transistor j109
Abstract: transistor dg sot-23 J109 J110 MMBFJ108 PN2222N CBVK741B019 F63TNR J108 J108-110
Text: J108 / J109 / J110 / MMBFJ108 MMBFJ108 J108 J109 J110 G S SOT-23 D Mark: I8 G S TO-92 NOTE: Source & Drain are interchangeable D N-Channel Switch This device is designed for analog or digital switching applications where very low on resistance is mandatory. Sourced from Process 58.
|
Original
|
PDF
|
MMBFJ108
OT-23
transistor j109
transistor dg sot-23
J109
J110
MMBFJ108
PN2222N
CBVK741B019
F63TNR
J108
J108-110
|
transistor j109
Abstract: MMBFJ108 J108 - TRANSISTOR I8 SOT23 CBVK741B019 F63TNR J108 J108-110 J109 J110
Text: J108 / J109 / J110 / MMBFJ108 MMBFJ108 J108 J109 J110 G S SOT-23 D Mark: I8 G S TO-92 NOTE: Source & Drain are interchangeable D N-Channel Switch This device is designed for analog or digital switching applications where very low on resistance is mandatory. Sourced from Process 58.
|
Original
|
PDF
|
MMBFJ108
OT-23
transistor j109
MMBFJ108
J108 - TRANSISTOR
I8 SOT23
CBVK741B019
F63TNR
J108
J108-110
J109
J110
|
Untitled
Abstract: No abstract text available
Text: J108 / J109 / J110 / MMBFJ108 MMBFJ108 J108 J109 J110 G S SOT-23 G S Mark: I8 TO-92 D NOTE: Source & Drain are interchangeable D N-Channel Switch This device is designed for analog or digital switching applications where very low on resistance is mandatory. Sourced from Process 58.
|
Original
|
PDF
|
MMBFJ108
OT-23
|
Si3443DV
Abstract: P-Channel 200V MOSFET TSOP6 93795B
Text: PD- 93795B Si3443DV HEXFET Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel -2.5V Rated D A D 1 6 2 5 3 4 VDSS = -20V D G D S RDS on = 0.065Ω Top View Description These P-channel MOSFETs from International Rectifier
|
Original
|
PDF
|
93795B
Si3443DV
OT-23.
P-Channel 200V MOSFET TSOP6
93795B
|
IRLML2402
Abstract: EIA-541 7.5v voltage regulator SOT 23
Text: PD - 91257D IRLML2402 HEXFET Power MOSFET l l l l l l l Generation V Technology Ultra Low On-Resistance N-Channel MOSFET SOT-23 Footprint Low Profile <1.1mm Available in Tape and Reel Fast Switching D VDSS = 20V G RDS(on) = 0.25Ω S Description Fifth Generation HEXFETs from International Rectifier
|
Original
|
PDF
|
91257D
IRLML2402
OT-23
O-236AB)
EIA-481
EIA-541.
IRLML2402
EIA-541
7.5v voltage regulator SOT 23
|
IRLML2402
Abstract: EIA-541 XF 020 7.5v voltage regulator SOT 23
Text: PD - 91257D IRLML2402 HEXFET Power MOSFET l l l l l l l Generation V Technology Ultra Low On-Resistance N-Channel MOSFET SOT-23 Footprint Low Profile <1.1mm Available in Tape and Reel Fast Switching D VDSS = 20V G RDS(on) = 0.25Ω S Description Fifth Generation HEXFETs from International Rectifier
|
Original
|
PDF
|
91257D
IRLML2402
OT-23
O-236AB)
EIA-481
EIA-541.
IRLML2402
EIA-541
XF 020
7.5v voltage regulator SOT 23
|
IRLMS5703
Abstract: No abstract text available
Text: PD - 91413E IRLMS5703 HEXFET Power MOSFET l l l l Generation V Technology Micro6 Package Style Ultra Low Rds on P-Channel MOSFET D D G Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This
|
Original
|
PDF
|
91413E
IRLMS5703
EIA-481
EIA-541.
IRLMS5703
|
Micro6 Package
Abstract: IRLMS5703
Text: PD - 91413E IRLMS5703 HEXFET Power MOSFET l l l l Generation V Technology Micro6 Package Style Ultra Low Rds on P-Channel MOSFET D D G Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This
|
Original
|
PDF
|
91413E
IRLMS5703
EIA-481
EIA-541.
Micro6 Package
IRLMS5703
|
Untitled
Abstract: No abstract text available
Text: PD - 93756E IRLML6401 l l l l l l l Ultra Low On-Resistance P-Channel MOSFET SOT-23 Footprint Low Profile <1.1mm Available in Tape and Reel Fast Switching 1.8V Gate Rated HEXFET Power MOSFET * VDSS = -12V ' RDS(on) = 0.05Ω 6 Description These P-Channel MOSFETs from International Rectifier
|
Original
|
PDF
|
93756E
IRLML6401
OT-23
EIA-481
EIA-541.
|
Untitled
Abstract: No abstract text available
Text: MMBFJ270 MMBFJ270 P-Channel Switch G • This device is designed for low level analog switching sample and hold circuits and chopper stabilized amplifiers. • Sourced from process 88. S SOT-23 D Mark: 61S 1. Drain 2. Source 3. Gate Absolute Maximum Ratings* Ta=25°C unless otherwise noted
|
Original
|
PDF
|
MMBFJ270
OT-23
|
MMBFJ270
Abstract: I8 SOT23 process 88
Text: MMBFJ270 MMBFJ270 P-Channel Switch • This device is designed for low level analog switching sample and hold circuits and chopper stabilized amplifiers. • Sourced from process 88. G S SOT-23 D Mark: 61S 1. Drain 2. Gate 3. Source Absolute Maximum Ratings* Ta=25°C unless otherwise noted
|
Original
|
PDF
|
MMBFJ270
OT-23
MMBFJ270
I8 SOT23
process 88
|
diode marking 355 SOT23
Abstract: mosfet ir 840
Text: PD - 94947B IRLML6302PbF l l l l l l l l Generation V Technology Ultra Low On-Resistance P-Channel MOSFET SOT-23 Footprint Low Profile <1.1mm Available in Tape and Reel Fast Switching Lead-Free HEXFET Power MOSFET * VDSS = -20V ' 6 RDS(on) = 0.60Ω
|
Original
|
PDF
|
94947B
IRLML6302PbF
OT-23
EIA-481
EIA-541.
diode marking 355 SOT23
mosfet ir 840
|
diode sot-23 marking AG
Abstract: diode marking 355 SOT23 XF SOT-23 MJ marking sot23
Text: PD - 94974A IRLML2803PbF l l l l l l l l HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance N-Channel MOSFET SOT-23 Footprint Low Profile <1.1mm Available in Tape and Reel Fast Switching Lead-Free D VDSS = 30V G RDS(on) = 0.25Ω S Description
|
Original
|
PDF
|
4974A
IRLML2803PbF
OT-23
OT-23
EIA-481
EIA-541.
diode sot-23 marking AG
diode marking 355 SOT23
XF SOT-23
MJ marking sot23
|
HEADER 2X7 2.54MM
Abstract: MAX232A SO-16 BEYSCHLAG RS-486 R37-R39 SM0603 JP35 TSSOP-56 LED green sot halo TGSP
Text: Project name: EASY22504-R1 V1.1 Board Quantity: 1 Nr. Partnumber 1 C1.C7, C9.C20, C26.C41 2 C8, C24 3 C25 4 C22, C23 5 D9, D12.D15 6 D24.D29 7 D10, D11 F1.F4, F15.F20, F25.F28, F33, F34 8 9 F9, F10, F35.F40 F5.F8, F11.F14, F21.F24, F29.F32 10
|
Original
|
PDF
|
EASY22504-R1
55Note1:
com/acrobat/7926
com/specs/PI5C16212
HEADER 2X7 2.54MM
MAX232A SO-16
BEYSCHLAG
RS-486
R37-R39
SM0603
JP35
TSSOP-56
LED green sot
halo TGSP
|
|
|
W18 sot23
Abstract: ic w83 SOT343R bfp280tw SOT-343 BFP181TW
Text: Tem ic Semiconductors :m> # T 050I3 T050 (4) SOT23 60 Part Number v CEO Icnrax Plot 8t Tgjnti i s V mA # mW °C # SOT143 # SOT323 SOT343 Electrical characteristics ff at Ic hre a tlc and Gp at Ic and f VCE mA V MHz | raA dB mA MHz F at f and Ic dB MHz mA
|
OCR Scan
|
PDF
|
050I3)
OT143
OT323
OT343
BFR92AW
BFR93AW
BFS17AW
S852TW
BFR181TW
BFR182TW
W18 sot23
ic w83
SOT343R
bfp280tw
SOT-343
BFP181TW
|
transistor ECG 152
Abstract: Bt 2313 transistor outlines transistor ecg36 TRANSISTOR ecg 379 ECG157 123AP transistor ECG 332 Philips ECG 152 ECG 3041
Text: PHILIP S E C 6 INC S4E D Transistors cont d ECG Type ECG36 NPN-Si, Pwr Amp, Hi Speed ECG36MP* Switch (Compì to ECG37) MECG bbS3TSfl DDD714b (Maximum Ratings at Tc = 25°C Unless Otherwise Noted) Collector To Base Volts b v Cbo Description and Application
|
OCR Scan
|
PDF
|
DDD714b
ECG36
ECG36MP*
ECG37)
T48-1
ECG37
ECG37MCP
ECG36)
ECG36
ECG37
transistor ECG 152
Bt 2313
transistor outlines
transistor ecg36
TRANSISTOR ecg 379
ECG157
123AP
transistor ECG 332
Philips ECG 152
ECG 3041
|
W1p TRANSISTOR
Abstract: transistor w1P w1p npn SOT23 W1P W1P 59 transistor w1p 60 W1P 51 W1p 69 W1P 66 transistor W1P 50
Text: Philips Sem iconductors 1^53131 0025366 774 M A P X AMER P H I L I P S / D I S C R E T E Product specification b?E PNP 5 GHz wideband transistor DESCRIPTION ^ BFT92 PINNING PNP transistor in a plastic SOT23 envelope. PIN It is primarily Intended for use in RF
|
OCR Scan
|
PDF
|
BFT92
BFR92
BFR92A.
W1p TRANSISTOR
transistor w1P
w1p npn
SOT23 W1P
W1P 59 transistor
w1p 60
W1P 51
W1p 69
W1P 66 transistor
W1P 50
|
2D 1002 diode
Abstract: d3s marking DIODE D3S 90 MARKING tAN SOT-23 diode MARKING tAN SOT-23
Text: PD - 9 .1508C International IOR Rectifier IR L M S 1 5 0 3 HEXFET Power MOSFET • Generation V Technology • Micro6 Package Style • Ultra Low Rds on • N-Channel MOSFET V dss = 3 0 V RDS(on) = 0 .1 0 Î2 Description Fifth Generation H EXFETsfrom International Rectifier
|
OCR Scan
|
PDF
|
OT-23.
2D 1002 diode
d3s marking
DIODE D3S 90
MARKING tAN SOT-23 diode
MARKING tAN SOT-23
|
Untitled
Abstract: No abstract text available
Text: ; S v m Se m i ; 5YM5EMI SEMICONDUCTOR SOT -23 Plastic Encapsulate Transistors SOT — 23 BCX19LT1 TRANSISTOR NPN 1. BASE 2. EMITTER 3. COLLECTOR FEATURES Power dissipation Pen : 0.225 W (Tamb=25 °C) 2. I Collector current Icm : 1.3 0.5 r~ m A -E Collector base voltage
|
OCR Scan
|
PDF
|
BCX19LT1
OT-23
950TPY
037TPY
550REF
022REF
|
transistor pnp ecg 180
Abstract: Transistor 123AP 123AP transistor BU 102A transistor fet ecg transistor. ECG 123AP 4511 gm Bt 2313 transistor t18 FET ecg 123 transistor
Text: PHILIPS E C G INC S4E D Transistors icont'd ECG Type D escription and A p plicatio n • bbSBTEfl DDDTIH? &12 ■ E C G Maximum Ratings at T c = 25°C Unless Otherwise Noted) C ollector To Base V olts C ollector To E m itter V olts Base to E m itter V olts
|
OCR Scan
|
PDF
|
GGG71H7
ECG58
ECG59)
TB-35
T44-1
ECG59
ECG58)
ECG60
transistor pnp ecg 180
Transistor 123AP
123AP
transistor BU 102A
transistor fet ecg
transistor. ECG 123AP
4511 gm
Bt 2313
transistor t18 FET
ecg 123 transistor
|
Bt 2313
Abstract: Transistor 123AP transistor t18 FET transistor BD 263 transistor ECG 152 transistor ecg 226 123ap Philips ECG 152 ic 2429 ECG24
Text: PHILIPS E C G INC S4E D Transistors icont'd ECG Type Description and Application • bbSBTEfl DDDTIH? &12 ■ E C G Maximum Ratings at Tc = 25°C Unless Otherwise Noted) Collector To Base Volts b v Cbo Collector To Emitter Volts b v Ceo Base to Emitter Volts
|
OCR Scan
|
PDF
|
GGG71H7
ECG58
ECG59)
TB-35
T44-1
ECG59
ECG58)
ECG60
Bt 2313
Transistor 123AP
transistor t18 FET
transistor BD 263
transistor ECG 152
transistor ecg 226
123ap
Philips ECG 152
ic 2429
ECG24
|
Untitled
Abstract: No abstract text available
Text: SyrnSEMi SOT -23 Plastic Encapsulate Transistors 5YM5EMI SEMICONDUCTOR SOT — 23 MMBTA42LT1 TRANSISTOR NPN 1. BASE 2. EMITTER 3. COLLECTOR FEATURES Power dissipation PCM : 03 W (Tamb=25 °C) Collector current Icm : 0.3 A Collector base voltage V ( br ) cbo
|
OCR Scan
|
PDF
|
MMBTA42LT1
30MHz
MMBTA42LT1
OT-23
950TPY
550REF
037TPY
022REF
|
transistor ecg36
Abstract: transistor ECG 152 TRANSISTOR ecg 379 transistor. ECG 123AP transistor ECG 332 ecg 126 transistor TRANSISTOR ECG 69 TRANSISTOR Outlines ecg 123 transistor transistor pnp ecg 180
Text: PHILIP S E C 6 INC S4E D Transistors cont d ECG Type Description and Application ECG36 NPN-Si, Pwr Amp, Hi Speed ECG36MP* Switch (Compì to ECG37) • bbS3TSfl DDD714b MECG (Maximum Ratings at Tc = 25°C Unless Otherwise Noted) Collector To Base Volts b v Cbo
|
OCR Scan
|
PDF
|
DDD714b
ECG36
ECG36MP*
ECG37)
T48-1
ECG37
ECG37MCP
ECG36)
ECG36
ECG37
transistor ecg36
transistor ECG 152
TRANSISTOR ecg 379
transistor. ECG 123AP
transistor ECG 332
ecg 126 transistor
TRANSISTOR ECG 69
TRANSISTOR Outlines
ecg 123 transistor
transistor pnp ecg 180
|
Untitled
Abstract: No abstract text available
Text: INTEG R ATED CIRCUITS T O K O 38 Voltage Regulator ICs Surface Mounting u* X * 4ß TK112MDAM Series /TK112 DAU Series Features • Small difference between input and output voltages. (0.16V at lo = 60mA) • High precision output voltage (±2.4% or ±80mA)
|
OCR Scan
|
PDF
|
112MDAM
100nA
TK112COAM
OT23L
TK112QHAU
170/iA
400fiA
190mA
|
