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    IXYS Corporation IXGH20N120BD1

    IGBT 1200V 40A 190W TO247
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    IXGH 20N120BD1 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXGH 20N120BD1 IXYS High Voltage IGBT with Diode Original PDF
    IXGH20N120BD1 IXYS IGBT Discretes Original PDF

    IXGH 20N120BD1 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    igbt induction cooker

    Abstract: induction heating cooker IXGH20N120BD1
    Text: High Voltage IGBT with Diode VCES IC25 VCE sat IXGH 20N120BD1 IXGT 20N120BD1 tfi(typ) Preliminary Data Sheet Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30


    Original
    PDF 20N120BD1 IC110 O-268 0-12A/DSEC 0-12A igbt induction cooker induction heating cooker IXGH20N120BD1

    Untitled

    Abstract: No abstract text available
    Text: High Voltage IGBT with Diode VCES IC25 VCE sat IXGH 20N120BD1 IXGT 20N120BD1 tfi(typ) Preliminary Data Sheet Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30


    Original
    PDF 20N120BD1 IC110 O-268 0-12A/DSEC 0-12A

    Untitled

    Abstract: No abstract text available
    Text: Advanced Technical Data High Voltage IGBT with Diode VCES IC25 VCE sat IXGH 20N120BD1 IXGT 20N120BD1 = 1200 = 40 = 3.4 = 160 tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES


    Original
    PDF 20N120BD1 20N120BD1 O-247AD O-268 O-247AD/TO-268

    Untitled

    Abstract: No abstract text available
    Text: High Voltage IGBT with Diode VCES IC25 VCE sat IXGH 20N120BD1 IXGT 20N120BD1 tfi(typ) Preliminary Data Sheet Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30


    Original
    PDF 20N120BD1 20N120BD1 IC110 O-247AD O-268 O-247) Fea140

    IXGH20N120BD1

    Abstract: IXGH 20N120BD1
    Text: High Voltage IGBT with Diode VCES IC25 VCE sat IXGH 20N120BD1 IXGT 20N120BD1 tfi(typ) Preliminary Data Sheet Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30


    Original
    PDF 20N120BD1 20N120BD1 IC110 O-247AD O-268 O-247) Fea140 IXGH20N120BD1 IXGH 20N120BD1