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International Rectifier IRFY340C Trans MOSFET N-CH 400V 8.7A 3-Pin(3+Tab) TO-257AA
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Onlinecomponents.com	IRFY340C		115			1 $158.65 10 $158.65 100 $158.65 1000 $158.65 10000 $158.65	Buy Now
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IRFY340 Datasheets (14)

Part	Manufacturer	Description	Datasheet Type	PDF
IRFY340	International Rectifier	HEXFET Power Mosfet	Original	PDF
IRFY340	Semelab	N-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS	Original	PDF
IRFY340	International Rectifier	HEXFET Transistors	Scan	PDF
IRFY340	International Rectifier	Government / Space Products - High Reliability Power MOSFETS	Scan	PDF
IRFY340C	International Rectifier	HEXFET Power Mosfet	Original	PDF
IRFY340C	Semelab	N-Channel MOSFET in a Hermetically Sealed TO257AB Metal Package	Original	PDF
IRFY340C	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
IRFY340CM	International Rectifier	HEXFET Power Mosfet	Original	PDF
IRFY340CM	International Rectifier	HEXFET Power Mosfet	Original	PDF
IRFY340CM	International Rectifier	Power MOSFET	Original	PDF
IRFY340CM	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
IRFY340M	International Rectifier	400V, N-CHANNEL HEXFET MOSFET TECHNOLOGY	Original	PDF
IRFY340M	International Rectifier	Government / Space Products - High Reliability Power MOSFETS	Scan	PDF
IRFY340M	International Rectifier	HEXFET Transistors	Scan	PDF

IRFY340 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
IRFY340C Abstract: IRFY340CM MOSFETs. Rectifier Text: Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD 9.1290B IRFY340CM HEXFET POWER MOSFET N-CHANNEL Product Summary 400 Volt, 0.55Ω HEXFET HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance.	Original	PDF	1290B IRFY340CM IRFY340C IRFY340CM MOSFETs. Rectifier
IRFY340 Abstract: IRFY340C IRFY340CM IRFY340M Text: PD - 94189 POWER MOSFET THRU-HOLE TO-257AA IRFY340,IRFY340M 400V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID Eyelets IRFY340 0.55 Ω 8.7A Glass IRFY340M 0.55 Ω 8.7A Glass HEXFET® MOSFET technology is the key to International	Original	PDF	O-257AA) IRFY340 IRFY340M IRFY340 IRFY340, O-257AA IRFY340C IRFY340CM IRFY340M
IRFY340 Abstract: 87A DIODE Text: IRFY340 MECHANICAL DATA N–CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS Dimensions in mm inches 4.70 5.00 0.70 0.90 3.56 Dia. 3.81 BVDSS ID RDS(on) 10.41 10.92 13.39 13.64 16.38 16.89 10.41 10.67 12.70 19.05 1 2 3 400V 8.7A 0.55Ω FEATURES • 0.89 1.14	Original	PDF	IRFY340 O-220 O-220M O-257AB) IRFY340 87A DIODE
IRFY340 Abstract: SHD2264 SHD226404 Text: SENSITRON SEMICONDUCTOR SHD226404 TECHNICAL DATA DATA SHEET 213, REV. B Formerly Part Number SHD2264 HERMETIC POWER MOSFET N-CHANNEL FEATURES: • 400 Volt, 0.55 Ohm, 6.9 A MOSFET • Low RDS on • Equivalent to IRFY340 Series • Add a C after SHD for ceramic eyelets	Original	PDF	SHD226404 SHD2264 IRFY340 SHD2264 SHD226404
Untitled Abstract: No abstract text available Text: IRFY340 MECHANICAL DATA N–CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS Dimensions in mm inches 4.70 5.00 0.70 0.90 3.56 Dia. 3.81 BVDSS ID RDS(on) 10.41 10.92 13.39 13.64 16.38 16.89 10.41 10.67 12.70 19.05 1 2 3 400V 8.7A 0.55 FEATURES • 0.89 1.14 •	Original	PDF	IRFY340 O-220 O-220M O-257AB)
Untitled Abstract: No abstract text available Text: PD - 91290C POWER MOSFET THRU-HOLE TO-257AA IRFY340C,IRFY340CM 400V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number R DS(on) ID Eyelets IRFY340C 0.55 Ω 8.7A Ceramic IRFY340CM 0.55 Ω 8.7A Ceramic HEXFET® MOSFET technology is the key to International	Original	PDF	91290C O-257AA) IRFY340C IRFY340CM IRFY340C IRFY340C, O-257AA
IRFY340C Abstract: No abstract text available Text: IRFY340C Dimensions in mm inches . N-Channel MOSFET in a Hermetically sealed TO257AB Metal Package. 10.6 (0.42) 4.6 (0.18) 10.6 (0.42) 3.70 Dia. Nom 1.5(0.53) 16.5 (0.65) 0.8 (0.03) 1 2 3 12.70 (0.50 min) VDSS = 400V ID = 8.7A RDS(ON) = 0.55Ω Ω 1.0 (0.039)	Original	PDF	IRFY340C O257AB O257AB O220M) 13-Sep-02 IRFY340C
IRFY340C Abstract: IRFY340CM Text: PD - 91290C POWER MOSFET THRU-HOLE TO-257AA IRFY340C,IRFY340CM 400V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number R DS(on) ID Eyelets IRFY340C 0.55 Ω 8.7A Ceramic IRFY340CM 0.55 Ω 8.7A Ceramic HEXFET® MOSFET technology is the key to International	Original	PDF	91290C O-257AA) IRFY340C IRFY340CM IRFY340C IRFY340C, O-257AA IRFY340CM
IRFY340C Abstract: IRFY340CM Text: Provisional Data Sheet No. PD 9.1290B IRFY340CM HEXFET POWER MOSFET N-CHANNEL Product Summary 400 Volt, 0.55Ω HEXFET HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance.	Original	PDF	1290B IRFY340CM IRFY340C IRFY340CM
irfy340 Abstract: No abstract text available Text: SENSITRON SEMICONDUCTOR SHD226404 TECHNICAL DATA DATA SHEET 213, REV. A Formerly Part Number SHD2264 HERMETIC POWER MOSFET N-CHANNEL FEATURES: 400 Volt, 0.55 Ohm, 6.9 A MOSFET Low RDS on Equivalent to IRFY340 Series Add a C after SHD for ceramic eyelets	Original	PDF	SHD2264 SHD226404 IRFY340 O-257
IRFY340 Abstract: No abstract text available Text: IRFY340 MECHANICAL DATA Dimensions in mm inches 4.70 5.00 0.70 0.90 3.56 Dia. 3.81 VDSS ID(cont) RDS(on) 10.41 10.92 13.39 13.64 10.41 10.67 16.38 16.89 N–CHANNEL POWER MOSFET FOR HI–REL APPLICATIONS 1 2 3 400V 6.9A Ω 0.55Ω 12.70 19.05 FEATURES 0.89	Original	PDF	IRFY340 300ms, IRFY340
IRFY340 Abstract: SHD2264 SHD226404 Text: SENSITRON SEMICONDUCTOR SHD226404 TECHNICAL DATA DATA SHEET 213, REV. A Formerly Part Number SHD2264 HERMETIC POWER MOSFET N-CHANNEL FEATURES: 400 Volt, 0.55 Ohm, 6.9 A MOSFET Low RDS on Equivalent to IRFY340 Series Add a C after SHD for ceramic eyelets	Original	PDF	SHD226404 SHD2264 IRFY340 250mA SHD2264 SHD226404
IRF460 Abstract: SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065 Text: Aerospace and Defense Products Short Form Catalog 2007 Welcome to the Aerospace and Defense Products Short Form Catalog. Inside is an overview of our product line including product specific information. To learn more, visit our web site at irf.com where you will find technical documents, data sheets for all products, application notes, design tips, technical papers, application-specific information,	Original	PDF	30am-5 44-0-1737-2com DB8029C IRF460 SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065
IRFM9034 Abstract: irh7c50se IRFM460 irhy IRFE310 international rectifier p JANSR2N7261 Text: International Rectifier Government and Space Products BVDSS Part Number Channel V RDS(on) (Ω) PD @ TC = 25°C ID @ T =100°C C (A) ID @ T =25 C (A) Total Dose Rating Rads (Si) (W) Fax-on-Demand HEXFET Power MOSFETs to view a data sheet, click on the part number	Original	PDF	IRHE7110 IRHE7130 IRHE7230 IRHE8110 IRHE8130 IRHE8230 IRHE9130 IRHE9230 IRHG7110 IRHG6110 IRFM9034 irh7c50se IRFM460 irhy IRFE310 international rectifier p JANSR2N7261

SHD239608 Abstract: shd239606 Text: SENSITRON SEMICONDUCTOR 2000 CATALOG HERMETIC POWER MOSFETs N-CHANNEL, TO-254, TO-257 TYPE NUMBER DRAIN TO SOURCE BREAKDOWN VOLTAGE V (BR)DSS Volts CONTINUOUS DRAIN CURRENT ID MAXIMUM POWER DISSIPATION PD STATIC DRAIN TO SOURCE ON RESISTANCE RDS(on) MAXIMUM	Original	PDF	O-254, O-257) SHD226413 SHD226401 SHD226402 SHD226403 SHD226404 SHD226405 SHD226406 SHD226407 SHD239608 shd239606
10RIA10 Abstract: HFA40HF120 irfm9034 10RIA100 10RIA120 10RIA20 10RIA40 10RIA60 JANSR2N7261 70HF Text: Index International Rectifier Government and Space Products Level of Quality Part Number Rectifiers Voltage Current CECC Issue Issue Assessment and CECC V (A) Specs Number Date 50 000 Screen Level Options Fax-on-Demand CECC-Qualifed, Europe Mfg. in Italy	Original	PDF	DO-203AA HFA40HF120 HFA40HF60 O-254AA HFA35HB120 HFA35HB120C HFA35HB60 HFA35HB60C O-258AA HFA45HC120C 10RIA10 HFA40HF120 irfm9034 10RIA100 10RIA120 10RIA20 10RIA40 10RIA60 JANSR2N7261 70HF
IRHNA57064SCS Abstract: IRHNJ597230SCS IRHNJ9130SCS IRHG6110SCS IRHY7434 IRHE57130SCS 8CLJQ045SCV IRHNJ57034SCS irfy9230 35CLQ045SCS Text: PD - 94046B RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-0.5 IRHNJ597230 200V, P-CHANNEL 4# TECHNOLOGY c Product Summary Part Number Radiation Level IRHNJ597230 100K Rads (Si) IRHNJ593230 300K Rads (Si) RDS(on) 0.505Ω 0.505Ω ID -8.0A -8.0A SMD-0.5	Original	PDF	94046B IRHNJ597230 IRHNJ593230 O-254AA 22JGQ045SCV 22GQ100SCV 25GQ045SCS IRHNA57064SCS IRHNJ597230SCS IRHNJ9130SCS IRHG6110SCS IRHY7434 IRHE57130SCS 8CLJQ045SCV IRHNJ57034SCS irfy9230 35CLQ045SCS
Untitled Abstract: No abstract text available Text: mi =Vr= INI IRFY340 SEM E LAB MECHANICAL DATA N-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS D im e nsio ns in mm inches 4 .70 5 .00 10.41 1 0.67 0.70 0.90 3.56 Dia. 3.81 V DSS 400V 6.9A 0.55ft ID(cont) 1 2 ^DS(on) FEATURES • HERMETICALLY SEALED T 0-220 METAL	OCR Scan	PDF	IRFY340 O-220M 300ms,
Untitled Abstract: No abstract text available Text: Provisional Data Sheet No. PD 9.1290B International ICR Rectifier HEXFET PO W ER M O S FE T IRFY340CM N-CHANNEL Product Summary 400 Volt, 0.55Q HEXFET HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The effi	OCR Scan	PDF	1290B IRFY340CM 6C731
Untitled Abstract: No abstract text available Text: International Government and Space HEXFET Power MOSFETs IlC T R e c H ffe r Hermetic Package N & P Channel Part Number b v DSS V RDS(on) (Ohms) lp @ Tr = 25°C <D@ TC = 100°C R thJC Max. Pd @ Case Tc = 25°C Outline (»> (A) (K/W) (W) Number (1) 0.6 17	OCR Scan	PDF	IRFG110 2N7334 JANTX2N7334 JANTXV2N7334 IRFG5110* N7335 JANTXV2N7335 IRFV064 IRFV360 IRFV460
irfm9034 Abstract: No abstract text available Text: 1 I n t e r n a t io n a l R e c t if ie r Government and Space Products Pvt Numb« 2 (3) bvdss (Vote) RDS(on) (Ohms) ID« Tc2T (Amps) 10« TC=100“ (Amps) Pd O Tc«25° (Watts) Fax-onOamand Number Case Styl«, (Cas (Min») (1) HEXFET Power MOSFETs Hermetic Package, N- and P-Channel	OCR Scan	PDF	IRFAF30 IRFAF40 IRFAF50 IRFAG30 IRFAG40 IRFAG50 IRF9130 JANTX2N6804 JANTXV2N6804 IRF9140 irfm9034
2N7334 Abstract: irfg9110 H24 SMD Text: Other Products from IR Government and Space H EX FET Power M O SFETs Radiation Hardened N - and P-Channel Part • d@ T ,= 25°C Iq@ Tq = 100*C A (A) RthJC Max. (K/W) Pd@ Tq = 25°C Number BVq ss (V) RDS(on) (Ohms) IRHE7110 100 IRHE8110 IRHE7130 IRHE8130	OCR Scan	PDF	IRHE7110 IRHE8110 IRHE7130 IRHE8130 IRHE7230 IRHE8230 IRHE9130 IRHN7054 IRHN8054 IRHN7130 2N7334 irfg9110 H24 SMD
JANTX2N7334 Abstract: irfy430 Text: Government/ " Space Products ^ I,a“ 4“ D0lb171 b41 " INTERNATIONAL RECTIFIER H EXFET - INR other Products From IR bSE D High Reliability/Mil Qualified •d @ TC = 25°C ■d @ Tc = 100°C ■HhJC Max. W A (WW) 0.70 0.70 0.70 0.70 1.0 1.0 1.0 1.0 0.6	OCR Scan	PDF	irfg110 M0-036AB 2n7334 jantx2n7334 jantxv2n7334 irfg5110 irfg6110 2n7336 irfy430
MO-D36AB Abstract: IRF9510 SEC IRF510 SEC 2n6845 jantx D 10.7 A IRF540 smd irf740 STAND FOR irfm9230 2N7237 JANTXV BC 542 Text: Government/ Space Products Products From ir Life, Power-Age, Environmental and Military Testing Capabilities — USA MIL-S-19500 Qualified Life Tests and Power-Age Capabilities A. H ig h te m p e ra tu re sto ra g e life te stin g up to 2 0 0 ° C . 0 . H T R B te st c a p a b ilitie s o v e r 2 5,00 0 p o s itio n s for V G S a n d for	OCR Scan	PDF	MIL-S-19500 T0-254AA T0-204AA/AE MO-D36AB IRF9510 SEC IRF510 SEC 2n6845 jantx D 10.7 A IRF540 smd irf740 STAND FOR irfm9230 2N7237 JANTXV BC 542

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IRFY340 Price and Stock

International Rectifier IRFY340C

IRFY340 Datasheets (14)

IRFY340 Datasheets Context Search

IRFY340C

IRFY340

IRFY340

IRFY340

Untitled

Untitled

IRFY340C

IRFY340C

IRFY340C

irfy340

IRFY340

IRFY340

IRF460

IRFM9034

SHD239608

10RIA10

IRHNA57064SCS

Untitled

Untitled

Untitled

irfm9034

2N7334

JANTX2N7334

MO-D36AB