PDL-7557-1
Abstract: PDL-76 PDL-401 PDL-288
Text: PAN-CODE Dot-Matrix Labels by Material Blank Labels by Material cont. GMC Vinyl Cloth - Indoor Applications (cont.) Part Number Electronic Labeling • Ideal for temporary marking of chips, boards or IC’s • Label is removable without leaving any adhesive residue
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PDL-19-1
PDL-19
PDL-19-10
PDL-288
PDL-291
PDL-253
PDL-253-10
PDL-264
PDL-264-10
PDL-181
PDL-7557-1
PDL-76
PDL-401
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Untitled
Abstract: No abstract text available
Text: SUT121G Dual NPN Bipolar transistor Descriptions • General purpose amplifier • Recommended for LED Drive Application Features • Thermally Enhanced Power PKG • Low saturation: VCE sat = 0.5V Max • 2 NPN chips in TESOP-8 Package TESOP-8 Ordering Information
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SUT121G
SUT121
KSD-T7K003-000
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Untitled
Abstract: No abstract text available
Text: SUT041G Dual NPN Bipolar transistor Descriptions • General purpose amplifier • Recommended for LED Drive Application Features • Thermally Enhanced Power PKG • Low saturation: VCE sat = 0.5V Max • 2 NPN chips in TESOP-8 Package TESOP-8 Ordering Information
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SUT041G
SUT041
KSD-T7K001-000
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Untitled
Abstract: No abstract text available
Text: SUT161G Dual NPN Bipolar transistor Descriptions • General purpose amplifier • Recommended for LED Drive Application Features • Thermally Enhanced Power PKG • Low saturation: VCE sat = 0.5V Max • 2 NPN chips in TESOP-8 Package TESOP-8 Ordering Information
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SUT161G
SUT161
KSD-T7K004-000
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Untitled
Abstract: No abstract text available
Text: SUT061G Dual NPN Bipolar transistor Descriptions • General purpose amplifier • Recommended for LED Drive Application Features • Thermally Enhanced Power PKG • Low saturation: VCE sat = 0.4V Max • 2 NPN chips in TESOP-8 Package TESOP-8 Ordering Information
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SUT061G
SUT061
KSD-T7K002-000
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Untitled
Abstract: No abstract text available
Text: SUTP052G Dual PNP Bipolar transistor Descriptions • General purpose amplifier • Recommended for LED Drive Application Features • Thermally Enhanced Power PKG • Low saturation voltage: VCE sat =-0.15V Typ. @ IC=-1A, IB=-50mA • Large collector current capacity: IC=-2A
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SUTP052G
-50mA
SUTP052
KSD-T7K005-000
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SUT466N
Abstract: KSD-T5P007-000
Text: SUT466N Semiconductor Epitaxial planar PNP silicon transistor Descriptions • Complex type bipolar transistor Features • Reduce quantity of parts and mounting cost • High collector power dissipation : PC=500mW Max. • 2 PNP Chips in SOT-26 PKG Package : SOT-26
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SUT466N
500mW
OT-26
OT-26
KSD-T5P007-000
SUT466N
KSD-T5P007-000
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Untitled
Abstract: No abstract text available
Text: SUT466N Epitaxial planar PNP silicon transistor Descriptions • Complex type bipolar transistor Features • Reduce quantity of parts and mounting cost • High collector power dissipation : PC=500mW Max. • 2 PNP Chips in SOT-26 PKG Package : SOT-26 Ordering Information
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SUT466N
500mW
OT-26
OT-26
KSD-T5P007-001
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SUT041C
Abstract: No abstract text available
Text: SUT041C Dual NPN Bipolar transistor Descriptions • General purpose amplifier • Recommended for LED Drive Application Features • Thermally Enhanced Power PKG • Low saturation: VCE sat = 0.5V Max • 2 NPN chips in TESOP-8M Package TESOP-8M Ordering Information
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SUT041C
KSD-T7L001-000
SUT041C
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SUT465N
Abstract: npn-pnp dual
Text: SUT465N Semiconductor Dual NPN+PNP complementary Bipolar transistor Descriptions • Complex type bipolar transistor Features • Reduce quantity of parts and mounting cost • High collector power dissipation : PC=500mW Max. • 2 NPN+PNP Chips in SOT-26 PKG
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SUT465N
500mW
OT-26
OT-26
KSD-T5P006-000
SUT465N
npn-pnp dual
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npn-pnp dual
Abstract: dual npn-pnp sut465n
Text: SUT465N Dual NPN+PNP complementary Bipolar transistor Descriptions • Complex type bipolar transistor Features • Reduce quantity of parts and mounting cost • High collector power dissipation : PC=300mW Max. • 2 NPN+PNP Chips in SOT-26 PKG Package : SOT-26
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SUT465N
300mW
OT-26
OT-26
KSD-T5P006-001
npn-pnp dual
dual npn-pnp
sut465n
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Untitled
Abstract: No abstract text available
Text: PL611-01 Programmable Clock T M FEATURES • XIN,FIN 1 GND 2 CLK0 3 CLK1 4 8 XOUT 7 CLK2,OE,PDB,FSEL 6 NC 5 VDD SOP-8 MSOP-8 CLK1 1 GND 2 XIN, FIN 3 PL611-01 Advanced programmable PLL design Very low Jitter and Phase Noise 30-70ps Pk-Pk typical
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PL611-01
30-70ps
200MHz
10MHz-30MHz
75MHz
200MHz
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XTAL 50MHZ
Abstract: clock 1.8v osc SC70-6L SOT23-6 Marking TM PL611S-02-XXXGC
Text: PL611s-02 1.8V-3.3V PicoPLL TM , World’s Smallest Programmable Clock FEATURES DESCRIPTION • Lowest-power, smallest Programmable PLL • Very low Jitter and Phase Noise 30-70ps Pk-Pk typical • Output frequency up to: o 133MHz @ 1.8V operation o 166MHz @ 2.5V operation
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PL611s-02
30-70ps
133MHz
166MHz
200MHz
50ppm
10MHz-50MHz
SC70reserves
XTAL 50MHZ
clock 1.8v osc
SC70-6L
SOT23-6 Marking TM
PL611S-02-XXXGC
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CS-007
Abstract: Amkor Electronics Amkor mold compound
Text: LEADFRAME data sheet FusionQuad Body Exposed Pad Size mm Size (mm) 176 ld 14 x 14 6.5 x 6.5 A Electrical: Theta JA (°C/W) by Velocity (m/s) 1.0 2.5 24.6 19.9 17.9 Body Pad Size Size Pkg (mm) 14 x 14 Inductance Capacitance Resistance (mm) Lead 6.5 x 6.5 176 ld
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ic 4001
Abstract: TTC-4001 transformer 4001
Text: REV. S ta tu s PRELIMINARY 0 2 /0 3 /0 0 MP PRELIMINARY 1 CHANGED PKG. TYPE 0 8 /1 8 /0 0 MP A D SL transform er designed for use with Lucent A D SL IC chip Wildwire A. Electrical Specifications @ 2 5 °C 1. Prim ary (Line side) Impedance; 100Q 2. Secondary (IC side) Impedance; 100Q
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10KHz,
05Vrms
12/iH
100KHz,
1875Vrms
TTC-4001,
P-A1-12331
ACAD\TTC\A1123311
TTC-4001
ic 4001
TTC-4001
transformer 4001
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TTC-4000
Abstract: No abstract text available
Text: REV. S ta tu s PRELIMINARY 0 2 /0 3 /0 0 MP PRELIMINARY 1 CHANGED PKG. TYPE 0 8 /2 2 /0 0 MP A D SL transform er designed for use with Lucent A D SL IC chip Wildwire A. Electrical Specifications @ 2 5 °C 1. Prim ary (Line side) Impedance; 100Q 2. Secondary (IC side) Impedance; 10 0 0
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10KHz,
05Vrms
12//H
100KHz,
1875Vrms
TTC-4000,
P-A1-12345
ACAD\TTC\A1123451
TTC-4000
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smd diode a5
Abstract: DG1J2A smd diode marking a5 SMD MARKING CODE vk SHINDENGEN DIODE S71S
Text: Schottky Barrier Diode single Diode DG1J2A m n m o u t lin e Package G1F 20V 1.5A 3.5 Feature • Ö 'J ^ S M D |S711 • Ultra-small SMD • iS iS S =0.8 mm • I r= 10yA Unit I mm Weight 0.01 1r Typ 7 • Ultla-thin PKG=0.8mm • Low Ir=10a/A Cathode m ark
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D180SC4M
Abstract: marking aa diode
Text: Schottky Barrier Diode Diode Module M Hïïm OUTLINE Package I Module D180SC4M Unit : mm W eight 62R T yp > 3-M4 nui thickness = 3.2 40 V 180A 2 Q Feature öi° • High lo Rating-Module-PKG •« V f • Low V f • 8 jc ô V J 'Î l' • Small 9 je £>
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D180SC4M
D180SC4M
J533-1
marking aa diode
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2.4 GHz Bandpass Filters
Abstract: lot date code panasonic fr lot date code panasonic
Text: Issu e NO. & fr Date Of : Issue : TlLC-05006 2 0 0 5 ^ 2 ^ 2 4 El February 24,2005 % îï e % Classification: mm. New LJ Change LJ To Digj-Kev I» Pk f i Îü ÏË PRODUCT SPECIFICATION FOR INFORMATION m s> « m Product D escription pp nn -sr Product Part Num ber
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TlLC-05006
ELB2A007
ELB2A007
151-LC2A005
2.4 GHz Bandpass Filters
lot date code panasonic fr
lot date code panasonic
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE ObE T> • t.b53^31 001SQT3 T ■ P K .B 3 2 U U 1 U PKB32003U PKB32005U M A IN T E N A N C E T Y P E S for new design use PTB32001X, PTB32003X, PTB32005X T - 33 - $ T- 33-0*7 MICROWAVE POWER TRANSISTORS N-P-N silicon transistors for use in common-base class-B power amplifiers up to 3 GHz.
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001SQT3
PKB32003U
PKB32005U
PTB32001X,
PTB32003X,
PTB32005X)
PKB32001U
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE DbE D 1^ 53^31 001506*1 7 • PKB23001U PKB23003U PKB23005U MAINTENANCE TYPE replaced by PTB23001X/PTB23003X/PTB23005X 3 3 - O X f - 23-07 MICROWAVE POWER TRANSISTORS NPN silicon transistors primarily intended for use in space, military and professional applications up
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PKB23001U
PKB23003U
PKB23005U
PTB23001X/PTB23003X/PTB23005X)
PKB23001U
PKB23003U
April19B5l
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wc smd diode
Abstract: smd marking wc DE5S4M DIODE smd marking MO DIODE 56 SMD
Text: Schottky Barrier Diode wnnm o u t l i n e Single Diode DE5S4M U nit! mm Package : E-pack Weight 0.326g T yp 40V 5A Feature • SMD • SMD • P rrsm T’y V 3 > x ( S lil i • Prrsm Rating Typ«* No. 1 High lo Rating -Small-PKG • 'J '5 L '* ! g ; S § a
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J53Z-1)
wc smd diode
smd marking wc
DE5S4M
DIODE smd marking MO
DIODE 56 SMD
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RTC3001
Abstract: RTC3003 RTC3005 PKB32001U PKB32003U PKB32005U PTB32001X PTB32003X PTB32005X 32005U
Text: N AMER PHILIPS/DISCRETE QbE » • bbSBTBl 0015CH3 T ■ p k . B 3 2 u u iu PKB32003U PKB32005U MAINTENANCE TYPES for new design use PTB32001X, PTB32003X, PTB32005X M ICRO W AVE POWER TRANSISTO RS N-P-N silicon transistors for use in common-base class-B power amplifiers up to 3 GHz.
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PTB32001X,
PTB32003X,
PTB32005X)
01S0T3
PKB32003U
PKB32005U
PKB32001U
PKB32001U
32003U
32005U
RTC3001
RTC3003
RTC3005
PKB32005U
PTB32001X
PTB32003X
PTB32005X
32005U
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D360SC6M
Abstract: L017
Text: Schottky Barrier Diode Diode Module •¿m u OUTLINE Package I Module D360SC6M Unit : mm W eight 66R T yp> Isi Ö 51 3-M4 nui thickness = 3.2 60V 360A p, Feature •« V • High lo Rating-Module-PKG • Low V f • Small 9 je f • 8 jcÖ ^/JV c^L' 0 1 °
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D360SC6M
CJ533-1
D360SC6M
L017
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