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Murata Manufacturing Co Ltd GRM188B31H104KA92D CERAMIC CAPACITOR, MULTILAYER, CERAMIC, 50V, 10% +TOL, 10% -TOL, B, 10% TC, 0.1UF, SURFACE MOUNT, 0603
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	GRM188B31H104KA92D		3,723,458			1 $0.9 10 $0.9 100 $0.9 1000 $0.9 10000 $0.1575	Buy Now
ComSIT USA	GRM188B31H104KA92D		16,000			1 - 10 - 100 - 1000 - 10000 -	Get Quote

GRM188B31H104KA92D Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
GRM188B31H104KA92D		muRata	Monolithic Ceramic Capacitors		Original	PDF

GRM188B31H104KA92D Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
EGN26C070I2D Abstract: No abstract text available Text: EGN26C070I2D High Voltage - High Power GaN-HEMT FEATURES High Voltage Operation : VDS=50V High Power : 48.8dBm typ. @ Psat High Efficiency: 70%(typ.) @ Psat Power Gain : 18dB(typ.) @ f=2.6GHz Proven Reliability DESCRIPTION SEI's GaN-HEMT offers high efficiency, ease of matching, greater	Original	PDF	EGN26C070I2D 25deg /-10MHz EGN26C070I2D
6-10 Ghz RF Power 100w amplifier Abstract: 2S110 GSC356-HYB2300 GRM55ER72A475K EGN26C070I2D GRM188B11H102KA01D 60Ghz GaN amplifier 100W GRM188B31H104KA92D JESD22-A114 Text: EGN26C070I2D GaN-HEMT 75W High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 48.8dBm typ. @ Psat ・High Efficiency: 70%(typ.) @ Psat ・Power Gain : 18dB(typ.) @ f=2.6GHz ・Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater	Original	PDF	EGN26C070I2D /-10MHz 6-10 Ghz RF Power 100w amplifier 2S110 GSC356-HYB2300 GRM55ER72A475K EGN26C070I2D GRM188B11H102KA01D 60Ghz GaN amplifier 100W GRM188B31H104KA92D JESD22-A114
CS3376C Abstract: GRM188B11H102KA01D ATC100B100JW500 risho GRM188B31H104KA92D EGN35C070I2D GSC364-HYB3500 JESD22-A114 MCR03EZPJ101 MCR18EZPJ101 Text: EGN35C070I2D GaN-HEMT 75W High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 48.8dBm typ. @ Psat ・High Efficiency: 60%(typ.) @ Psat ・Power Gain : 15.5dB(typ.) @ f=3.5GHz ・Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater	Original	PDF	EGN35C070I2D 43dBm /-10MHz CS3376C GRM188B11H102KA01D ATC100B100JW500 risho GRM188B31H104KA92D EGN35C070I2D GSC364-HYB3500 JESD22-A114 MCR03EZPJ101 MCR18EZPJ101
2S110 Abstract: GRM188B11H102KA01D Text: EGN26C070I2D GaN-HEMT 75W High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 48.8dBm typ. @ Psat ・High Efficiency: 70%(typ.) @ Psat ・Power Gain : 18dB(typ.) @ f=2.6GHz ・Proven Reliability DESCRIPTION Eudyna's GaN-HEMT offers high efficiency, ease of matching, greater	Original	PDF	EGN26C070I2D /-10MHz /-10MHz 2S110 GRM188B11H102KA01D
chn 513 Abstract: chn 135 GRM188B11H102KA01D CHN 219 GRM188B31H104KA92D grm188B31E105K RK73B1ETTD104J CHN 136 chn 238 RK73B1ETTD121J Text: お客様各位カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジが合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社	Original	PDF	78K0/Ix2LED 78K0/IY2 78K0/IA2 78K0/IB2 U19666JJ1V0AN001 U19666JJ1V0AN chn 513 chn 135 GRM188B11H102KA01D CHN 219 GRM188B31H104KA92D grm188B31E105K RK73B1ETTD104J CHN 136 chn 238 RK73B1ETTD121J
CHN 234 diode Abstract: dali master schematic GRM188B31H104KA92D DMX RECEIVER diode chn 115 dali power supply circuit diagram dmx512 RK73B1 chn 711 dali schematic Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original	PDF	G0706 CHN 234 diode dali master schematic GRM188B31H104KA92D DMX RECEIVER diode chn 115 dali power supply circuit diagram dmx512 RK73B1 chn 711 dali schematic
Untitled Abstract: No abstract text available Text: EGN35C070I2D High Voltage - High Power GaN-HEMT FEATURES High Voltage Operation : VDS=50V High Power : 48.8dBm typ. @ Psat High Efficiency: 60%(typ.) @ Psat Power Gain : 15.5dB(typ.) @ f=3.5GHz Proven Reliability DESCRIPTION SEI's GaN-HEMT offers high efficiency, ease of matching, greater	Original	PDF	EGN35C070I2D 25deg /-10MHz
CS3376C Abstract: EGN35C070I2D CS-3376C TZY2Z010A001 GRM188B11H102KA01D GSC364 HYB3500 JESD22-A114 MCR18EZPJ101 GRM188B11h Text: EGN35C070I2D GaN-HEMT 75W High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 48.8dBm typ. @ Psat ・High Efficiency: 60%(typ.) @ Psat ・Power Gain : 15.5dB(typ.) @ f=3.5GHz ・Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater	Original	PDF	EGN35C070I2D 43dBm /-10MHz CS3376C EGN35C070I2D CS-3376C TZY2Z010A001 GRM188B11H102KA01D GSC364 HYB3500 JESD22-A114 MCR18EZPJ101 GRM188B11h