the calculation of the power dissipation for the igbt and the inverse diode in circuits
Abstract: IGCT 10 kw schematic induction heating "the calculation of the power dissipation for the igbt and the inverse diode in circuits" IGCT thyristor calculation of IGBT snubber snubber IGCT IEGT abb press-pack igbt igbt inverter schematic induction heating
Text: Positive development in power electronics New 5.2kV Extra Fast Recovery Diode for IGBT and IGCT Applications. New 5.2 kV Extra Fast Recovery Diode for IGBT and IGCT Applications A. Golland, F. J. Wakeman, G. Li Westcode Semiconductors Ltd, Langley Park, Chippenham, SN15 1GE, UK
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Abstract: No abstract text available
Text: Key Parameters VRRM = 4500 IFAVM = 570 IFRMS = 890 IFSM = 16 VF0 = 1.50 rF = 1.8 VDClink = 2800 Fast Recovery Diode for IGCT applications V A A kA V mΩ V 5SDF 05F4502 PRELIMINARY Doc. No. 5SYA 1151-01 Feb. 99 Features • Patented free-floating technology
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05F4502
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Abstract: No abstract text available
Text: Key Parameters VRRM = 5500 IFAVM = 180 IFRMS = 280 IFSM = 3 VF0 = 3.05 rF = 7.20 VDClink = 3300 Fast Recovery Diode for IGCT applications V A A kA V 5SDF 02D6004 Preliminary mΩ V Doc. No. 5SYA 1118-01 July 98 Features • Patented free-floating silicon technology
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02D6004
Accel00.
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IGCT in switching operation
Abstract: kn 18
Text: Key Parameters VRRM = 5500 IFAVM = 180 IFRMS = 280 IFSM = 3 VF0 = 3.05 rF = 7.2 VDClink = 3300 Fast Recovery Diode for IGCT applications V A A kA V mΩ V 5SDF 02D6004 PRELIMINARY Doc. No. 5SYA 1118-02 Feb. 99 Features • Patented free-floating technology
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02D6004
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kn 18
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7000UC
Abstract: 5SDF16L4502 106A2 16L4502
Text: Key Parameters VRRM = 4500 IFAVM = 1300 IFRMS = 2000 IFSM = 33 VF0 = 2.00 rF = 0.55 VDClink = 2800 Fast Recovery Diode for IGCT applications V A A kA V mΩ V 5SDF 16L4502 MARKETING INFORMATION Doc. No. 5SYA 1153-00 Feb. 99 Features • Patented free-floating silicon technology
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16L4502
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7000UC
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Abstract: No abstract text available
Text: Key Parameters VRRM = 4500 IFAVM = 950 IFRMS = 1500 IFSM = 24 VF0 = 1.94 rF = 0.86 VDClink = 2800 Fast Recovery Diode for IGCT applications V A A kA V mΩ V 5SDF 10H4502 PRELIMINARY Doc. No. 5SYA 1115-03 Feb. 99 Features • Patented free-floating technology
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Abstract: No abstract text available
Text: Key Parameters VRRM = 4500 IFAVM = 255 IFRMS = 400 IFSM = 5 VF0 = 2.00 rF = 3.8 VDClink = 2800 Fast Recovery Diode for IGCT applications V A A kA V mΩ V 5SDF 03D4502 PRELIMINARY Doc. No. 5SYA 1117-02 Feb. 99 Features • Patented free-floating technology
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03D4502
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Abstract: No abstract text available
Text: Key Parameters VRRM = 5500 IFAVM = 360 IFRMS = 570 IFSM = 10 VF0 = 2.70 rF = 4.0 VDClink = 3300 Fast Recovery Diode for IGCT applications V A A kA V mΩ V 5SDF 04F6004 PRELIMINARY Doc. No. 5SYA 1150-02 Feb. 99 Features • Patented free-floating technology
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Abstract: No abstract text available
Text: VRRM IFAVM IFRMS IFSM VF0 rF VDClink = = = = = = = 5500 180 280 3 3.05 7.2 3300 Fast Recovery Diode for IGCT applications V A A kA V mΩ V 5SDF 02D6004 PRELIMINARY Doc. No. 5SYA 1118-02 Feb. 99 • • • • • Patented free-floating technology Industry standard housing
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Abstract: No abstract text available
Text: Key Parameters VRRM = 5500 IFAVM = 640 IFRMS = 1000 IFSM = 18 VF0 = 2.65 rF = 2.1 VDClink = 3300 Fast Recovery Diode for IGCT applications V A A kA V mΩ V 5SDF 08H6005 PRELIMINARY Doc. No. 5SYA 1116-01 Jan. 99 Features • Patented free-floating technology
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Abstract: No abstract text available
Text: VRRM IFAVM IFRMS IFSM VF0 rF VDClink = = = = = = = 4500 950 1500 24 1.94 0.86 2800 Fast Recovery Diode for IGCT applications V A A kA V mΩ V 5SDF 10H4502 PRELIMINARY Doc. No. 5SYA 1115-03 Feb. 99 • • • • • Patented free-floating technology Industry standard housing
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Abstract: 5SDF03D4502
Text: VRRM IFAVM IFRMS IFSM VF0 rF VDClink = = = = = = = 4500 255 400 5 2.00 3.8 2800 Fast Recovery Diode for IGCT applications V A A kA V mΩ V 5SDF 03D4502 PRELIMINARY Doc. No. 5SYA 1117-02 Feb. 99 • • • • • Patented free-floating technology Industry standard housing
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Abstract: No abstract text available
Text: VRRM IFAVM IFRMS IFSM VF0 rF VDClink = = = = = = = 5500 360 570 10 2.70 4.0 3300 Fast Recovery Diode for IGCT applications V A A kA V mΩ V 5SDF 04F6004 PRELIMINARY Doc. No. 5SYA 1150-02 Feb. 99 • • • • • Patented free-floating technology Industry standard housing
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Abstract: 16L45 IGCT a7000 5SDF16L4502
Text: VRRM IFAVM IFRMS IFSM VF0 rF VDClink = = = = = = = 4500 1300 2000 33 2.00 0.55 2800 Fast Recovery Diode for IGCT applications V A A kA V mΩ V 5SDF 16L4502 MARKETING INFORMATION Doc. No. 5SYA 1153-00 Feb. 99 • • • • • Patented free-floating silicon technology
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Abstract: No abstract text available
Text: VRRM IFAVM IFRMS IFSM VF0 rF VDClink = = = = = = = 4500 570 890 16 1.50 1.8 2800 Fast Recovery Diode for IGCT applications V A A kA V mΩ V 5SDF 05F4502 PRELIMINARY Doc. No. 5SYA 1151-01 Feb. 99 • • • • • Patented free-floating technology Industry standard housing
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Abstract: ABB Semiconductors 5SYA1106-02
Text: VRRM IFAVM IFSM VF0 rF VDClink = = = = = = 4500 320 5 2 1.5 2400 V A kA V mΩ Ω V Fast Recovery Diode 5SDF 03D4501 Doc. No. 5SYA1106-02 Sep. 01 • Patented free-floating silicon technology • Low switching losses • Optimized to use as snubber and clamp diode in GTO and IGCT converters
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Abstract: snubber IGCT
Text: VRRM IFAVM IFSM VF0 rF VDClink = = = = = = 4500 320 5 2 1.5 2400 V A kA V Fast Recovery Diode 5SDF 03D4501 mΩ V Doc. No. 5SYA 1106-02 Aug. 2000 • Patented free-floating silicon technology • Low switching losses • Optimized to use as snubber and clamp diode in GTO and IGCT converters
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Abstract: No abstract text available
Text: Key Parameters VRRM = 4500 IFAVM = 320 IFRMS = 500 IFSM = 5 VF0 = 2.00 rF = 1.5 VDClink = 2400 V A A kA V Fast Recovery Diode 5SDF 03D4501 mΩ V Doc. No. 5SYA 1106-02 July 98 Features •Patented free-floating silicon technology •Low switching losses •Optimized to use as snubber and clamp diode in GTO and IGCT converters
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Abstract: IGCT thyristor ABB snubber IGCT IGCT 4.5kv IGCT thyristor IGCT thyristor ABB new ABB IGBT inverter PCIM 96 ABB thyristor modules symmetric IGCT
Text: Application Specific IGCTs Eric Carroll, Bjoern Oedegard, Thomas Stiasny, Marco Rossinelli ICPE, October 2001, Seoul, Korea Copyright [2001] IEEE. Reprinted from the International Conference on Power Electronics. This material is posted here with permission of the IEEE. Such permission of the
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Abstract: wind energy simulink matlab wind SOLAR simulink matlab UNITROL 1000 rc helicopter circuit diagram abb acs800 bridge circuit diagram igct abb ABB Thyristor YST PROJECT REPORT ON 220 kv substation thyristor aeg
Text: ABB Review The corporate technical journal of the ABB Group www.abb.com/abbreview 3 / 2008 Pioneering spirits Power electronics revolution in high dc current IGBT: aA tiny chip with a huge impact page 19 measurement page 6 Team-mates: MultiMove functionality
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Text: VDRM ITGQM ITSM VT0 rT VDClink = = = = = = 4500 4000 35 1.15 0.21 2800 V A kA V Asymmetric Integrated GateCommutated Thyristor 5SHY 35L4512 mΩ Ω V Doc. No. 5SYA1233-00 Sep. 01 • Lowest on state voltage 2V @ 4000A • Optimized for low frequency (<100Hz) and
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100Hz)
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Abstract: IGCT thyristor ABB igct abb IGCT high voltage IGCT thyristor IGCT thyristor current max HFBR-1528 HFBR-2528 MTA-156 chopper igct
Text: VDRM ITGQM ITSM VT0 rT VDClink = = = = = = 4500 4000 35 1.15 0.21 2800 V A kA V Asymmetric Integrated GateCommutated Thyristor 5SHY 35L4512 mΩ Ω V Doc. No. 5SYA1233-00 Sep. 01 • Lowest on state voltage 2V @ 4000A • Optimized for low frequency (<100Hz) and
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100Hz)
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Abstract: IGCT IGCT thyristor ABB IGCT thyristor current max igct abb HFBR-1528 HFBR-2528 MTA-156 IGCT high voltage
Text: VDRM ITGQM ITSM VT0 rT VDClink = = = = = = 4500 3800 28 1.7 0.457 2800 V A kA V Asymmetric Integrated GateCommutated Thyristor 5SHY 35L4511 mΩ Ω V Doc. No. 5SYA1234-00 Sep. 01 • Highest snubberless turn off rating • Optimized for medium frequency <1kHz and
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Text: VDRM ITGQM ITSM VT0 rT VDClink = = = = = = 4500 4000 32 1.40 0.325 2800 V A kA V Asymmetric Integrated GateCommutated Thyristor 5SHY 35L4510 mΩ Ω V Doc. No. 5SYA1232-00 Sep. 01 • Highest snubberless turn off rating • Optimized for medium frequency <1kHz and
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