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SK Hynix Inc HY514400AJ-70
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	HY514400AJ-70		82			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Quest Components	HY514400AJ-70		235			1 $4.23 10 $2.115 100 $1.833 1000 $1.833 10000 $1.833	Buy Now
	HY514400AJ-70		167			1 $4.23 10 $4.23 100 $2.6085 1000 $2.6085 10000 $2.6085	Buy Now
	HY514400AJ-70		115			1 $4.23 10 $4.23 100 $2.6085 1000 $2.6085 10000 $2.6085	Buy Now
	HY514400AJ-70		26			1 $4.23 10 $2.115 100 $2.115 1000 $2.115 10000 $2.115	Buy Now
hyn HY514400AJ70 1M X 4, FAST PAGE MODE Fast Page DRAM, 1MX4, 70ns, CMOS, PDSO20
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
ComSIT USA	HY514400AJ70		120			1 - 10 - 100 - 1000 - 10000 -	Get Quote

HY514400AJ Datasheets (5)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
HY514400AJ		Hynix Semiconductor	1Mx4, Fast Page mode		Original	PDF
HY514400AJ		Hyundai	1M x 4-bit CMOS DRAM		Scan	PDF
HY514400AJ50		Hyundai	1M x 4-Bit CMOS DRAM		Scan	PDF
HY514400AJ60		Hyundai	1M x 4-Bit CMOS DRAM		Scan	PDF
HY514400AJ70		Hyundai	1M x 4-Bit CMOS DRAM		Scan	PDF

HY514400AJ Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
HY514400A Abstract: HY514400AJ HY514400ALJ HY514400ALT HY514400AT Text: HY514400A 1Mx4, Fast Page mode DESCRIPTION This family is a 4M bit dynamic RAM organized 1,048,576 x 4-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode offers high speed of random access memory within the same row. The circuit and process design	Original	PDF	HY514400A /RAS-on28ms 10/Jan HY514400A HY514400AJ HY514400ALJ HY514400ALT HY514400AT
HY5118160JC Abstract: HY531000AJ HY-53 HYM591000B HYM536100AM HYM532120W Text: As of ’96.3Q TYPE SIZE 30 Pin 1MB SIMM DESCRIPTION. PART NO. SPEEp- R EF. D EV ICE U S E D 1M <8 FPM ,L HYM581000BM 50/60/70 IK HY514400AJ x 2 1M <9 FPM ,L HYM591000BM 60/70 IK HY514400AJX2 4M <8 FPM ,L HYM584000AM 50/60/70 IK HY514100AJ x 8 FPM .SL HYM584000DM	OCR Scan	PDF	HYM581000BM HYM591000BM SPEEp50/60/70 HY514400AJ HY514400AJX2 HY531000AJX1 HYM584000AM HYM584000DM HYM594000AM HYM594000DM HY5118160JC HY531000AJ HY-53 HYM591000B HYM536100AM HYM532120W
mr 6710 Abstract: HY514400A HY514400ALJ HY514400ALR HY514400ALT F 421 Text: » « H Y U N D A I H Y 5 1 4 4 0 0 A Vi • 1M X 4-bit S e r ie s CMOS DRAM DESCRIPTION The HY51440QA is the 2nd generation and fast dynamic RAM organized 1,048,576 x 4-bit. The HY514400A utilizes Hyundai’s CMOS silicon gate process technology as weH as advanced circuit techniques to provide wide	OCR Scan	PDF	HY514400A HY51440GA 014Q3 1AC07-30-MAY95 4L750Ã HY514400AJ HY514400ALJ mr 6710 HY514400ALR HY514400ALT F 421
HYM532814 Abstract: HY531000AJ HYM532224 hy5118160bjc HYM532214AE60 HY5118160 HYM536A814BM HYM536100AM HY51178048J HY5118160JC Text: QUICK REFERENCE SIMM MODULE 5V SIMM TYPE SIZE 72 Pin 4MB DESCRIPTION 1M X 32 8 IM M 1Mx36 8M B 2M 2M 16MB 4M 4M 32M B 8M 8M NO TE : 4 X X X X X X 32 36 32 36 32 36 PART NO. SPEED REF. DEVICE USED HEIGHT EDO, S L HYM532124AW/ATW 60/70/80 IK HY5118164BUC/BTC x 2	OCR Scan	PDF	HYM532124AW/ATW 532100AM HYM532120W/TW HYMS32120AW/ATW HY5118164BUC/BTC HY514400AJ HY5118160JC/TC HY5118160BJC/BTC HY531000AJ HYM532814 HYM532224 hy5118160bjc HYM532214AE60 HY5118160 HYM536A814BM HYM536100AM HY51178048J HY5118160JC
Untitled Abstract: No abstract text available Text: -HYUNDAI H Y 5 1 4 4 0 0 A Series 1M X 4-bit CMOS DRAM DESCRIPTION The HY514400A is the 2nd generation and fast dynam ic RAM organized 1,048,576 x 4-bit. The HY514400A utilizes Hyundai’s CM O S silicon gate process technology as well as advanced circuit techniques to provide wide	OCR Scan	PDF	HY514400A HY514400A 047fl 4L750Ã 1AC07-30-MAY95 HY514400AJ HY514400ALJ HY514400AT
512kx4 Abstract: 7150M Text: HY514400A Series •HYUNDAI 1M x 4-bit CMOS DRAM DESCRIPTION ORDERING INFORMATION This fa m ily is a 4M bit d ynam ic RAM organized 1,048,576 x 4-bit configuration with CM O S DRAMs. T he circuit and process design allow th is d e vice to achieve high perform ance and low power dissipation.	OCR Scan	PDF	HY514400A HY514400AJ HY514400ALJ Y514400AT HY514400ALT HY514400AR Y514400ALR 50/60/70only. 128ms 512kx4 7150M
r4kf Abstract: HY53C464LS fr4k HY53C256LS HY531000J Text: «HYUNDAI QUICK REFERENCE DRAM ORGANIZATION PARTNUMBER SPEEDfiw FEATURES PACKAGE 256K bit 256Kx 1) HY53C256S HY53C256LS HY53C256F HY53C256LF HY53C464S HY53C464LS HY53C464F HY53C464LF HY531000S HY531000J HY531000AS HY531000ALS HY531000AJ HY531000AU HY534256S	OCR Scan	PDF	256Kx 64Kx4) HY53C256S HY53C256LS HY53C256F HY53C256LF HY53C464S HY53C464LS HY53C464F HY53C464LF r4kf fr4k HY531000J
AUO-PL321.60 Abstract: HY51V18164B HY514264 HY514260 Text: -HYUNDAI QUICK REFERENCE GUIDE DRAM ORDERING INFORMATION ORGANIZATION 1M bit 1Mx1 PART NUMBER HY531000AS HY531000ALS HY531000AJ HY531000ALJ SPEED(ns) 60/70/80 60/70/80 60/70/80 60/70/80 FEATURES F/P F/P, L-part F/P F/P, L-part PACKAGE 1Spin PDIP 18pin PDIP	OCR Scan	PDF	HY531000AS HY531000ALS HY531000AJ HY531000ALJ HY534256AS HY534256ALS HY534256AJ HY534256ALJ HY512260JC HY512260LJC AUO-PL321.60 HY51V18164B HY514264 HY514260
Untitled Abstract: No abstract text available Text: H Y 5 1 4 4 0 0 A • H Y U N D A I S e r ie s 1Mx 4-bit CMOS DRAM DESCRIPTION The HY514400A is the 2nd generation and fast dynamic RAM organized 1,048,576 x 4-bit. The HY514400A utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating	OCR Scan	PDF	HY514400A 1AC07-30-MAY94 Q24fll HY514400AJ HY514400AU HY514400AT HY514400ALT
Untitled Abstract: No abstract text available Text: •HYUNDAI HY514400A Series SEMICONDUCTOR 1Mx4-blt CMOS DRAM DESCRIPTION The HY514400A is the new generation and fast dynamic RAM organized 1,048,576 x 4-bit. The HY514400A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating	OCR Scan	PDF	HY514400A 1AC07-20-APR93 HY514400AJ HY514400ALJ HY514400AT HY514400ALT
uc07 Abstract: No abstract text available Text: •HYUNDAI H Y 5 1 4 4 0 0 A S e r ie s IM X 4-bit CM O S DRAM DESCRIPTION The HY514400A is the 2nd generation and fast dynamic RAM organized 1,048,576 x 4-bit. The HY514400A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating	OCR Scan	PDF	HY514400A 1AC07-30-MAY94 HY514400AJ HY514400AU HY514400AT HY514400ALT HY514400AR uc07
Untitled Abstract: No abstract text available Text: “ H YU N D A I HY514400A Series SEMICONDUCTOR 1M X 4-bit CMOS DRAM DESCRIPTION The HY514400A is the new generation and fast dynamic RAM organized 1,048,576 x 4-bit. The HY514400A utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating	OCR Scan	PDF	HY514400A 1AC07-20-APR93 00014S7 11nni7/( HY514400AJ HY514400AU
10EZ15 Abstract: 85550 HY514400A HY514400ALJ HY514400ALR HY514400ALT WH33 D03n c 7150M Text: •HYUNDAI H Y 5 1 4 4 0 0 A S e r i e s 1 M x 4-bit CMOS DRAM DESCRIPTION The HY514400A is the 2nd generation and fast dynamic RAM organized 1,048,576 x 4-bit. The HY514400A utilizes Hyundai’s CM O S silicon gate process technology as well as advanced circuit techniques to provide wide	OCR Scan	PDF	HY514400A 1AC07-30-MAY95 4L750Ã DDD4171 HY514400AJ HY514400ALJ 10EZ15 85550 HY514400ALR HY514400ALT WH33 D03n c 7150M
hy5118160b Abstract: No abstract text available Text: 5V DIMM TYPE SIZE 8 -B y te 8M B As o f '96.3Q DESCRIPTION 1M X 64 PART NO. SPEED REF. ED O .SL H Y M 564104A X /TX 6 0 /7 0 /8 0 4K H Y 5 1 1616 4 B J /B T x 4 H Y M 564124A X /TX H Y M 5 6 4 1 00 N /T N IK H Y 5 1 1816 4 B J /B T x 4 F P M ,L 5 0 /6 0 /7 0	OCR Scan	PDF	64104A 64124A HYM5641OOAX/ATX 564120X 572A124ATX 572A100TN 572A120X 64204A 64214A 64224A hy5118160b

d 100 d Abstract: Y514100A HYM532220 Text: QUICK REFERENCE D R A M M O D U L E Q U IC K R E F E R E N C E 3.3V DIMM TYPE S IZ E 8-B yte 8MB D E S C R IP T IO N 1M X 64 P A R T NO. EDO, SL HYM5V64104AX/ATX FPM, SL HYM5V64100AN/ATN SPEED 60/70/80 1K HY51V18164BJ/BT X 4 D, 1.00" 1K HY51V4400BJ/BT D, 1.00"	OCR Scan	PDF	HYM5V64104AX/ATX HYM5V64124AX/ATX HYM5V64100AN/ATN HYM5V64100AX/ATX HYM5V64120AX/ATX HYMSV72103AN/ATN HYM5V72A100ATN HYM5V72A120ATX HY51V16164B HY51V18164BJ/BT d 100 d Y514100A HYM532220
Ck37 Abstract: No abstract text available Text: • « H Y U N D A I H Y 5 1 4 4 0 0 A S e r ie s 1 Mx 4-bit CMOS DRAM DESCRIPTION The HY514400A is the 2nd generation and fast dynam ic RAM organized 1,048,576 x 4-bit. The HY514400A utilizes Hyundai's CM OS silicon gate process technology as well as advanced circuit techniques to provide wide	OCR Scan	PDF	HY514400A families075 1AC07-30-MAY95 HY514400AJ HY514400ALJ HY514400AT 4400ALT Ck37