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    HEMT LOW NOISE DIE Search Results

    HEMT LOW NOISE DIE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCR5RG28A Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 2.8 V, 500 mA, WCSP4F Visit Toshiba Electronic Devices & Storage Corporation
    TCR3DM18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 300 mA, DFN4 Visit Toshiba Electronic Devices & Storage Corporation
    TCR3DG18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 300 mA, WCSP4E Visit Toshiba Electronic Devices & Storage Corporation
    TCR2EF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR3RM28A Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 2.8 V, 300 mA, DFN4C Visit Toshiba Electronic Devices & Storage Corporation

    HEMT LOW NOISE DIE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Micro-X marking "K"

    Abstract: low noise Micro-X marking "K" Micro-X Marking E RO4350B rogers HEMT marking G HEMT marking K GD-32 hemt low noise die Micro-X Marking v transistor "micro-x" "marking" 3
    Text: PRELIMINARY < Low Noise GaAs HEMT > MGF4941CL Micro-X type plastic package DESCRIPTION The MGF4941CL super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in K band amplifiers. Outline Drawing FEATURES Low noise figure @ f=25.2GHz


    Original     		PDF MGF4941CL MGF4941CL 4000pcs Micro-X marking "K" low noise Micro-X marking "K" Micro-X Marking E RO4350B rogers HEMT marking G HEMT marking K GD-32 hemt low noise die Micro-X Marking v transistor "micro-x" "marking" 3

    Untitled

    Abstract: No abstract text available
    Text: MECKULNA1 Ku-Band GaN HEMT Low Noise Amplifier VG1 VD1 VG2 VD2 Main Features VG3 VD3 RFin RFout Product Description MECKULNA1 is a 0.25µm GaN HEMT based Low Noise Amplifier designed by MEC for Ku-Band applications. 0.25µm GaN HEMT Technology 12– 16 GHz full performance Frequency


    Original     		PDF

    RO4350B ROGERS

    Abstract: transistor "micro-x" "marking" 3 RO4350B max current MGF4941CL GD-32 low noise Micro-X marking "K" RO4350B
    Text: < Low Noise GaAs HEMT > MGF4941CL Micro-X type plastic package DESCRIPTION The MGF4941CL super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in K band amplifiers. The MGF4941CL is designed for automotive application and AEC-Q101


    Original     		PDF MGF4941CL MGF4941CL AEC-Q101 4000pcs RO4350B ROGERS transistor "micro-x" "marking" 3 RO4350B max current GD-32 low noise Micro-X marking "K" RO4350B

    Untitled

    Abstract: No abstract text available
    Text: MECKULNAT Ku-Band GaN HEMT Low Noise Amplifier VG1 VD1 VG2 VD2 Main Features VG3 VD3 RFin 0.25 µm GaN HEMT Technology 12 – 15 GHz full performance Frequency Range Small Signal Gain > 22 dB Noise Figure: < 1.75 dB P1dB > 21 dBm, Psat > 27 dBm Output TOI > 29 dBm


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: MECKULNA2 Ku-Band GaN HEMT Low Noise Amplifier VG1 VD1 VG2 VD2 Main Features VG3 VD3 RFin 0.25 µm GaN HEMT Technology 13 – 16 GHz full performance Frequency Range Small Signal Gain > 24.5 dB Noise Figure: < 2.5 dB P1dB > 21.5 dBm, Psat > 29.5 dBm Output TOI > 30 dBm


    Original     		PDF

    FHX35LG

    Abstract: FHX35 FHX35LG/002 fujitsu hemt fujitsu gaas fet hemt low noise die
    Text: FHX35X/002 FHX35LG/002 Low Noise HEMT DESCRIPTION The FHX35X/002 Chip and FHX35LG/002 packaged devices are HEMT High Electron Mobility Transistor ones suitable for use as the front end of an optical receiver in high speed lightwave communication systems.


    Original     		PDF FHX35X/002 FHX35LG/002 FHX35X/002 FHX35LG/002 FCSI0598M200 FHX35LG FHX35 fujitsu hemt fujitsu gaas fet hemt low noise die

    ATF-38143

    Abstract: ATF-38143-BLK ATF-38143-TR1 ATF-38143-TR2
    Text: Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package Technical Data ATF-38143 Features Surface Mount Package SOT-343 • Low Noise Figure Description Agilent Technologies’s ATF-38143 is a high dynamic range, low noise, PHEMT housed in a 4-lead


    Original     		PDF ATF-38143 OT-343 SC-70 OT-343) SC-70) ATF-38143 5968-7868E ATF-38143-BLK ATF-38143-TR1 ATF-38143-TR2

    low noise amplifier ghz

    Abstract: amplifier 1 2 ghz
    Text: HMC-ALH482 AMPLIFIERS - LOW NOISE - CHIP v00.0907 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 2 - 22 GHz Typical Applications Features This HMC-ALH482 is ideal for: Noise Figure: 1.7 dB @ 2-12 GHz • Wideband Communication Systems Noise Figure: 2.2 dB @ 12-22 GHz


    Original     		PDF HMC-ALH482 HMC-ALH482 low noise amplifier ghz amplifier 1 2 ghz

    FHX35

    Abstract: eudyna FHX35LG hemt low noise die fujitsu gaas fet
    Text: FHX35X/002 FHX35LG/002 Low Noise HEMT DESCRIPTION The FHX35X/002 Chip and FHX35LG/002 packaged devices are HEMT High Electron Mobility Transistor ones suitable for use as the front end of an optical receiver in high speed lightwave communication systems.


    Original     		PDF FHX35X/002 FHX35LG/002 FHX35X/002 FHX35LG/002 Co4888 FHX35 eudyna FHX35LG hemt low noise die fujitsu gaas fet

    HMC-ALH444

    Abstract: ALH444 hemt 20 dB 14 ghz GaAs 12 GHZ gain noise gate compression
    Text: HMC-ALH444 AMPLIFIERS - LOW NOISE - CHIP v00.1007 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 1 - 12 GHz Typical Applications Features This HMC-ALH444 is ideal for: Noise Figure: 1.75 dB @ 10 GHz • Wideband Communication Systems Gain: 17 dB • Surveillance Systems


    Original     		PDF HMC-ALH444 HMC-ALH444 ALH444 hemt 20 dB 14 ghz GaAs 12 GHZ gain noise gate compression

    Untitled

    Abstract: No abstract text available
    Text: HMC-ALH482 v04.1009 LOW NOISE AMPLIFIERS - CHIP 1 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 2 - 22 GHz Typical Applications Features This HMC-ALH482 is ideal for: Noise Figure: 1.7 dB @ 2-12 GHz • Wideband Communication Systems Noise Figure: 2.2 dB @ 12-22 GHz


    Original     		PDF HMC-ALH482 HMC-ALH482

    Untitled

    Abstract: No abstract text available
    Text: HMC-ALH482 v01.1207 LOW NOISE AMPLIFIERS - CHIP 1 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 2 - 22 GHz Typical Applications Features This HMC-ALH482 is ideal for: Noise Figure: 1.7 dB @ 2-12 GHz • Wideband Communication Systems Noise Figure: 2.2 dB @ 12-22 GHz


    Original     		PDF HMC-ALH482 HMC-ALH482

    Untitled

    Abstract: No abstract text available
    Text: HMC-ALH482 v04.1009 LOW NOISE AMPLIFIERS - CHIP 1 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 2 - 22 GHz Typical Applications Features This HMC-ALH482 is ideal for: Noise Figure: 1.7 dB @ 2-12 GHz • Wideband Communication Systems Noise Figure: 2.2 dB @ 12-22 GHz


    Original     		PDF HMC-ALH482 HMC-ALH482

    Untitled

    Abstract: No abstract text available
    Text: HMC-ALH482 v00.0907 LOW NOISE AMPLIFIERS - CHIP 1 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 2 - 22 GHz Typical Applications Features This HMC-ALH482 is ideal for: Noise Figure: 1.7 dB @ 2-12 GHz • Wideband Communication Systems Noise Figure: 2.2 dB @ 12-22 GHz


    Original     		PDF HMC-ALH482 HMC-ALH482

    amplifier schematic diagram SHARP

    Abstract: HMC-ALH444
    Text: HMC-ALH444 v02.0209 LOW NOISE AMPLIFIERS - CHIP 1 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 1 - 12 GHz Typical Applications Features This HMC-ALH444 is ideal for: Noise Figure: 1.75 dB @ 10 GHz • Wideband Communication Systems Gain: 17 dB • Surveillance Systems


    Original     		PDF HMC-ALH444 HMC-ALH444 amplifier schematic diagram SHARP

    alh444

    Abstract: HMC-ALH444
    Text: HMC-ALH444 v02.0209 LOW NOISE AMPLIFIERS - CHIP 1 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 1 - 12 GHz Typical Applications Features This HMC-ALH444 is ideal for: Noise Figure: 1.75 dB @ 10 GHz • Wideband Communication Systems Gain: 17 dB • Surveillance Systems


    Original     		PDF HMC-ALH444 HMC-ALH444 alh444

    Untitled

    Abstract: No abstract text available
    Text: HMC-ALH444 v01.1207 LOW NOISE AMPLIFIERS - CHIP 1 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 1 - 12 GHz Typical Applications Features This HMC-ALH444 is ideal for: Noise Figure: 1.75 dB @ 10 GHz • Wideband Communication Systems Gain: 17 dB • Surveillance Systems


    Original     		PDF HMC-ALH444 HMC-ALH444

    HMC-ALH445

    Abstract: No abstract text available
    Text: HMC-ALH445 AMPLIFIERS - LOW NOISE - CHIP v00.1007 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 18 - 40 GHz Typical Applications Features This HMC-ALH445 is ideal for: Noise Figure: 3.9 dB @ 28 GHz • Wideband Communication Systems Gain: 9 dB • Point-to-Point Radios


    Original     		PDF HMC-ALH445 HMC-ALH445

    fet transistor a03

    Abstract: MGFC4419
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC4419G InGaAs HEMT DESCRIPTION The MGFC4419G low-noise HEMT High Electron Mobility Transistor is designed for use in X to K band amplifiers. OUTLINE DRAWING FEATURES • Low noise figure NFmin. = 0.50dB (MAX.) • High associated gain


    OCR Scan     		PDF MGFC4419G MGFC4419G 12GHz fet transistor a03 MGFC4419

    GaAs FET HEMT Chips

    Abstract: on 5295 transistor MGFC4453A transistor on 4436 InGaAs HEMT mitsubishi low noise x band hemt transistor fet transistor a03 FET Spec sheet transistor on 5295 5458 transistor
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC4453A InGaAs HEMT DESCRIPTION The M G FC4453A low-noise HEMT High Electron Mobility OUTLINE DRAWING Transistor is designed for use in X to K band amplifiers. Unit : u m FEATURES Low noise figure @ f=12GHz NFmin. = 0.40dB (TYP.)


    OCR Scan     		PDF MGFC4453A MGFC4453A 12GHz 25pcs GaAs FET HEMT Chips on 5295 transistor transistor on 4436 InGaAs HEMT mitsubishi low noise x band hemt transistor fet transistor a03 FET Spec sheet transistor on 5295 5458 transistor

    2SK676

    Abstract: GaAs FET HEMT Chips
    Text: 2SK676H5 SONY AIGaAs/GaAs Low Noise Microwave HEMT CHIP Description Chip outline Unit: jum The 2SK 676H 5 is an AIGaAs/GaAs HEMT chip fabricated by MOCVD Metal Organic Chemical Vapor Deposition . This 0.5 micron gate FET features very low noise figure and high


    OCR Scan     		PDF 2SK676H5 2SK676H 2SK676 GaAs FET HEMT Chips

    TRW mmic

    Abstract: No abstract text available
    Text: TLH124C HEMT Image Rejection Downconverter GaAs Telecom Products Features RF frequency: 37 to 40 GHz Noise figure: 4.0 dB Conversion gain: 7.0 dB Self bias: 5V/95 mA Built-in LO drive amplifier Description and Applications The TLH124C is a monolithic HEMT low-noise image rejection downconverter designed for


    OCR Scan     		PDF TLH124C TLH124C 90-degree 50-ohm 9701455-S-J1 TRW mmic

    MGF4310

    Abstract: MGF4910 MGF4914C MGF4318E-01 MGF4918D MGF4914 MGF4917 MGFC4418 MGFC4416 MGF4318
    Text: Die_MGFC4410 SERIES Package MGF4310 SERIES MGF4910 SERIES a ^MITSUBISHI ELECTRONIC DEVICE GROUP D Series - 0.25um X 200um DESCRIPTION “T“ GATE STRUCTURE The super low noise HEMT device family is designed for applications requiring high performance acheiving ultra low noise figures.


    OCR Scan     		PDF MGFC4410 MGF4310 MGF4910 200um 8E-30 MGF4914E-01 MGF4918E-01 12GHz, MGF4914C MGF4318E-01 MGF4918D MGF4914 MGF4917 MGFC4418 MGFC4416 MGF4318

    sony 0642

    Abstract: No abstract text available
    Text: SONY CORP/COMPONENT PRODS 4TE D 0302303 0003150 3 2SK677H5 SONY, AIGaAs/GaAs Low Noise Microwave HEMT CHIP Unit: ju.m Chip outline Description The 2SK677H5 is an AIGaAs/GaAs HEMT chip fabricated by MOCVD Metal Organic Chemical Vapor Deposition . This 0.5 micron


    OCR Scan     		PDF 2SK677H5 2SK677H5 D0G312b sony 0642