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Vishay Siliconix IRFBE20PBF MOSFET N-CH 800V 1.8A TO220AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRFBE20PBF	Tube	1,485		1	1 $2.29 10 $2.29 100 $2.29 1000 $0.73496 10000 $0.63362	Buy Now
Bristol Electronics	IRFBE20PBF		44		2	1 - 10 $2.25 100 $1.875 1000 $1.875 10000 $1.875	Buy Now
Quest Components	IRFBE20PBF		35			1 $4 10 $2.5 100 $1.5 1000 $1.5 10000 $1.5	Buy Now
New Advantage Corporation	IRFBE20PBF		13,150		1	1 - 10 - 100 $0.6714 1000 $0.6714 10000 $0.6714	Buy Now
Vishay Siliconix IRFBE20 MOSFET N-CH 800V 1.8A TO220AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRFBE20	Tube			1,000	1 - 10 - 100 - 1000 $2.375 10000 $2.375	Buy Now
ComSIT USA	IRFBE20		250			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Vishay Siliconix IRFBE20S MOSFET N-CH 800V 1.8A D2PAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRFBE20S	Tube			350	1 - 10 - 100 - 1000 $1.22074 10000 $1.22074	Buy Now
Vishay Siliconix IRFBE20L MOSFET N-CH 800V 1.8A I2PAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRFBE20L	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Vishay Siliconix IRFBE20PBF-BE3 MOSFET N-CH 800V 1.8A TO220AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRFBE20PBF-BE3	Tube			1,000	1 - 10 - 100 - 1000 $0.73496 10000 $0.73496	Buy Now

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IRFBE20 Datasheets (15)

Part	Manufacturer	Description	Datasheet Type	PDF
IRFBE20	Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF
IRFBE20	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 800V 1.8A TO-220AB	Original	PDF
IRFBE20	International Rectifier	TO-220 HEXFET Power MOSFET	Scan	PDF
IRFBE20	International Rectifier	TO-220 Plastic Package HEXFETs	Scan	PDF
IRFBE20	International Rectifier	HEXFET Power MOSFET	Scan	PDF
IRFBE20	International Rectifier	Power MOSFET(Vdss=800V, Rds(on)=6.5ohm, Id=1.8A)	Scan	PDF
IRFBE20	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
IRFBE20	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
IRFBE20L	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 800V 1.8A TO-262	Original	PDF
IRFBE20PBF	International Rectifier	HEXFET Power MOSFET	Original	PDF
IRFBE20PBF	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 800V 1.8A TO-220AB	Original	PDF
IRFBE20PBF	Vishay Semiconductors	MOSFET N-CH 800V 1.8A TO-220AB	Scan	PDF
IRFBE20PBF-BE3	Vishay Siliconix	MOSFET N-CH 800V 1.8A TO220AB	Original	PDF
IRFBE20STRL	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 800V 1.8A D2PAK	Original	PDF

IRFBE20STRR	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 800V 1.8A D2PAK	Original	PDF

IRFBE20 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
9014 transistor specification Abstract: AN609 IRFBE20 SiHFBE20 Text: IRFBE20_RC, SiHFBE20_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,	Original	PDF	IRFBE20 SiHFBE20 AN609, 20-Apr-10 9014 transistor specification AN609
diode IR 132 E Abstract: DIODE NU Text: PD - 95630 IRFBE20PbF • Lead-Free www.irf.com 1 8/4/04 IRFBE20PbF 2 www.irf.com IRFBE20PbF www.irf.com 3 IRFBE20PbF 4 www.irf.com IRFBE20PbF www.irf.com 5 IRFBE20PbF 6 www.irf.com IRFBE20PbF Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations	Original	PDF	IRFBE20PbF O-220AB. O-220AB diode IR 132 E DIODE NU
IRFBE20 Abstract: No abstract text available Text: IRFBE20, SiHFBE20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 800 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 38 • Fast Switching Qgs (nC) 5.0 • Ease of Paralleling 21 • Simple Drive Requirements Qgd (nC) Configuration	Original	PDF	IRFBE20, SiHFBE20 O-220 12-Mar-07 IRFBE20
Untitled Abstract: No abstract text available Text: IRFBE20, SiHFBE20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 800 RDS(on) () VGS = 10 V RoHS* Qg (Max.) (nC) 38 • Fast Switching Qgs (nC) 5.0 • Ease of Paralleling 21 • Simple Drive Requirements Qgd (nC)	Original	PDF	IRFBE20, SiHFBE20 2002/95/EC O-220AB O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A
400VID Abstract: No abstract text available Text: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 561 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com CASE OUTLINE: TYPE: IRFBE20 TO-220AB HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING:	Original	PDF	O-220AB IRFBE20 400VID
Untitled Abstract: No abstract text available Text: PD - 95630 IRFBE20PbF • Lead-Free Document Number: 91117 8/4/04 www.vishay.com 1 IRFBE20PbF Document Number: 91117 www.vishay.com 2 IRFBE20PbF Document Number: 91117 www.vishay.com 3 IRFBE20PbF Document Number: 91117 www.vishay.com 4 IRFBE20PbF Document Number: 91117	Original	PDF	IRFBE20PbF 08-Mar-07
Untitled Abstract: No abstract text available Text: IRFBE20, SiHFBE20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 800 RDS(on) () VGS = 10 V RoHS* Qg (Max.) (nC) 38 • Fast Switching Qgs (nC) 5.0 • Ease of Paralleling 21 • Simple Drive Requirements Qgd (nC)	Original	PDF	IRFBE20, SiHFBE20 2002/95/EC O-220AB O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A
Untitled Abstract: No abstract text available Text: IRFBE20, SiHFBE20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 800 RDS(on) () VGS = 10 V RoHS* Qg (Max.) (nC) 38 • Fast Switching Qgs (nC) 5.0 • Ease of Paralleling 21 • Simple Drive Requirements Qgd (nC)	Original	PDF	IRFBE20, SiHFBE20 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
Untitled Abstract: No abstract text available Text: IRFBE20, SiHFBE20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 800 RDS(on) () VGS = 10 V RoHS* Qg (Max.) (nC) 38 • Fast Switching Qgs (nC) 5.0 • Ease of Paralleling 21 • Simple Drive Requirements Qgd (nC)	Original	PDF	IRFBE20, SiHFBE20 2002/95/EC O-220AB O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
IRFBE20 Abstract: IRFBE20PbF SiHFBE20 SiHFBE20-E3 Text: IRFBE20, SiHFBE20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 800 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 38 • Fast Switching Qgs (nC) 5.0 • Ease of Paralleling 21 • Simple Drive Requirements Qgd (nC) Configuration	Original	PDF	IRFBE20, SiHFBE20 O-220 O-220 18-Jul-08 IRFBE20 IRFBE20PbF SiHFBE20-E3
IRFBE20 Abstract: No abstract text available Text: IRFBE20, SiHFBE20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 800 RDS(on) () VGS = 10 V RoHS* Qg (Max.) (nC) 38 • Fast Switching Qgs (nC) 5.0 • Ease of Paralleling 21 • Simple Drive Requirements Qgd (nC)	Original	PDF	IRFBE20, SiHFBE20 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 IRFBE20
Untitled Abstract: No abstract text available Text: PD - 95630 IRFBE20PbF • Lead-Free Document Number: 91117 8/4/04 www.vishay.com 1 IRFBE20PbF Document Number: 91117 www.vishay.com 2 IRFBE20PbF Document Number: 91117 www.vishay.com 3 IRFBE20PbF Document Number: 91117 www.vishay.com 4 IRFBE20PbF Document Number: 91117	Original	PDF	IRFBE20PbF 12-Mar-07
IRFBE20 Abstract: SiHFBE20 SiHFBE20-E3 d1758 Text: IRFBE20, SiHFBE20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 800 RDS(on) () VGS = 10 V RoHS* Qg (Max.) (nC) 38 • Fast Switching Qgs (nC) 5.0 • Ease of Paralleling 21 • Simple Drive Requirements Qgd (nC)	Original	PDF	IRFBE20, SiHFBE20 2002/95/EC O-220AB O-220AB 11-Mar-11 IRFBE20 SiHFBE20-E3 d1758
Untitled Abstract: No abstract text available Text: IRFBE20, SiHFBE20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 800 RDS(on) () VGS = 10 V RoHS* Qg (Max.) (nC) 38 • Fast Switching Qgs (nC) 5.0 • Ease of Paralleling 21 • Simple Drive Requirements Qgd (nC)	Original	PDF	IRFBE20, SiHFBE20 2002/95/EC O-220AB 11-Mar-11

n 332 ab Abstract: No abstract text available Text: IRFBE20, SiHFBE20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 800 RDS(on) () VGS = 10 V RoHS* Qg (Max.) (nC) 38 • Fast Switching Qgs (nC) 5.0 • Ease of Paralleling 21 • Simple Drive Requirements Qgd (nC)	Original	PDF	IRFBE20, SiHFBE20 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 n 332 ab
Untitled Abstract: No abstract text available Text: IRFBE20 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)800 V(BR)GSS (V) I(D) Max. (A)1.8 I(DM) Max. (A) Pulsed I(D)1.2 @Temp (øC)100# IDM Max (@25øC Amb)7.2 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)54 Minimum Operating Temp (øC)-55õ	Original	PDF	IRFBE20
mosfet cross reference Abstract: Power MOSFET Cross Reference Guide 2SK2146 Cross Reference power MOSFET SUP60NO6-18 MOSFET TOSHIBA 2SK irf510 Motorola SUP70NO6 STP16NEO6 IRF540 substitution Text: TMOS Power MOSFET Cross Reference This Cross reference lists MOSFETs by either industry standard part number or by manufacturer's part number for which there is a Motorola nearest or similar replacement. For devices not listed, or for additional information, contact the nearest Motorola Franchised Distributor or your local	Original	PDF
fqp60n06 Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640 Text: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier	Original	PDF	STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
STR-G6551 Abstract: STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312 Text: Cross Reference, V1.0, Apr. 2002 Alphanumerical Cross Reference CoolMOSTM/IGBT/EmConTM/CoolSETTM Power Management & Supply N e v e r s t o p t h i n k i n g . Alphanumerical Cross Reference Revision History: 2002-04 V1.0 Previous Version: Page Subjects major changes since last revision	Original	PDF	2002-Sep. STR-G6551 STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312
sumida 94V-0 Abstract: inverter using irfz44n MOSFET IRF9430 IRF7414 irfp460 dc welding circuit diagram IRFP264 inverter circuits IRFP450 inverter Three phase inverter using irfp450 mosfet Diagram Sumida ul94v-0 inverter IRF 544 N MOSFET Text: International Rectifier The IGBT SIP & HEXPak Navigator Effective 8 September, EXISTING Products NEW Products UPCOMING Products POTENTIAL Products released to production in last 6-9 months to be released within next 3-4 months no current plans. see bus.mgmt.	Original	PDF	IRFK2D054 IRFK2F054 CPV362M4U CPV363M4U CPV364M4U CPV362M4F CPV363M4F CPV364M4F CPV362M4K CPV363M4K sumida 94V-0 inverter using irfz44n MOSFET IRF9430 IRF7414 irfp460 dc welding circuit diagram IRFP264 inverter circuits IRFP450 inverter Three phase inverter using irfp450 mosfet Diagram Sumida ul94v-0 inverter IRF 544 N MOSFET
IRGKI165F06 Abstract: IRGDDN600M06 IRGDDN600K06 IRF7311 IRGNIN075 IRFK6H054 IRF7601 IRLI2203N IRLML2803 IRLML5103 Text: Index HEXFET Power MOSFETs Part Number International Rectifier ID R DS on V(BR)DSS Continuous On-State Drain-to-Source Drain Current Breakdown Voltage Resistance 25°C (Ω) (A) (V) ID Continuous Drain Current 70°C (A) RθJ A Max Thermal Resistance (°C/W)	Original	PDF	OT-23) IRLML2402* IRLML2803 IRLML5103 IRLML6302* IRGKI165F06 IRGDDN600M06 IRGDDN600K06 IRF7311 IRGNIN075 IRFK6H054 IRF7601 IRLI2203N IRLML2803 IRLML5103
IRF470 Abstract: IRFP240R IRF840CF IRF449 IRF340A irf520 power IRF341R IRFP20 irf460 to-247 IRF331R Text: STI Type: IRF331 Notes: Breakdown Voltage: 350 Continuous Current: 5.5 RDS on Ohm: 1.0 Trans Conductance Mhos: 3.0 Trans Conductance A: 3.0 Gate Threshold min: 2.0 Gate Threshold max: 4.0 Resistance Switching ton: 30 Resistance Switching toff: 55 Resistance Switching ID: 3.0	Original	PDF	IRF331 O-204AA/TO-3 IRF332 2N6012 O-247 IRFP352R IRFP353R IRF470 IRFP240R IRF840CF IRF449 IRF340A irf520 power IRF341R IRFP20 irf460 to-247 IRF331R
diode BYY 62 Abstract: MOSFET 800V 10A to 220 3l IRFBE20 BYY diode Text: PD-9.610A International S Rectifier IRFBE20 HEXFET Power MOSFET • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements VDSS= 800V ^DS on = lD = 1.8A Description T h ird G e n e ra tio n H E X F E T s fro m Inte rn a tio n a l R ectifie r provid e th e d e sig n e r	OCR Scan	PDF	IRFBE20 O-220 diode BYY 62 MOSFET 800V 10A to 220 3l IRFBE20 BYY diode
Untitled Abstract: No abstract text available Text: International ioR Rectifier M Ö 55452 HEXFET P o w e r M O S F E T IN T E R N A T I O N A L • • • • • IIN R 0 D 1 4 cJbfl S B T PD-9.610A IRFBE20 R E C T IF IE R Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling	OCR Scan	PDF	IRFBE20 50IFIER

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IRFBE20 Datasheets (15)

IRFBE20 Datasheets Context Search

9014 transistor specification

diode IR 132 E

IRFBE20

Untitled

400VID

Untitled

Untitled

Untitled

Untitled

IRFBE20

IRFBE20

Untitled

IRFBE20

Untitled

n 332 ab

Untitled

mosfet cross reference

fqp60n06

STR-G6551

sumida 94V-0

IRGKI165F06

IRF470

diode BYY 62

Untitled