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Infineon Technologies AG BGT60TR13CE6327XUMA1 SENSOR - RADAR SENSOR DIGITAL
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	BGT60TR13CE6327XUMA1	Digi-Reel	4,008		1	1 $20.99 10 $16.491 100 $13.5041 1000 $12.07116 10000 $12.07116	Buy Now
	BGT60TR13CE6327XUMA1	Cut Tape	4,008		1	1 $20.99 10 $16.491 100 $13.5041 1000 $12.07116 10000 $12.07116	Buy Now
Avnet Americas	BGT60TR13CE6327XUMA1	Reel	9,000	13 Weeks	1	1 $11.56313 10 $11.56313 100 $11.56313 1000 $11.56313 10000 $11.56313	Buy Now
	BGT60TR13CE6327XUMA1	Ammo Pack		16 Weeks, 4 Days	1	1 $17.5 10 $16.11 100 $13.81 1000 $13.81 10000 $13.81	Buy Now
Newark	BGT60TR13CE6327XUMA1	Cut Tape	3,090		1	1 $17.5 10 $16.11 100 $13.81 1000 $11.81 10000 $11.81	Buy Now
Chip1Stop	BGT60TR13CE6327XUMA1	Cut Tape	89			1 $12.9 10 $12.7 100 $12.7 1000 $12.7 10000 $12.7	Buy Now
EBV Elektronik	BGT60TR13CE6327XUMA1			14 Weeks	4,500	1 - 10 - 100 - 1000 - 10000 -	Buy Now

Flip Electronics	BGT60TR13CE6327XUMA1		5,000			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Infineon Technologies AG BGT60ATR24CE6327XTMA1 SENSOR - RADAR SENSOR DIGITAL
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	BGT60ATR24CE6327XTMA1	Digi-Reel	3,446		1	1 $30.76 10 $24.334 100 $20.0963 1000 $18.0716 10000 $18.0716	Buy Now
	BGT60ATR24CE6327XTMA1	Cut Tape	3,446		1	1 $30.76 10 $24.334 100 $20.0963 1000 $18.0716 10000 $18.0716	Buy Now
Avnet Americas	BGT60ATR24CE6327XTMA1	Reel	3,500	13 Weeks	3,500	1 - 10 - 100 - 1000 - 10000 $17.76851	Buy Now
Newark	BGT60ATR24CE6327XTMA1	Cut Tape	44		1	1 $26.19 10 $24.17 100 $20.48 1000 $18.13 10000 $18.13	Buy Now
Rochester Electronics	BGT60ATR24CE6327XTMA1		3,500		1	1 $17.75 10 $17.75 100 $16.69 1000 $15.09 10000 $15.09	Buy Now
Chip1Stop	BGT60ATR24CE6327XTMA1	Cut Tape	70			1 $16.5 10 $16.4 100 $16.4 1000 $16.4 10000 $16.4	Buy Now

EBV Elektronik	BGT60ATR24CE6327XTMA1			14 Weeks	3,500	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Infineon Technologies AG BGT60LTR11AIPE6327XUMA2 IC RF TXRX+MCU ISM>1GHZ 42UF2BGA
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	BGT60LTR11AIPE6327XUMA2	Cut Tape	3,410		1	1 $12.53 10 $9.762 100 $7.9043 1000 $6.70053 10000 $6.70053	Buy Now
	BGT60LTR11AIPE6327XUMA2	Digi-Reel	3,410		1	1 $12.53 10 $9.762 100 $7.9043 1000 $6.70053 10000 $6.70053	Buy Now
Mouser Electronics	BGT60LTR11AIPE6327XUMA2		4,313			1 $11.59 10 $9.65 100 $7.82 1000 $6.66 10000 $5.59	Buy Now
Newark	BGT60LTR11AIPE6327XUMA2	Cut Tape	3,247		1	1 $12.12 10 $10.13 100 $8.22 1000 $7 10000 $7	Buy Now
Rochester Electronics	BGT60LTR11AIPE6327XUMA2		3,500		1	1 $6.46 10 $6.46 100 $6.07 1000 $5.49 10000 $5.49	Buy Now
Chip1Stop	BGT60LTR11AIPE6327XUMA2	Cut Tape	4,824			1 $5.79 10 $5.76 100 $5.69 1000 $5.41 10000 $5.41	Buy Now

EBV Elektronik	BGT60LTR11AIPE6327XUMA2			14 Weeks	5,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Flip Electronics	BGT60LTR11AIPE6327XUMA2		5,000			1 - 10 - 100 - 1000 - 10000 -	Get Quote
NXP Semiconductors MC9S08GT60ACFDER IC MCU 8BIT 60KB FLASH 48QFN
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MC9S08GT60ACFDER	Cut Tape	3,380		1	1 $14.73 10 $11.638 100 $10.0174 1000 $9.1686 10000 $9.1686	Buy Now
	MC9S08GT60ACFDER	Digi-Reel	3,380		1	1 $14.73 10 $11.638 100 $10.0174 1000 $9.1686 10000 $9.1686	Buy Now
	MC9S08GT60ACFDER	Reel	2,000		2,000	1 - 10 - 100 - 1000 - 10000 $9.00354	Buy Now
Avnet Silica	MC9S08GT60ACFDER			15 Weeks	2,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
EBV Elektronik	MC9S08GT60ACFDER			15 Weeks	2,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Microchip Technology Inc APT40GT60BRG IGBT NPT 600V 80A TO247
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	APT40GT60BRG	Tube	608		1	1 $10.49 10 $7.239 100 $5.4025 1000 $5.4025 10000 $5.4025	Buy Now
NAC	APT40GT60BRG	Tube			70	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Richardson RFPD	APT40GT60BRG				1	1 - 10 - 100 - 1000 - 10000 -	Get Quote

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GT60 Datasheets (75)

Part	Manufacturer	Description	Datasheet Type	PDF
GT600	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF
GT60-005	Fronter Electronics	DIODE SWITCHING DIODE 50V 22A 2GT	Original	PDF
GT60-005	Frontier Electronics	6A GENERAL PURPOSE PLASTIC RECTIFIER	Original	PDF
GT60-005G	Frontier Electronics	6A GLASS PASSIVATED GENERAL PURPOSE RECTIFIER	Original	PDF
GT60-01	Fronter Electronics	DIODE SWITCHING DIODE 100V 22A 2GT	Original	PDF
GT60-01	Frontier Electronics	6A GENERAL PURPOSE PLASTIC RECTIFIER	Original	PDF
GT60-01G	Frontier Electronics	6A GLASS PASSIVATED GENERAL PURPOSE RECTIFIER	Original	PDF
GT60-02	Fronter Electronics	DIODE SWITCHING DIODE 200V 22A 2GT	Original	PDF
GT60-02	Frontier Electronics	6A GENERAL PURPOSE PLASTIC RECTIFIER	Original	PDF
GT60-02G	Frontier Electronics	6A GLASS PASSIVATED GENERAL PURPOSE RECTIFIER	Original	PDF
GT60-04	Frontier Electronics	6A GENERAL PURPOSE PLASTIC RECTIFIER	Original	PDF
GT60-04G	Frontier Electronics	6A GLASS PASSIVATED GENERAL PURPOSE RECTIFIER	Original	PDF
GT60-06	Fronter Electronics	DIODE SWITCHING DIODE 600V 22A 2GT	Original	PDF
GT60-06	Frontier Electronics	6A GENERAL PURPOSE PLASTIC RECTIFIER	Original	PDF

GT60-06G	Frontier Electronics	6A GLASS PASSIVATED GENERAL PURPOSE RECTIFIER	Original	PDF
GT60-10	Fronter Electronics	DIODE SWITCHING DIODE 1000V 22A 2GT	Original	PDF
GT60-10	Frontier Electronics	6A GENERAL PURPOSE PLASTIC RECTIFIER	Original	PDF
GT60-10G	Frontier Electronics	6A GLASS PASSIVATED GENERAL PURPOSE RECTIFIER	Original	PDF
GT605	Taiwan Semiconductor	6.0 A Glass Passivated Rectifier	Original	PDF
GT605	Taiwan Semiconductor	6.0 AMPS. Glass Passivated Rectifiers	Original	PDF

GT60 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: GT605 THRU GT610 6.0 AMPS. Glass Passivated Rectifiers Voltage Range 50 to 1000 Volts Current 6.0 Amperes GT Features Low forward voltage drop High current capability High reliability High surge current capability Mechanical Data Cases: Molded plastic Epoxy: UL 94V-0 rate flame retardant	Original	PDF	GT605 GT610 MILSTD-202, 25ambient GT610)
GT60M323 Abstract: No abstract text available Text: GT60M323 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60M323 Voltage Resonance Inverter Switching Application Unit: mm • Enhancement-mode • High speed • Low saturation voltage : VCE sat = 2.3 V (typ.) (IC = 60 A) • FRD included between emitter and collector	Original	PDF	GT60M323 GT60M323
GT60-04 Abstract: GT60-005G GT60-10G TA60 GT60-04G Text: GT60-005G THRU GT60-10G FRONTIER ELECTRONICS CO., LTD. 6A GLASS PASSIVATED GENERAL PURPOSE RECTIFIER FEATURES ! UL 94V0 FLAME RETARDANT EPOXY MOLDING COMPOUND ! DIFFUSED JUNCTION ! HIGH SURGE CURRENT CAPABILITY ! BEVEL ROUND CHIP,AVALANCHE OPERATION ! GLASS PASSIVATED JUNCTION	Original	PDF	GT60-005G GT60-10G 300us GT60-04 GT60-005G GT60-10G TA60 GT60-04G
GT60M303 Abstract: GT60M303 application GT60M303 circuit Text: GT60M303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT60M303 Unit: mm HIGH POWER SWITCHING APPLICATIONS The 4th Generation FRD Included Between Emitter and Collector Enhancement−Mode High Speed IGBT : tf = 0.25µs TYP. FRD : trr = 0.7µs (TYP.)	Original	PDF	GT60M303 GT60M303 GT60M303 application GT60M303 circuit
GT60J321 Abstract: No abstract text available Text: GT60J321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60J321 The 4th Generation Soft Switching Applications • Enhancement-mode • High speed: tf = 0.30 µs typ. (IC = 60 A) • Low saturation voltage: VCE (sat) = 1.55 V (typ.) (IC = 60 A)	Original	PDF	GT60J321 GT60J321
610G Abstract: GT605G GT64G Text: 6 Amp Glass Passivated Quick Connect Rectifier GT605G~ GT610G 6 Amp Glass Passivated Quick Connect Rectifier Features • • • • Package suitable for assembly Glass passivated junction High current capability Plastic package has underwriters laboratory	Original	PDF	GT605G~ GT610G 610G GT605G GT64G
GT60J323 Abstract: GT60J IC-3360 PF1510000 Text: GT60J323 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60J323 Current Resonance Inverter Switching Application • Enhancement mode type • High speed : tf = 0.16 s typ. (IC = 60A) • Low saturation voltage: VCE (sat) = 1.9 V (typ.) (IC = 60A)	Original	PDF	GT60J323 GT60J323 GT60J IC-3360 PF1510000
GT60M303 application Abstract: GT60M303 Text: GT60M303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT60M303 HIGH POWER SWITCHING APPLICATIONS Unit: mm Fourth generation IGBT FRD included between emitter and collector Enhancement mode type High speed IGBT : tf = 0.25 s TYP. FRD : trr = 0.7 s (TYP.)	Original	PDF	GT60M303 GT60M303 application GT60M303
Untitled Abstract: No abstract text available Text: GT60J323 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60J323 Current Resonance Inverter Switching Application • Enhancement mode type • High speed : tf = 0.16 s typ. (IC = 60A) • Low saturation voltage: VCE (sat) = 1.9 V (typ.) (IC = 60A)	Original	PDF	GT60J323
GT60M303 application Abstract: GT60M303 circuit igbt failure rate Text: GT60M303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT60M303 HIGH POWER SWITCHING APPLICATIONS Unit: mm z Fourth generation IGBT z FRD included between emitter and collector z Enhancement mode type z High speed IGBT : tf = 0.25µs TYP.	Original	PDF	GT60M303 GT60M303 application GT60M303 circuit igbt failure rate
Untitled Abstract: No abstract text available Text: GT60J321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60J321 The 4th Generation Soft Switching Applications • Unit: mm Enhancement-mode • High speed: tf = 0.30 µs typ. (IC = 60 A) • Low saturation voltage: VCE (sat) = 1.55 V (typ.) (IC = 60 A)	Original	PDF	GT60J321 2-21F2C
GT605 Abstract: GT610 Text: GT605 THRU GT610 6.0 AMPS. Glass Passivated Rectifiers Voltage Range 50 to 1000 Volts Current 6.0 Amperes GT Features Low forward voltage drop High current capability High reliability High surge current capability Mechanical Data Cases: Molded plastic Epoxy: UL 94V-0 rate flame retardant	Original	PDF	GT605 GT610 MILSTD-202, 25ambient GT610
GT60M322 Abstract: No abstract text available Text: GT60M322 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60M322 Voltage Resonance Inverter Switching Application Current Resonance Inverter Switching Application • Enhancement mode type • High speed • Low saturation voltage : VCE sat = 2.3 V (typ.) (IC = 60 A)	Original	PDF	GT60M322 GT60M322
Untitled Abstract: No abstract text available Text: GT60N321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60N321 High-Power Switching Applications Fourth Generation IGBT Unit: mm • FRD included between emitter and collector • Enhancement mode type • High speed IGBT : tf = 0.25 s typ. (IC = 60 A)	Original	PDF	GT60N321 170mitation,

GT60M101 Abstract: No abstract text available Text: INSULATED GATE BIPOLAR TRANSISTOR GT60M101 SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. Unit in mm 20.5MAX #3.3±0.2 . High Input Impedance . High Speed : tf=0.7ns Max. . Low Saturation Voltage : VcE(sat)=4.0V(Max.) . Enhancement-Mode 2.51 3.0	OCR Scan	PDF	GT60M101 --15V GT60M101
GT60M303 Abstract: No abstract text available Text: TOSHIBA GT60M303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE GT60M303 HIGH PO W ER SWITCHING APPLICATIONS Unit in mm The 4th Generation FRD Included Between Emitter and Collector Enhancement-Mode High Speed IGBT : tf=0.25//s TYP.	OCR Scan	PDF	GT60M303 25//s GT60M303
Untitled Abstract: No abstract text available Text: TOSHIBA GT60M301 TO SHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANN EL MOS TYPE GT60M301 Unit in mm HIGH POWER SW ITCHING APPLICATIONS • • • • The 3rd Generation FRD Included Between Emitter and Collector Enhancement-Mode High Speed Iq BT tf=0.25/¿s Typ.	OCR Scan	PDF	GT60M301
GT60M302 Abstract: P channel 600v 20a IGBT Text: TOSHIBA GT60M302 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE GT60M302 HIGH POWER SWITCHING APPLICATIONS • The 3rd Generation FRD Included Between Emitter and Collector Enhancement-Mode High Speed IGBT tf=0.22/¿s TYP. FRD trr —0.7/¿s (TYP.)	OCR Scan	PDF	GT60M302 GT60M302 P channel 600v 20a IGBT
Untitled Abstract: No abstract text available Text: TOSHIBA GT60M303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE GT60M303 HIGH POWER SWITCHING APPLICATIONS Unit in mm The 4th Generation FRD Included Between Emitter and Collector Enhancement-Mode High Speed IGBT : tf=0.25//s TYP. FRD	OCR Scan	PDF	GT60M303 25//s
GT60M301 Abstract: 20A igbt Text: TOSHIBA GT60M301 TO SH IBA INSULATED GATE BIPO LA R TRANSISTOR SILICON N C HANNEL M O S TYPE GT60M301 U nit in mm HIGH PO W E R SWITCHING APPLICATIONS. • • • • • The 3rd Generation FRD Included Between Emitter and Collector Enhancement-Mode H igh sp eed IGBT : tf= 0.25/^s TYP.	OCR Scan	PDF	GT60M301 GT60M301 20A igbt
Untitled Abstract: No abstract text available Text: GT60M104 TOSHIBA TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT G T 6 0 M 1 04 Unit in mm HIGH POWER SWITCHING APPLICATIONS High Input Impedance High Speed : tf=0.4//s Max. Low Saturation Voltage : V q e (sat)~^-?V (Max.) Enhancement-Mode	OCR Scan	PDF	GT60M104 S5J12
transistor fc 1013 Abstract: No abstract text available Text: TOSHIBA GT60M302 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE GT60M302 HIGH POWER SWITCHING APPLICATIONS U nit in mm 03.3 + 0.2 20.5MM. • The 3rd Generation • FRD Included Between Em itter and Collector • Enhancement-Mode •	OCR Scan	PDF	GT60M302 transistor fc 1013
S5J12 Abstract: IC60N gt60m104 Text: SILICON N CHANNEL MOS TYPE GT60M104 U n i t in n m HIGH POWER SWITCHING APPLICATIONS. 0 3 .3 ± 0 .2 2 0 .5 MAX . H i g h Inp u t I m p e d a n c e . High Speed : tf=0.4us Max„ . Low Saturation Voltage : Vc£(s a t)*3.7V(Max.) • H ^ L «12 M ■ . Enhancement-Mode	OCR Scan	PDF	GT60M104 S5J12 S5J12 IC60N gt60m104
Untitled Abstract: No abstract text available Text: TO SH IBA GT60M104 TO SH IBA INSULATED GATE BIPO LAR TRANSISTOR SILICON N -CH ANNEL IGBT G T 6 0 M 1 04 HIGH POW ER SW ITCHING APPLICATIONS U nit in mm High Input Impedance High Speed : tf= 0 .4 /is Max. Low Saturation Voltage : V q e (sat) = 3 '7 v (Max.)	OCR Scan	PDF	GT60M104

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GT60 Price and Stock

Infineon Technologies AG BGT60TR13CE6327XUMA1

Infineon Technologies AG BGT60ATR24CE6327XTMA1

Infineon Technologies AG BGT60LTR11AIPE6327XUMA2

NXP Semiconductors MC9S08GT60ACFDER

Microchip Technology Inc APT40GT60BRG

GT60 Datasheets (75)

GT60 Datasheets Context Search

Untitled

GT60M323

GT60-04

GT60M303

GT60J321

610G

GT60J323

GT60M303 application

Untitled

GT60M303 application

Untitled

GT605

GT60M322

Untitled

GT60M101

GT60M303

Untitled

GT60M302

Untitled

GT60M301

Untitled

transistor fc 1013

S5J12

Untitled