mikroelektronik mikroelektronik Heft KD 605 KT825 transistoren KT 960 A Mikroelektronik Information Applikation KT827 mikroelektronik DDR
    Text: im S l^ is B le l- c t s n o r iil- c Information Informations- und Applikationshefte „ M IK R O E L E K T R O N IK " Bisher ersch ien en : Heft Heft Heft Heft Heft Heft Heft 1: 2: 3: 4: 5: 6: 7: A 210 und 211 A 301 A 290 A 202 A 244 und A281 Importbauelem ente RGW „IS"


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    TRANSISTOR tip122 CHN 949

    Abstract: E2955T BD706 TU F 13003 13003 Transistor NPN Power TO 126 transistor E2955T construction linear amplifier 2sc1945 LA 4301 8d679 transistor bf 175
    Text: A lph an u m eric Index and C ross R eference 1 S elector G uide 2 D ata Sheets 3 Leadform and • M ounting H ardw are m A pp lications Literature 5 Chipscretes, Designers’, Duowatt, EpiBase, PowerBase, PowerTap, SUPERBRIDGES, Surmetric, Switchmode, Thermopad, TMOS, Thermowatt, Unibloc, and Uniwatt are trademarks of Motorola Inc.


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    PDF 38v01 TRANSISTOR tip122 CHN 949 E2955T BD706 TU F 13003 13003 Transistor NPN Power TO 126 transistor E2955T construction linear amplifier 2sc1945 LA 4301 8d679 transistor bf 175

    Thyristor Xo 602 MA

    Abstract: 5A/1/Thyristor Xo 602 MA ah 90360 1N126 2N339 2N3201 transistor bf 175 germanium transistor epitaxial mesa 2N241
    Text: GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS This chapter is primarily devoted to condensed specifications of General Electric’s thyristors, thyristor assemblies, trigger devices, and


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    3055 rle

    Abstract: VEB M ik ro e le k tro n ik U1600 Scans-048 BV EI 3055 M9152 DSAGER00027 0402092 st7255
    Text: pz l f i N e tz tra n sfo rm a to re n N e tz tra n s fo rm a to re n w e rd e n in den ve rsch ie d e n ste n A u s fü h ru n g e n g e fe rtig t, so daß w i r a u f G ru n d des u m fa n g re ic h e n P ro d u k tio n s p ro g ra m m e s in d e r Lage sin d , h oh en


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    PDF 2x300 2x310 3055 rle VEB M ik ro e le k tro n ik U1600 Scans-048 BV EI 3055 M9152 DSAGER00027 0402092 st7255

    diode SY 192

    Abstract: KP902A Datenblattsammlung Halbleiterbauelemente DDR VEB mikroelektronik transistor kp mikroelektronik datenblattsammlung "halbleiterwerk frankfurt" KP306a mikroelektronik DDR
    Text: . • M ' - l ä r o u jk 1 U ’i m - í!Í'.>. "lA T T S A M M . 'Q elektronische Bauelemente IWT iO 1/87 I# %# S Die vorliegenden Datenblätter dienen nur zur Information« Sie beinhalten Informationen über Halbleiterbauelemente des in den Listen elektronischer Bauelemente eingestuften Sortiments«


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    L123 regulator

    Abstract: 3055 transistor 2n 3055 transistor l123 L123 voltage J1306 10-17V RS 306-005
    Text: Issued J u ly 1983 m Data Library J1306 Voltage regulators L123 metal can L723 DIL Stock numbers 305*440 and 306-005 Absolute maximum ratings TO-100 DIL 40V Continuous voltage from V+ t o V - 40V Input/output voltage differential 150mA M axim um output current


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    PDF J1306 O-100 800mW 150mA 660mW -19-22V 9-22V) R28k2H R37k5U 500pf L123 regulator 3055 transistor 2n 3055 transistor l123 L123 voltage J1306 10-17V RS 306-005

    Halbleiterbauelemente DDR

    Abstract: diode BZW 70-20 VEB mikroelektronik Datenblattsammlung mikroelektronik DDR aktive elektronische bauelemente ddr mikroelektronik datenblattsammlung mikroelektronik applikation information applikation mikroelektronik "halbleiterwerk frankfurt"
    Text: 9 ¡M i n M W V S I I V I S N l l ¥ a Die vorliegenden Datenblätter dienen als Informationsmaterial für Geräteentwickler und Konstrukteure, Sie beinhalten Informationen über Halbleiterbauelemente des in "den Listen elektronischer Baulemente eingestuften Sortiments.


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    PDF V4019 DDR-1035 Halbleiterbauelemente DDR diode BZW 70-20 VEB mikroelektronik Datenblattsammlung mikroelektronik DDR aktive elektronische bauelemente ddr mikroelektronik datenblattsammlung mikroelektronik applikation information applikation mikroelektronik "halbleiterwerk frankfurt"

    SP802512H-03

    Abstract: SP802512M-03 BP802524M-03 SP802524M-03 BP802524H-03 BP8-02 sp802524h SP8025121-03 80X80X25 SP802524H-03
    Text: DC 8025-03 SIZE : 80x80x25m m 3.15“x3.15"x0.98M C O N S T R U C T IO N : G la s s fib e r r e in fo r c e d p lastic: Im p eller a n d h o u sin g PBT a r e UL 9 4 V -0 ra tin g O P E R A T IN G TEM PERATURE : Ball b e a rin g - 30*0 t o + 75*C S le e v e b e a rin g


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    PDF 80x80x25mm 8P802524L-03 SP802524L-03 BS802524L-03 BP802524M-03 SP802524M-03 8S802524M-03 BP802524H-03 SP802524H-03 8S802524H-03 SP802512H-03 SP802512M-03 BP8-02 sp802524h SP8025121-03 80X80X25

    BD512 mosfet

    Abstract: itt transistoren Relais ITT halbleiterwerk transistor 2N 3055 ITT Intermetall Leuchtdiode CQY 40 transistor BD 522 schaltregler BD512
    Text: VMOS Transistoren Eigenschaften und Schaltungsbeispiele 6240-09-2 D INTERMETALL Halbleiterwerk der Deutsche ITT Industries GmbH VMOS-Transistoren Eigenschaften und Schaltungsbeispiele Zusammengestellt von folgenden Mitarbeitern der ITT Semiconductors Gruppe


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    3055 power transistor

    Abstract: voltage regulator IC 723 723p
    Text: Precision Negative Regulator SG1511 1SG3511 Description T h is m o n o lith ic v o lta g e re g u la to r is d e sig n e d fo r n eg ative Absolute M axim um Ratings a p p lic a tio n s as a c o m p le m e n t to th e p o p u la r SG 723 In p u t v o lta g e


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    PDF SG1511 1SG3511 3055 power transistor voltage regulator IC 723 723p

    mje3055

    Abstract: mje3055 data MJE3055K 2 N MJE3055 transistor MJE3055 MJE3055 TO-126 CASE 90-05 MJE2955K "case 90-05" 1511 BA
    Text: MJE3055 SILICON MJE3055K 10 AMPERE POWER TRANSISTORS HIGH POWER NPN SILICON TRANSISTORS . . . designed for use m general-purpose amplifier and switching applitions. NPN SILICON 6 0 VOLTS 90 WATTS • DC Current Gain Specified to 10 Amperes • High Current Gain — Bandwidth Product —


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    PDF MJE3055 MJE3055K MJE2955, MJE2955K MJE3055 MJE3055K MJE30S6, TC-28Â mje3055 data 2 N MJE3055 transistor MJE3055 MJE3055 TO-126 CASE 90-05 MJE2955K "case 90-05" 1511 BA