IXRH 50N120 Search Results

IXRH 50N120 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
IXRH50N120		IXYS	1200V IGBT with reverse blocking capability		Original	PDF

IXRH 50N120 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
50N100 Abstract: 50N120 IXRH 50N120 bi-directional switches IGBT induction heat resonant D-68623 Text: Advanced Technical Information IXRH 50N120 VCES = 1000 / 1200 V IXRH 50N100 IC25 = 60 A IGBT with Reverse Blocking capability VCE sat = 2.5 V tf = 75 ns C TO-247 AD G G C E C (TAB) E G = Gate, E = Emitter, C = Collector, TAB = Collector Features IGBT Symbol	Original	PDF	50N120 50N100 O-247 50N120 50N100 IXRH 50N120 bi-directional switches IGBT induction heat resonant D-68623
Untitled Abstract: No abstract text available Text: Advanced Technical Information IXRH 50N60 VCES = 600/1200 V IXRH 50N120 IC90 = 50 A High Voltage RBIGBT Forward and Reverse Blocking IGBT VCE sat = 2.6 V tfi = 300 ns N-Channel, Enhancement Mode C TO-247 AD G G C E C (TAB) E G = Gate, E = Emitter, Conditions	Original	PDF	50N60 50N120 O-247 D-68623
40N120 Abstract: IXRH 50N120 40N120 DATASHEET 50N120 bi-directional switches IGBT induction heating D-68623 Text: IXRH 40N120 Advanced Technical Information VCES = 1200 V IC25 = 55 A VCE sat = 2.2 V IGBT with Reverse Blocking capability C TO-247 AD G C E G E G = Gate, E = Emitter, C = Collector, TAB = Collector Features IGBT Conditions VCES TVJ = 25°C to 150°C Maximum Ratings	Original	PDF	40N120 O-247 40N120 IXRH 50N120 40N120 DATASHEET 50N120 bi-directional switches IGBT induction heating D-68623
50N60 Abstract: 50N100 50n80 40N160 9N160G 50N6 Text: BIMOSFET High Speed Types in 1400 und 1600 V ► New •e. A *C90 Tc = 25 °C Tc = 90 °C Gate drive V í-H < r o" 1 V CES V Type A □ ^1 tvp ns Package style 6 z Outlines on page 91-100 ri> G = Gate, E = Emitter, LL C = Collector thJC K/W T ,= 125 °C	OCR Scan	PDF	9N140G 15N140 20N140 40N140 9N160G 15N160 20N160 50N60 50N100 50n80 40N160 50N6