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    HFE IS TRANSISTOR TO220 Search Results

    HFE IS TRANSISTOR TO220 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    HFE IS TRANSISTOR TO220 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SA1742

    Abstract: No abstract text available
    Text: DATA SHEET SILICON POWER TRANSISTOR 2SA1742 PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1742 is a power transistor developed for high-speed ORDERING INFORMATION switching and features a high hFE at low VCE sat . This transistor is ideal


    Original     		PDF 2SA1742 2SA1742 O-220 O-220)

    transistor j13009-2

    Abstract: J13009-2 j13009 2 FJP13009
    Text: FJP13009 High-Voltage Fast-Switching NPN Power Transistor Features Description • High-Voltage Capability • High Switching Speed The FJP13009 is a 700 V, 12 A NPN silicon epitaxial planar transistor. The FJP13009 is available with multiple hFE bin classes for ease of design use. The FJP13009 is


    Original     		PDF FJP13009 FJP13009 O-220 O-220 FJP13009TU transistor j13009-2 J13009-2 j13009 2

    Untitled

    Abstract: No abstract text available
    Text: UTC 2SD880 NPN EPITAXIAL PLANAR TRANSISTOR NPN EPITAXIAL TRANSISTOR DESCRIPTION The UTC 2SD880 is designed for audio frequency power amplifier applications. FEATURE *High DC Current Gain: hFE=300 Max. (VCE=5V,IC=0.5A) *Low Saturation Voltage: VCE(sat)=1.0V(Max.)(IC=3A,IB=0.3A)


    Original     		PDF 2SD880 2SD880 2SB834 O-220 QW-R203-013

    Untitled

    Abstract: No abstract text available
    Text: UTC 2SD880 NPN EPITAXIAL PLANAR TRANSISTOR NPN EPITAXIAL TRANSISTOR DESCRIPTION The UTC 2SD880 is designed for audio frequency power amplifier applications. FEATURE *High DC Current Gain: hFE=300 Max. (VCE=5V,IC=0.5A) *Low Saturation Voltage: VCE(sat)=1.0V(Max.)(IC=3A,IB=0.3A)


    Original     		PDF 2SD880 2SD880 2SB834 O-220 QW-R203-013

    Untitled

    Abstract: No abstract text available
    Text: UTC 2SD880 NPN EPITAXIAL PLANAR TRANSISTOR NPN EPITAXIAL TRANSISTOR DESCRIPTION The UTC 2SD880 is designed for audio frequency power amplifier applications. FEATURE *High DC Current Gain: hFE=300 Max. (VCE=5V,IC=0.5A) *Low Saturation Voltage: VCE(sat)=1.0V(Max.)(IC=3A,IB=0.3A)


    Original     		PDF 2SD880 2SD880 2SB834 O-220 300mA 500mA 500mA,

    2SD880L

    Abstract: 2sd880 equivalent utc 2SD880L QW-R203-013 2SB834 2SD880 power transistor audio amplifier 500 watts
    Text: UTC 2SD880 NPN EPITAXIAL PLANAR TRANSISTOR NPN EPITAXIAL TRANSISTOR DESCRIPTION The UTC 2SD880 is designed for audio frequency power amplifier applications. FEATURE *High DC Current Gain: hFE=300 Max. (VCE=5V,IC=0.5A) *Low Saturation Voltage: VCE(sat)=1.0V(Max.)(IC=3A,IB=0.3A)


    Original     		PDF 2SD880 2SD880 2SB834 O-220 2SD880L QW-R203-013 2SD880L 2sd880 equivalent utc 2SD880L 2SB834 power transistor audio amplifier 500 watts

    UTC2SD880

    Abstract: 2sd880 equivalent 2SB834 2SD880 QW-R203-013
    Text: UTC 2SD880 NPN EPITAXIAL PLANAR TRANSISTOR NPN EPITAXIAL TRANSISTOR DESCRIPTION The UTC 2SD880 is designed for audio frequency power amplifier applications. FEATURE *High DC Current Gain: hFE=300 Max. (VCE=5V,IC=0.5A) *Low Saturation Voltage: VCE(sat)=1.0V(Max.)(IC=3A,IB=0.3A)


    Original     		PDF 2SD880 2SD880 2SB834 O-220 300mA 500mA 500mA, QW-R203-013 UTC2SD880 2sd880 equivalent 2SB834

    2SD880L

    Abstract: 2SD880 2sd880 equivalent 2sd880 datasheet 013 transistor 2SB834 QW-R203-013 transistor 2sd880 hfe-300 utc 2SD880L
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SD880 NPN SILICON TRANSISTOR NPN EPITAXIAL TRANSISTOR „ DESCRIPTION The UTC 2SD880 is designed for audio frequency power amplifier applications. „ FEATURES * High DC Current Gain: hFE=300 Max. (VCE=5V, IC=0.5A) * Low Saturation Voltage: VCE(SAT)=1.0V(Max.)(IC=3A, IB=0.3A)


    Original     		PDF 2SD880 2SD880 2SB834 2SD880L-TA3-T 2SD880G-TA3-T O-220 QW-R203-013 2SD880L 2sd880 equivalent 2sd880 datasheet 013 transistor 2SB834 transistor 2sd880 hfe-300 utc 2SD880L

    2SD880

    Abstract: 2sD880 TRANSISTOR 2SD880L
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SD880 NPN SILICON TRANSISTOR NPN EPITAXIAL TRANSISTOR  DESCRIPTION The UTC 2SD880 is designed for audio frequency power amplifier applications.  FEATURES * High DC Current Gain: hFE=200 Max. (VCE=5V, IC=0.5A) * Low Saturation Voltage: VCE(SAT)=1.0V(Max.)(IC=3A, IB=0.3A)


    Original     		PDF 2SD880 2SD880 2SB834 2SD880G-AB3-R 2SD880L-TA3-T 2SD880G-TA3-T OT-89 O-220 2sD880 TRANSISTOR 2SD880L

    2SD880L

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SD880 NPN SILICON TRANSISTOR NPN EPITAXIAL TRANSISTOR „ DESCRIPTION The UTC 2SD880 is designed for audio frequency power amplifier applications. „ FEATURES * High DC Current Gain: hFE=200 Max. (VCE=5V, IC=0.5A) * Low Saturation Voltage: VCE(SAT)=1.0V(Max.)(IC=3A, IB=0.3A)


    Original     		PDF 2SD880 2SD880 2SB834 2SD880L-TA3-T 2SD880G-TA3-T O-220 QW-R203-013 2SD880L

    2sd880

    Abstract: 2SD880L utc 2SD880L 2SD880, 1.5 power dissipation transistor 2sd880 013 transistor
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SD880 NPN SILICON TRANSISTOR NPN EPITAXIAL TRANSISTOR „ DESCRIPTION The UTC 2SD880 is designed for audio frequency power amplifier applications. „ FEATURES * High DC Current Gain: hFE=200 Max. (VCE=5V, IC=0.5A) * Low Saturation Voltage: VCE(SAT)=1.0V(Max.)(IC=3A, IB=0.3A)


    Original     		PDF 2SD880 2SD880 2SB834 2SD880L-TA3-T 2SD880G-TA3-T O-220 QW-R203-013 2SD880L utc 2SD880L 2SD880, 1.5 power dissipation transistor 2sd880 013 transistor

    Untitled

    Abstract: No abstract text available
    Text: 2ST31A Low voltage NPN power transistor Features • High switching speed ■ Good performances in terms of hFE linearity TAB Application ■ Linear and switching industrial applications 3 Description 1 TO-220 The device is manufactured in planar technology


    Original     		PDF 2ST31A O-220 2ST31A O-220

    2SB1568

    Abstract: 2SD2399
    Text: 2SB1568 Transistors Power Transistor −80V, −4A 2SB1568 zExternal dimensions (Unit : mm) z Features 1) Available in TO-220 FN package 2) Darling connection provides high dc current gain (hFE) 3) Damper diode is incorporated 4) Built in resistors between base and


    Original     		PDF 2SB1568 O-220 2SD2399 O-220FN 2SB1568 2SD2399

    2ST31A

    Abstract: st 393
    Text: 2ST31A Low voltage NPN power transistor Preliminary data Features • High switching speed ■ Good performances in terms of hFE linearity TAB Application ■ Linear and switching industrial applications 3 Description 1 TO-220 The device is manufactured in planar technology


    Original     		PDF 2ST31A O-220 2ST31A st 393

    2SD2422

    Abstract: 2SD242 2sd transistors equivalent
    Text: 2SD2422 Transistor, NPN, Darlington Features Dimensions Units : mm • available in TO-220FP (SC-67) package • Darlington connection provides high dc current gain (hFE) • damper diode is incorporated • built-in resistors between base and emitter •


    OCR Scan     		PDF 2SD2422 O-220FP SC-67) O-220FP) 2SD2422 2SD242 2sd transistors equivalent

    2SA940

    Abstract: 2SC2073 2SA94 PEC 120V
    Text: ÆàMOS PEC PNP SILICON POWER TRANSISTORS PNP 2SA940 2SA940 transistor is designed for use in general purpose power amplifier,vertical output application FEATURES: * Collector-Emitter Voltage VCEO= 150V Min * DC Current Gain hFE= 40-140@lc= 500mA * Complementary NPN 2SC2073


    OCR Scan     		PDF 2SA940 500mA 2SC2073 2SC2073 2SA94 PEC 120V

    lc 3101

    Abstract: k 351 transistor 2sd darlington L001 transistor Mu
    Text: 2SD1889 Transistor, NPN, Darlington Features Dimensions Units : mm • available in TO-220FP (SC-67) package • Darlington connection provides high dc current gain (hFE) 2SD1889 (TO-220FP) 10.0 • damper diode is incorporated • built-in resistors between base and


    OCR Scan     		PDF 2SD1889 O-220FP SC-67) 2SB1340 O-220FP) 300fl 800/iA 2SD1889 lc 3101 k 351 transistor 2sd darlington L001 transistor Mu

    2SD2399

    Abstract: 2SD 438
    Text: 2SD2399 Transistor, NPN, Darlington Features Dimensions Units : mm • available in TO-220FN package • Darlington connection provides high dc current gain (hFE) • • • • 2SD2399 (TO-220FN) damper diode is incorporated built-in resistors between base and


    OCR Scan     		PDF 2SD2399 O-220FN O-220FP 2SB1568 O-220FN) 10000E 2SD2399 2SD 438

    Untitled

    Abstract: No abstract text available
    Text: 2SD1889 Transistor, NPN, Darlington Features Dimensions Units : mm • available in TO-220FP (SC-67) package • Darlington connection provides high dc current gain (hFE) 2SD1889 (TO-220FP) • damper diode is incorporated • built-in resistors between base and


    OCR Scan     		PDF 2SD1889 O-220FP SC-67) 2SB1340 O-220FP)

    2SC2073

    Abstract: transistor 2sc2073 2sc2073 amplifier 2SA940 FI150
    Text: ÆàMOSPEC NPN SILICON POWER TRANSISTORS NPN 2SC2073 2SC2073 transistor is designed for use in general purpose Power amplifier,vertical output application FEATURES: * Collector-Emitter Voltage VCEO= 150V Min * DC Current Gain hFE= 40-140@lc= 500mA * Complementary PNP 2SA940


    OCR Scan     		PDF 2SC2073 500mA 2SA940 fi150pC Vce-10V transistor 2sc2073 2sc2073 amplifier 2SA940 FI150

    SJE1497

    Abstract: Transistor SJE1497
    Text: ¿2&M0SPEC PNP PNP SILICON POWER TRANSISTORS SJE1497 SJE1497 transistor is designed for use in general purpose Power amplifier,verticai output application FEATURES: * Collector-Emitter Voltage v c e o = 150V Min * DC Current Gain hFE= 30(Min)@lc= 300mA 1.5 AMPERE


    OCR Scan     		PDF SJE1497 300mA 150oC 15CfC Transistor SJE1497

    Untitled

    Abstract: No abstract text available
    Text: 2SB1568 Transistor, PNP, Features Dimensions Units : mm • available in T 0 -2 2 0 FN package • Darlington connection provides high dc current gain (hFE) 2SB1568 (TO-220 FN) • damper diode is incorporated • built in resistors between base and emitter


    OCR Scan     		PDF 2SB1568 O-220 2SB1S68 2SB1568,

    2SB1340

    Abstract: No abstract text available
    Text: 2SB1340 Transistor, PNP Features • available in T0-220 FP SC-67 package • Darlington connection provides high dc current gain (hFE) Dimensions (Units : mm) • • 2SB1340 (TO-220 FP) damper diode is incorporated built in resistors between base and emitter


    OCR Scan     		PDF 2SB1340 T0-220 SC-67) O-220 2SD1889 2SB1340

    Untitled

    Abstract: No abstract text available
    Text: 2SB1568 Transistor, PNP, Features Dimensions Units : mm • available in 7 0 -2 2 0 FN package • Darlington connection provides high dc current gain (hFE) • damper diode is incorporated • 2SB1568 (TO-220 FN) 10.0 J " built in resistors between base and


    OCR Scan     		PDF 2SB1568 O-220 2SD2399