high sensitivity phototransistor
Abstract: KPCB0001EA S4404-01 SE-171
Text: PHOTOTRANSISTOR Phototransistor S4404-01 High sensitivity phototransistor S4404-01 is a high sensitivity phototransistor molded into a visible-cut plastic package. Features Applications l Miniature plastic package with lens l Visible-cut package l High sensitivity: 2.8 mA 1000 lx
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S4404-01
S4404-01
SE-171
KPTR1002E01
high sensitivity phototransistor
KPCB0001EA
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high sensitivity phototransistor
Abstract: IR Emitters PT126
Text: PT126C EE1 FEATURES • Angle of half sensitivity=±45 • High sensitivity • Fast response time DESCRIPTIONS • The PT126C EE1 is a high speed and high sensitivity phototransistor; molded. • The device is spectrally matched with IR emitters Absolute Maximum Rating Ta=25°C
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PT126C
high sensitivity phototransistor
IR Emitters
PT126
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Untitled
Abstract: No abstract text available
Text: NEW PRODUCT Phototransistor KDT2001 Description - The KDT2001 is a high-sensitivity NPN silicon phototransistor. - Visible ray cut-off mold type : Spectral sensitivity : λ=700~1050nm : Peak sensitivity wavelength : λP=860nm - High reliability, Low power dissipation and Long life span.
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KDT2001
KDT2001
1050nm
860nm
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mouse Phototransistor
Abstract: phototransistor method time transistor 6c DPT-092-120 rise time of phototransistor DPT-092
Text: EVERLIGHT ELECTRONICS CO., LTD. DEVICE NUMBER : ECN : DPT-092-120 REV : PAGE : Phototransistor MODEL NO : PT928-6C/F1 Features : • Wide angle of half sensitivity=50 • High sensitivity • Fast response time Description : The PT928-6C/F1 is a high speed and high sensitivity single phototransistor
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DPT-092-120
PT928-6C/F1
PT928-6C/F1
555mW/c
mouse Phototransistor
phototransistor method time
transistor 6c
DPT-092-120
rise time of phototransistor
DPT-092
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Untitled
Abstract: No abstract text available
Text: Phototransistors PNZ0111 Silicon NPN Phototransistor Unit : mm ø5.08±0.15 4.8 max. For optical control systems Features High sensitivity 16.0±1.0 2.67±0.15 Wide spectral sensitivity Base pin for easy circuit design Wide directional sensitivity : θ = 80 deg. typ.
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PNZ0111
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KPCB0001EA
Abstract: S2829 SE-171
Text: PHOTOTRANSISTOR Phototransistor S2829 Subminiature package phototransistor S2829 is a high sensitivity phototransistor molded into a visible-cut plastic package. Features Applications l Subminiature plastic package with lens l Visible-cut package l High sensitivity: 1.0 mA 1000 lx
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S2829
S2829
SE-171
KPTR1001E02
KPCB0001EA
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VISIBLE LIGHT PHOTOTRANSISTOR
Abstract: phototransistor visible light visible phototransistor high sensitivity phototransistor Phototransistor light detector Optical Receiver optical sensor VISIBLE LIGHT phototransistor datasheet the sensitivity of Optical Sensor
Text: Sensors Phototransistor, side view type RPM-20PB The RPM-20PB is a phototransistor in a side-facing package. High sensitivity with φ1.85 lens. FApplications Optical control equipment Receiver for sensors FExternal dimensions Unit: mm FFeatures 1) High sensitivity.
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RPM-20PB
RPM-20PB
VISIBLE LIGHT PHOTOTRANSISTOR
phototransistor visible light
visible phototransistor
high sensitivity phototransistor
Phototransistor
light detector
Optical Receiver
optical sensor VISIBLE LIGHT
phototransistor datasheet
the sensitivity of Optical Sensor
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phototransistor 600 nm
Abstract: phototransistor visible light high sensitivity phototransistor KPCB0001EA S4404-01 SE-171
Text: Phototransistor S4404-01 High sensitivity phototransistor S4404-01 is a high sensitivity phototransistor molded into a visible-cut plastic package. Features Applications Miniature plastic package with lens Tape start/end mark sensor for VTRs, etc. Visible-cut package
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S4404-01
S4404-01
SE-171
KPTR1002E02
phototransistor 600 nm
phototransistor visible light
high sensitivity phototransistor
KPCB0001EA
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phototransistor 500-600 nm
Abstract: phototransistor 600 nm S2829 KPCB0001EA SE-171
Text: PHOTOTRANSISTOR Phototransistor S2829 Subminiature package phototransistor S2829 is a high sensitivity phototransistor molded into a visible-cut plastic package. Features Applications l Subminiature plastic package with lens l Visible-cut package l High sensitivity: 1.0 mA 1000 lx
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S2829
S2829
SE-171
KPTR1001E02
phototransistor 500-600 nm
phototransistor 600 nm
KPCB0001EA
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Untitled
Abstract: No abstract text available
Text: Phototransistor S4404-01 High sensitivity phototransistor S4404-01 is a high sensitivity phototransistor molded into a visible-cut plastic package. Features Applications Miniature plastic package with lens Tape start/end mark sensor for VTRs, etc. Visible-cut package
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S4404-01
S4404-01
SE-171
KPTR1002E02
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Untitled
Abstract: No abstract text available
Text: Phototransistor S4404-18 High sensitivity phototransistor S4404-18 is a high sensitivity phototransistor molded into a visible-cut plastic package. Features Applications Miniature plastic package with lens Tape start/end mark sensor for VTRs, etc. Visible-cut package
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S4404-18
S4404-18
SE-171
KPTR1005E01
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RPM-20PB
Abstract: No abstract text available
Text: Sensors Phototransistor, side view type RPM-20PB The RPM-20PB is a phototransistor in a side-facing package. High sensitivity with φ1.85 lens. FApplications Optical control equipment Receiver for sensors FExternal dimensions Unit: mm FFeatures 1) High sensitivity.
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RPM-20PB
RPM-20PB
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Untitled
Abstract: No abstract text available
Text: BPW16N www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: leaded • Package form: T-¾ • Dimensions in mm : Ø 1.8 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation
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BPW16N
2002/95/EC
2002/96/EC
BPW16N
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: BPW17N www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: leaded • Package form: T-¾ • Dimensions in mm : Ø 1.8 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation
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BPW17N
2002/95/EC
2002/96/EC
BPW17N
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: BPW17N www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: leaded • Package form: T-¾ • Dimensions in mm : Ø 1.8 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation
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BPW17N
2002/95/EC
2002/96/EC
BPW17N
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: BPW16N www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: leaded • Package form: T-¾ • Dimensions in mm : Ø 1.8 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation
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BPW16N
2002/95/EC
2002/96/EC
BPW16N
2011/65/EU
2002/95/EC.
2011/65/EU.
12-Mar-12
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PN168
Abstract: PNA1801L
Text: Phototransistors PNA1801L PN168 Silicon planar type Unit: mm 5.0±0.2 15.0±1.0 • High sensitivity • Wide spectral sensitivity characteristics, suited for detecting GaAs LEDs • Small size, high output power, low cost • φ3 shell type plastic package
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PNA1801L
PN168)
PN168
PNA1801L
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Untitled
Abstract: No abstract text available
Text: BPW17N www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: leaded • Package form: T-¾ • Dimensions in mm : Ø 1.8 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation
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BPW17N
2002/95/EC
2002/96/EC
BPW17N
2011/65/EU
2002/95/EC.
2011/65/EU.
12-Mar-12
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BPW20RF
Abstract: BPW34 osram phototransistor application lux meter BPW41 BPW34 application note BPW20RF application BPW41N IR DATA wi41g
Text: BPV11 www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation
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BPV11
2002/95/EC
2002/96/EC
BPV11
2002/95/EC.
2011/65/EU.
JS709A
02-Oct-12
BPW20RF
BPW34 osram
phototransistor application lux meter
BPW41
BPW34 application note
BPW20RF application
BPW41N IR DATA
wi41g
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Untitled
Abstract: No abstract text available
Text: BPW76A, BPW76B Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant FEATURES • Package type: leaded • Package form: TO-18 • Dimensions in mm : Ø 4.7 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation
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BPW76A,
BPW76B
2002/95/EC
2002/96/EC
BPW76
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: BPW85A, BPW85B, BPW85C www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: leaded • Package form: T-1 • Dimensions in mm : Ø 3 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation
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BPW85A,
BPW85B,
BPW85C
2002/95/EC
2002/96/EC
BPW85
11-Mar-11
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VBPW77NB
Abstract: BPW77NA BPW77NB npn phototransistor APPLICATION NOTE BpW77 BPW77 phototransistor 600 nm Silicon NPN Phototransistor
Text: BPW77NA, BPW77NB Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant FEATURES • Package type: leaded • Package form: TO-18 • Dimensions in mm : Ø 4.7 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation
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BPW77NA,
BPW77NB
BPW77
2002/95/EC
2002/96/EC
18-Jul-08
VBPW77NB
BPW77NA
BPW77NB
npn phototransistor
APPLICATION NOTE BpW77
phototransistor 600 nm
Silicon NPN Phototransistor
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Untitled
Abstract: No abstract text available
Text: SMALL TYPE PHOTOTRANSISTOR PH110 FEATURES_ DESCRIPTION_ • HIGH SENSITIVITY lc = 400 |iA TYP, H = 50 |xW/cm2 • HIGH SPECTRAL SENSITIVITY Sensitivity active wavelength: 820 nm TYP The PH110 is a small type high sensitivity phototransistor
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PH110
PH110
SE310
b427S2S
00bS3G2
b427525
00bS303
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PH108A
Abstract: No abstract text available
Text: SMALL TYPE SILICON PHOTOTRANSISTOR PH108A FEATURES DESCRIPTION • SMALL PACKAGE 4.0 x 2.8 x 2.5 mm • HIGH SPECTRAL SENSITIVITY Sensitivity active wavelength: 820 nm TYP • HIGH SENSITIVITY II = 0.6 mA TYP @ V c e = 5 V, H = 0.5 mW/cm2 The PH108A is a small type high sensitivity phototransistor
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PH108A
PH108A
SE308
b427525
DDb5300
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