ZLLS400
Abstract: ZHCS400 ZLLS400TA ZLLS400TC Schottky Diode 40V 1A
Text: ZLLS400 40V SILICON HIGH CURRENT LOW LEAKAGE SCHOTTKY DIODE SUMMARY Schottky Diode VR = 40V; IF = 0.52A; IR = 10mA DESCRIPTION This compact SOD323 packaged Schottky diode offers users an excellent performance combination comprising high current operation, extremely low
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ZLLS400
OD323
ZLLS400
ZHCS400
ZLLS400TA
ZLLS400TC
Schottky Diode 40V 1A
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ZLLS400
Abstract: ZLLS400TA ZHCS400 ZLLS400TC
Text: ZLLS400 40V SILICON HIGH CURRENT LOW LEAKAGE SCHOTTKY DIODE SUMMARY Schottky Diode VR = 40V; IF = 0.52A; IR = 10 A DESCRIPTION This compact SOD323 packaged Schottky diode offers users an excellent performance combination comprising high current operation, extremely low
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ZLLS400
OD323
OD323
swit26100
ZLLS400
ZLLS400TA
ZHCS400
ZLLS400TC
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ZLLS400
Abstract: IR610 ZHCS400 ZLLS400TA ZLLS400TC
Text: ZLLS400 40V SILICON HIGH CURRENT LOW LEAKAGE SCHOTTKY DIODE SUMMARY Schottky Diode VR = 40V; IF = 0.52A; IR = 10 A DESCRIPTION This compact SOD323 packaged Schottky diode offers users an excellent performance combination comprising high current operation, extremely low
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ZLLS400
OD323
ZLLS400
IR610
ZHCS400
ZLLS400TA
ZLLS400TC
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ZLLS400
Abstract: ZHCS400 ZLLS400TA ZLLS400TC FSM12
Text: ZLLS400 40V SILICON HIGH CURRENT LOW LEAKAGE SCHOTTKY DIODE SUMMARY Schottky Diode VR = 40V; IF = 0.52A; IR = 10 A DESCRIPTION This compact SOD323 packaged Schottky diode offers users an excellent performance combination comprising high current operation, extremely low
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ZLLS400
OD323
ZLLS400
ZHCS400
ZLLS400TA
ZLLS400TC
FSM12
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Schottky Diode 40V 2A
Abstract: marking ma sot23-6 ZHCS2000 320 sot236 ZLLS1000TA ZLLS1000TC ZLLS2000 marking L10
Text: ZLLS2000 40V SILICON HIGH CURRENT LOW LEAKAGE SCHOTTKY DIODE SUMMARY Schottky Diode VR = 40V; IF = 2.2A; IR = 40 A DESCRIPTION This compact SOT23-6 packaged Schottky diode offers users an excellent performance combination comprising high current operation, extremely low leakage
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ZLLS2000
OT23-6
Schottky Diode 40V 2A
marking ma sot23-6
ZHCS2000
320 sot236
ZLLS1000TA
ZLLS1000TC
ZLLS2000
marking L10
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ZHCS1000
Abstract: ZLLS1000 ZLLS1000TA ZLLS1000TC
Text: ZLLS1000 40V SILICON HIGH CURRENT LOW LEAKAGE SCHOTTKY DIODE SUMMARY Schottky Diode VR = 40V; IF = 1.16A; IR = 20 A DESCRIPTION This compact SOT23 packaged Schottky diode offers users an excellent performance combination comprising high current operation, extremely low leakage and low
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ZLLS1000
ZHCS1000
ZLLS1000
ZLLS1000TA
ZLLS1000TC
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ZHCS2000
Abstract: ZLLS2000 ZLLS2000TA ZLLS2000TC DIODE SCHOTTKY 40V 500MA 2222 diode
Text: ZLLS2000 40V SILICON HIGH CURRENT LOW LEAKAGE SCHOTTKY DIODE SUMMARY Schottky Diode VR = 40V; IF = 2.2A; IR = 40 A DESCRIPTION This compact SOT23-6 packaged Schottky diode offers users an excellent performance combination comprising high current operation, extremely low leakage
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ZLLS2000
OT23-6
ZHCS2000
ZLLS2000
ZLLS2000TA
ZLLS2000TC
DIODE SCHOTTKY 40V 500MA
2222 diode
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L05 diode
Abstract: ZLLS500 MARKING L05 ZHCS500 ZLLS500TA ZLLS500TC
Text: ZLLS500 40V SILICON HIGH CURRENT LOW LEAKAGE SCHOTTKY DIODE SUMMARY Schottky Diode VR = 40V; IF = 0.7A; IR = 10 A DESCRIPTION This compact SOT23 packaged Schottky diode offers users an excellent performance combination comprising high current operation, extremely low leakage and low
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ZLLS500
ZLLS500
L05 diode
MARKING L05
ZHCS500
ZLLS500TA
ZLLS500TC
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L05 diode
Abstract: ZLLS500 ZHCS500 ZLLS500TA ZLLS500TC 8-NP
Text: ZLLS500 40V SILICON HIGH CURRENT LOW LEAKAGE SCHOTTKY DIODE SUMMARY Schottky Diode VR = 40V; IF = 0.7A; IR = 10 A DESCRIPTION This compact SOT23 packaged Schottky diode offers users an excellent performance combination comprising high current operation, extremely low leakage and low
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ZLLS500
ZLLS500
L05 diode
ZHCS500
ZLLS500TA
ZLLS500TC
8-NP
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ZHCS2000
Abstract: ZLLS2000 ZLLS2000TA ZLLS2000TC LL-20 DIODE SCHOTTKY 40V 500MA marking ll20
Text: ZLLS2000 40V SILICON HIGH CURRENT LOW LEAKAGE SCHOTTKY DIODE SUMMARY Schottky Diode VR = 40V; IF = 2.2A; IR = 40 A DESCRIPTION This compact SOT23-6 packaged Schottky diode offers users an excellent performance combination comprising high current operation, extremely low leakage
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ZLLS2000
OT23-6
ZHCS2000
ZLLS2000
ZLLS2000TA
ZLLS2000TC
LL-20
DIODE SCHOTTKY 40V 500MA
marking ll20
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Diode 20A/30v
Abstract: SCHOTTKY 20A 40V Schottky Diode 40V 5A ZHCS1000 ZLLS1000 ZLLS1000TA ZLLS1000TC IR-1120
Text: ZLLS1000 40V SILICON HIGH CURRENT LOW LEAKAGE SCHOTTKY DIODE SUMMARY Schottky Diode VR = 40V; IF = 1.16A; IR = 20 A DESCRIPTION This compact SOT23 packaged Schottky diode offers users an excellent performance combination comprising high current operation, extremely low leakage and low
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ZLLS1000
Diode 20A/30v
SCHOTTKY 20A 40V
Schottky Diode 40V 5A
ZHCS1000
ZLLS1000
ZLLS1000TA
ZLLS1000TC
IR-1120
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ZLLS1000
Abstract: Diode 20A/30v ZHCS1000 ZLLS1000TA ZLLS1000TC
Text: ZLLS1000 40V SILICON HIGH CURRENT LOW LEAKAGE SCHOTTKY DIODE SUMMARY Schottky Diode VR = 40V; IF = 1.16A; IR = 20 A DESCRIPTION This compact SOT23 packaged Schottky diode offers users an excellent performance combination comprising high current operation, extremely low leakage and low
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ZLLS1000
ZLLS1000
Diode 20A/30v
ZHCS1000
ZLLS1000TA
ZLLS1000TC
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TS16949
Abstract: ZHCS2000 ZLLS2000 ZLLS2000TA ZLLS2000TC schottky diode high voltage
Text: ZLLS2000 40V SILICON HIGH CURRENT LOW LEAKAGE SCHOTTKY DIODE SUMMARY Schottky Diode VR = 40V; IF = 2.2A; IR = 40 A DESCRIPTION This compact SOT23-6 packaged Schottky diode offers users an excellent performance combination comprising high current operation, extremely low leakage
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ZLLS2000
OT23-6
Schot6100
TS16949
ZHCS2000
ZLLS2000
ZLLS2000TA
ZLLS2000TC
schottky diode high voltage
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sd1035
Abstract: SD10454 RS-296-E SD1030 SD1030-T3 SD1030-TB SD1040 SD1045 SD1045-T3 SD-1030TB
Text: SD1030 – SD1045 WTE POWER SEMICONDUCTORS Pb 10A SCHOTTKY BARRIER DIODE Features !" Schottky Barrier Chip !" Guard Ring Die Construction for Transient Protection !" High Current Capability !" Low Power Loss, High Efficiency !" High Surge Current Capability
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SD1030
SD1045
DO-201AD
DO-201AD,
MIL-STD-202,
sd1035
SD10454
RS-296-E
SD1030
SD1030-T3
SD1030-TB
SD1040
SD1045
SD1045-T3
SD-1030TB
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sb240 diode
Abstract: diode sb260 diode SB2100 SB2100 RS-296-E SB220 SB230 SB240 SB250 SB260
Text: SB220 – SB2100 WTE POWER SEMICONDUCTORS Pb 2.0A SCHOTTKY BARRIER DIODE Features ! Schottky Barrier Chip ! Guard Ring Die Construction for Transient Protection ! High Current Capability A B ! Low Power Loss, High Efficiency ! High Surge Current Capability
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SB220
SB2100
DO-15
DO-15,
MIL-STD-202,
sb240 diode
diode sb260
diode SB2100
SB2100
RS-296-E
SB220
SB230
SB240
SB250
SB260
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SB1100 schottky diode
Abstract: RS-296-E SB1100 SB130 SB140 SB150 SB160 SB180 DO41
Text: SB120 – SB1100 WTE POWER SEMICONDUCTORS Pb 1.0A SCHOTTKY BARRIER DIODE Features ! Schottky Barrier Chip ! Guard Ring Die Construction for Transient Protection ! High Current Capability A B ! Low Power Loss, High Efficiency ! High Surge Current Capability
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SB120
SB1100
DO-41
DO-41,
MIL-STD-202,
SB1100 schottky diode
RS-296-E
SB1100
SB130
SB140
SB150
SB160
SB180
DO41
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SB360 diode
Abstract: SB320-SB3100 RS-296-E SB3100 SB320 SB330 SB340 SB350 SB360 SB380
Text: SB320 – SB3100 WTE POWER SEMICONDUCTORS Pb 3.0A SCHOTTKY BARRIER DIODE Features ! Schottky Barrier Chip ! Guard Ring Die Construction for Transient Protection ! High Current Capability A B ! Low Power Loss, High Efficiency ! High Surge Current Capability
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SB320
SB3100
DO-201AD
DO-201AD,
MIL-STD-202,
SB360 diode
SB320-SB3100
RS-296-E
SB3100
SB320
SB330
SB340
SB350
SB360
SB380
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1N5819
Abstract: 1N5817-1N5819 datasheets diode 1n5818 DIODE 1n5819 1N5817 1N5817-T3 1N5817-TB 1N5818 1N5818-T3 1N5818-TB
Text: 1N5817 – 1N5819 WTE POWER SEMICONDUCTORS Pb 1.0A SCHOTTKY BARRIER DIODE Features ! Schottky Barrier Chip ! Guard Ring Die Construction for Transient Protection ! High Current Capability A B ! Low Power Loss, High Efficiency ! High Surge Current Capability
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1N5817
1N5819
DO-41
DO-41,
MIL-STD-202,
1N5819
1N5817-1N5819
datasheets diode 1n5818
DIODE 1n5819
1N5817
1N5817-T3
1N5817-TB
1N5818
1N5818-T3
1N5818-TB
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diode SR160
Abstract: Diode SR1100 Diode SR140 RS-296-E SR1100 SR120 SR130 SR140 SR150 SR160
Text: SR120 – SR1100 WTE POWER SEMICONDUCTORS Pb 1.0A SCHOTTKY BARRIER DIODE Features ! Schottky Barrier Chip ! Guard Ring Die Construction for Transient Protection ! High Current Capability A B ! Low Power Loss, High Efficiency ! High Surge Current Capability
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SR120
SR1100
DO-41
DO-41,
MIL-STD-202,
diode SR160
Diode SR1100
Diode SR140
RS-296-E
SR1100
SR120
SR130
SR140
SR150
SR160
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SR5100 diode
Abstract: SR560 diode SR5100 SR560 SR530 Diode SR5100 SR540 RS-296-E SR520 SR550
Text: SR520 – SR5100 WTE POWER SEMICONDUCTORS Pb 5.0A SCHOTTKY BARRIER DIODE Features ! Schottky Barrier Chip ! Guard Ring Die Construction for Transient Protection ! High Current Capability A B ! Low Power Loss, High Efficiency ! High Surge Current Capability
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SR520
SR5100
DO-201AD
DO-201AD,
MIL-STD-202,
SR5100 diode
SR560 diode
SR5100
SR560
SR530
Diode SR5100
SR540
RS-296-E
SR520
SR550
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diode sb5100
Abstract: SB520-SB5100 Diode SB530 RS-296-E SB5100 SB520 SB530 SB540 SB550 SB560
Text: SB520 – SB5100 WTE POWER SEMICONDUCTORS Pb 5.0A SCHOTTKY BARRIER DIODE Features ! Schottky Barrier Chip ! Guard Ring Die Construction for Transient Protection ! High Current Capability A B ! Low Power Loss, High Efficiency ! High Surge Current Capability
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SB520
SB5100
DO-201AD
DO-201AD,
MIL-STD-202,
diode sb5100
SB520-SB5100
Diode SB530
RS-296-E
SB5100
SB520
SB530
SB540
SB550
SB560
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SR260 Diode
Abstract: Diode SR240 SR260 Diode construction sr240 diode equivalent components of diode sr2100 RS-296-E SR2100 SR220 SR230 SR240
Text: SR220 – SR2100 WTE POWER SEMICONDUCTORS Pb 2.0A SCHOTTKY BARRIER DIODE Features ! Schottky Barrier Chip ! Guard Ring Die Construction for Transient Protection ! High Current Capability A B ! Low Power Loss, High Efficiency ! High Surge Current Capability
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SR220
SR2100
DO-15
DO-15,
MIL-STD-202,
SR260 Diode
Diode SR240
SR260 Diode construction
sr240 diode
equivalent components of diode sr2100
RS-296-E
SR2100
SR220
SR230
SR240
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Diode SR3100
Abstract: SR360 diode SR380 diode SR3100 SR3100 diode RS-296-E SR320 SR330 SR340 SR350
Text: SR320 – SR3100 WTE POWER SEMICONDUCTORS Pb 3.0A SCHOTTKY BARRIER DIODE Features ! Schottky Barrier Chip ! Guard Ring Die Construction for Transient Protection ! High Current Capability A B ! Low Power Loss, High Efficiency ! High Surge Current Capability
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SR320
SR3100
DO-201AD
DO-201AD,
MIL-STD-202,
Diode SR3100
SR360 diode
SR380 diode
SR3100
SR3100 diode
RS-296-E
SR320
SR330
SR340
SR350
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DIODE 1N5822
Abstract: 1N5821-T3 1N5820 1N5820-T3 1N5820-TB 1N5821 1N5821-TB 1N5822 RS-296-E
Text: 1N5820 – 1N5822 WTE POWER SEMICONDUCTORS Pb 3.0A SCHOTTKY BARRIER DIODE Features ! Schottky Barrier Chip ! Guard Ring Die Construction for Transient Protection ! High Current Capability A B ! Low Power Loss, High Efficiency ! High Surge Current Capability
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1N5820
1N5822
DO-201AD
DO-201AD,
MIL-STD-202,
DIODE 1N5822
1N5821-T3
1N5820
1N5820-T3
1N5820-TB
1N5821
1N5821-TB
1N5822
RS-296-E
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