IGBT WITH V-I CHARACTERISTICS Search Results

IGBT WITH V-I CHARACTERISTICS Result Highlights (5)

Part	Manufacturer	Description
GT30J110SRA	Toshiba Electronic Devices & Storage Corporation	IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N)
TLP5702H	Toshiba Electronic Devices & Storage Corporation	Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L
TLP5705H	Toshiba Electronic Devices & Storage Corporation	Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L
TMPM4GQF15FG	Toshiba Electronic Devices & Storage Corporation	Arm Cortex-M4 processor with FPU Core Based Microcontroller/32bit/P-LQFP144-2020-0.50-002
TMPM4GRF20FG	Toshiba Electronic Devices & Storage Corporation	Arm Cortex-M4 processor with FPU Core Based Microcontroller/32bit/P-LQFP176-2020-0.40-002

IGBT WITH V-I CHARACTERISTICS Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
10N100U1 Abstract: RG150 Text: Low VCE sat IGBT with Diode High speed IGBT with Diode IXGH 10 N100U1 IXGH 10 N100AU1 VCES I C25 VCE(sat) 1000 V 1000 V 20 A 20 A 3.5 V 4.0 V Combi Packs Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 1000 V V CGR TJ = 25°C to 150°C; RGE = 1 MΩ	Original	PDF	N100U1 N100AU1 10N100U1 10N100AU1 10N100U1 RG150
SGU1N60XFD Abstract: No abstract text available Text: Preliminary IGBT CO-PAK SGU1N60XFD FEATURES I-PAK * High Speed Switching * Low Saturation Voltage : VCE sat = 2.5 V (@ Ic=0.5A) * High Input Impedance CO-PAK, IGBT with FRD : Trr = 50nS (typ.) APPLICATIONS C General Purpose Inverters * Lamp Ballast G E	Original	PDF	SGU1N60XFD SGU1N60XFD
3 phase UPS block diagram using IGBT Abstract: 1ED020I12-F EiceDRIVER SOLAR INVERTER infineon igbt power solar inverter 1ED020I12F H9218 single phase inverter IGBT driver 1ED020I12FA IGBt driver 1ed020I12-F Text: Product Brief EICEDRIVER Single Channel IGBT Driver I n f i n e o n E I C E D R I V E R™ 1 E D 0 2 0 I 1 2 - F a Applications is a single channel IGBT Driver IC providing galvanic isolation and bidirectional • Industrial drive signal transmission with high ambient temperature capability. It enables extremely	Original	PDF	1ED020I12-F 00A/1200V B152-H9218-X-X-7600 3 phase UPS block diagram using IGBT EiceDRIVER SOLAR INVERTER infineon igbt power solar inverter 1ED020I12F H9218 single phase inverter IGBT driver 1ED020I12FA IGBt driver 1ed020I12-F
G20N60 Abstract: 24n60au1 IXGH24N60AU1S IXGH24N60AU1 G24N60 IXYS IXGH24N60AU1 TO-247 Text: IXGH 24N60AU1 VCES IXGH 24N60AU1S I C25 VCE sat tfi HiPerFASTTM IGBT with Diode Combi Pack Symbol Test Conditions V CES TJ = 25°C to 150°C 600 V TJ = 25°C to 150°C; RGE = 1 MΩ 600 V V GES Continuous ±20 V V GEM Transient ±30 V I C25 TC = 25°C 48	Original	PDF	24N60AU1 24N60AU1S O-247 24N60AU1S) IXGH24N60AU1S IXGH24N60AU1 G20N60 IXGH24N60AU1S IXGH24N60AU1 G24N60 IXYS IXGH24N60AU1 TO-247
Untitled Abstract: No abstract text available Text: Power Module 1200V IGBT Family MG12300D-BN3MM Series 300A Dual IGBT RoHS Features • H igh short circuit capability,self limiting short circuit current • IGBT CHIP 1200V NPT technology • V CE(sat) with positive temperature coefficient • F ast switching and short	Original	PDF	MG12300D-BN3MM E71639 MG12300D-BN3MM
Untitled Abstract: No abstract text available Text: Power Module 1200V IGBT Family MG12300D-BN2MM Series 300A Dual IGBT RoHS Features • H igh short circuit capability,self limiting short circuit current • F ast switching and short tail current • IGBT3 CHIP Trench+Field Stop technology • V CE(sat) with positive	Original	PDF	MG12300D-BN2MM E71639 Uni2300D-BN2MM MG12300D-BN2MM
50N60AU1 Abstract: No abstract text available Text: HiPerFASTTM IGBT with Diode IXGK 50N60AU1 Combi Pack Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V I C25 TC = 25°C, limited by leads 75 A I C90	Original	PDF	50N60AU1 O-264 50N60AU1
DIM400XCM33-F000 Abstract: No abstract text available Text: DIM400XCM33-F000 IGBT Chopper Module DS5938-1.0 February 2009 LN26594 FEATURES Soft Punch Through Silicon Isolated MMC Base with AlN Substrates High Thermal Cycling Capability KEY PARAMETERS V CES V CE(sat) * (typ) IC (max) I C(PK) (max) 3300V 2.8 V 400A	Original	PDF	DIM400XCM33-F000 DS5938-1 LN26594) DIM400XCM33-F000
IXGP12N60U1 Abstract: diode fr 307 Text: Preliminary data IXGP12N60U1 VCES Low VCE sat IGBT with Diode IC VCE(sat) Combi Pack Symbol Test Conditions VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V I C25 TC = 25°C 24 A I C90	Original	PDF	IXGP12N60U1 IXGP12N60U1 diode fr 307
DIM300XCM45-F000 Abstract: No abstract text available Text: DIM300XCM45-F000 IGBT Chopper Module DS5918- 1.3 February 2009 LN26586 FEATURES Soft Punch Through Silicon Isolated AlSiC Base with AlN Substrates High Thermal Cycling Capability KEY PARAMETERS V CES V CE(sat) * (typ) IC (max) I C(PK) (max) 4500V 2.9V 300A	Original	PDF	DIM300XCM45-F000 DS5918- LN26586) DIM300XCM45-F000
IGBT 7000V Abstract: ge traction motor DIM200KSM65-K000 CC4400 IGBT 6500v L 3005 TRANSISTOR STK411-550G datasheet Text: DIM200KSM65-K000 Single Switch IGBT Module DS5819-1.0 November 2004 FEATURES • High Thermal Cycling Capability • Soft Punch Through Silicon • Isolated MMC Base with AlN Substrates KEY PARAMETERS V CES V CE sat * (typ) IC (max) I C(PK) (max) (LN23680)	Original	PDF	DIM200KSM65-K000 DS5819-1 LN23680) DIM200KSM65-K000 IGBT 7000V ge traction motor CC4400 IGBT 6500v L 3005 TRANSISTOR STK411-550G datasheet
ge traction motor Abstract: No abstract text available Text: DIM400XSM65-K000 Single Switch IGBT Module DS5808-1.0 November 2004 FEATURES • High Thermal Cycling Capability • Soft Punch Through Silicon • Isolated MMC Base with AlN Substrates KEY PARAMETERS V CES V CE sat * (typ) IC (max) I C(PK) (max) (LN23659)	Original	PDF	DIM400XSM65-K000 DS5808-1 LN23659) DIM400XSM65-K000 ge traction motor
ge traction motor Abstract: DIM400XSM65-K000 Text: DIM400XSM65-K000 Single Switch IGBT Module DS5808-1.1 October 2005 FEATURES • High Thermal Cycling Capability • Soft Punch Through Silicon • Isolated MMC Base with AlN Substrates KEY PARAMETERS V CES V CE sat * (typ) IC (max) I C(PK) (max) (LN24289)	Original	PDF	DIM400XSM65-K000 DS5808-1 LN24289) DIM400XSM65-K000 ge traction motor
DIM800ECM33-F000 Abstract: KW transistor Text: DIM800ECM33-F000 IGBT Chopper Module DS5815-1.2 January 2009 LN26568 FEATURES Soft Punch Through Silicon Isolated AlSiC Base with AlN Substrates High Thermal Cycling Capability KEY PARAMETERS V CES V CE(sat) * (typ) IC (max) I C(PK) (max) 3300V 2.8V 800A	Original	PDF	DIM800ECM33-F000 DS5815-1 LN26568) DIM800ECM33-F000 KW transistor

DIM800NSM33-F000 Abstract: No abstract text available Text: DIM800NSM33-F000 Single Switch IGBT Module PDS5615-4.1 January 2009 LN26570 FEATURES Soft Punch Through Silicon Isolated AlSiC Base with AlN Substrates High Thermal Cycling Capability KEY PARAMETERS V CES V CE(sat) * (typ) IC (max) I C(PK) (max) 3300V 2.8V	Original	PDF	DIM800NSM33-F000 PDS5615-4 LN26570) DIM800NSM33-F000
DS5820-1 Abstract: 4400 transistor Text: DIM2400ESM17-E100 Single Switch IGBT Module DS5820-1.0 November 2004 FEATURES High Thermal Cycling Capability Soft Punch Through Silicon ✁ Isolated MMC Base with AlN Substrates ✁ KEY PARAMETERS V CES V CE sat * (typ) IC (max) I C(PK) (max) (LN23687)	Original	PDF	DIM2400ESM17-E100 DS5820-1 LN23687) DIM2400ESM17-E100 4400 transistor
Untitled Abstract: No abstract text available Text: □ I X Y S Low VrP, IGBT with Diode CE sat High Speed IGBT with Diode Combi Pack v CES IXGH 12N100U1 IXGH 12N100AU1 ^C25 V CE(sat) 1000 V 24 A 3.5 V 1000 V 24 A 4.0 V TO-247 SMD (Note 1) Maximum Ratings Symbol Test Conditions V v CES V CGR Td = 25°C to 150°C	OCR Scan	PDF	12N100U1 12N100AU1 O-247 IXGH12N100U1 IXGH12N100AU1
Untitled Abstract: No abstract text available Text: SGH13N60UFD FEATURES N-CHANNEL IGBT TO-3P * High Speed Switching * Low Saturation Volatge : VCE sat = 1.95 V (@ lc=6.5A) * High Input Impedance ’ CO-PAK, IGBT with FRD : Trr = 37nS (typ.) i APPLICATIONS * * * * * AC & DC Motor controls General Purpose Inverters	OCR Scan	PDF	SGH13N60UFD
siemens igbt BSM 150 gb 100 d Abstract: siemens igbt BSM 150 Gb 160 d Semiconductor Group igbt siemens igbt BSM 50 gb 100 d siemens igbt BSM 100 gb siemens igbt chip ScansUX69 siemens igbt BSM 100 siemens igbt BSM 400 gb siemens igbt BSM 25 gb 100 d Text: r i 3 r I i C f i l m i c v i t u r d o r U O I V e a I n v i u r ï D V J L -l n I o n r t K i o C - \J ^ IGBT Power Module • Haif-bridge ' • including fast free-wheeiing diodes 'jm • Package with insulated metai base piate VM4UJ0/3 Type ^CE Package	OCR Scan	PDF	C67076-A2105-A67 Oct-13-1995 siemens igbt BSM 150 gb 100 d siemens igbt BSM 150 Gb 160 d Semiconductor Group igbt siemens igbt BSM 50 gb 100 d siemens igbt BSM 100 gb siemens igbt chip ScansUX69 siemens igbt BSM 100 siemens igbt BSM 400 gb siemens igbt BSM 25 gb 100 d
siemens igbt BSM 150 gb 100 d Abstract: siemens igbt BSM 100 gb siemens igbt BSM 150 Gb 160 d siemens igbt BSM 50 gb 120 d siemens igbt BSM 300 siemens igbt chip siemens igbt BSM 100 Text: r i 3 r I i C f i l m i c v i t u r d o r U O I V e a I n v i u r ï D V J L -l n I o n r t K i o C - \J ^ IGBT Power Module • Haif-bridge ' • including fast free-wheeiing diodes 'jm • Package with insulated metai base piate VM4UJ0/3 Type ^CE Package	OCR Scan	PDF	C67076-A2105-A67 Oct-13-1995 Oct-13-1995 siemens igbt BSM 150 gb 100 d siemens igbt BSM 100 gb siemens igbt BSM 150 Gb 160 d siemens igbt BSM 50 gb 120 d siemens igbt BSM 300 siemens igbt chip siemens igbt BSM 100
Untitled Abstract: No abstract text available Text: HiPerFAST IGBT with Diode VCES I IXGH22N50BU1 ix g h 22N50BU i s = 500 V = 44 A Preliminary data Symbol Test Conditions Maximum Ratings V VCGfl T, = 25°C to 150°C T , = 25°C to 150°C; RGE = 1 Mi2 500 500 V V VGES VGEM Continuous T ransient ±20 ±30	OCR Scan	PDF	IXGH22N50BU1 22N50BU B2-13 22N50BU1 22NS0BU1S ----------------TVJ-125
Untitled Abstract: No abstract text available Text: n î Y V JlQO ÌmI X A HiPerFAST IGBT with HiPerFRED IXGN 50N60BD3 V CES I C25 V CE sat = 600 V = 75 A = 2.5 V Buck configuration Preliminary data sheet Sym bol tù ¡ l i Test C onditions V CES ^ = 25°C to 150°C 600 V v CGR ^ = 25°C to 150°C; RGE = 1 MQ	OCR Scan	PDF	50N60BD3 OT-227B, 50N60BD3
IRGPH40KD2 Abstract: CEE 16a INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST Text: P D - 9.1250 International I IR e c t i f i e r IRGPH40KD2 Provisional Short Circuit Rated UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE F e a tu re s • S h o rt circu it - 1 0 \|js @ 125°C , V GE = 10V V c e s = 1200V	OCR Scan	PDF	IRGPH40KD2 O-247AC O-247AD) IRGPH40KD2 CEE 16a INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST
Untitled Abstract: No abstract text available Text: Preliminary Data Sheet International [iör]Rectifier IRGPC40MD2 Short Circuit Rated Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • PD - 9.1084 V ces = 600V Short circuit rated -10ps @ 125°C, V qe = 15V	OCR Scan	PDF	IRGPC40MD2 -10ps 10kHz) 125-C 00A/JJS dutyfactors01% O-247AC C-398

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IGBT WITH V-I CHARACTERISTICS Search Results

IGBT WITH V-I CHARACTERISTICS Result Highlights (5)

IGBT WITH V-I CHARACTERISTICS Datasheets Context Search

10N100U1

SGU1N60XFD

3 phase UPS block diagram using IGBT

G20N60

Untitled

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50N60AU1

DIM400XCM33-F000

IXGP12N60U1

DIM300XCM45-F000

IGBT 7000V

ge traction motor

ge traction motor

DIM800ECM33-F000

DIM800NSM33-F000

DS5820-1

Untitled

Untitled

siemens igbt BSM 150 gb 100 d

siemens igbt BSM 150 gb 100 d

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Untitled

IRGPH40KD2

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