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    GOLD METAL DETECTOR SCHEMATIC Search Results

    GOLD METAL DETECTOR SCHEMATIC Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPHR7404PU Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    GOLD METAL DETECTOR SCHEMATIC Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    DDB2265-230

    Abstract: DDB2265-250 DDB2503-220 DDB2503-230 DDB2503-250 DDB2504-220 DDB2504-230 DDB2504-250 pin diode model spice x band diode detector waveguide
    Text: data sheet Silicon Schottky Barrier Diodes: Packaged, Bondable Chips and Beam-Leads Applications l D  etectors Features l l l l l B  oth P-type and N-type low barrier silicon available L ow 1/f noise B  onded junctions for reliability P lanar passivated beam-lead and chip construction


    Original     		PDF

    cdb7619

    Abstract: No abstract text available
    Text: DATA SHEET Silicon Schottky Barrier Diodes: Packaged, Bondable Chips and Beam Leads Applications • Detectors  Mixers Features  Available in both P-type and N-type low barrier designs  Low 1/f noise  Large bond pad chip design  Planar passivated beam-lead and chip construction


    Original     		PDF J-STD-020) SQ04-0073. 200847F cdb7619

    diode RL 207

    Abstract: gold metal detectors gold detector circuit free x band diode detector waveguide CDB7620-207 ka-band mixer DDB2503-250 DDB2504-000 DDB2504-230 DDB2265-000
    Text: DATA SHEET Silicon Schottky Barrier Diodes: Packaged, Bondable Chips and Beam Leads Applications x Detectors Features x Available in both P-type and N-type low barrier silicon x Low 1/f noise x Bonded junctions for reliability x Planar passivated beam-lead and chip construction


    Original     		PDF J-STD-020) 200847B diode RL 207 gold metal detectors gold detector circuit free x band diode detector waveguide CDB7620-207 ka-band mixer DDB2503-250 DDB2504-000 DDB2504-230 DDB2265-000

    Untitled

    Abstract: No abstract text available
    Text: RP8300 SERIES Audio / Visual Electrical Housewares Medical White Goods Floor Care Appliances RoHS SPECIFICATIONS FEATURES & BENEFITS Electrical Rating: 125mA, 125VAC 100mA, 50VDC Life Expectancy: 500,000 Cycles Contact Resistance: 50mΩ Max. Insulation Resistance: 1,000MΩ Min. at 500VDC


    Original     		PDF RP8300 125mA, 125VAC 100mA, 50VDC 500VDC 500VAC 350gf 150gf

    gold detector circuit free

    Abstract: gold metal detectors metal detector schematic gold detectors circuit CDB7619-000 gold detector circuit drawing free circuits metal detector Surface Mount RF Schottky Barrier Diodes metal detector CDC7630-000
    Text: Applications • Mixer and detector Features • Low capacitance for usage beyond 40 GHz • ZBD and low barrier designs • P-type and N-type junctions • Large bond pad chip design • Chip products are Skyworks Green Silicon Schottky Diodes Skyworks broad product portfolio includes Schottky diodes as packaged and bondable


    Original     		PDF CDB7619-000, CDB7620-000, CDB7630000, CDB7631-000, CDB7621-000 CDB7623-000 BRO376-09A gold detector circuit free gold metal detectors metal detector schematic gold detectors circuit CDB7619-000 gold detector circuit drawing free circuits metal detector Surface Mount RF Schottky Barrier Diodes metal detector CDC7630-000

    J15D

    Abstract: J15D16-M204-S01M-60 W1 466C DE1M J15D14 J15D14-M204-S500U-60 J15-D 5-3CN-S01M gold metal detectors PA-101
    Text: Mercury Cadmium Telluride Detectors ISO 9001 Certified Distributor: Laser Components GmbH, Germany, Phone: 0049 0 8142 28640, www.lasercomponents.com J15 Mercury Cadmium Telluride Detectors (2 to 26 µm) General Detector Bias and Operating Circuit D* and Responsivity vs. Bias


    Original     		PDF allo142 J15D J15D16-M204-S01M-60 W1 466C DE1M J15D14 J15D14-M204-S500U-60 J15-D 5-3CN-S01M gold metal detectors PA-101

    Untitled

    Abstract: No abstract text available
    Text: ISOCOM LTD IECQ-CECC QC 88000-C004 COMPONENT ISSUE 2 SPECIFICATION November 2011 Component Specification For Ceramic Hermetically Sealed High Gain Photon Optocouplers Up-to-date lists and bibliographical references of IEQC-CECC publications may be downloaded from www.iecq.org


    Original     		PDF 88000-C004 88000-C004:

    Untitled

    Abstract: No abstract text available
    Text: Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK HMC7447 v00.0913 POWER DETECTOR - CHIP E-BAND DETECTOR 71 - 86 GHz Typical Applications


    Original     		PDF HMC7447 HMC7447

    E-band mmic

    Abstract: No abstract text available
    Text: HMC7447 v00.0913 POWER DETECTOR - CHIP E-BAND DETECTOR 71 - 86 GHz Typical Applications Features The HMC7447 monitors Tx Output Power for: Frequency: 71 - 86 GHz • E-Band Communications Systems Input Power Range: -0.5 to +23.5 dBm • Test Equipment & Sensors


    Original     		PDF HMC7447 HMC7447 E-band mmic

    metal detector circuit with pcb

    Abstract: RF5198 LQG15HN12NJ02D gold metal detector schematic
    Text: RF5198 3V W-CDMA LINEAR POWER AMPLIFIER MODULE RoHS Compliant & Pb-Free Product Typical Applications • 3V W-CDMA Handsets • Spread-Spectrum Systems • Multi-Mode W-CDMA 3G Handsets Product Description The RF5198 is a high-power, high-efficiency linear amplifier module specifically designed for 3V handheld systems. The device is manufactured on an advanced third


    Original     		PDF RF5198 RF5198 1920MHz 1980MHz 16-pin, 203mm 330mm 025mm metal detector circuit with pcb LQG15HN12NJ02D gold metal detector schematic

    Untitled

    Abstract: No abstract text available
    Text: RF5198 3V W-CDMA LINEAR POWER AMPLIFIER MODULE Typical Applications • 3V W-CDMA Handsets • Spread-Spectrum Systems • Multi-Mode W-CDMA 3G Handsets Product Description The RF5198 is a high-power, high-efficiency linear amplifier module specifically designed for 3V handheld systems. The device is manufactured on an advanced third


    Original     		PDF RF5198 RF5198 1920MHz 1980MHz 16-pin, 203mm 330mm 025mm

    metal detector circuit with pcb

    Abstract: GRM1555C1H1R0BZ01 GRM1555C1H1R0BZ01E LQG15HN12NJ02D IPC-SM-782 RF5198 digital 5.1 amplifier diagram schematic GRM1555C1H1R5BZ01E METAL DETECTOR circuit for make qfn-16 352
    Text: RF5198 RoHS Compliant & Pb-Free Product 3V 1950MHZ W-CDMA LINEAR POWER AMPLIFIER MODULE Typical Applications • 3V W-CDMA Band 1 Handsets • 3V TD-SCDMA Handsets • Multi-Mode W-CDMA 3G Handsets • Spread-Spectrum Systems Product Description The RF5198 is a high-power, high-efficiency linear amplifier module specifically designed for 3V handheld systems. The device is manufactured on an advanced third


    Original     		PDF RF5198 1950MHZ RF5198 1920MHz 1980MHz 203mm 330mm 025mm metal detector circuit with pcb GRM1555C1H1R0BZ01 GRM1555C1H1R0BZ01E LQG15HN12NJ02D IPC-SM-782 digital 5.1 amplifier diagram schematic GRM1555C1H1R5BZ01E METAL DETECTOR circuit for make qfn-16 352

    Pyroelectric Detectors

    Abstract: schematic insb W1 466C PA-101 capacitor RC 65 8142 T gold metal detectors J15-IN J15TE2 HgCdTe TE cooled GE detector
    Text: Mercury Cadmium Telluride Detectors ISO 9001 Certified Germany and other countries: LASER COMPONENTS GmbH, Phone: +49 8142 2864 0, Fax: +49 8142 2864 11, [email protected] Great Britain: LASER COMPONENTS UK Ltd., Phone: +44 1245 491 499, Fax: +44 1245 491 801, [email protected]


    Original     		PDF

    DS0603

    Abstract: No abstract text available
    Text: RF5198 RF51983 V 1950 MHz WCDMA Linear Power Amplifier Module 3V 1950MHZ W-CDMA LINEAR POWER AMPLIFIER MODULE „ Input/Output Internally Matched@50Ω IM NC 16 15 14 13 RF IN 1 27.5dBm Linear Output Power „ 42% Peak Linear Efficiency „ -41dBc ACLR @ ±5MHz


    Original     		PDF RF51983 RF5198 1950MHZ 16-Pin, -41dBc 203mm 330mm 025mm DS060310 DS0603

    Untitled

    Abstract: No abstract text available
    Text: HMC949 v00.0910 GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER WITH POWER DETECTOR, 12 - 16 GHz AMPLIFIERS - LINEAR & POWER - CHIP 3 Typical Applications Features The HMC949 is ideal for: Saturated Output Power: +35.5 dBm @ 26% PAE • Point-to-Point Radios High Output IP3: +42 dBm


    Original     		PDF HMC949 HMC949

    Untitled

    Abstract: No abstract text available
    Text: RP8400 SERIES Audio / Visual Electrical Housewares Medical White Goods Floor Care Appliances RoHS SPECIFICATIONS FEATURES & BENEFITS Electrical Rating: 125mA, 125VAC 100mA, 50VDC Life Expectancy: 500,000 Cycles Contact Resistance: 50mΩ Max. Insulation Resistance: 1,000MΩ Min. at 500VDC


    Original     		PDF RP8400 125mA, 125VAC 100mA, 50VDC 500VDC 500VAC 350gf 150gf

    Untitled

    Abstract: No abstract text available
    Text: RF5198 RF51983 V 1950 MHz WCDMA Linear Power Amplifier Module 3V 1950MHZ W-CDMA LINEAR POWER AMPLIFIER MODULE IM NC 16 15 14 13 RF IN 1 27.5dBm Linear Output Power 42% Peak Linear Efficiency „ -41dBc ACLR @ ±5MHz „ Integrated Power Detector „ HSDPA Capable


    Original     		PDF RF51983 RF5198 1950MHZ 16-Pin, -41dBc 2002/95/EC DS080807

    Untitled

    Abstract: No abstract text available
    Text: HMC952 v01.0912 Amplifiers - lineAr & power - Chip GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER WITH POWER DETECTOR, 9 - 14 GHz Typical Applications Features The hmC952 is ideal for: saturated output power: +35 dBm @ 28% pAe • Point-to-Point Radios high output ip3: +42 dBm


    Original     		PDF HMC952 HMC952

    Untitled

    Abstract: No abstract text available
    Text: RF5722 3.0V TO 3.6V, 2.4GHz TO 2.5GHz LINEAR POWER AMPLIFIER Features        VC1 RF IN 1 Single Power Supply 3.0V to 3.6V 24dB Minimum Gain Input Matched to 50 2400MHz to 2500MHz Frequency Range +18dBm at <2.5% typ EVM, 120mA at 3.3VCC


    Original     		PDF RF5722 2400MHz 2500MHz 18dBm 120mA IEEE802 11b/g/n DS110619

    HMC952

    Abstract: No abstract text available
    Text: HMC952 v01.0912 Amplifiers - Linear & Power - Chip GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER WITH POWER DETECTOR, 9 - 14 GHz Typical Applications Features The HMC952 is ideal for: Saturated Output Power: +35 dBm @ 28% PAE • Point-to-Point Radios High Output IP3: +42 dBm


    Original     		PDF HMC952 HMC952

    RF 4*4 mm QFN power amplifier ISM 900 MHz

    Abstract: transistor 2.4GHz amplifier schematic wifi SCHEMATIC DIAGRAM OF WIFI RF POWER TRANSISTOR metal detector circuit with pcb
    Text: RF5722 3.0V TO 3.6V, 2.4GHz TO 2.5GHz LINEAR POWER AMPLIFIER Features        VC1 RF IN 1 Single Power Supply 3.0V to 3.6V 24dB Minimum Gain Input Matched to 50 2400MHz to 2500MHz Frequency Range +18dBm at <2.5% typ EVM, 120mA at 3.3VCC


    Original     		PDF RF5722 IEEE802 11b/g/n RF5722 DS110619 RF 4*4 mm QFN power amplifier ISM 900 MHz transistor 2.4GHz amplifier schematic wifi SCHEMATIC DIAGRAM OF WIFI RF POWER TRANSISTOR metal detector circuit with pcb

    Untitled

    Abstract: No abstract text available
    Text: HMC952 v00.0312 Amplifiers - Linear & Power - Chip GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER WITH POWER DETECTOR, 9 - 14 GHz Typical Applications Features The HMC952 is ideal for: Saturated Output Power: +35 dBm @ 28% PAE • Point-to-Point Radios High Output IP3: +42 dBm


    Original     		PDF HMC952 HMC952 102mm

    MMIC POWER AMPLIFIER hemt

    Abstract: wedge Digital microwave radio
    Text: HMC949 v01.1010 GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER WITH POWER DETECTOR, 12 - 16 GHz Amplifiers - Linear & Power - Chip 3 Typical Applications Features The HMC949 is ideal for: Saturated Output Power: +35.5 dBm @ 26% PAE • Point-to-Point Radios High Output IP3: +42 dBm


    Original     		PDF HMC949 HMC949 MMIC POWER AMPLIFIER hemt wedge Digital microwave radio

    Untitled

    Abstract: No abstract text available
    Text: HMC1053 v01.0813 Amplifiers - Linear & Power - Chip GaAs pHEMT MMIC 5 WATT POWER AMPLIFIER With Power Detector, 9 - 14 GHz Typical Applications Features The HMC1053 is ideal for: +38 dBm Pout @ 26% PAE • Point-to-Point Radios High Output IP3: +43 dBm • Point-to-Multi-Point Radios


    Original     		PDF HMC1053 HMC1053