HF Amplifier 300w
Abstract: hf amplifier 100w mosfet HF amplifier hf class AB power amplifier mosfet 300-0130M MRF151G mrf151g date MRF151G hf amplifier mrf151g 300 GR00166
Text: HF 300-0130M 300 W HF Amplifier Designed for HF band, this amplifier incorporates microstrip technology and MOSFET transistor to enhance ruggedness and reliability. • • • • • • 1 ÷ 30 MHz 50 Volts Input / Output 50 Ohm Pout : 300 W min Gain : 22 dB typ.
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300-0130M
MRF151G
10ANY
GR00166
HF Amplifier 300w
hf amplifier 100w
mosfet HF amplifier
hf class AB power amplifier mosfet
300-0130M
mrf151g date
MRF151G hf amplifier
mrf151g 300
GR00166
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TIS43 Unijunction Transistor
Abstract: acrian RF POWER TRANSISTOR motorola s200 hFE-200 to-92 npn 12v 50w class t amplifier acrian 2SC4127 TIS43 2sc3374 unijunction transistor TIS43
Text: ADDITIONAL TRANSISTORS Item Number RF 5 10 Part Number r Amplifi rs, fT POW S01080-2 S01115-2 S01127 S01143-1 S01219-5 S01222-6 S01229-1 S01278 S01405 S01416 20 S01438-2 S01446 S01477 S01487 S200-50 S25-50 S80-12 VAM120 VAM40 Polarity > 300 ThmsnCSFEFC ThmsnCSFEFC
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S01080-2
S01115-2
S01127
S01143-1
S01219-5
S01222-6
S01229-1
S01278
S01405
S01416
TIS43 Unijunction Transistor
acrian RF POWER TRANSISTOR
motorola s200
hFE-200 to-92 npn
12v 50w class t amplifier
acrian
2SC4127
TIS43
2sc3374
unijunction transistor TIS43
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Untitled
Abstract: No abstract text available
Text: Product Review RPFow& erWR S m 15 8 o-.fr2 et5 rM H V/-hH FU z/FH2F00W MFJ offer the best RF Power & SWR meter for 1.8-525Mhz - HF / VHF / UHF 200W. This awesome product currently in stocks, you can get this Electronics now for only $133.44. New More Information»
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8-525Mhz
525Mhz
SO-239
12Vdc
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dtmf principle
Abstract: murata pkm34ew TEA1093 balanced microphone schematic Piezo Ceramic Microphones MRC D17 TEA1112 5 volt piezo microphone switches Piezo Contact Microphone AN95050
Text: APPLICATION NOTE Application of the TEA1112 and TEA1112A transmission circuits AN95050 Philips Semiconductors Application of the TEA1112 and TEA1112A transmission circuits Application Note AN95050 Abstract The TEA1112 and TEA1112A are bipolar transmission circuits for use in electronic telephone sets. They are
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TEA1112
TEA1112A
AN95050
TEA1112
TEA1112A
TEA1060-family.
dtmf principle
murata pkm34ew
TEA1093
balanced microphone schematic
Piezo Ceramic Microphones
MRC D17
5 volt piezo microphone switches
Piezo Contact Microphone
AN95050
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D1212UK
Abstract: hf amplifier 100w
Text: TetraFET D1212UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 100W – 12.5V – 500MHz PUSH–PULL B 4 pls C G (typ) 2 3 1 A E D 5 4 I F FEATURES • SIMPLIFIED AMPLIFIER DESIGN N H M J K • SUITABLE FOR BROAD BAND APPLICATIONS
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D1212UK
500MHz
D1212UK
hf amplifier 100w
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hf amplifier 100w
Abstract: D1012UK
Text: TetraFET D1012UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 100W – 28V – 500MHz PUSH–PULL B 4 pls C G (typ) 2 3 1 A E D 5 4 I F FEATURES • SIMPLIFIED AMPLIFIER DESIGN N H M J K • SUITABLE FOR BROAD BAND APPLICATIONS
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D1012UK
500MHz
hf amplifier 100w
D1012UK
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hf amplifier 100w
Abstract: D1022UK
Text: TetraFET D1022UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 100W – 28V – 500MHz PUSH–PULL A C B 2 pls K 3 2 1 E D 5 4 G (4 pls) F FEATURES • SIMPLIFIED AMPLIFIER DESIGN H J M I N • SUITABLE FOR BROAD BAND APPLICATIONS
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D1022UK
500MHz
hf amplifier 100w
D1022UK
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hf amplifier 100w
Abstract: D1018UK 24S10
Text: TetraFET D1018UK METAL GATE RF SILICON FET MECHANICAL DATA B A E 2 pls C 1 K 2 3 4 G F 8 7 6 5 J Typ. GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 100W – 28V – 500MHz PUSH–PULL D M Q FEATURES • SIMPLIFIED AMPLIFIER DESIGN P O N I H • SUITABLE FOR BROAD BAND APPLICATIONS
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D1018UK
500MHz
hf amplifier 100w
D1018UK
24S10
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hf amplifier 100w
Abstract: d1036uk
Text: TetraFET D1036UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA A B C 2 1 D 4 E 3 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 100W – 28V – 175MHz SINGLE ENDED M F FEATURES G • SIMPLIFIED AMPLIFIER DESIGN H J I K DM • SUITABLE FOR BROAD BAND APPLICATIONS
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D1036UK
175MHz
hf amplifier 100w
d1036uk
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Untitled
Abstract: No abstract text available
Text: TetraFET D1036UK METAL GATE RF SILICON FET MECHANICAL DATA A B C 2 1 D 4 E 3 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 100W – 28V – 175MHz SINGLE ENDED M F FEATURES G • SIMPLIFIED AMPLIFIER DESIGN H J I K DM • SUITABLE FOR BROAD BAND APPLICATIONS
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D1036UK
175MHz
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D1025UK
Abstract: No abstract text available
Text: TetraFET D1025UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 100W – 28V – 175MHz SINGLE ENDED C D 2 pls E 1 B 2 3 A G 5 4 H I FEATURES • SIMPLIFIED AMPLIFIER DESIGN F M J K N • SUITABLE FOR BROAD BAND APPLICATIONS
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D1025UK
175MHz
D1025UK
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Untitled
Abstract: No abstract text available
Text: TetraFET D1036UK METAL GATE RF SILICON FET MECHANICAL DATA A B C 2 1 D 4 E 3 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 100W – 28V – 175MHz SINGLE ENDED M F FEATURES G • SIMPLIFIED AMPLIFIER DESIGN H J I K DM • SUITABLE FOR BROAD BAND APPLICATIONS
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D1036UK
175MHz
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Untitled
Abstract: No abstract text available
Text: TetraFET D1025UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 100W – 28V – 175MHz SINGLE ENDED C D 2 pls E 1 B 2 3 A G 5 4 H I FEATURES • SIMPLIFIED AMPLIFIER DESIGN F M J K N • SUITABLE FOR BROAD BAND APPLICATIONS
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D1025UK
175MHz
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064R
Abstract: D2084UK power amplifier s band 3 ghz 100w
Text: D2084UK.01 MECHANICAL DATA B C 2 pls 2 G (typ) 3 1 H P (2 pls) A D 4 5 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 100W – 28V – 1GHz PUSH–PULL E (4 pls) F FEATURES I • SIMPLIFIED AMPLIFIER DESIGN N O M J K • SUITABLE FOR BROAD BAND APPLICATIONS
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D2084UK
064R
power amplifier s band 3 ghz 100w
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hf amplifier 100w
Abstract: rf amplifier 100w D1025UK
Text: TetraFET D1025UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 100W – 28V – 175MHz SINGLE ENDED C D 2 pls E 1 B 2 3 A G 5 4 H I FEATURES • SIMPLIFIED AMPLIFIER DESIGN F M J K N • SUITABLE FOR BROAD BAND APPLICATIONS
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D1025UK
175MHz
hf amplifier 100w
rf amplifier 100w
D1025UK
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Untitled
Abstract: No abstract text available
Text: TetraFET D1036UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA A B C 2 1 D 4 E 3 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 100W – 28V – 175MHz SINGLE ENDED M F FEATURES G • SIMPLIFIED AMPLIFIER DESIGN H J I K DM • SUITABLE FOR BROAD BAND APPLICATIONS
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D1036UK
175MHz
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rca 40410
Abstract: rca 40362 transistor 40410 RCA transistor 40410 RCA transistor 40406 40410 RCA 40319 40362 RCA 2N5295 2N5296 RCA
Text: HIGH-VOLTAGE N-P-N & P-N-P POWER T Y PE S 1C to 30 A . . •c pm k - 12 A lc = 10A Py =7 5 •100W Switching Linear 130 x 130 130 x 130 1 3 0 x 130 BU106 2N5840 [N-P-N] 2N 52 40 [N-P-N] BU106 2N5838 Va o sus =l40V VCER(sus) =275 V hFE = 20min. hFE.:8 ;" 0) /
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lc-30A
130x130
180x180
210x210
bu106
2n5840
2n5240
2N6510
2N6308
2n5805
rca 40410
rca 40362
transistor 40410
RCA transistor 40410
RCA transistor 40406
40410
RCA 40319
40362 RCA
2N5295
2N5296 RCA
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Untitled
Abstract: No abstract text available
Text: 2SA1943 SILICON PNP TRIPLE DIFFUSED TYPE U nit in mm POWER AM PLIFIER APPLICATIONS. 2 0 .5 M A X • • 3.3 ±0 .2 Complementary to 2SC5200 Recommended for 100W High Fidelity Audio Frequency Amplifier Output Stage. M A X IM U M RATINGS Ta = 25°C CHARACTERISTIC
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2SA1943
2SC5200
--50mA,
--800mA
2-21F1A
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RCA 40313
Abstract: RCA413 40328 RCA411 2N5415 40318 RCA 2N3439 2N3440 2N5840 2N6079
Text: HIGH-VOLTAGE N-P-N & P-N-P POWER TYPES 1C to 30 A . . f r to 20 M Hz . . . Py to 175 W Ic * 1 A max. Py “ 20 W max. Plástic TO-5Í 32 x lt > 1 A max. Pt - 10 W max. 32a jTO-39»* lc > - 1 A max. Py - 10 W max. (T O -39 * 42x42 42x42 2N3439 [N-P-N] 2N5415
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TQ-66Ã
42x42
130x130
2N6177
2N3439
2N5415
2N358S
2N6213
2N6079
RCA 40313
RCA413
40328
RCA411
2N5415
40318 RCA
2N3439
2N3440
2N5840
2N6079
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D1212UK
Abstract: No abstract text available
Text: TetraFET Illl iFFs Illl SEME D1212UK LAB METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 100W -12.5V -500M H z PUSH-PULL B 4 pis FEATURES J i • SIMPLIFIED AMPLIFIER DESIGN A A H • SUITABLE FOR BROAD BAND APPLICATIONS
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D1212UK
-500M
D1212UK
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Untitled
Abstract: No abstract text available
Text: mi TetraFET § ^ § INI D1012UK SEME LAB METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 100W -28V -500M H z PUSH-PULL B 4 p is c G (ty p ) A 2 _ ▲ A 1 n . D 3 n - . ! • * " • ▼ . _ j
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D1012UK
-500M
20tput
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Untitled
Abstract: No abstract text available
Text: TetraFET Illl ÉFFÉ Illl D1018UK SEM E LAB METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 100W -28V -500M H z PUSH-PULL _ B 2 pis . A- 12 3 4 A i. i * 6 7 6 5 j Typ. FEATURES u • SIMPLIFIED AMPLIFIER DESIGN
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D1018UK
-500M
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Untitled
Abstract: No abstract text available
Text: UH TetraFET SEME D1022UK LAB METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 100W - 28V -500MHz PUSH-PULL A g Ç F pî ir j ► FEATURES • SIMPLIFIED AMPLIFIER DESIGN H J * ' I * M N • SUITABLE FOR BROAD BAND APPLICATIONS
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-500MHz
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Untitled
Abstract: No abstract text available
Text: bOE SEMELAB D • Ö1331Ö7 DODOTMD Ob4 ■ S Ï Ï L B PLC SEMELAB D1018UK NEW PRODUCT RF SILICON FET GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 100W -28 V -500M H z PUSH-PULL MECHANICAL DATA Dimemsions FEATURES • SIMPLIFIED AMPLIFIER DESIGN PINI
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D1018UK
-500M
300/us,
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