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    IGBT K 40 T 1202 Search Results

    IGBT K 40 T 1202 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    IGBT K 40 T 1202 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: IGBT MODULE Spec.No.IGBT-SP-12023 R3 MBM250H33E3 Preliminary Specification Silicon N-channel IGBT 3300V E3 version FEATURES  Soft switching behavior & low conduction loss: Soft low-injection punch-through High conductivity IGBT.  Low driving power due to low input capacitance MOS gate.


    Original     		PDF IGBT-SP-12023 MBM250H33E3

    Untitled

    Abstract: No abstract text available
    Text: IGBT MODULE Spec.No.IGBT-SP-12023 R1 MBM250H33E3 Preliminary Specification Silicon N-channel IGBT 3300V E3 version FEATURES ∗ Soft switching behavior & low conduction loss: Soft low-injection punch-through High conductivity IGBT. ∗ Low driving power due to low input capacitance MOS gate.


    Original     		PDF IGBT-SP-12023 MBM250H33E3

    Untitled

    Abstract: No abstract text available
    Text: IGBT MODULE Spec.No.IGBT-SP-12021R0 MBM1200E17F Target Specification Silicon N-channel IGBT 1700V F version FEATURES ∗ Soft switching behavior & low conduction loss: Soft low-injection punch-through with trench gate IGBT. ∗ Low driving power: Low input capacitance advanced trench gate.


    Original     		PDF IGBT-SP-12021R0 MBM1200E17F

    MBM1200E17F

    Abstract: No abstract text available
    Text: IGBT MODULE Spec.No.IGBT-SP-12021R0 MBM1200E17F Target Specification Silicon N-channel IGBT 1700V F version FEATURES ∗ Soft switching behavior & low conduction loss: Soft low-injection punch-through with trench gate IGBT. ∗ Low driving power: Low input capacitance advanced trench gate.


    Original     		PDF IGBT-SP-12021R0 MBM1200E17F MBM1200E17F

    Untitled

    Abstract: No abstract text available
    Text: IGBT MODULE Spec.No.IGBT-SP-12026 R4 P1 MBN1200F33F Preliminary Specification Silicon N-channel IGBT 3300V F version FEATURES ∗ Soft switching behavior, low switching loss & low conduction loss : Soft low-injection punch-through Advanced Trench High conductivity IGBT.


    Original     		PDF IGBT-SP-12026 MBN1200F33F 000cycles)

    IGBT K 40 T 1202

    Abstract: IGBT 1200A diode current 1200A M2 1200 DIODE semikron skiip 20 US1239
    Text: SKiiP 1202 GB 061 - 360 CTV Absolute Maximum Ratings Symbol Visol 4 Top ,Tstg 1) Conditions AC, 1min Operating / stor. temperature Values 2500 -25.+85 IGBT and Inverse Diode VCES VCC 5) Operating DC link voltage IC IGBT Tj 3) IGBT + Diode IF Diode IFM Diode, tp < 1 ms


    Original     		PDF IGBT11) IGBT K 40 T 1202 IGBT 1200A diode current 1200A M2 1200 DIODE semikron skiip 20 US1239

    US1239

    Abstract: No abstract text available
    Text: SKiiP 1202 GB 061 - 360 CTV Absolute Maximum Ratings Symbol Visol 4 Top ,Tstg 1) Conditions AC, 1min Operating / stor. temperature Values 2500 -25.+85 IGBT and Inverse Diode VCES VCC 5) Operating DC link voltage IC IGBT Tj 3) IGBT + Diode IF Diode IFM Diode, tp < 1 ms


    Original     		PDF IGBT11) Rthjs10) US1239

    VRF2933FL

    Abstract: VRF164FL ARF463AP1 Non - Isolated Buck, application DRF1301
    Text: Power Products MICROSEMI POWER PORTFOLIOPortfolio 2014-2015 Power Products New image here TBD Power Semiconductors Power Modules RF Power MOSFETs Power Matters. About Microsemi Microsemi Corporation Nasdaq: MSCC offers a comprehensive portfolio of semiconductor and system


    Original     		PDF MS5-001-14 VRF2933FL VRF164FL ARF463AP1 Non - Isolated Buck, application DRF1301

    SP6-P

    Abstract: N-channel MOSFET 800v 50a to-247 SMPS 1000w IGBT REFERENCE DESIGN DRF1400 45A, 1200v n-channel npt series igbt APTES80DA120C3G APT35DL120HJ semiconductors cross reference IGBT triple modules 100A 2000W mosfet power inverter
    Text: Power Matters POWER PORTFOLIO 2011-2012 Power Semiconductors Power Modules RF Power MOSFETs Power Products Group About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984.


    Original     		PDF 10F-A, SP6-P N-channel MOSFET 800v 50a to-247 SMPS 1000w IGBT REFERENCE DESIGN DRF1400 45A, 1200v n-channel npt series igbt APTES80DA120C3G APT35DL120HJ semiconductors cross reference IGBT triple modules 100A 2000W mosfet power inverter

    BERULUB FR 16 B

    Abstract: circuit diagram of 5kw smps full bridge thyristor aeg UC3854 5kw harmer simmons BERULUB FR 16 Grease Berulub FR 16 Berulub FR 66 5kw smps pfc ups PURE SINE WAVE schematic diagram
    Text: Reliability Reliability General Power semiconductors used in high power electronic equipment are exposed to different conditions compared to plastic encapsulated components applied in equipment used for communication electronics. Controlling and converting of high power


    Original     		PDF IXBH40N160, BERULUB FR 16 B circuit diagram of 5kw smps full bridge thyristor aeg UC3854 5kw harmer simmons BERULUB FR 16 Grease Berulub FR 16 Berulub FR 66 5kw smps pfc ups PURE SINE WAVE schematic diagram

    smps 1000W

    Abstract: 600V 300A igbt dc to dc boost converter SP6-P DRF1400 smps 500w half bridge DRF1300 1000w inverter MOSFET 1000W solar power inverter APT30GT60BRG 3000w inverter mosfet circuit
    Text: 1 About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984. Our focus is on high voltage, high power and high performance applications. Our commitment is to maintain


    Original     		PDF des691 10F-A, smps 1000W 600V 300A igbt dc to dc boost converter SP6-P DRF1400 smps 500w half bridge DRF1300 1000w inverter MOSFET 1000W solar power inverter APT30GT60BRG 3000w inverter mosfet circuit

    BERULUB FR 16

    Abstract: ixys vuo 52-16 ups PURE SINE WAVE schematic diagram Vienna Rectifier TL 82036 BERULUB FR 43 UC3858 schema inverter welding veridul BERULUB FR 16 B
    Text: Application Notes & Technical Information Volume 2 Volume 1 Contents Title Page Standard IGBT "G" Series M1 - 2 What is a HiPerFET Power Mosfet? M1 - 3 New 1600 V BIMOSFET Transistors Open up New Appl. M1 - 5 Comparative Performance of BIMOSFET in FLY Back Converter Circuits


    Original     		PDF ISOPLUS247 UC3854A UC3854B DN-44, TDA4817 BERULUB FR 16 ixys vuo 52-16 ups PURE SINE WAVE schematic diagram Vienna Rectifier TL 82036 BERULUB FR 43 UC3858 schema inverter welding veridul BERULUB FR 16 B

    ATV61HU75N4Z

    Abstract: ATV58Hd79N4X ATV61HU30M3T1 ATV58HD46N4ZU ATV58HU90M2ZU ATV71HU75N4 ATV61HU22S6X ATV71HU30N4 wiring diagram altivar 61 Power board vx5a1hc1622
    Text: AC Drives and Soft Starters Pricing Guide 8800PL9701R01/14 2014 Class 8800 Altivar 61 Altivar 312 Altistart 48 Altivar 71 E-Flex Altivar 12 S-Flex 212 Altistart 22 Altistart 01 M-Flex PowerGard Altivar 32 CONTENTS Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Page


    Original     		PDF 8800PL9701R01/14 8800PL9701R08/13 ATV61HU75N4Z ATV58Hd79N4X ATV61HU30M3T1 ATV58HD46N4ZU ATV58HU90M2ZU ATV71HU75N4 ATV61HU22S6X ATV71HU30N4 wiring diagram altivar 61 Power board vx5a1hc1622

    transistor marking code 12W SOT-23

    Abstract: MGB20N40CL laptop charging crb kp series stepper motor japan servo co 2n3773 power Amplifier circuit diagrams MJ2955 TRANSISTOR pwm brush dc motor controller sg3526 SG3526 boost controller for PWM fan tl494 tip122 tip127 mosfet audio amp
    Text: SG388/D Rev. 1, Aug-1999 ON Semiconductor PUBLICATION ORDERING INFORMATION USA/EUROPE Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5193, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada


    Original     		PDF SG388/D Aug-1999 r14153 transistor marking code 12W SOT-23 MGB20N40CL laptop charging crb kp series stepper motor japan servo co 2n3773 power Amplifier circuit diagrams MJ2955 TRANSISTOR pwm brush dc motor controller sg3526 SG3526 boost controller for PWM fan tl494 tip122 tip127 mosfet audio amp

    ac drives ls 600 manual

    Abstract: 20-HIM-A3 20D-STEG-B1 20-HIM-A3 Fault codes 20-HIM-A3 powerflex BAY38 ac drives ls 600 manual programming 20D-P2-ENC0 20D-DL2-ENET0 rockwell powerflex 750 series wiring diagram
    Text: PowerFlex 700L TECHNICAL DATA LIQUID-COOLED ADJUSTABLE FREQUENCY AC DRIVES PowerFlex 700L Technical Data Table of Contents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Page Product Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3


    Original     		PDF 20L-TD001A-EN-P ac drives ls 600 manual 20-HIM-A3 20D-STEG-B1 20-HIM-A3 Fault codes 20-HIM-A3 powerflex BAY38 ac drives ls 600 manual programming 20D-P2-ENC0 20D-DL2-ENET0 rockwell powerflex 750 series wiring diagram

    Untitled

    Abstract: No abstract text available
    Text: 5EMIKRON Symbol Conditions1> Viso, 4 AC, 1min o—I Ü /— >I Q SKiiP 1202 GB 061 - 360 CTV Absolute Maximum Ratings Operating / stor. temperature SKiiPPACK Values Units 2500 V -25.+85 °C 600 400 1200 -40.+150 1200 2400 12000 720 V V A °C A A A kAs2


    OCR Scan     		PDF B7-11 M8-14

    hcpl 3130

    Abstract: V0 3150 optocoupler A 3150 ic hp 3150 IGBT K 40 T 1202
    Text: W hnl H EW LETT 0 PT0 C0 UPLERS mLHM P A C K A R D 0.5 Amp Output Current IGBT Gate Drive O ptocoupler Technical Data HCPL-3150 Features Applications • 0.5 A Minimum Peak Output Current • 15 kV/|Is Minimum Common Mode Rejection CMR at VCM = 1500 V • 1.0 V Maximum Low Level


    OCR Scan     		PDF HCPL-3150 UL1577 hcpl 3130 V0 3150 optocoupler A 3150 ic hp 3150 IGBT K 40 T 1202

    hp 3150

    Abstract: IGBT K 40 T 1202
    Text: W fip l H E W L E T T m L ftm P A C K A R D 0.5 Amp Output Current IGBT Gate Drive Optocoupler Technical Data HCPL-3150 Features Applications • 0.5 A Minimum Peak Output Current • 15 kV/|is Minimum Common Mode Rejection CMR at VCM = 1500 V • 1.0 V Maximum Low Level


    OCR Scan     		PDF HCPL-3150 UL1577 hp 3150 IGBT K 40 T 1202

    2sk1058 equivalent

    Abstract: MBM300BS6 Hitachi MOSFET 2SK1270 transistor 2sk 12 2sk1645 2SK975 equivalent equivalent transistor 2sk 2SK1058 MOSFET APPLICATION NOTES 2SC297
    Text: JfHITACHI POWER TRANSISTORS 1 Contents Page 1. discrete and module devices New Degree of Freedom Hitachi's Power Transistors cover all field applications ranging from low to high frequ encies, also su itab le for fullautomated assembly processes such as surface-mount devices eg. UPAK, MPAK,


    OCR Scan     		PDF O220F SP-10 SP-12 SP-12TA 1560D 2sk1058 equivalent MBM300BS6 Hitachi MOSFET 2SK1270 transistor 2sk 12 2sk1645 2SK975 equivalent equivalent transistor 2sk 2SK1058 MOSFET APPLICATION NOTES 2SC297

    skiip gb 120

    Abstract: No abstract text available
    Text: s e M IK R D n SKiiP 402 GB 120 - 201 WT Absolute Maximum Ratings | Conditions IGBT & Inve rse Diode Vces Operating DC link voltage Vcc 11* Theatsink = 25 °C lc Theatsink = 25 °C; tp < 1 ms Icm IGBT & Diode T j3 V is o ,4» AC, 1 min. Theatsink = 25 °C


    OCR Scan     		PDF 613bb71 QQ05Q01 ai3bb71 0GQ50G3 00G5D04 skiip gb 120

    IGBT K 40 T 1202

    Abstract: 40 t 1202 igbt BUP306D
    Text: SIEMENS BUP306D IGBT With Antiparallel Diode Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Including fast free-wheel diode Type BUP 306D VCE h 1200V 23A Pin 1 Pin 2 Pin 3 G C E Package Ordering Code


    OCR Scan     		PDF O-218AB BUP306D Q67040-A4222-A2 SII003 IGBT K 40 T 1202 40 t 1202 igbt BUP306D

    Untitled

    Abstract: No abstract text available
    Text: TF1208 TOSHIBA TOSHIBA SOLID STATE IGBT GATE DRIVER MODULE T F 1 20 8 Unit in mm TOSHIBA TF1208 is the IGBT gate driver designed for use with TOSHIBA Insulated Gate Bipolar Transistor Module and it includes the optical isolator and IGBT gate driver circuit. Using this driver, you can design high reliability


    OCR Scan     		PDF TF1208 TF1208 0/16mA 200ii

    IGBT K 40 T 1202

    Abstract: No abstract text available
    Text: TOSHIBA TF1207 TOSHIBA SOLID STATE IGBT GATE DRIVER MODULE T F 1 20 7 Unit in mm TOSHIBA TF1207 is the IGBT gate driver designed for use with TOSHIBA Insulated Gate Bipolar Transistor odule and it includes the optical isolator and IGBT gate driver circuit.


    OCR Scan     		PDF TF1207 TF1207 IGBT K 40 T 1202

    IGBT K 40 T 1202

    Abstract: 40 t 1202 igbt
    Text: TOSHIBA TF1206 TOSHIBA SOLID STATE IGBT GATE DRIVER MODULE T F 1 ? fl f i TOSHIBA TF1206 is the IGBT gate driver designed for use U nit in mm ÏÏTOT- with TOSHIBA Insulated Gate Bipolar Transistor Module and it includes the optical isolator and IGBT gate driver


    OCR Scan     		PDF TF1206 TF1206 10-42A1A IGBT K 40 T 1202 40 t 1202 igbt