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    HY6116 Price and Stock

    SK Hynix Inc HY6116AP-12

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics HY6116AP-12 502
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    Quest Components HY6116AP-12 24
    • 1 $14.79
    • 10 $9.86
    • 100 $9.86
    • 1000 $9.86
    • 10000 $9.86
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    HY6116AP-12 3
    • 1 $14.79
    • 10 $10.846
    • 100 $10.846
    • 1000 $10.846
    • 10000 $10.846
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    HY6116AP-12 1
    • 1 $14.79
    • 10 $9.86
    • 100 $9.86
    • 1000 $9.86
    • 10000 $9.86
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    SK Hynix Inc HY6116ALP-15

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics HY6116ALP-15 53 1
    • 1 $23.4
    • 10 $23.4
    • 100 $21.5982
    • 1000 $21.5982
    • 10000 $21.5982
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    Quest Components HY6116ALP-15 29
    • 1 $25.35
    • 10 $25.35
    • 100 $24.375
    • 1000 $24.375
    • 10000 $24.375
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    HY6116ALP-15 13
    • 1 $12.5106
    • 10 $8.3404
    • 100 $8.3404
    • 1000 $8.3404
    • 10000 $8.3404
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    SK Hynix Inc HY6116P-12

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics HY6116P-12 47 1
    • 1 $8.775
    • 10 $6.5813
    • 100 $5.4844
    • 1000 $5.4844
    • 10000 $5.4844
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    Quest Components HY6116P-12 37
    • 1 $11.7
    • 10 $8.775
    • 100 $7.8975
    • 1000 $7.8975
    • 10000 $7.8975
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    SK Hynix Inc HY6116AP-15

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    Bristol Electronics HY6116AP-15 27
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    Quest Components HY6116AP-15 28
    • 1 $15
    • 10 $10
    • 100 $9.25
    • 1000 $9.25
    • 10000 $9.25
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    HY6116AP-15 13
    • 1 $15
    • 10 $7.5
    • 100 $7.5
    • 1000 $7.5
    • 10000 $7.5
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    SK Hynix Inc HY6116AP-10

    IC,SRAM,2KX8,CMOS,DIP,24PIN,PLASTIC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components HY6116AP-10 28
    • 1 $15
    • 10 $10
    • 100 $9.25
    • 1000 $9.25
    • 10000 $9.25
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    HY6116AP-10 25
    • 1 $15
    • 10 $10
    • 100 $9.25
    • 1000 $9.25
    • 10000 $9.25
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    HY6116AP-10 12
    • 1 $15
    • 10 $10
    • 100 $10
    • 1000 $10
    • 10000 $10
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    Find more HY6116 price and stock on Findchips.com

    HY6116 Datasheets (14)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    HY6116 Hynix Semiconductor 2048 x 8 Bit CMOS Static RAM Scan PDF
    HY6116 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    HY6116-10 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    HY6116-12 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    HY6116-15 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    HY6116A Hynix Semiconductor 2048 x 8 Bit CMOS Static SRAM Scan PDF
    HY6116A-10 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    HY6116A-12 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    HY6116A-15 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    HY6116AL-10 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    HY6116AL-12 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    HY6116AL-15 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    HY6116ALP Unknown 2K x 8-bit CMOS SRAM Scan PDF
    HY6116AP Unknown 2K x 8-bit CMOS SRAM Scan PDF

    HY6116 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TC5118160

    Abstract: msm-561 TMS444000 msm561 M5M418165 M5M418160 tms44c256 TC5117405 HY514264 HY514260
    Text: New Page 1 DRAM 1Meg 1Mx1 256Kx4 FPM FPM Fujitsu MB81C100 MB81C4256 Goldstar GM71C100 GM71C4256 Hitachi HM511000 HM514256 Hyundai HY531000 HY534256 Micron MT4C1024 MT4C4256 Mitsubishi M5M41000 M5M44256 Nec UPD421000 UPD424256 Oki MSM511000 MSM514256 Samsung alt KM41C1000 KM44C256


    Original     		PDF 256Kx4 MB81C100 MB81C4256 GM71C100 GM71C4256 HM511000 HM514256 HY531000 HY534256 MT4C1024 TC5118160 msm-561 TMS444000 msm561 M5M418165 M5M418160 tms44c256 TC5117405 HY514264 HY514260

    TMS44C256

    Abstract: HY6116 CROSS REFERENCE sram mcm6264 ZMD cross reference SIMTEK cross reference HM50464 soj28 sop28 HM65664A HM6116 oki cross
    Text: ZMD Cross Reference List Density Organization Store Type 4Kbit 512 x 8 HardStore 16Kbit 2K x 8 CapStore PowerStore HardStore SoftStore PowerStore PowerStore 64Kbit 8K x 8 CapStore HardStore SoftStore PowerStore PowerStore 256Kbit 32K x 8 CapStore SoftStore


    Original     		PDF 16Kbit 64Kbit 256Kbit 600mil) 300mil) TMS44C256 HY6116 CROSS REFERENCE sram mcm6264 ZMD cross reference SIMTEK cross reference HM50464 soj28 sop28 HM65664A HM6116 oki cross

    HY6116-10

    Abstract: HY6116 HY6116-12 HY6116-15 Hyundai Semiconductor
    Text: HYUNDAI ELECTRONICS A3 dË| 4675088 HYUNDAI ELEC TR ON IC S MbTSOSÖ 0000003 E 83D 00083 ^ 4 6 -2 3 -1 2 jy rs i» « ' A ti t iR « L S jg g iy FEBRUARY 1986 FEATURES DESCRIPTION The HY6116 is a high speed, low power, 2048-word by 8-bit static CMOS RAM fabricated using highperformance CMOS process technology. This high


    OCR Scan     		PDF t-46-23-12 HY6116 2048-word HY6116-10 HY6116-12 HY6116-15 HY6116 100ns 120ns 150ns HY6116-10 HY6116-12 HY6116-15 Hyundai Semiconductor

    organizational structure samsung

    Abstract: NMS256X8 MICRON Cross Reference NMS256 256K RAM HM62256 MK6264 51256SL TC5565 "cross reference" MN44256 M5M5256
    Text: Static RAM Cross Reference STATIC RAM CROSS REFERENCE ORGANIZATIONAL STRUCTURE 2K 2K X X 32K 8K X e w/CE, OE 8 W/CE1, CE2 X 8 Stow 8 Slow COMPETITIVE VENDOR SH ARP MODEL LH5116 LH5118 LH51256 LH5164A AMD Am9128 Harris CDM6116 Hitachi HM6116A Hyundai HY6116


    OCR Scan     		PDF LH5116 Am9128 CDM6116 HM6116A HY6116 HM6116 MS6516 SRM2016 MK6116 CXK5816 organizational structure samsung NMS256X8 MICRON Cross Reference NMS256 256K RAM HM62256 MK6264 51256SL TC5565 "cross reference" MN44256 M5M5256

    Untitled

    Abstract: No abstract text available
    Text: HY6116A .V« *H Y UNDAI SEMICONDUCTOR M211201B-APR91 FEATURES DESCRIPTION The HY6116A is a high speed, low power, 2,048 words by 8-bit CM O S static RAM fabri­ cated using high performance CM OS process technology. This high reliability process cou­ pled with innovative circuit design techniques,


    OCR Scan     		PDF HY6116A M211201B-APR91 HY6116A

    HY6116ALP 10

    Abstract: HY6116ALP HY6116A HY6116AP HY6116
    Text: •HYUNDAI HY6116A Series SEMICONDUCTOR 2 K x 8-bit c m o s s r a m DESCRIPTION The HY6116A is a high-speed, low power 2,048 x 8-bits CMOS static RAM fabricated using high performance CMOS process technology. This high reliability process coupled with innovative circuit design techniques, yields


    OCR Scan     		PDF HY6116A -85/100/120/150ns 10A01 -10-MAY93 1DA01-10-MAY93 HY6116ALP 10 HY6116ALP HY6116AP HY6116

    CROSS MITSUBISHI

    Abstract: UPD446 tc55257 tmm2016 sony cross reference sgs thomson tmm2018 AKM6264 hm6264 IDT71256
    Text: SRAM CROSS REFERENCE PART DEVICE MANUFACTURER NUMBER MOSEL PART NO. PART DEVICE MANUFACTURER NUMBER MOSEL PART NO. 2K X 8 Fujitsu Goldstar Hitachi Hitachi Hyundai IDT NEC RCA SGS Thomson Toshiba Toshiba Toshiba UMC Winbond MB8416 GM76C28 HM6116 HM6216 HY6116


    OCR Scan     		PDF MS6516 CROSS MITSUBISHI UPD446 tc55257 tmm2016 sony cross reference sgs thomson tmm2018 AKM6264 hm6264 IDT71256

    HY6116ALP 10

    Abstract: hyundai HY6116ALP
    Text: HY6116A Series »HYUNDAI 2Kx 8-bit CMOS SRAM DESCRIPTION The HY6116A is a high-speed, low power and 2,048 x 8-bits CMOS static RAM fabricated using Hyundai’s high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit


    OCR Scan     		PDF HY6116A HY6116A HY6116Ahas speed-85/100/120/150ns 1DA01-11-MAY94 HL750Ã 0003bl7 55fX13 HY6116ALP 10 hyundai HY6116ALP

    HY6116A-10

    Abstract: HY6116A
    Text: D HY UN DA I E L E C T R O N I C S • 4b7S0flfl Q Q D Q 4 Q T b ■ HYNK M211201B-APR91 DESCRIPTION FEATURES The HY6116A is a high speed, low power, 2,048 words by 8-bit CM O S static RAM fabri­ cated using high performance CM OS process technology. This high reliability process cou­


    OCR Scan     		PDF M211201B-APR91 HY6116A 500mV OQGG414 T-46-23-12 HY6116A-10

    HY6116ALP

    Abstract: HY6116ALP 10 HY6116AP HY6116A hy6116 cmos series
    Text: HY6116A S e rie s «HYUNDAI 2Kx 8-bit CMOS SRAM DESCRIPTION The HY6116A is a high-speed, low power and 2,048 x 8-bits CMOS static RAM fabricated using Hyundai’s high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit


    OCR Scan     		PDF HY6116A HY6116Ahas speed-85/100/120/150ns 1DA01 -11-MAY94 00D3bl7 1DA01-11-MAY94 HY6116ALP HY6116ALP 10 HY6116AP hy6116 cmos series

    HY6116A-10

    Abstract: HY6116A
    Text: •HYUNDAI HY6116A SEMICONDUCTOR 2KX 8-Bit CMOS SRAM M211201A-MAV92 DESCRIPTION FEATURES The HY6116A is a high speed, low power, 2,048 words by 8-bit C M O S static RAM fabri­ cated using high perform ance CM OS process technology. This high reliability process cou­


    OCR Scan     		PDF HY6116A HY6116A M211201A-MAV92 speed-85/100/120/150ns HY6116A-10

    IMS1630

    Abstract: HY62256 SGS-Thomson HITACHI HM6116 DALLAS SEMICONDUCTOR Ds1235 MK4503 hm6116 cross UPD4361 SSM7188 MK4501
    Text: CROSS REFERENCE AMD SGS-THOMSON Group DALLAS Semiconductor SGS-THOMSON Group AM2147 IMS1203 DS2009 MK4501/H01 AM2148/9 IMS1223 DS2010 MK45H02 AM2167 IMS1403 DS2011 MK4503/H03 AM2168 IMS1423 or MK41 H68 DS2012 MK45H04 AM9126 MK6116 DS1210 MK48Z02 AM99C68 IMS1423 or MK41 H68


    OCR Scan     		PDF AM2147 AM2148/9 AM2167 AM2168 AM9126 AM99C68 AM99C88 AM99C89 AM67C4501 AM67C4502 IMS1630 HY62256 SGS-Thomson HITACHI HM6116 DALLAS SEMICONDUCTOR Ds1235 MK4503 hm6116 cross UPD4361 SSM7188 MK4501

    HY6116

    Abstract: HY6116A HY6116AL-10 HY61C16A-45 HY61C16A-55 HY61C16AL-25 HY61C16AL-35 HY61C16AL-45 HY61C16AL-55 HY61C16L-45
    Text: -51 16K X m % íi £ CC TAAC max ns) TCAC max (ns) 4 TOE max (ns) CMOS •■< + > TOH min (ns) TOD max (ns) ? S t a t i c RAM ( 2 0 4 8 x 8 ) ft tt € T»P min (ns) TDS min (ns) TDH min (ns) TWD min (ns) TWR max (ns) V D D or V C C (V) 2 4 P I N A m I DD


    OCR Scan     		PDF 2048x8) HY61C16A-45 HY61C16A-55 HYB1C1BA-70 HY61C16A30 IDT6U6SA15 1DT6116SA20 IDTB116SA25 IDT6UGLA15 IDT6116LA20 HY6116 HY6116A HY6116AL-10 HY61C16AL-25 HY61C16AL-35 HY61C16AL-45 HY61C16AL-55 HY61C16L-45

    Untitled

    Abstract: No abstract text available
    Text: H Y 2 K6x 81- B it1C M6OA /L S Static R A M ▲ £ £ £ £ £ ! DESCRIPTION FEATURES T h e H Y 6 1 1 6 A / L is a h igh speed, low power, 2,048-w ord by 8-bit C M O S static R A M fa b r i­ c a te d using h ig h - p e r f o r m a n c e C M O S process technology. This high reliability process co u p le d


    OCR Scan     		PDF 048-w

    hyundai

    Abstract: 256k x8 SRAM 5V 16MX8
    Text: PART NUMBER ♦HYUNDAI HY XX X X XX XXX X XX XX - XX X T SPEED HYUNDAI_ I HY : Memory Products PRODUCT GROUP 62 : Slow SRAM* 63 : Fast SRAM 67 : Sync. SRAM POWER SUPPLY_ BLANK : 5.0V V : 3.3V/3.0V PROCESS_ BLANK : CMOS B : BiCMOS


    OCR Scan     		PDF 120ns 150ns x8/x16) 11-MAY95 100ns hyundai 256k x8 SRAM 5V 16MX8