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Vishay Siliconix IRF634NPBF MOSFET N-CH 250V 8A TO220AB
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IRF634N Datasheets (11)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
IRF634N		International Rectifier	Power MOSFET(Vdss=250V, Rds(on)=0.435ohm, Id=8.0A)		Original	PDF
IRF634NL		International Rectifier	HEXFET Power MOSFET		Original	PDF
IRF634NLPbF		International Rectifier	HEXFET Power MOSFET		Original	PDF
IRF634NLPBF		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 250V 8A TO-262		Original	PDF
IRF634NPBF		International Rectifier	HEXFET Power MOSFET		Original	PDF
IRF634NPBF		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 250V 8A TO-220AB		Original	PDF
IRF634NS		International Rectifier	HEXFET Power MOSFET		Original	PDF
IRF634NSPbF		International Rectifier	HEXFET Power MOSFET		Original	PDF
IRF634NSPBF		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 250V 8A D2PAK		Original	PDF
IRF634NSTRL		International Rectifier	HEXFET Power MOSFET		Original	PDF
IRF634NSTRR		International Rectifier	HEXFET Power MOSFET		Original	PDF

IRF634N Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: PD - 94310 Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements Description IRF634N IRF634NS IRF634NL l HEXFET Power MOSFET l D RDS on = 0.435Ω	Original	PDF	IRF634N IRF634NS IRF634NL O-220 08-Mar-07
IRF1010 Abstract: IRF634N IRF634NL IRF634NS 1403X Text: PD - 95342 Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements l Lead-Free Description IRF634NPbF IRF634NSPbF IRF634NLPbF l l HEXFET Power MOSFET	Original	PDF	IRF634NPbF IRF634NSPbF IRF634NLPbF O-220 12-Mar-07 IRF1010 IRF634N IRF634NL IRF634NS 1403X
IRF634N Abstract: IRF634NL IRF634NS SiHF634N SiHF634N-E3 SiHF634NS SiHF634NS-E3 Text: IRF634N, IRF634NL, IRF634NS, SiHF634N, SiHF634NL, SiHF634NS Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 250 RDS(on) (Ω) VGS = 10 V 0.435 Qg (Max.) (nC) 34 Qgs (nC) 6.5 Qgd (nC) 16 Configuration Single • • • • • • • • Advanced Process Technology	Original	PDF	IRF634N, IRF634NL, IRF634NS, SiHF634N SiHF634NL SiHF634NS O-262) O-220 O-263) 18-Jul-08 IRF634N IRF634NL IRF634NS SiHF634N-E3 SiHF634NS-E3
IRF1010 Abstract: IRF530S IRF634N IRF634NL IRF634NS IRL3103L Text: PD - 94310 Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements Description IRF634N IRF634NS IRF634NL l HEXFET Power MOSFET l D RDS on = 0.435Ω	Original	PDF	IRF634N IRF634NS IRF634NL O-220 12-Mar-07 IRF1010 IRF530S IRF634N IRF634NL IRF634NS IRL3103L
IRF1010 Abstract: IRF634N IRF634NL IRF634NS Text: PD - 95342 Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements l Lead-Free Description IRF634NPbF IRF634NSPbF IRF634NLPbF l l HEXFET Power MOSFET	Original	PDF	IRF634NPbF IRF634NSPbF IRF634NLPbF O-220 O-220A AN-994. IRF634N) IRF634NS IRF634NL) IRF1010 IRF634N IRF634NL
IRF1010 Abstract: IRF530S IRF634N IRF634NL IRF634NS IRL3103L Text: PD - 94310 Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements Description IRF634N IRF634NS IRF634NL l HEXFET Power MOSFET l D RDS on = 0.435Ω	Original	PDF	IRF634N IRF634NS IRF634NL O-220 O-220A AN-994. IRF634N) IRF634NS IRF634NL) IRF1010 IRF530S IRF634N IRF634NL IRL3103L
Untitled Abstract: No abstract text available Text: PD - 95342 Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements l Lead-Free Description IRF634NPbF IRF634NSPbF IRF634NLPbF l l HEXFET Power MOSFET	Original	PDF	IRF634NPbF IRF634NSPbF IRF634NLPbF O-220 08-Mar-07
D2Pak Package vishay material Abstract: SiHF634N-E3 SiHF634NS SiHF634NS-E3 IRF634N IRF634NL IRF634NS SiHF634N IRF634NSPBF Text: IRF634N, IRF634NL, IRF634NS, SiHF634N, SiHF634NL, SiHF634NS Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Advanced Process Technology VDS V 250 RDS(on) (Ω) VGS = 10 V 0.435 RoHS* • 175 °C Operating Temperature Qg (Max.) (nC) 34 • Fast Switching	Original	PDF	IRF634N, IRF634NL, IRF634NS, SiHF634N SiHF634NL SiHF634NS O-262) O-220 O-263) 18-Jul-08 D2Pak Package vishay material SiHF634N-E3 SiHF634NS-E3 IRF634N IRF634NL IRF634NS IRF634NSPBF
Untitled Abstract: No abstract text available Text: IRF634N, IRF634NL, IRF634NS, SiHF634N, SiHF634NL, SiHF634NS Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 250 RDS(on) (Ω) VGS = 10 V 0.435 Qg (Max.) (nC) 34 Qgs (nC) 6.5 Qgd (nC) 16 Configuration Single • • • • • • • • Advanced Process Technology	Original	PDF	IRF634N, IRF634NL, IRF634NS, SiHF634N SiHF634NL SiHF634NS O-262) O-220 O-263) 12-Mar-07
Untitled Abstract: No abstract text available Text: IRF634N, IRF634NL, IRF634NS, SiHF634N, SiHF634NL, Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Advanced Process Technology VDS V 250 RDS(on) (Ω) VGS = 10 V 0.435 RoHS* • 175 °C Operating Temperature Qg (Max.) (nC) 34 • Fast Switching	Original	PDF	IRF634N, IRF634NL, IRF634NS, SiHF634N SiHF634NL 18-Jul-08
IRF1830G Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696 Text: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Inﬁneon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23	Original	PDF	AO4405 AO4407 AO4408 AO4409 AO4410 AO4411 AO4413 AO4415 AO4422 AO4700 IRF1830G IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
IRU1239SC Abstract: iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter Text: SHENZHEN SHOUHE TECHNOLOGY CO., LTD. TEL: 0755-8380 8450 FAX: 0755-8380 8425 Part Information PartNo Function Line Pkg 100MT160PAPBF Discrete IRCI Module MTP 100MT160PA Discrete IRCI Module MTP 100MT160PBPBF Discrete IRCI Module MTP IRCI Module MTP IRCI Module MTK	Original	PDF	100MT160PAPBF 100MT160PA 100MT160PBPBF IRU1239SC iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter
CEP50N06 Abstract: CEP83A3 equivalent cep83a3 CEF02N6A cep6355 FQPF8N60C equivalent CEF04N6 equivalent CEP63A3 CEP20N06 cep76139 Text: Contents Power Mosfet Selection Guide N CHANNEL Package Page SO-8 2 TO-251/TO-252 3 TO-220/TO-263 4-5 SOT-23 5 SOT-223 5 SOT-89 5 TSOP-6 5 TSSOP-8 6 TO-92 6 2928-8J 6 TO-220FM 6 P CHANNEL Package Page SO-8 7 TO-251/TO-252 7 TO-220/TO-263 8 SOT-23 8 SOT-223	Original	PDF	O-251/TO-252 O-220/TO-263 OT-23 OT-223 OT-89 2928-8J O-220FM CEP50N06 CEP83A3 equivalent cep83a3 CEF02N6A cep6355 FQPF8N60C equivalent CEF04N6 equivalent CEP63A3 CEP20N06 cep76139
S78DM12Q Abstract: Sf20d400 s78dM12 BA5810 sn7905 SF5A400 transistor AE code PNP smd sf20a300 SF10A300 SF10D300 Text: 上海 w 众 w 韩 .c kb 授 -s 权 h. 代 co 理 m w 上海 w 众 w 韩 .c kb 授 -s 权 h. 代 co 理 m w 上海 w 众 w 韩 .c kb 授 -s 权 h. 代 co 理 m w Power Solution w 上海 w 众 w 韩 .c kb 授 -s 权 h. 代 co 理 m LED Solution LED TV Power	Original	PDF	SN431) SUN0550F/D O-220AB-3L O-220F-3L O-220F-4SL DIP-14 DIP-20 DIP-18 S78DM12Q Sf20d400 s78dM12 BA5810 sn7905 SF5A400 transistor AE code PNP smd sf20a300 SF10A300 SF10D300