LR14385
Abstract: RT78625 siemens relay 24vdc RTE24024F RT16016 RPMT00A0 8A DPDT RELAY 220 latching RELAY DPDT 12V 12v 16A diagram RY16041
Text: RT series Miniature Printed Circuit Board Relays, Sockets and Accessories RT series DC Coil 16 Amp PC Board Miniature Relay Meets VDE 10mm Spacing, 5KV Dielectric File E22575 File LR15734 NR 6106 Features Coil Data @ 25°C • SPST through DPDT contact arrangements.
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E22575
LR15734
400mW.
48VDC.
500VDC
RT16016
RY16041
LR14385
RT78625
siemens relay 24vdc
RTE24024F
RT16016
RPMT00A0
8A DPDT RELAY 220
latching RELAY DPDT 12V
12v 16A diagram
RY16041
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RN60C
Abstract: LT1124 LT1124C LT1125 LT1125C OP-27 OP-270 OP-470 190C
Text: LT1124/LT1125 Dual/Quad Low Noise, High Speed Precision Op Amps DESCRIPTIO U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ The LT 1124 dual and LT1125 quad are high performance op amps that offer higher gain, slew rate and bandwidth than the industry standard OP-27 and competing OP-270/
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LT1124/LT1125
LT1125
OP-27
OP-270/
OP-470
LT1124/LT1125
OP-27;
OP-270/OP-470.
112dB
116dB
RN60C
LT1124
LT1124C
LT1125C
OP-270
190C
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LT1124
Abstract: LT1124C LT1125 LT1125C OP-27 OP-270 OP-470 strain gauge amplifier 102 RN60C L3540
Text: LT1124/LT1125 Dual/Quad Low Noise, High Speed Precision Op Amps FEATURES DESCRIPTION n The LT 1124 dual and LT1125 quad are high performance op amps that offer higher gain, slew rate and bandwidth than the industry standard OP-27 and competing OP-270/ OP-470 op amps. In addition, the LT1124/LT1125 have
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LT1124/LT1125
LT1125
OP-27
OP-270/
OP-470
LT1124/LT1125
OP-27;
OP-270/OP-470.
112dB
116dB
LT1124
LT1124C
LT1125C
OP-270
strain gauge amplifier 102
RN60C
L3540
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Untitled
Abstract: No abstract text available
Text: LT1124/LT1125 Dual/Quad Low Noise, High Speed Precision Op Amps Description Features 100% Tested Low Voltage Noise: 2.7nV/√Hz Typ 4.2nV/√Hz Max n Slew Rate: 4.5V/µs Typ n Gain-Bandwidth Product: 12.5MHz Typ n Offset Voltage, Prime Grade: 70µV Max Low Grade: 100µV Max
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LT1124/LT1125
112dB
116dB
LT1125
OP-27
OP-470
LT1124/LT1125
OP-27;
250pA
LT1113
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Untitled
Abstract: No abstract text available
Text: LT1124/LT1125 Dual/Quad Low Noise, High Speed Precision Op Amps DESCRIPTION FEATURES n n n n n n n n n 100% Tested Low Voltage Noise: 2.7nV/√Hz Typ 4.2nV/√Hz Max Slew Rate: 4.5V/ s Typ Gain-Bandwidth Product: 12.5MHz Typ Offset Voltage, Prime Grade: 70μV Max
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LT1124/LT1125
112dB
116dB
LT1125
OP-27
OP-270/
OP-470
LT1124/LT1125
OP-271112/LT1114
250pA
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OP270
Abstract: LT1124 LT1124C LT1125 LT1125C OP-27 OP-270 OP-470 RN60C 1fa MARKING
Text: LT1124/LT1125 Dual/Quad Low Noise, High Speed Precision Op Amps DESCRIPTION FEATURES n n n n n n n n n 100% Tested Low Voltage Noise: 2.7nV/√Hz Typ 4.2nV/√Hz Max Slew Rate: 4.5V/ s Typ Gain-Bandwidth Product: 12.5MHz Typ Offset Voltage, Prime Grade: 70μV Max
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LT1124/LT1125
112dB
116dB
LT1125
OP-27
OP-270/
OP-470
LT1124/LT1125
OP-27;
85nV/Hz
OP270
LT1124
LT1124C
LT1125C
OP-270
RN60C
1fa MARKING
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RN60C
Abstract: No abstract text available
Text: LT1124/LT1125 Dual/Quad Low Noise, High Speed Precision Op Amps DESCRIPTION FEATURES 100% Tested Low Voltage Noise: 2.7nV/√Hz Typ 4.2nV/√Hz Max n Slew Rate: 4.5V/µs Typ n Gain-Bandwidth Product: 12.5MHz Typ n Offset Voltage, Prime Grade: 70µV Max Low Grade: 100µV Max
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112dB
116dB
LT1124/LT1125
LT1125
OP-27
OP270/
OP-470
OP-27;
OP-270/OP-470.
RN60C
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transistor c 933
Abstract: transistor j5 Transistor 933 13MM transistor c 144 572 transistor 933 TRANSISTOR 30 w RF POWER TRANSISTOR NPN
Text: an AMP comDanv Wireless Power Transistor, 33W 1805 - 1880 MHz PHl819-33 v2.01 I- Features l l l l l NPN Silicon Microwave Power Transistor Common Emitter Class AI3 Operation Internal Input and Output Impedance Matching Diffksed Emitter Ballasting Gold Metallization System
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PHl819-33
Tl50M50A
AlC100A
transistor c 933
transistor j5
Transistor 933
13MM
transistor c 144
572 transistor
933 TRANSISTOR
30 w RF POWER TRANSISTOR NPN
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transistor j5
Abstract: ER105 diode j54 PH1920-45 transistor npn a 1930 wacom transistor 930 1/transistor j5
Text: SE z-z * =g = -= -A = = -r an AMP company Wireless Bipolar Power Transistor, 45W 1930 - 1990 MHz PHI 920-45 Features NPN Silicon Power Transistor Common Emitter Class AI3 Operation Internal Input and Output Impedance Diffused Emitter Ballasting Gold Metalization System
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b 595 transistor schematic
Abstract: PH0810-15 IC 8088 Icq-100 Pacific Wireless 1N4245 f100 0725 5 POUT15W
Text: Wireless Power Transistor 15 Watts, 850-960 MHz PH0810-15 PH0810-15 Wireless Power Transistor 15 Watts, 850 - 960 MHz 1 Features • • • • • Outline Drawing Designed for Linear Amplifier Applications Class AB: -30 dBc Typ 3rd IMD at 15 Watts PEP Common Emitter Configuration
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PH0810-15
1N4245)
b 595 transistor schematic
PH0810-15
IC 8088
Icq-100
Pacific Wireless
1N4245
f100 0725 5
POUT15W
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PH1516-100
Abstract: No abstract text available
Text: an AMP comDanv Wireless Bipolar 1450 - 1550 MHz Power Transistor, 1 OOW PH1516-100 Features - _~. - - Designed for Linear Amplifier Applications Class AB: -32 dBc Typ 3rd IMD at 100 Watts PEP Common Emitter Configuration Internal Input Impedance Matching
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PH1516-100
5000pF
lN5417
PH1516-100
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85031B
Abstract: No abstract text available
Text: E5061B-3L5 LF-RF Network Analyzer with Option 005 Impedance Analysis Function Data Sheet E5061B-3L5 with Option 005; NA plus ZA in one box To ensure the performance and reliability of electronic equipment, it is crucial to evaluate impedance characteristics of various electronic
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E5061B-3L5
E5061B-005
E5061B3L5
5990-7033EN
85031B
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Untitled
Abstract: No abstract text available
Text: BFP720F Low Noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.1, 2012-10-25 RF & Protection Devices Edition 2012-10-25 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer
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BFP720F
BFP720F:
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Untitled
Abstract: No abstract text available
Text: BFP720 Low Noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.1, 2012-10-19 RF & Protection Devices Edition 2012-10-19 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer
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BFP720
OT343
OT343-PO
OT343-FP
BFP720:
OT323-TP
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CS5170
Abstract: MUR1620CTA NTP3055 SBRS81100T3G MC1741CP 2N5458 SUBSTITUTE SPEED CONTROL of DC MOTOR tda1085c DIODE SWCH 100V SS SOT23 TR znr SF 471 NCP1200AP60
Text: SGD501/D REV 17, April 10, 2004 NORTH AMERICA SALES AND DISTRIBUTION ON Semiconductor PRICE BOOK THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION − Please see General Information Section EFFECTIVE DATE: APRIL 10, 2004 General Information Elimination Of Ozone Depleting Chemicals . . . .
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SGD501/D
74VCX16373DT
74VCX16373DTR
74VCX16374DT
16BIT
74VCX16374DTR
80SQ045N
80SQ045NRL
CS5170
MUR1620CTA
NTP3055
SBRS81100T3G
MC1741CP
2N5458 SUBSTITUTE
SPEED CONTROL of DC MOTOR tda1085c
DIODE SWCH 100V SS SOT23 TR
znr SF 471
NCP1200AP60
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Untitled
Abstract: No abstract text available
Text: jtà i W a n A M P <c o m p a n y Wireless Power Module, 10W 1.5-1.6 GHz PHA1516-10 V4.00 Features • Designed for Cellular Base Station Applications • Input and Output M atched to 5 0 0 • Class AB: -33 dBc Typ 3rd IMD at 10 Watts PEP jr . • Thermally Tracking Bias Diode Included
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PHA1516-10
PHA1516-2
PHA1516-10
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sm1206
Abstract: ECU-V1H330JCM HLMP-3000 ERJ diode SD-005-APP-PCB BLM31B601S ECJ-3VB1E104K ECJ-3YB1C105K diode vert
Text: A_ B_ C D BOTTOM-MOUNTED COMPONENTS: QTY. REF.DES. Semiconductor Inte rfac e P roducts B o tto m S ilk S creen B o tto m A sse m b ly :• ■ T sl-T■ ■r !II i g 3 4 MFR. DESCRIPTION _2_ C1.C2 ECS-T1VC475R Pana. 4.7uF/35V SM Tant.
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ECS-T1VC475R
ECJ-3VB1E104K
ECJ-3YB1C105K
V1H330JCM
MA111TR-ND
BLM31B601S
8ENF1301
ERJ-8ENF75R0
8ENF1240
8ENF8250
sm1206
ECU-V1H330JCM
HLMP-3000
ERJ diode
SD-005-APP-PCB
BLM31B601S
ECJ-3VB1E104K
ECJ-3YB1C105K
diode vert
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transistor 33w
Abstract: 33w NPN
Text: m an A M P com pany Wireless Bipolar Power Transistor, 33W 1930-1990 MHz Features PH1920-33 .744 18,90 -.560(14.22)- - • • • • • NPN Silicon M icrow ave P o w er T ran sisto r C o m m o n Km itter C lass AB O peratio n Intern al Inpu t and O utput Im p ed an ce M atching
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PH1920-33
1N4245
transistor 33w
33w NPN
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Untitled
Abstract: No abstract text available
Text: jtà i W a n A M P <c o m p a n y Wireless Power Module, 10W 1.78-1.90 GHz PHA1819-10 V4.00 Features • • Designed for Cellular Base Station Input and Output M atched to 5QQ Applications • Class AB: -30 dBc Typ 3rd IMD at 10WattsPEP p v * .1.2a / ’T "
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10WattsPEP
PHA1819-10
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PH0810-15
Abstract: No abstract text available
Text: m an A M P com pany Wireless Bipolar Power Transistor, 15W 850 - 960 MHz PH0810-15 V2.00 .975 <2 4 .77 " Features • • • • • .725 <18.42)"" D esigned for l.i n e a r A m plifier A pplications Class AB: -30dBc Typ 3rd 1MD at 15 W atts PHP C o m m o n K m itter C onfiguration
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-30dBc
PH0810-15
PH0810-15
10T/NO.
1N4245)
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JN U10
Abstract: No abstract text available
Text: jtà i W a n A M P <c o m p a n y Wireless Power Module, 2W 1.5-1.6 GHz P H A 1 5 1 6 -2 V4.00 Features • • • • • 3SC 13Ï • -?:ia _ D esigned for Cellular Base Station Applications Input and Output Matched to 500 Class AB: -33 dBc Typ 3rd IMD at 2 Watts PEP
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Untitled
Abstract: No abstract text available
Text: jtà i W a n A M P <c o m p a n y Wireless Power Module, 30W 1 .6 -1 .7 GHz PHA1617-30 V4.00 Features • • • • • 13 10 GJ.OE; D esigned for Cellular Base Station Applications Input and Output Matched to 50ß Class AB: -30 dBc Typ 3rd IMD at 30 Watts PEP
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PHA1617-30
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T35 diode
Abstract: power diode T35-4 diode T35 -4-D6 T35-4 diode
Text: Afifacm w an A M P com pany Wireless Bipolar Power Transistor, 35W 850 - 960 MHz PH0810-35 V2.00 Features • • • • • • .975 2 4 .7 7 .725 _ (18,42) D esigned for L inear A m plifier A pplications Class AB: -30dBc Typ 3rd IMD at 15 W atts PEP
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-30dBc
PH0810-35
1N4245
10T/ND.
PH0810-35
T35 diode
power diode T35-4
diode T35 -4-D6
T35-4 diode
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Untitled
Abstract: No abstract text available
Text: 8 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 7 RELEASED FOR PUBLICATION BY TYCO ELECTRONIC5 CORPORATION. LOC GP ALL RIGHTS RESERVED. REVISIONS D IST 00 LTR D ESCRIPTION EC 0S11 - 0 1 5 1 - 0 4 LED P O S IT IO N A 2 LED P O S IT IO N 3\ 1 2. OF ASSEMBLY 7.87
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050CT04
27/im
31MAR2000
04AUG98
4AUG98
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