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    20n60c3

    Abstract: 20N60C3 equivalent sp*20n60c3 20n60c Q67040-S4397 diode smd marking code 621 20n60 SPB20N60C3 S4410 spp20n60
    Text: Preliminary data SPP20N60C3, SPB20N60C3 SPA20N60C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary VDS @ Tjmax 650 V • Worldwide best RDS on in TO 220 RDS(on) 0.19 Ω ID 20.7 A • Ultra low gate charge


    Original     		PDF SPP20N60C3, SPB20N60C3 SPA20N60C3 P-TO220-3-31 P-TO263-3-2 P-TO220-3-1 SPP20N60C3 Q67040-S4398 20n60c3 20N60C3 equivalent sp*20n60c3 20n60c Q67040-S4397 diode smd marking code 621 20n60 SPB20N60C3 S4410 spp20n60

    11N60C3

    Abstract: transistor 11n60c3 11N60C 11N60 Q67040-S4395 Q67040-S4396 SPA11N60C3 SPB11N60C3 SPI11N60C3 SPP11N60C3
    Text: Preliminary data SPP11N60C3, SPB11N60C3 SPI11N60C3, SPA11N60C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary VDS @ Tjmax 650 V • Ultra low gate charge RDS on 0.38 Ω 11 A • Periodic avalanche rated


    Original     		PDF SPP11N60C3, SPB11N60C3 SPI11N60C3, SPA11N60C3 P-TO220-3-31 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 SPP11N60C3 11N60C3 transistor 11n60c3 11N60C 11N60 Q67040-S4395 Q67040-S4396 SPA11N60C3 SPB11N60C3 SPI11N60C3 SPP11N60C3

    SPA11N60C2

    Abstract: AN-TO220-3-31-01 11N60C2 11N60C GPT09301 SDP06S60
    Text: Preliminary data SPA11N60C2 Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS 600 V •=Periodic avalanche rated R DS on 0.38 Ω • Extreme dv/dt rated


    Original     		PDF SPA11N60C2 P-TO220-3-31 P-TO220-3-31 Q67040-S4332 11N60C2 SPA11N60C2 AN-TO220-3-31-01 11N60C2 11N60C GPT09301 SDP06S60

    04n60c3

    Abstract: 04N60C3 equivalent SPA04N60C3 04N60C GPT09301 SDP06S60 AN-TO220-3-31-01
    Text: SPA04N60C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Worldwide best R DS on in TO 220 • Ultra low gate charge VDS @ Tjmax 650 V RDS(on) 0.95 Ω


    Original     		PDF SPA04N60C3 P-TO220-3-31 P-TO220-3-31 Q67040-S4413 04N60C3 04n60c3 04N60C3 equivalent SPA04N60C3 04N60C GPT09301 SDP06S60 AN-TO220-3-31-01

    SPA04N80C3

    Abstract: No abstract text available
    Text: SPA04N80C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS 800 V •=Periodic avalanche rated RDS on 1.3 Ω • Extreme dv/dt rated


    Original     		PDF SPA04N80C3 P-TO220-3-31 04N80C3 P-TO220-3-31 Q67040-S4434 SPA04N80C3

    diode 71A

    Abstract: SPA06N80C3
    Text: SPA06N80C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS 800 V •=Periodic avalanche rated RDS on 0.9 Ω • Extreme dv/dt rated


    Original     		PDF SPA06N80C3 P-TO220-3-31 06N80C3 P-TO220-3-31 Q67040-S4435 diode 71A SPA06N80C3

    Untitled

    Abstract: No abstract text available
    Text: SPA04N60C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax 650 V •=Periodic avalanche rated RDS on 0.95 Ω • Extreme dv/dt rated


    Original     		PDF SPA04N60C3 P-TO220-3-31 04N60C3 P-TO220-3-31 Q67040-S4413

    SPA07N60C3

    Abstract: No abstract text available
    Text: SPA07N60C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax 650 V •=Periodic avalanche rated RDS on 0.6 Ω • Extreme dv/dt rated


    Original     		PDF SPA07N60C3 P-TO220-3-31 07N60C3 P-TO220-3-31 Q67040-S4409 SPA07N60C3

    SPA11N80C3

    Abstract: No abstract text available
    Text: SPA11N80C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS 800 V •=Periodic avalanche rated RDS on 0.45 Ω • Extreme dv/dt rated


    Original     		PDF SPA11N80C3 P-TO220-3-31 11N80C3 P-TO220-3-31 Q67040-S4439 SPA11N80C3

    04n60c3

    Abstract: No abstract text available
    Text: Preliminary data SPP04N60C3, SPB04N60C3 SPA04N60C3 Cool MOS =Power Transistor Feature •=New revolutionary high voltage technology Product Summary VDS @ Tjmax - V • Ultra low gate charge RDS on 0.95 Ω ID 4.5 A •=Periodic avalanche rated • Extreme dv/dt rated


    Original     		PDF SPP04N60C3, SPB04N60C3 SPA04N60C3 P-TO220-3-31 P-TO263-3-2 P-TO220-3-1 SPP04N60C3 Q67040-S4366 04n60c3

    Untitled

    Abstract: No abstract text available
    Text: Preliminary data SPP11N60C3, SPB11N60C3 SPI11N60C3, SPA11N60C3 Cool MOS =Power Transistor Feature •=New revolutionary high voltage technology Product Summary VDS @ Tjmax 650 V • Ultra low gate charge R DS on 0.38 Ω •=Periodic avalanche rated ID


    Original     		PDF SPP11N60C3, SPB11N60C3 SPI11N60C3, SPA11N60C3 P-TO220-3-31 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 SPP11N60C3

    20N60C3

    Abstract: 20N60C3 equivalent SPA20N60C3 s4410 AN-TO220-3-31-01 GPT09301 SDP06S60 transistor 20N60c3
    Text: SPA20N60C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Worldwide best R DS on in TO 220 • Ultra low gate charge VDS @ Tjmax 650 V RDS(on) 0.19 Ω


    Original     		PDF SPA20N60C3 P-TO220-3-31 P-TO220-3-31 Q67040-S4410 20N60C3 20N60C3 20N60C3 equivalent SPA20N60C3 s4410 AN-TO220-3-31-01 GPT09301 SDP06S60 transistor 20N60c3

    Q67040-S4408

    Abstract: 11N60C AR1010
    Text: SPA11N60C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax 650 V •=Periodic avalanche rated RDS on 0.38 Ω • Extreme dv/dt rated


    Original     		PDF SPA11N60C3 P-TO220-3-31 11N60C3 P-TO220-3-31 Q67040-S4408 Q67040-S4408 11N60C AR1010

    07N60C3

    Abstract: 07N60 07n60c SPA07N60C3 SPB07N60C3 SPI07N60C3 SPP07N60C3
    Text: Preliminary data SPP07N60C3, SPB07N60C3 SPI07N60C3, SPA07N60C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary VDS @ Tjmax 650 V • Ultra low gate charge RDS on 0.6 Ω ID 7.3 A • Periodic avalanche rated


    Original     		PDF SPP07N60C3, SPB07N60C3 SPI07N60C3, SPA07N60C3 P-TO220-3-31 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 SPP07N60C3 07N60C3 07N60 07n60c SPA07N60C3 SPB07N60C3 SPI07N60C3 SPP07N60C3

    04n60c2

    Abstract: UA716 SPA04N60C2 04N60C 04n60 AN-TO220-3-31-01 GPT09301 SDP06S60
    Text: Preliminary data SPA04N60C2 Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS 600 V •=Periodic avalanche rated RDS on 0.95 Ω • Extreme dv/dt rated


    Original     		PDF SPA04N60C2 P-TO220-3-31 P-TO220-3-31 Q67040-S4330 04N60C2 04n60c2 UA716 SPA04N60C2 04N60C 04n60 AN-TO220-3-31-01 GPT09301 SDP06S60

    Untitled

    Abstract: No abstract text available
    Text: Preliminary data SPP07N60C3, SPB07N60C3 SPI07N60C3, SPA07N60C3 Cool MOS =Power Transistor Feature •=New revolutionary high voltage technology Product Summary VDS @ Tjmax 650 V • Ultra low gate charge R DS on 0.6 Ω •=Periodic avalanche rated ID


    Original     		PDF SPP07N60C3, SPB07N60C3 SPI07N60C3, SPA07N60C3 P-TO220-3-31 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 SPP07N60C3

    04n60c3

    Abstract: 04N60C 04N60 04N60C3 equivalent SPB04N60C3 SPA04N60C3 SPP04N60C3
    Text: Preliminary data SPP04N60C3, SPB04N60C3 SPA04N60C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary VDS @ Tjmax 650 V • Ultra low gate charge RDS on 0.95 Ω ID 4.5 A • Periodic avalanche rated • Extreme dv/dt rated


    Original     		PDF SPP04N60C3, SPB04N60C3 SPA04N60C3 P-TO220-3-31 P-TO263-3-2 P-TO220-3-1 SPP04N60C3 Q67040-S4366 04n60c3 04N60C 04N60 04N60C3 equivalent SPB04N60C3 SPA04N60C3 SPP04N60C3

    20n60c3

    Abstract: SPA20N60C3 transistor 20N60c3 Q67040-S4410
    Text: SPA20N60C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Worldwide best R DS on in TO 220 • Ultra low gate charge VDS @ Tjmax 650 V RDS(on) 0.19 Ω


    Original     		PDF SPA20N60C3 P-TO220-3-31 20N60C3 P-TO220-3-31 Q67040-S4410 20n60c3 SPA20N60C3 transistor 20N60c3 Q67040-S4410

    spa17n80c3

    Abstract: 17n80c3
    Text: SPA17N80C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Worldwide best R DS on in TO 220 • Ultra low gate charge VDS 800 V RDS(on) 0.29 Ω •=Periodic avalanche rated


    Original     		PDF SPA17N80C3 P-TO220-3-31 17N80C3 P-TO220-3-31 Q67040-S4441 spa17n80c3 17n80c3

    08N80C3

    Abstract: SPA08N80C3
    Text: SPA08N80C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS 800 V •=Periodic avalanche rated RDS on 0.65 Ω • Extreme dv/dt rated


    Original     		PDF SPA08N80C3 P-TO220-3-31 08N80C3 P-TO220-3-31 Q67040-S4437 08N80C3 SPA08N80C3

    SPA11N60C3

    Abstract: SPA11N60C3 application note Q67040-S4408 11N60C3 AN-TO220-3-31-01 GPT09301 SDP06S60
    Text: SPA11N60C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Worldwide best R DS on in TO 220 • Ultra low gate charge VDS @ Tjmax 650 V RDS(on) 0.38 Ω


    Original     		PDF SPA11N60C3 P-TO220-3-31 P-TO220-3-31 Q67040-S4408 11N60C3 SPA11N60C3 SPA11N60C3 application note Q67040-S4408 11N60C3 AN-TO220-3-31-01 GPT09301 SDP06S60

    SPA07N60C3

    Abstract: Q67040-S4409 07n60c3 AN-TO220-3-31-01 GPT09301 SDP06S60
    Text: SPA07N60C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Worldwide best R DS on in TO 220 • Ultra low gate charge VDS @ Tjmax 650 V RDS(on) 0.6 Ω •=Periodic avalanche rated


    Original     		PDF SPA07N60C3 P-TO220-3-31 P-TO220-3-31 Q67040-S4409 07N60C3 SPA07N60C3 Q67040-S4409 07n60c3 AN-TO220-3-31-01 GPT09301 SDP06S60

    07N60C2

    Abstract: SPA07N60C2 2-S10 AN-TO220-3-31-01 GPT09301 SDP06S60 Q67040-S4331
    Text: Preliminary data SPA07N60C2 Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS 600 V •=Periodic avalanche rated RDS on 0.6 Ω • Extreme dv/dt rated


    Original     		PDF SPA07N60C2 P-TO220-3-31 P-TO220-3-31 Q67040-S4331 07N60C2 07N60C2 SPA07N60C2 2-S10 AN-TO220-3-31-01 GPT09301 SDP06S60 Q67040-S4331

    20n60c3

    Abstract: No abstract text available
    Text: Preliminary data SPP20N60C3, SPB20N60C3 SPA20N60C3 Cool MOS =Power Transistor Feature •=New revolutionary high voltage technology Product Summary VDS @ Tjmax 650 V • Worldwide best R DS on in TO 220 • Ultra low gate charge R DS(on) 0.19 Ω ID 20.7


    Original     		PDF SPP20N60C3, SPB20N60C3 SPA20N60C3 P-TO220-3-31 P-TO263-3-2 P-TO220-3-1 SPP20N60C3 Q67040-S4398 20n60c3