HAT2116H Search Results

HAT2116H Result Highlights (1)

Part	ECAD Model	Manufacturer	Description	Download	Buy
HAT2116H-EL-E		Renesas Electronics Corporation	Nch Single Power Mosfet 30V 30A 8.2Mohm Lfpak

HAT2116H Price and Stock

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Renesas Electronics Corporation HAT2116H-EL-E MOSFET N-CH 30V 30A LFPAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	HAT2116H-EL-E	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Quest Components	HAT2116H-EL-E		2,277			1 $2.144 10 $2.144 100 $2.144 1000 $0.8844 10000 $0.804	Buy Now

HAT2116H Datasheets (3)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
HAT2116H		Renesas Technology	Silicon N-Channel MOS FET		Original	PDF
HAT2116H		Renesas Technology	MOSFET, Switching; VDSS (V): 30; ID (A): 30; Pch : 15; RDS (ON) typ. (ohm) @10V: 0.0063; RDS (ON) typ. (ohm) @4V[4.5V]: [0.0105]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1650; toff ( us) typ: 0.048; Package: LFPAK		Original	PDF
HAT2116H-EL-E		Renesas Technology	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 30A LFPAK		Original	PDF

HAT2116H Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
HAT2116H-EL-E Abstract: HAT2116H Text: HAT2116H Silicon N Channel Power MOS FET Power Switching REJ03G1189-0400 Previous: ADE-208-1575B Rev.4.00 Sep 07, 2005 Features • • • • Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS (on) = 6.3 mΩ typ. (at VGS = 10 V)	Original	PDF	HAT2116H REJ03G1189-0400 ADE-208-1575B) PTZZ0005DA-A HAT2116H-EL-E HAT2116H
HAT2116H Abstract: No abstract text available Text: HAT2116H Silicon N Channel Power MOS FET Power Switching ADE-208-1575B Z 3rd. Edition Aug. 2002 Features • Capable of 4.5 V gate drive • Low drive current • High density mounting • Low on-resistance RDS(on) = 6.3 mΩ typ. (at VGS = 10 V) Outline	Original	PDF	HAT2116H ADE-208-1575B D-85622 D-85619 HAT2116H
BIHM65-H4R0 Abstract: LM431BIM3 C1608X7R2A561K 12AQ3 Text: ISL6740EVAL3 Application Note Specifications -11.8 -12VO, REG/DSL 14 OUTPUTS 200kHz/300kHz -12.0 -12.2 36VI/-12VO 48VI/-12VO 60VI/-12VO 72VI/-12VO -12.4 -12.6 • Input Voltage: 36V to 72V -12.8 • Outputs: 3.3V ±1% @ 4A 1.5V ±1% @ 7A 12V +3.5%/-10% (typical) @ 1.5A	Original	PDF	ISL6740EVAL3 AN1127 ISL6740EVAL3 ISL6740 ISL6402 36VI/-12VO 48VI/-12VO BIHM65-H4R0 LM431BIM3 C1608X7R2A561K 12AQ3
STF12A80 Abstract: BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B Text: Cross Reference For the most up to date cross reference, go to the product portal: Manufacturer type number Manufacturer Philips type number Page number Manufacturer type number Manufacturer	Original	PDF	02CZ10 02CZ11 02CZ12 02CZ13 02CZ15 02CZ16 02CZ18 02CZ2 02CZ20 STF12A80 BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B
IRF1830G Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696 Text: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Inﬁneon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23	Original	PDF	AO4405 AO4407 AO4408 AO4409 AO4410 AO4411 AO4413 AO4415 AO4422 AO4700 IRF1830G IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
HAT2116H Abstract: HAT2116H-EL-E Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original	PDF
1002ds Abstract: 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 HITACHI 08122B transistor h945 6030v4 2SC 8050 25aaj Text: 2004.1 Renesas Transistors/Thyristors/Triacs Status List Topic—High Frequency Silicon Bipolar Transistor "2SC5998" •············································································ 2	Original	PDF	2SC5998" C5139 2SC5247 2SC5907 2SD1504 2SJ361 2SK439 2SK494 2SK3349 BCR5KM-12L 1002ds 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 HITACHI 08122B transistor h945 6030v4 2SC 8050 25aaj
PS2801-1-A Abstract: REG IC 48V IN 12V 10A OUT DPAK369C Vishay 470uF E 40748-LF1 31660 X7R ROHS .1uF smd cr7 HAT2116H-EL-E Midcom 7 Text: ISL6740EVAL3Z Application Note AN1127.2 -11.8 -12VO, REG/DSL 14 OUTPUTS 200kHz/300kHz -12.0 -12.2 VOUT (V) The ISL6740EVAL3Z serves as a reference design for a 48V to ±12V, 3.3V and 1.5V isolated power supply. It utilizes an ISL6740 double-ended voltage mode controller in half bridge	Original	PDF	ISL6740EVAL3Z AN1127 -12VO, 200kHz/300kHz) ISL6740EVAL3Z ISL6740 ISL6402 36VI/-12VO 48VI/-12VO PS2801-1-A REG IC 48V IN 12V 10A OUT DPAK369C Vishay 470uF E 40748-LF1 31660 X7R ROHS .1uF smd cr7 HAT2116H-EL-E Midcom 7
rjh3047 Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055 Text: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing	Original	PDF	REJ01G0001-0400 rjh3047 rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
SMD 47UF/SN74AHC138 Abstract: No abstract text available Text: Application Note 1826 Author: Richard Kroeger ISL9520EVAL1Z Evaluation Board Setup Procedure The ISL9520 is a highly integrated Narrow VDC regulator/battery charger controller for Li-ion/Li-ion polymer batteries. It has an SMBus interface and provides gate drive to	Original	PDF	ISL9520EVAL1Z ISL9520 AN1826 SMD 47UF/SN74AHC138
lvc16244 Abstract: BC240 2sk3174 CBT1G125 LV2GT14A HC32 Hitachi HA13557A transistor 2SC1162 H8 hitachi programming manual 30204SP Text: HITACHI ELECTRONIC COMPONENTS DATABOOK 2003 INDEX General Informations Multi Perpose Products Safety Considerations Hitachi Semiconductor Package Databook HITACHI Sales Locations Diodes Microcontroller Microcontroller General Microcontroller Overview List	Original	PDF	HD49323A HA12134A HA12141N HA12155N HA12163 HA12167F HA12173 HA12179F HA12181F HA12187F lvc16244 BC240 2sk3174 CBT1G125 LV2GT14A HC32 Hitachi HA13557A transistor 2SC1162 H8 hitachi programming manual 30204SP
2SC 8550 Abstract: 6020v4 6030v4 HITACHI 08122B 2SC 8050 HITACHI 08123B transistor h945 H945 TRANSISTOR c 6030v4 2sk3545 Text: Status List HITACHI TRANSISTOR/GaAsIC Vol.16-4 2002.11 Topic - Hitachi High Frequency Bipolar Transistors . 2 Index . 3, 4	Original	PDF	3SK309 3SK317 3SK318 BB101C BB102C BB301C BB302C BB304C BB305C BB501C 2SC 8550 6020v4 6030v4 HITACHI 08122B 2SC 8050 HITACHI 08123B transistor h945 H945 TRANSISTOR c 6030v4 2sk3545
HAT2116H Abstract: No abstract text available Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog	Original	PDF	D-85622 D-85619 HAT2116H
rjp3053 Abstract: RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009 Text: 2007.10 Renesas Transistors/Thyristors/Triacs Status List Topic_New-Generation Power MOS FET: Low Loss MOS FET " JET " 10th Gen. - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3 to 5	Original	PDF	REJ16G0001-1900 rjp3053 RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009

1002ds Abstract: 4008ZB 2SC 9012 MP 1009 es 2SC 8050 20AAJ-8H 6020v4 2SC1417 2SC 8550 cr3as Text: 2004.4 Renesas Transistors/Thyristors/Triacs Status List Topic—CMFPAK-6 Series of Power MOS FETs for Portable Devices •·······················································2 Index ······················································································3 to 5	Original	PDF	24EMP BRC124ETP BRC143ETP BRC144ECM CR3KM-12 FS10KM-6 FS10VS-6 FS16KM-6 FS16VS-6 HAT3017R 1002ds 4008ZB 2SC 9012 MP 1009 es 2SC 8050 20AAJ-8H 6020v4 2SC1417 2SC 8550 cr3as
HAT2116H Abstract: No abstract text available Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original	PDF
HAT1125H Abstract: ff 0401 HAT2270H LFPAK footprint Renesas rjk305 uPA2749UT1A RJK03C1DPB RJK305DPB UPA2802T1L UPA2807T1L Text: High performance PowerMOSFET for low voltage industrial and consumer applications www.renesas.eu 2010.09 To meet future design demands for high performance cost and space reductions the high performance PowerMOSFET provide design engineers with a head start. A wide voltage range VDSS = 12V.250V of high efficient	Original	PDF	uPA27xxUT1A R07PF0002ED0100 HAT1125H ff 0401 HAT2270H LFPAK footprint Renesas rjk305 uPA2749UT1A RJK03C1DPB RJK305DPB UPA2802T1L UPA2807T1L
H7N1009MD Abstract: HAT2153RJ TRANSISTOR FS10KM HAT2180RP DIODE H5N H7P1006MD immobilizer antenna CR3AS-12 HAT1081R cr3as Text: Power-Device Renesas Power MOS FETs, IGBTs, Triacs, and Thyristors Products April, 2004 Standard Product Business Group Discrete and Standerd IC Business Unit Renesas Technology Corp. Power-Device Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility	Original	PDF	CR3KM-12 CR6KM-12 CR8KM-12 O-220FN OT-89 CR03AM-16 CR04AM-12 SC-59 CR03AM-12 CR05AM-12 H7N1009MD HAT2153RJ TRANSISTOR FS10KM HAT2180RP DIODE H5N H7P1006MD immobilizer antenna CR3AS-12 HAT1081R cr3as