LN189S
Abstract: No abstract text available
Text: Infrared Light Emitting Diodes LN189S GaAlAs Infrared Light Emitting Diode Unit : mm 1 Light source for distance measuring systems 0.4±0.1 Infrared light emission close to monochromatic light : λP = 880 nm typ. Narrow direcivity using spherical lenses; works well with optical
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LN189S
LN189S
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LN189S
Abstract: No abstract text available
Text: Infrared Light Emitting Diodes LN189S GaAlAs Infrared Light Emitting Diode Unit : mm 1 Light source for distance measuring systems 0.4±0.1 Infrared light emission close to monochromatic light : λP = 880 nm typ. Narrow direcivity using spherical lenses; works well with optical
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LN189S
LN189S
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Untitled
Abstract: No abstract text available
Text: Infrared Light Emitting Diodes LN189M GaAlAs Infrared Light Emitting Diode Unit : mm 1 Light source for distance measuring systems 0.4±0.1 Infrared light emission close to monochromatic light : λP = 880 nm typ. Narrow directivity using spherical lenses; works well with optical
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LN189M
100mA
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LN189L
Abstract: No abstract text available
Text: Infrared Light Emitting Diodes LN189L GaAlAs Infrared Light Emitting Diode Unit : mm 1 Light source for distance measuring systems 0.4±0.1 Infrared light emission close to monochromatic light : λP = 880 nm typ. Narrow directivity using spherical lenses; works well with optical
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LN189L
LN189L
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LN189L
Abstract: No abstract text available
Text: Infrared Light Emitting Diodes LN189L GaAlAs Infrared Light Emitting Diode Unit : mm 1 Light source for distance measuring systems 0.4±0.1 Infrared light emission close to monochromatic light : λP = 880 nm typ. Narrow directivity using spherical lenses; works well with optical
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LN189L
LN189L
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infrared diode
Abstract: LN184 power diode 100mA
Text: Infrared Light Emitting Diodes LN184 Unit : mm , 1.0 max. GaAlAs Infrared Light Emitting Diode 4.5±0.2 2.0 0.29 Light source for distance measuring systems ø4.6±0.15 Fast response and high-speed modulation capability : tr, tf = 20 ns(typ.) Infrared light emission close to monochromatics light : λP = 880 nm
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LN184
infrared diode
LN184
power diode 100mA
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LN184
Abstract: No abstract text available
Text: Infrared Light Emitting Diodes LN184 Unit : mm , , 1.0 max. GaAlAs Infrared Light Emitting Diode 4.5±0.2 2.0 0.29 Light source for distance measuring systems ø4.6±0.15 Fast response and high-speed modulation capability : tr, tf = 20 ns(typ.) Infrared light emission close to monochromatics light : λP = 880 nm
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LN184
LN184
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LN184
Abstract: 24525
Text: Infrared Light Emitting Diodes LN184 Unit : mm M Di ain sc te on na tin nc ue e/ d , 1.0 max. GaAlAs Infrared Light Emitting Diode 4.5±0.2 2.0 0.29 Light source for distance measuring systems ø4.6±0.15 Features Spherical lens Infrared light emission close to monochromatics light : λP = 880 nm
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LN184
LN184
24525
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Untitled
Abstract: No abstract text available
Text: Infrared Light Emitting Diodes LN189L GaAlAs Infrared Light Emitting Diode Unit : mm 1 Light source for distance measuring systems 0.4±0.1 M Di ain sc te on na tin nc ue e/ d Fast response and high-speed modulation capability : tr, tf = 20 ns typ. Infrared light emission close to monochromatic light : λP = 880 nm(typ.)
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LN189L
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Untitled
Abstract: No abstract text available
Text: Infrared Light Emitting Diodes LN189S GaAlAs Infrared Light Emitting Diode Unit : mm 1 Light source for distance measuring systems 0.4±0.1 M Di ain sc te on na tin nc ue e/ d Fast response and high-speed modulation capability : tr, tf =20 ns typ. Infrared light emission close to monochromatic light : λP = 880 nm(typ.)
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LN189S
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TLN217
Abstract: No abstract text available
Text: TLN217 TOSHIBA Infrared LED GaAℓAs Infrared Emitter Preliminary TLN217 Infrared Light-Emitting Diode for Still Camera Light Source for Auto Focus Unit: mm The TLN217 is a high output infrared LED employing a new structure of GaAℓAs current confining LED chip.
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TLN217
TLN217
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GaAs 850 nm Infrared Emitting Diode
Abstract: TLN217
Text: TLN217 TOSHIBA Infrared LED GaAℓAs Infrared Emitter Preliminary TLN217 Infrared Light-Emitting Diode for Still Camera Light Source for Auto Focus Unit: mm The TLN217 is a high output infrared LED employing a new structure of GaAℓAs current confining LED chip.
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TLN217
TLN217
GaAs 850 nm Infrared Emitting Diode
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TLN217
Abstract: No abstract text available
Text: TLN217 F TOSHIBA Infrared LED GaAℓAs Infrared Emitter TLN217(F) Lead Free Product Infrared Light-Emitting Diode for Still Camera Unit: mm Light Source for Auto Focus The TLN217(F) is a high output infrared LED employing a new structure of GaAℓAs current confining LED chip.
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TLN217
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TLN212
Abstract: No abstract text available
Text: TLN212 F TOSHIBA Infrared LED GaAℓAs Infrared Emitter TLN212(F) Lead Free Product Infrared Light−Emission Diode For Still Camera Unit: mm Light Source For Auto Focus • Optical radiation of current confining LED chip is condensed by a resin lens. •
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TLN212
136sr
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Untitled
Abstract: No abstract text available
Text: Pulsed Broadband Infrared Light Source MIRL17-900 Intex has developed a series of unique high-intensity pulsed infrared IR light sources capable of operating at high frequencies. Modulation of the light output is achieved by modulating the input electrical power,
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MIRL17-900
100mm.
mirl17-900
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MIRL17-900
Abstract: International Technology Exchange Infrared light source mems IR emitter ZnSe INTEX
Text: Pulsed Broadband Infrared Light Source MIRL17-900 Intex has developed a series of unique high-intensity pulsed infrared IR light sources capable of operating at high frequencies. Modulation of the light output is achieved by modulating the input electrical power,
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MIRL17-900
mirl17-900
International Technology Exchange
Infrared light source
mems IR emitter
ZnSe
INTEX
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Untitled
Abstract: No abstract text available
Text: Pulsed Broadband Infrared Light Source MIRL17-900 Intex has developed a series of unique high-intensity pulsed infrared IR light sources capable of operating at high frequencies. Modulation of the light output is achieved by modulating the input electrical power,
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MIRL17-900
100mm.
mirl17-900
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Untitled
Abstract: No abstract text available
Text: Pulsed Broadband Infrared Light Source MIRL17-900 Intex has developed a series of unique high-intensity pulsed infrared IR light sources capable of operating at high frequencies. Modulation of the light output is achieved by modulating the input electrical power,
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MIRL17-900
Hig8142
mirl17-900
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Untitled
Abstract: No abstract text available
Text: Pulsed Broadband Infrared Light Source MIRL17-900 Intex has developed a series of unique high-intensity pulsed infrared IR light sources capable of operating at high frequencies. Modulation of the light output is achieved by modulating the input electrical power,
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MIRL17-900
MIRL17-900.
mirl17-900
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Untitled
Abstract: No abstract text available
Text: Pulsed Broadband Infrared Light Source MIRL17-900 Intex has developed a series of unique high-intensity pulsed infrared IR light sources capable of operating at high frequencies. Modulation of the light output is achieved by modulating the input electrical power,
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MIRL17-900
mirl17-900
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IL-S-C2-S-10000
Abstract: ILS*2c2 ILSC2S10000 s2c2
Text: PHOTOREFLECTOR Light modulation photoreflector P6448 Compact module combining light modulation photo IC and infrared LED P6448 is a photoreflector consisting of a light modulation photo IC and an infrared LED, etc. The light modulation photo IC allows reliable
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P6448
P6448
SE-171
KPC1002E02
IL-S-C2-S-10000
ILS*2c2
ILSC2S10000
s2c2
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Untitled
Abstract: No abstract text available
Text: Panasonic Infrared Light Emitting Diodes LN66F G aAs Infrared Light Emitting Diode For light source of remote control systems • Features • High-power output, high-efficiency : Ie = 13.0 mW/sr min. • Light emitting spectrum suited for silicon photodetectors
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LN66F
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LN66F
Abstract: No abstract text available
Text: Panasonic Infrared Light Emitting Diodes LN66F GaAs Infrared Light Emitting Diode For light source of remote control systems • Features • • • • High-power output, high-efficiency : Ie = 13.0 mW/sr min. Light emitting spectrum suited for silicon photodetectors
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LN66F
LN66F
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a950
Abstract: No abstract text available
Text: Panasonic Infrared Light Emitting Diodes LN66F G aAs Infrared Light Emitting Diode For light source of remote control systems • Features • • • • High-power output, high-efficiency : Ie = 13.0 mW /sr min. Light emitting spectrum suited for silicon photodetectors
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LN66F
0102Q.
a950
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