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    mosfet VDS 650V ID 6A TO 252

    Abstract: RG 702 Diode 66 6602 HFD2N65S hfu2n65s
    Text: BVDSS = 650 V RDS on typ = 5.0 Ω HFD2N65S / HFU2N65S ID = 1.6 A 650V N-Channel MOSFET D-PAK I-PAK 2 FEATURES 1 1 2 3  Originative New Design 3 HFD2N65S  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology HFU2N65S 1.Gate 2. Drain 3. Source


    Original     		PDF HFD2N65S HFU2N65S HFD2N65S O-252 O-251 mosfet VDS 650V ID 6A TO 252 RG 702 Diode 66 6602 hfu2n65s

    RG 702 Diode

    Abstract: DIODE 60 A hfu2n65
    Text: BVDSS = 650 V RDS on typ = 4.5 Ω HFU2N65 ID = 1.6 A 650V N-Channel MOSFET I-PAK FEATURES  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source  Very Low Intrinsic Capacitances  Excellent Switching Characteristics


    Original     		PDF HFU2N65 O-251 RG 702 Diode DIODE 60 A hfu2n65